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International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures : November 7-9, 1995, Aizu-Wakamatsu, Japan : proceedings
| International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures : November 7-9, 1995, Aizu-Wakamatsu, Japan : proceedings |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE Computer Society Press, 1996 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Computer modeling - Congresses
Semiconductors - Congresses Computer simulation - Congresses Engineering & Applied Sciences Computer Science |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996210381003316 |
| [Place of publication not identified], : IEEE Computer Society Press, 1996 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures : November 7-9, 1995, Aizu-Wakamatsu, Japan : proceedings
| International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures : November 7-9, 1995, Aizu-Wakamatsu, Japan : proceedings |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE Computer Society Press, 1996 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Computer simulation
Semiconductors - Congresses Computer simulation - Congresses Engineering & Applied Sciences Computer Science |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872460003321 |
| [Place of publication not identified], : IEEE Computer Society Press, 1996 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physics and modeling of tera-and nano-devices [[electronic resource] /] / editors, Maxim Ryzhii, Victor Ryzhii
| Physics and modeling of tera-and nano-devices [[electronic resource] /] / editors, Maxim Ryzhii, Victor Ryzhii |
| Pubbl/distr/stampa | Singapore, : World Scientific, c2008 |
| Descrizione fisica | 1 online resource (194 p.) |
| Disciplina | 620.5 |
| Altri autori (Persone) |
RyzhiiMaxim
RyzhiiVictor |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Nanoscience
Nanotechnology Nanostructured materials Terahertz technology Optoelectronics Optoelectronic devices |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-93792-4
9786611937928 981-277-905-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires D. K . Ferry, R . Akis, M. J . Gilbert, A . Cummings and S. M. Ramey; 1. Introduction; 2. Discrete Impurity Scattering Effects; 3. Ballistic Transport in Nano-Devices; 4. Nanowire Devices; 5. Conclusions; References; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors N. Kirova; 1. Introduction; 2. Junction with Isotropic Semiconductor; 3. Surface Long Range Polarons in Molecular Crystals; 4. Junction with Conducting Polymer; 5. Conclusions; References
Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices S. M. Goodnick and M. Saraniti1. Introduction; 2. Cellular Monte Carlo Method; 3. High Field Transport; 4. CMC Device Modeling; 4.1. SOI and GOI MOSFETs; 4.2. AlGaN/GaN HFETs; Acknowledgments; References; Nanoelectronic Device Simulation Based on the Wigner Function Formalism H. Kosina; 1. Introduction; 2. The Physical Model; 3. Numerical Methods; 3.1. Particle Generation; 3.2. Particle Annihilation; 3.3. Coupling to the Poisson Equation; 4. Results; 5 . Discussion; 5.1. Interpretation of the Results 5.2. The Bound-states Problem6. Conclusions; Acknowledgment; References; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org S. Ahmed, G. Klimeck, D. Kearney, M. McLennan and M. P. Anantram; 1. Introduction; 2. Nanoscale Device Simulation: Quantum Effects; 3. Community Nanoscale MOSFET Softwares; 3.1 nanoFET; 3.2 nanoMOS; 3.3 QuaMC; 4. Simulation Results and Discussion; 5. Conclusion; Acknowledgments; References Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions V. T. Renard, T. Ota, N. Kumada and H. Hirayama1. Introduction; 2. Experiment; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems S. Roy, B. Cheng and A . Asenov; 1. Introduction; 2. Statistical Device Simulation; 3. Impact of Intrinsic Parameter Fluctuations on Circuits; 3.1. Impact of RDF on 6-TSMM Cells; 