A guide to noise in microwave circuits : devices, circuits and measurement / / Peter Heymann and Matthias Rudolph |
Autore | Heymann Peter |
Pubbl/distr/stampa | Piscataway, New Jersey ; ; Hoboken, New Jersey : , : IEEE Press : , : Wiley, , [2022] |
Descrizione fisica | 1 online resource (515 pages) |
Disciplina | 621.38132 |
Soggetto topico |
Microwave circuits
Electric noise Linear integrated circuits |
ISBN |
1-119-85938-7
1-119-85939-5 1-119-85937-9 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910555156603321 |
Heymann Peter | ||
Piscataway, New Jersey ; ; Hoboken, New Jersey : , : IEEE Press : , : Wiley, , [2022] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
A guide to noise in microwave circuits : devices, circuits and measurement / / Peter Heymann and Matthias Rudolph |
Autore | Heymann Peter |
Pubbl/distr/stampa | Piscataway, New Jersey ; ; Hoboken, New Jersey : , : IEEE Press : , : Wiley, , [2022] |
Descrizione fisica | 1 online resource (515 pages) |
Disciplina | 621.38132 |
Soggetto topico |
Microwave circuits
Electric noise Linear integrated circuits |
ISBN |
1-119-85938-7
1-119-85939-5 1-119-85937-9 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910829926203321 |
Heymann Peter | ||
Piscataway, New Jersey ; ; Hoboken, New Jersey : , : IEEE Press : , : Wiley, , [2022] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Nonlinear transistor model parameter extraction techniques / / edited by Matthias Rudolph, Christian Fager, David E. Root [[electronic resource]] |
Pubbl/distr/stampa | Cambridge : , : Cambridge University Press, , 2012 |
Descrizione fisica | 1 online resource (xiv, 352 pages) : digital, PDF file(s) |
Disciplina | 621.3815/28 |
Collana | The Cambridge RF and microwave engineering series |
Soggetto topico |
Transistors - Mathematical models
Electronic circuit design |
ISBN |
1-107-22467-5
1-283-34235-9 1-139-16026-5 9786613342355 1-139-15465-6 1-139-16126-1 1-139-15569-5 1-139-15744-2 1-139-15921-6 1-139-01496-X |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Cover; Nonlinear Transistor Model Parameter Extraction Techniques; The Cambridge RF and Microwave Engineering Series; Title; Copyright; Contents; List of contributors; Preface; 1 Introduction; 1.1 Model extraction challenges; 1.1.1 Accuracy; 1.1.1.1 Circuit application; 1.1.1.2 Measurement uncertainty; 1.1.1.3 Process variations; 1.1.2 Numerical convergence; 1.1.2.1 Breakdown; 1.1.2.2 Self-heating; 1.1.3 Choice of the modeling transistor; 1.2 Model extraction workflow; References; 2 DC and thermal modeling: III--V FETs and HBTs; 2.1 Introduction; 2.2 Basic DC characteristics
2.3 FET DC parameters and modeling2.4 HBT DC parameters and modeling; 2.5 Process control monitoring; 2.6 Thermal modeling overview; 2.7 Physics-based thermal scaling model for HBTs; 2.8 Measurement-based thermal model for FETs; 2.9 Transistor reliability evaluation; Acknowledgments; References; 3 Extrinsic parameter and parasitic elements in III--V HBT and HEMT modeling; 3.1 Introduction; 3.2 Test structures with calibration and de-embedding; 3.3 Methods for extrinsic parameter extraction used in HBTs; 3.3.1 Equivalent circuit topology 3.3.2 Physical description of contact resistances and overlap capacitances3.3.3 Extrinsic resistance and inductance extraction; 3.4 Methods for extrinsic parameter extraction used in HEMTs; 3.4.1 Cold FET technique; 3.4.2 Unbiased technique; 3.4.3 GaN HEMTs exceptions; 3.5 Scaling for multicell arrays; References; 4 Uncertainties in small-signal equivalent circuit modeling; 4.1 Introduction; 4.1.1 Sources of uncertainty in modeling; 4.1.2 Measurement uncertainty; 4.2 Uncertainties in direct extraction methods; 4.2.1 Simple direct extraction example; 4.2.1.1 Example circuit and measurements 4.2.1.2 Uncertainty analysis4.2.1.3 Parameter estimation; 4.2.1.4 Parameter correlations; 4.2.2 Results using transistor measurements; 4.2.2.1 Uncertainty contributions; 4.2.2.2 Intrinsic model parameter sensitivities; 4.2.2.3 Intrinsic model parameter uncertainties; 4.2.2.4 Multibias extraction results; 4.3 Optimizer-based estimation techniques; 4.3.1 Maximum likelihood estimation; 4.3.1.1 Simple example; 4.3.1.2 MLE uncertainty; 4.3.2 MLE of small-signal transistor model parameters; 4.3.2.1 Parasitic parameter estimation; 4.3.2.2 Application to parasitic FET model extraction 4.3.2.3 MLE of intrinsic model parameters4.3.2.4 Application to intrinsic FET model extraction; 4.3.3 Comparison between MLE and the direct extraction method; 4.3.4 Application of MLE in RF-CMOS de-embedding; 4.3.4.1 Method description; 4.3.4.2 Example using 130 nm RF-CMOS measurements; 4.3.4.3 Comparison between different de-embedding methods; 4.3.5 Discussion; 4.4 Complexity versus uncertainty in equivalent circuit modeling; 4.4.1 Finding an optimum model topology; 4.4.2 An illustrative example; 4.4.2.1 MSE estimation procedure; 4.4.2.2 Results; 4.5 Summary and discussion; References 5 The large-signal model: theoretical foundations, practical considerations, and recent trends |
Record Nr. | UNINA-9910457508703321 |
Cambridge : , : Cambridge University Press, , 2012 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Nonlinear transistor model parameter extraction techniques / / edited by Matthias Rudolph, Christian Fager, David E. Root [[electronic resource]] |
Pubbl/distr/stampa | Cambridge : , : Cambridge University Press, , 2012 |
Descrizione fisica | 1 online resource (xiv, 352 pages) : digital, PDF file(s) |
Disciplina | 621.3815/28 |
Collana | The Cambridge RF and microwave engineering series |
Soggetto topico |
Transistors - Mathematical models
Electronic circuit design |
ISBN |
1-107-22467-5
1-283-34235-9 1-139-16026-5 9786613342355 1-139-15465-6 1-139-16126-1 1-139-15569-5 1-139-15744-2 1-139-15921-6 1-139-01496-X |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Cover; Nonlinear Transistor Model Parameter Extraction Techniques; The Cambridge RF and Microwave Engineering Series; Title; Copyright; Contents; List of contributors; Preface; 1 Introduction; 1.1 Model extraction challenges; 1.1.1 Accuracy; 1.1.1.1 Circuit application; 1.1.1.2 Measurement uncertainty; 1.1.1.3 Process variations; 1.1.2 Numerical convergence; 1.1.2.1 Breakdown; 1.1.2.2 Self-heating; 1.1.3 Choice of the modeling transistor; 1.2 Model extraction workflow; References; 2 DC and thermal modeling: III--V FETs and HBTs; 2.1 Introduction; 2.2 Basic DC characteristics
2.3 FET DC parameters and modeling2.4 HBT DC parameters and modeling; 2.5 Process control monitoring; 2.6 Thermal modeling overview; 2.7 Physics-based thermal scaling model for HBTs; 2.8 Measurement-based thermal model for FETs; 2.9 Transistor reliability evaluation; Acknowledgments; References; 3 Extrinsic parameter and parasitic elements in III--V HBT and HEMT modeling; 3.1 Introduction; 3.2 Test structures with calibration and de-embedding; 3.3 Methods for extrinsic parameter extraction used in HBTs; 3.3.1 Equivalent circuit topology 3.3.2 Physical description of contact resistances and overlap capacitances3.3.3 Extrinsic resistance and inductance extraction; 3.4 Methods for extrinsic parameter extraction used in HEMTs; 3.4.1 Cold FET technique; 3.4.2 Unbiased technique; 3.4.3 GaN HEMTs exceptions; 3.5 Scaling for multicell arrays; References; 4 Uncertainties in small-signal equivalent