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Topics in high field transport in semiconductors [[electronic resource] /] / editors, Kevin F. Brennan, P. Paul Ruden
| Topics in high field transport in semiconductors [[electronic resource] /] / editors, Kevin F. Brennan, P. Paul Ruden |
| Pubbl/distr/stampa | Singapore ; ; River Edge, NJ, : World Scientific, c2001 |
| Descrizione fisica | 1 online resource (268 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
BrennanKevin F. <1956->
RudenP. Paul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Semiconductors
Electron transport |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-95146-3
9786611951467 981-279-992-3 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; CONTENTS; Quantum Transport in Semiconductor Devices; 1. Introduction; 2. Quantum vs. Classical: Where does the Difference Arise?; 3. Non-Equilibrium Green's Functions; 4. Trajectories Dissipation and Reversibility; 5. The Initial Condition for the Green's Function; 6. The Equations of Motion; 7. Wigner Equation of Motion; 8. Summary; Quantum Transport and its Simulation with the Wigner-Function Approach; 1. Introduction; 2. Elementary Definition of the Wigner Function; 3. Main Properties of the Wigner Function; 4. The Coefficients fnm(r P) Coherent Evolution; 5. Dynamical Equation
6. Phonon Interaction 7. Wigner Paths; 8. Monte Carlo Simulation; 9. p and w Dependent Wigner Function from the G< Green Function; 10. Conclusions; Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields; 1. Introduction; 2. Formalism; 3. Local Inhomogeneities; 4. Analysis for Constant Electric Field; 5. Summary and Conclusion; Collision Broadening through Sequences of Scattering Events: Theory Consequences and Modeling within Semiclassical Monte Carlo; 1. Introduction; 2. Theory; 3. Illustrative Quantum Transport Simulations; 4. Improved CBMC Algorithm; 5. Simplified CBMC Simulations 6. Full-Band NAB-CBMC Simulations 7. Conclusion; Transport in a Polarization-Induced 2D Electron Gas; 1. Introduction; 2. Polarization-Induced Electrons; 3. The Boltzmann Equation; 4. Electron-Electron Scattering; 5. Phonon Scattering; 6. Electron-Electron Scattering Dominated Transport of 2D Gas in GaN/AIGaN Quantum Wells; 7. Summary; 8. Acknowledgements; 9. References; Impact Ionization and High Field Effects in Wide Band Gap Semiconductors; 1. Introduction; 2. Impact Ionization Rate; 3. Ensemble Monte Carlo Simulation and Impact Ionization Coefficient; 4. Discussion and Conclusions Simulation of Carrier Transport in Wide Band Gap Semiconductors 1. Introduction; 2. Transport Model for the Wide Band Gap Semiconductors; 3. Bulk Material Results; 4. Conclusions; Electrical Transport in Organic Semiconductors; 1. Introduction; 2. Time-of-Flight Mobility Measurements; 3. Mobility from Single Carrier SCL Diode I-V Characteristics; 4. Mobility Models; 5. Conclusion |
| Record Nr. | UNINA-9910454387903321 |
| Singapore ; ; River Edge, NJ, : World Scientific, c2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Topics in high field transport in semiconductors [[electronic resource] /] / editors, Kevin F. Brennan, P. Paul Ruden
| Topics in high field transport in semiconductors [[electronic resource] /] / editors, Kevin F. Brennan, P. Paul Ruden |
| Pubbl/distr/stampa | Singapore ; ; River Edge, NJ, : World Scientific, c2001 |
| Descrizione fisica | 1 online resource (268 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
BrennanKevin F. <1956->
RudenP. Paul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Semiconductors
Electron transport |
| ISBN |
1-281-95146-3
9786611951467 981-279-992-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; CONTENTS; Quantum Transport in Semiconductor Devices; 1. Introduction; 2. Quantum vs. Classical: Where does the Difference Arise?; 3. Non-Equilibrium Green's Functions; 4. Trajectories Dissipation and Reversibility; 5. The Initial Condition for the Green's Function; 6. The Equations of Motion; 7. Wigner Equation of Motion; 8. Summary; Quantum Transport and its Simulation with the Wigner-Function Approach; 1. Introduction; 2. Elementary Definition of the Wigner Function; 3. Main Properties of the Wigner Function; 4. The Coefficients fnm(r P) Coherent Evolution; 5. Dynamical Equation