4. Conclusions; Acknowledgments; References HEMT-Based Nanometer Devices Toward Tetrahertz Era E. Sano and T. Otsuji1. Introduction; 2. Present Status of Millimeter-Wave MMICs; 3. Problems in Nanometer-Scale HEMTs; 4. Plasmon Resonant Photomixer; 5. Conclusions; Acknowledgments; References; Plasma Waves in Two-Dimensional Electron Systems and Their Applications V. Ryzhii, I. Khmyrova, M. Ryzhii, A . Satou, T. Otsuji, V. Mitin and M. S. Shur; 1. Introduction; 2. Plasma Waves and Oscillations in 2DEG Channels; 3. Plasma Instabilities 4. Detection of THz Radiation and Frequency Multiplication Using Resonant Excitation of Plasma Oscillations |
| Record Nr. | UNINA-9910453609003321 |
| Singapore, : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physics and modeling of tera-and nano-devices [[electronic resource] /] / editors, Maxim Ryzhii, Victor Ryzhii
| Physics and modeling of tera-and nano-devices [[electronic resource] /] / editors, Maxim Ryzhii, Victor Ryzhii |
| Pubbl/distr/stampa | Singapore, : World Scientific, c2008 |
| Descrizione fisica | 1 online resource (194 p.) |
| Disciplina | 620.5 |
| Altri autori (Persone) |
RyzhiiMaxim
RyzhiiVictor |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Nanoscience
Nanotechnology Nanostructured materials Terahertz technology Optoelectronics Optoelectronic devices |
| ISBN |
1-281-93792-4
9786611937928 981-277-905-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires D. K . Ferry, R . Akis, M. J . Gilbert, A . Cummings and S. M. Ramey; 1. Introduction; 2. Discrete Impurity Scattering Effects; 3. Ballistic Transport in Nano-Devices; 4. Nanowire Devices; 5. Conclusions; References; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors N. Kirova; 1. Introduction; 2. Junction with Isotropic Semiconductor; 3. Surface Long Range Polarons in Molecular Crystals; 4. Junction with Conducting Polymer; 5. Conclusions; References
Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices S. M. Goodnick and M. Saraniti1. Introduction; 2. Cellular Monte Carlo Method; 3. High Field Transport; 4. CMC Device Modeling; 4.1. SOI and GOI MOSFETs; 4.2. AlGaN/GaN HFETs; Acknowledgments; References; Nanoelectronic Device Simulation Based on the Wigner Function Formalism H. Kosina; 1. Introduction; 2. The Physical Model; 3. Numerical Methods; 3.1. Particle Generation; 3.2. Particle Annihilation; 3.3. Coupling to the Poisson Equation; 4. Results; 5 . Discussion; 5.1. Interpretation of the Results 5.2. The Bound-states Problem6. Conclusions; Acknowledgment; References; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org S. Ahmed, G. Klimeck, D. Kearney, M. McLennan and M. P. Anantram; 1. Introduction; 2. Nanoscale Device Simulation: Quantum Effects; 3. Community Nanoscale MOSFET Softwares; 3.1 nanoFET; 3.2 nanoMOS; 3.3 QuaMC; 4. Simulation Results and Discussion; 5. Conclusion; Acknowledgments; References Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions V. T. Renard, T. Ota, N. Kumada and H. Hirayama1. Introduction; 2. Experiment; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems S. Roy, B. Cheng and A . Asenov; 1. Introduction; 2. Statistical Device Simulation; 3. Impact of Intrinsic Parameter Fluctuations on Circuits; 3.1. Impact of RDF on 6-TSMM Cells; 4. Conclusions; Acknowledgments; References HEMT-Based Nanometer Devices Toward Tetrahertz Era E. Sano and T. Otsuji1. Introduction; 2. Present Status of Millimeter-Wave MMICs; 3. Problems in Nanometer-Scale HEMTs; 4. Plasmon Resonant Photomixer; 5. Conclusions; Acknowledgments; References; Plasma Waves in Two-Dimensional Electron Systems and Their Applications V. Ryzhii, I. Khmyrova, M. Ryzhii, A . Satou, T. Otsuji, V. Mitin and M. S. Shur; 1. Introduction; 2. Plasma Waves and Oscillations in 2DEG Channels; 3. Plasma Instabilities 4. Detection of THz Radiation and Frequency Multiplication Using Resonant Excitation of Plasma Oscillations |
| Record Nr. | UNINA-9910782317903321 |
| Singapore, : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||