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International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures : November 7-9, 1995, Aizu-Wakamatsu, Japan : proceedings
International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures : November 7-9, 1995, Aizu-Wakamatsu, Japan : proceedings
Pubbl/distr/stampa [Place of publication not identified], : IEEE Computer Society Press, 1996
Disciplina 621.3815/2
Soggetto topico Computer modeling - Congresses
Semiconductors - Congresses
Computer simulation - Congresses
Engineering & Applied Sciences
Computer Science
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996210381003316
[Place of publication not identified], : IEEE Computer Society Press, 1996
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures : November 7-9, 1995, Aizu-Wakamatsu, Japan : proceedings
International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures : November 7-9, 1995, Aizu-Wakamatsu, Japan : proceedings
Pubbl/distr/stampa [Place of publication not identified], : IEEE Computer Society Press, 1996
Disciplina 621.3815/2
Soggetto topico Computer simulation
Semiconductors - Congresses
Computer simulation - Congresses
Engineering & Applied Sciences
Computer Science
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910872460003321
[Place of publication not identified], : IEEE Computer Society Press, 1996
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Physics and modeling of tera-and nano-devices [[electronic resource] /] / editors, Maxim Ryzhii, Victor Ryzhii
Physics and modeling of tera-and nano-devices [[electronic resource] /] / editors, Maxim Ryzhii, Victor Ryzhii
Pubbl/distr/stampa Singapore, : World Scientific, c2008
Descrizione fisica 1 online resource (194 p.)
Disciplina 620.5
Altri autori (Persone) RyzhiiMaxim
RyzhiiVictor
Collana Selected topics in electronics and systems
Soggetto topico Nanoscience
Nanotechnology
Nanostructured materials
Terahertz technology
Optoelectronics
Optoelectronic devices
Soggetto genere / forma Electronic books.
ISBN 1-281-93792-4
9786611937928
981-277-905-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CONTENTS; Preface; Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires D. K . Ferry, R . Akis, M. J . Gilbert, A . Cummings and S. M. Ramey; 1. Introduction; 2. Discrete Impurity Scattering Effects; 3. Ballistic Transport in Nano-Devices; 4. Nanowire Devices; 5. Conclusions; References; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors N. Kirova; 1. Introduction; 2. Junction with Isotropic Semiconductor; 3. Surface Long Range Polarons in Molecular Crystals; 4. Junction with Conducting Polymer; 5. Conclusions; References
Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices S. M. Goodnick and M. Saraniti1. Introduction; 2. Cellular Monte Carlo Method; 3. High Field Transport; 4. CMC Device Modeling; 4.1. SOI and GOI MOSFETs; 4.2. AlGaN/GaN HFETs; Acknowledgments; References; Nanoelectronic Device Simulation Based on the Wigner Function Formalism H. Kosina; 1. Introduction; 2. The Physical Model; 3. Numerical Methods; 3.1. Particle Generation; 3.2. Particle Annihilation; 3.3. Coupling to the Poisson Equation; 4. Results; 5 . Discussion; 5.1. Interpretation of the Results
5.2. The Bound-states Problem6. Conclusions; Acknowledgment; References; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org S. Ahmed, G. Klimeck, D. Kearney, M. McLennan and M. P. Anantram; 1. Introduction; 2. Nanoscale Device Simulation: Quantum Effects; 3. Community Nanoscale MOSFET Softwares; 3.1 nanoFET; 3.2 nanoMOS; 3.3 QuaMC; 4. Simulation Results and Discussion; 5. Conclusion; Acknowledgments; References
Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions V. T. Renard, T. Ota, N. Kumada and H. Hirayama1. Introduction; 2. Experiment; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems S. Roy, B. Cheng and A . Asenov; 1. Introduction; 2. Statistical Device Simulation; 3. Impact of Intrinsic Parameter Fluctuations on Circuits; 3.1. Impact of RDF on 6-TSMM Cells; 4. Conclusions; Acknowledgments; References
HEMT-Based Nanometer Devices Toward Tetrahertz Era E. Sano and T. Otsuji1. Introduction; 2. Present Status of Millimeter-Wave MMICs; 3. Problems in Nanometer-Scale HEMTs; 4. Plasmon Resonant Photomixer; 5. Conclusions; Acknowledgments; References; Plasma Waves in Two-Dimensional Electron Systems and Their Applications V. Ryzhii, I. Khmyrova, M. Ryzhii, A . Satou, T. Otsuji, V. Mitin and M. S. Shur; 1. Introduction; 2. Plasma Waves and Oscillations in 2DEG Channels; 3. Plasma Instabilities
4. Detection of THz Radiation and Frequency Multiplication Using Resonant Excitation of Plasma Oscillations
Record Nr. UNINA-9910453609003321
Singapore, : World Scientific, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Physics and modeling of tera-and nano-devices [[electronic resource] /] / editors, Maxim Ryzhii, Victor Ryzhii
Physics and modeling of tera-and nano-devices [[electronic resource] /] / editors, Maxim Ryzhii, Victor Ryzhii
Pubbl/distr/stampa Singapore, : World Scientific, c2008
Descrizione fisica 1 online resource (194 p.)