6. Phonon Interaction 7. Wigner Paths; 8. Monte Carlo Simulation; 9. p and w Dependent Wigner Function from the G< Green Function; 10. Conclusions; Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields; 1. Introduction; 2. Formalism; 3. Local Inhomogeneities; 4. Analysis for Constant Electric Field; 5. Summary and Conclusion; Collision Broadening through Sequences of Scattering Events: Theory Consequences and Modeling within Semiclassical Monte Carlo; 1. Introduction; 2. Theory; 3. Illustrative Quantum Transport Simulations; 4. Improved CBMC Algorithm; 5. Simplified CBMC Simulations 6. Full-Band NAB-CBMC Simulations 7. Conclusion; Transport in a Polarization-Induced 2D Electron Gas; 1. Introduction; 2. Polarization-Induced Electrons; 3. The Boltzmann Equation; 4. Electron-Electron Scattering; 5. Phonon Scattering; 6. Electron-Electron Scattering Dominated Transport of 2D Gas in GaN/AIGaN Quantum Wells; 7. Summary; 8. Acknowledgements; 9. References; Impact Ionization and High Field Effects in Wide Band Gap Semiconductors; 1. Introduction; 2. Impact Ionization Rate; 3. Ensemble Monte Carlo Simulation and Impact Ionization Coefficient; 4. Discussion and Conclusions Simulation of Carrier Transport in Wide Band Gap Semiconductors 1. Introduction; 2. Transport Model for the Wide Band Gap Semiconductors; 3. Bulk Material Results; 4. Conclusions; Electrical Transport in Organic Semiconductors; 1. Introduction; 2. Time-of-Flight Mobility Measurements; 3. Mobility from Single Carrier SCL Diode I-V Characteristics; 4. Mobility Models; 5. Conclusion |
| Record Nr. | UNINA-9910782394503321 |
| Singapore ; ; River Edge, NJ, : World Scientific, c2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Topics in high field transport in semiconductors / / editors, Kevin F. Brennan, P. Paul Ruden
| Topics in high field transport in semiconductors / / editors, Kevin F. Brennan, P. Paul Ruden |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Singapore ; ; River Edge, NJ, : World Scientific, c2001 |
| Descrizione fisica | 1 online resource (268 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
BrennanKevin F. <1956->
RudenP. Paul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Semiconductors
Electron transport |
| ISBN |
1-281-95146-3
9786611951467 981-279-992-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; CONTENTS; Quantum Transport in Semiconductor Devices; 1. Introduction; 2. Quantum vs. Classical: Where does the Difference Arise?; 3. Non-Equilibrium Green's Functions; 4. Trajectories Dissipation and Reversibility; 5. The Initial Condition for the Green's Function; 6. The Equations of Motion; 7. Wigner Equation of Motion; 8. Summary; Quantum Transport and its Simulation with the Wigner-Function Approach; 1. Introduction; 2. Elementary Definition of the Wigner Function; 3. Main Properties of the Wigner Function; 4. The Coefficients fnm(r P) Coherent Evolution; 5. Dynamical Equation
6. Phonon Interaction 7. Wigner Paths; 8. Monte Carlo Simulation; 9. p and w Dependent Wigner Function from the G< Green Function; 10. Conclusions; Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields; 1. Introduction; 2. Formalism; 3. Local Inhomogeneities; 4. Analysis for Constant Electric Field; 5. Summary and Conclusion; Collision Broadening through Sequences of Scattering Events: Theory Consequences and Modeling within Semiclassical Monte Carlo; 1. Introduction; 2. Theory; 3. Illustrative Quantum Transport Simulations; 4. Improved CBMC Algorithm; 5. Simplified CBMC Simulations 6. Full-Band NAB-CBMC Simulations 7. Conclusion; Transport in a Polarization-Induced 2D Electron Gas; 1. Introduction; 2. Polarization-Induced Electrons; 3. The Boltzmann Equation; 4. Electron-Electron Scattering; 5. Phonon Scattering; 6. Electron-Electron Scattering Dominated Transport of 2D Gas in GaN/AIGaN Quantum Wells; 7. Summary; 8. Acknowledgements; 9. References; Impact Ionization and High Field Effects in Wide Band Gap Semiconductors; 1. Introduction; 2. Impact Ionization Rate; 3. Ensemble Monte Carlo Simulation and Impact Ionization Coefficient; 4. Discussion and Conclusions Simulation of Carrier Transport in Wide Band Gap Semiconductors 1. Introduction; 2. Transport Model for the Wide Band Gap Semiconductors; 3. Bulk Material Results; 4. Conclusions; Electrical Transport in Organic Semiconductors; 1. Introduction; 2. Time-of-Flight Mobility Measurements; 3. Mobility from Single Carrier SCL Diode I-V Characteristics; 4. Mobility Models; 5. Conclusion |
| Record Nr. | UNINA-9910826997003321 |
| Singapore ; ; River Edge, NJ, : World Scientific, c2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||