circuit modeling; 4.1 Introduction; 4.1.1 Sources of uncertainty in modeling; 4.1.2 Measurement uncertainty; 4.2 Uncertainties in direct extraction methods; 4.2.1 Simple direct extraction example; 4.2.1.1 Example circuit and measurements 4.2.1.2 Uncertainty analysis4.2.1.3 Parameter estimation; 4.2.1.4 Parameter correlations; 4.2.2 Results using transistor measurements; 4.2.2.1 Uncertainty contributions; 4.2.2.2 Intrinsic model parameter sensitivities; 4.2.2.3 Intrinsic model parameter uncertainties; 4.2.2.4 Multibias extraction results; 4.3 Optimizer-based estimation techniques; 4.3.1 Maximum likelihood estimation; 4.3.1.1 Simple example; 4.3.1.2 MLE uncertainty; 4.3.2 MLE of small-signal transistor model parameters; 4.3.2.1 Parasitic parameter estimation; 4.3.2.2 Application to parasitic FET model extraction 4.3.2.3 MLE of intrinsic model parameters4.3.2.4 Application to intrinsic FET model extraction; 4.3.3 Comparison between MLE and the direct extraction method; 4.3.4 Application of MLE in RF-CMOS de-embedding; 4.3.4.1 Method description; 4.3.4.2 Example using 130 nm RF-CMOS measurements; 4.3.4.3 Comparison between different de-embedding methods; 4.3.5 Discussion; 4.4 Complexity versus uncertainty in equivalent circuit modeling; 4.4.1 Finding an optimum model topology; 4.4.2 An illustrative example; 4.4.2.1 MSE estimation procedure; 4.4.2.2 Results; 4.5 Summary and discussion; References 5 The large-signal model: theoretical foundations, practical considerations, and recent trends |
Record Nr. | UNINA-9910781864603321 |
Cambridge : , : Cambridge University Press, , 2012 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Nonlinear transistor model parameter extraction techniques / / edited by Matthias Rudolph, Christian Fager, David E. Root [[electronic resource]] |
Pubbl/distr/stampa | Cambridge : , : Cambridge University Press, , 2012 |
Descrizione fisica | 1 online resource (xiv, 352 pages) : digital, PDF file(s) |
Disciplina | 621.3815/28 |
Collana | The Cambridge RF and microwave engineering series |
Soggetto topico |
Transistors - Mathematical models
Electronic circuit design |
ISBN |
1-107-22467-5
1-283-34235-9 1-139-16026-5 9786613342355 1-139-15465-6 1-139-16126-1 1-139-15569-5 1-139-15744-2 1-139-15921-6 1-139-01496-X |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Cover; Nonlinear Transistor Model Parameter Extraction Techniques; The Cambridge RF and Microwave Engineering Series; Title; Copyright; Contents; List of contributors; Preface; 1 Introduction; 1.1 Model extraction challenges; 1.1.1 Accuracy; 1.1.1.1 Circuit application; 1.1.1.2 Measurement uncertainty; 1.1.1.3 Process variations; 1.1.2 Numerical convergence; 1.1.2.1 Breakdown; 1.1.2.2 Self-heating; 1.1.3 Choice of the modeling transistor; 1.2 Model extraction workflow; References; 2 DC and thermal modeling: III--V FETs and HBTs; 2.1 Introduction; 2.2 Basic DC characteristics
2.3 FET DC parameters and modeling2.4 HBT DC parameters and modeling; 2.5 Process control monitoring; 2.6 Thermal modeling overview; 2.7 Physics-based thermal scaling model for HBTs; 2.8 Measurement-based thermal model for FETs; 2.9 Transistor reliability evaluation; Acknowledgments; References; 3 Extrinsic parameter and parasitic elements in III--V HBT and HEMT modeling; 3.1 Introduction; 3.2 Test structures with calibration and de-embedding; 3.3 Methods for extrinsic parameter extraction used in HBTs; 3.3.1 Equivalent circuit topology 3.3.2 Physical description of contact resistances and overlap capacitances3.3.3 Extrinsic resistance and inductance extraction; 3.4 Methods for extrinsic parameter extraction used in HEMTs; 3.4.1 Cold FET technique; 3.4.2 Unbiased technique; 3.4.3 GaN HEMTs exceptions; 3.5 Scaling for multicell arrays; References; 4 Uncertainties in small-signal equivalent circuit modeling; 4.1 Introduction; 4.1.1 Sources of uncertainty in modeling; 4.1.2 Measurement uncertainty; 4.2 Uncertainties in direct extraction methods; 4.2.1 Simple direct extraction example; 4.2.1.1 Example circuit and measurements 4.2.1.2 Uncertainty analysis4.2.1.3 Parameter estimation; 4.2.1.4 Parameter correlations; 4.2.2 Results using transistor measurements; 4.2.2.1 Uncertainty contributions; 4.2.2.2 Intrinsic model parameter sensitivities; 4.2.2.3 Intrinsic model parameter uncertainties; 4.2.2.4 Multibias extraction results; 4.3 Optimizer-based estimation techniques; 4.3.1 Maximum likelihood estimation; 4.3.1.1 Simple example; 4.3.1.2 MLE uncertainty; 4.3.2 MLE of small-signal transistor model parameters; 4.3.2.1 Parasitic parameter estimation; 4.3.2.2 Application to parasitic FET model extraction 4.3.2.3 MLE of intrinsic model parameters4.3.2.4 Application to intrinsic FET model extraction; 4.3.3 Comparison between MLE and the direct extraction method; 4.3.4 Application of MLE in RF-CMOS de-embedding; 4.3.4.1 Method description; 4.3.4.2 Example using 130 nm RF-CMOS measurements; 4.3.4.3 Comparison between different de-embedding methods; 4.3.5 Discussion; 4.4 Complexity versus uncertainty in equivalent circuit modeling; 4.4.1 Finding an optimum model topology; 4.4.2 An illustrative example; 4.4.2.1 MSE estimation procedure; 4.4.2.2 Results; 4.5 Summary and discussion; References 5 The large-signal model: theoretical foundations, practical considerations, and recent trends |
Record Nr. | UNINA-9910827953503321 |
Cambridge : , : Cambridge University Press, , 2012 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
RF/microwave circuit design for wireless applications [[electronic resource] /] / Ulrich L. Rohde, Matthias Rudolph |
Autore | Rohde Ulrich L |
Edizione | [2nd ed.] |
Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2013 |
Descrizione fisica | 1 online resource (915 p.) |
Disciplina |
621.381/32
621.38132 |
Altri autori (Persone) | RudolphMatthias <1969-> |
Soggetto topico |
Microwave circuits - Design and construction
Microwave integrated circuits - Computer-aided design Radio frequency integrated circuits - Design and construction Semiconductors - Computer-aided design Wireless communication systems - Equipment and supplies - Design and construction |
Soggetto genere / forma | Electronic books. |
ISBN |
1-118-43148-0
1-283-85885-1 1-118-43140-5 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
RF/Microwave Circuit Design for WirelessI Applications; Contents; Foreword; Preface; 1 Introduction to Wireless Circuit Design; 1.1 Introduction; 1.2 System Functions; 1.3 The Radio Channel and Modulation Requirements; 1.3.1 Introduction; 1.3.2 Channel Impulse Response; 1.3.3 Doppler Effect; 1.3.4 Transfer Function; 1.3.5 Time Response of Channel Impulse Response and Transfer Function; 1.3.6 Lessons Learned; 1.3.7 Wireless Signal Example: The TDMA System in GSM; 1.3.7.1 Frequency Division Multiple Access (FDMA); 1.3.7.2 Time-Division Multiple Access (TDMA)
1.3.7.3 Code-Division Multiple Access (CDMA)1.3.7.4 TDMA in GSM; 1.3.7.5 TDMA Structure; 1.3.7.6 Bit Synchronization; 1.3.7.7 Compensation of Multipath Reception; 1.3.8 From GSM to UMTS to LTE; 1.4 About Bits, Symbols, and Waveforms; 1.4.1 Introduction; 1.4.1.1 Representation of a Modulated RF Carrier; 1.4.1.2 The Spectrum of a Digitally Modulated Carrier; 1.4.2 Some Fundamentals of Digital Modulation Techniques; 1.4.2.1 Spread-Spectrum and CDMA Modulation Techniques; 1.4.2.2 Orthogonal Frequency Division Modulation (OFDM) and Single- Carrier Frequency-Division Multiple Access (SC-FDMA) 1.5 Analysis of Wireless Systems1.5.1 Analog and Digital Receiver Designs; 1.5.1.1 Receiver Design Examples; 1.5.1.2 PLL CAD Simulation; 1.5.2 Transmitters; 1.5.2.1 Linear Digital Modulation; 1.5.2.2 Digital and Analog FM; 1.5.2.3 Single Sideband AM (SSB-AM); 1.5.2.4 Designing with the SA900; 1.5.2.5 ISM Band Application; 1.6 Building Blocks; 1.7 System Specifications and Their Relationship to Circuit Design; 1.7.1 System Noise and Noise Floor; 1.7.2 System Amplitude and Phase Behavior; 1.8 Testing; 1.8.1 Introduction; 1.8.2 Transmission and Reception Quality; 1.8.3 Base Station Simulation 1.8.4 GSM1.8.5 DECT; 1.9 Converting C/N or SNR to EB/N0; References; Further Reading; 2 Models for Active Devices; 2.1 Diodes; 2.1.1 Large-Signal Diode Model; 2.1.2 Mixer and Detector Diodes; 2.1.2.1 Junction Capacitance; 2.1.2.2 Parameter Trade-Offs; 2.1.2.3 Mixer Diodes; 2.1.2.4 Linear Diode Model; 2.1.3 PIN Diodes; 2.1.3.1 Introduction; 2.1.3.2 Large-Signal PIN Diode Model; 2.1.3.3 Basic Theory: Variable Resistance; 2.1.3.4 Breakdown Voltage, Capacitance, Q Factor; 2.1.3.5 PIN Diode Applications; 2.1.3.6 Example: A PIN Diode π Network for TV Tuners; 2.1.4 Tuning Diodes 2.1.4.1 Introduction2.1.4.2 Tuning Diode Physics; 2.1.4.3 Capacitance; 2.1.4.4 Q Factor or Diode Loss; 2.1.4.5 Distortion Products; 2.1.4.6 Electrical Properties of Tuning Diodes; 2.1.4.7 Diode-Tuned Resonant Circuits; 2.2 Bipolar Transistors; 2.2.1 Transistor Structure Types; 2.2.2 Large-Signal Behavior of Bipolar Transistors; 2.2.2.1 Electrical Characteristics and Specifications; 2.2.3 Large-Signal Transistors in the Forward-Active Region; 2.2.4 Improving RF Performance by Means of Heterostructures 2.2.5 Effects of Collector Voltage on Large-Signal Characteristics in the Forward-Active Region of BJTs |
Record Nr. | UNINA-9910462946803321 |
Rohde Ulrich L | ||
Hoboken, N.J., : Wiley, 2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
RF/microwave circuit design for wireless applications [[electronic resource] /] / Ulrich L. Rohde, Matthias Rudolph |
Autore | Rohde Ulrich L |
Edizione | [2nd ed.] |
Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2013 |
Descrizione fisica | xix, 893 p. : ill |
Altri autori (Persone) | RudolphMatthias <1969-> |
Soggetto topico |
Microwave circuits - Design and construction
Microwave integrated circuits - Computer-aided design Radio frequency integrated circuits - Design and construction Semiconductors - Computer-aided design Wireless communication systems - Equipment and supplies - Design and construction |
ISBN |
1-118-43140-5
1-283-85885-1 1-118-43148-0 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910795967903321 |
Rohde Ulrich L | ||
Hoboken, N.J., : Wiley, 2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
RF/microwave circuit design for wireless applications / / Ulrich L. Rohde, Matthias Rudolph |
Autore | Rohde Ulrich L |
Edizione | [2nd ed.] |
Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2013 |
Descrizione fisica | xix, 893 p. : ill |
Altri autori (Persone) | RudolphMatthias <1969-> |
Soggetto topico |
Microwave circuits - Design and construction
Microwave integrated circuits - Computer-aided design Radio frequency integrated circuits - Design and construction Semiconductors - Computer-aided design Wireless communication systems - Equipment and supplies - Design and construction |
ISBN |
1-118-43140-5
1-283-85885-1 1-118-43148-0 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910819767503321 |
Rohde Ulrich L | ||
Hoboken, N.J., : Wiley, 2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|