Disciplina 620.5
Altri autori (Persone) RyzhiiMaxim
RyzhiiVictor
Collana Selected topics in electronics and systems
Soggetto topico Nanoscience
Nanotechnology
Nanostructured materials
Terahertz technology
Optoelectronics
Optoelectronic devices
ISBN 1-281-93792-4
9786611937928
981-277-905-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CONTENTS; Preface; Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires D. K . Ferry, R . Akis, M. J . Gilbert, A . Cummings and S. M. Ramey; 1. Introduction; 2. Discrete Impurity Scattering Effects; 3. Ballistic Transport in Nano-Devices; 4. Nanowire Devices; 5. Conclusions; References; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors N. Kirova; 1. Introduction; 2. Junction with Isotropic Semiconductor; 3. Surface Long Range Polarons in Molecular Crystals; 4. Junction with Conducting Polymer; 5. Conclusions; References
Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices S. M. Goodnick and M. Saraniti1. Introduction; 2. Cellular Monte Carlo Method; 3. High Field Transport; 4. CMC Device Modeling; 4.1. SOI and GOI MOSFETs; 4.2. AlGaN/GaN HFETs; Acknowledgments; References; Nanoelectronic Device Simulation Based on the Wigner Function Formalism H. Kosina; 1. Introduction; 2. The Physical Model; 3. Numerical Methods; 3.1. Particle Generation; 3.2. Particle Annihilation; 3.3. Coupling to the Poisson Equation; 4. Results; 5 . Discussion; 5.1. Interpretation of the Results
5.2. The Bound-states Problem6. Conclusions; Acknowledgment; References; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org S. Ahmed, G. Klimeck, D. Kearney, M. McLennan and M. P. Anantram; 1. Introduction; 2. Nanoscale Device Simulation: Quantum Effects; 3. Community Nanoscale MOSFET Softwares; 3.1 nanoFET; 3.2 nanoMOS; 3.3 QuaMC; 4. Simulation Results and Discussion; 5. Conclusion; Acknowledgments; References
Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions V. T. Renard, T. Ota, N. Kumada and H. Hirayama1. Introduction; 2. Experiment; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems S. Roy, B. Cheng and A . Asenov; 1. Introduction; 2. Statistical Device Simulation; 3. Impact of Intrinsic Parameter Fluctuations on Circuits; 3.1. Impact of RDF on 6-TSMM Cells; 4. Conclusions; Acknowledgments; References
HEMT-Based Nanometer Devices Toward Tetrahertz Era E. Sano and T. Otsuji1. Introduction; 2. Present Status of Millimeter-Wave MMICs; 3. Problems in Nanometer-Scale HEMTs; 4. Plasmon Resonant Photomixer; 5. Conclusions; Acknowledgments; References; Plasma Waves in Two-Dimensional Electron Systems and Their Applications V. Ryzhii, I. Khmyrova, M. Ryzhii, A . Satou, T. Otsuji, V. Mitin and M. S. Shur; 1. Introduction; 2. Plasma Waves and Oscillations in 2DEG Channels; 3. Plasma Instabilities
4. Detection of THz Radiation and Frequency Multiplication Using Resonant Excitation of Plasma Oscillations
Record Nr. UNINA-9910782317903321
Singapore, : World Scientific, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui