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Defects of Solid Semiconductor Structures
| Defects of Solid Semiconductor Structures |
| Autore | Riccio Michele |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Zurich : , : Trans Tech Publications, Limited, , 2024 |
| Descrizione fisica | 1 online resource (179 pages) |
| Altri autori (Persone) |
IraceAndrea
BreglioGiovanni |
| Collana | Defect and Diffusion Forum |
| Soggetto topico |
Defects
Silicon carbide |
| ISBN |
9783036416359
3036416358 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Defects of Solid Semiconductor Structures -- Preface -- Table of Contents -- Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface -- Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter -- Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer -- Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion -- Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging -- Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates -- Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment -- The Role of Defects on SiC Device Performance and Ways to Mitigate them -- Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures -- SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control -- Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography -- Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates -- Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures -- Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations -- Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy -- Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs -- Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers.
Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy -- A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC -- Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects -- Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals -- Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography -- High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production -- Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering -- Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing® -- Charge Carrier Capture by Prominent Defect Centers in 4H-SiC -- Keyword Index -- Author Index. |
| Record Nr. | UNINA-9911006725003321 |
Riccio Michele
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| Zurich : , : Trans Tech Publications, Limited, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Formation of Solid-State Structures
| Formation of Solid-State Structures |
| Autore | Riccio Michele |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Zurich : , : Trans Tech Publications, Limited, , 2024 |
| Descrizione fisica | 1 online resource (221 pages) |
| Altri autori (Persone) |
IraceAndrea
BreglioGiovanni |
| Collana | Solid State Phenomena |
| Soggetto topico |
Semiconductors
Solid state physics |
| ISBN |
9783036416328
3036416323 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Formation of Solid-State Structures -- Preface -- Table of Contents -- Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation -- TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer -- Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems -- Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing -- Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping -- Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide -- Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC -- Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC -- Prediction of Contact Resistance of 4H-SiC by Machine Learning Using Optical Microscope Images after Laser Doping -- The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC -- Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing -- Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC -- Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization -- Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC -- Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing -- Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers -- Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget -- Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization -- Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC.
Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs -- Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs -- Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions -- Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET -- Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power Devices -- Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface -- Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications -- High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2 -- Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry -- Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal -- Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask -- A Comparison between Different Post Grinding Processes on 4H-SiC Wafers -- Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC -- High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C) -- Keyword Index -- Author Index. |
| Record Nr. | UNINA-9911006724103321 |
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Riccio Michele
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| Zurich : , : Trans Tech Publications, Limited, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Growing and Forming of Semiconductor Layers
| Growing and Forming of Semiconductor Layers |
| Autore | Riccio Michele |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Zurich : , : Trans Tech Publications, Limited, , 2024 |
| Descrizione fisica | 1 online resource (107 pages) |
| Altri autori (Persone) |
IraceAndrea
BreglioGiovanni |
| Collana | Solid State Phenomena |
| Soggetto topico |
Silicon carbide
Gallium nitride |
| ISBN |
9783036416311
3036416315 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Intro -- Growing and Forming of Semiconductor Layers -- Preface -- Table of Contents -- Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD -- Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films -- Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method -- Resistivity as a Witness of Local Crystal Growth Conditions -- GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT -- SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure -- Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates -- 4H-SiC Crystal Growth Using Recycled SiC Powder Source -- High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage -- The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth -- Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules -- Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC -- Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry -- Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications -- Characterization of Growth Sectors in Gallium Nitride Substrate Wafers -- Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries -- Keyword Index -- Author Index. |
| Record Nr. | UNINA-9911006708903321 |
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Riccio Michele
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| Zurich : , : Trans Tech Publications, Limited, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Materials Application in Quantum, Sensors and Mechatronics Systems
| Materials Application in Quantum, Sensors and Mechatronics Systems |
| Autore | Riccio Michele |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Zurich : , : Trans Tech Publications, Limited, , 2024 |
| Descrizione fisica | 1 online resource (80 pages) |
| Altri autori (Persone) |
IraceAndrea
BreglioGiovanni |
| Soggetto topico |
Silicon carbide
Quantum electronics |
| ISBN |
9783036416366
3036416366 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Intro -- Materials Application in Quantum, Sensors and Mechatronics Systems -- Preface -- Table of Contents -- Spin-Orbit Coupling of Color Centers for Quantum Applications -- Optical Ionization of Qubits and their Silent Charge States -- Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°C -- Monitoring of Graphene Properties in the Process of Viral Biosensor Manufacturing -- Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on < -- 111> -- and < -- 100> -- Silicon -- 250 μm Thick Detectors for Neutron Detection: Design, Electrical Characteristics, and Detector Performances -- Stress Fields Distribution and Simulation in 3C-SiC Resonators -- Design of Monolithically Integrated Temperature Sensors in 4H-SiC JFETs -- Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications -- Plasmonic Ag Nanoparticles on SiC for Use as SERS Substrate and in Integrated Optical Sensors for Bio-Chemical Applications -- Experimental Observation of Raman Assisted and Kerr Optical Frequency Comb in a 4H-Silicon-Carbide on Insulator Microresonator -- Keyword Index -- Author Index. |
| Record Nr. | UNINA-9911006717103321 |
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Riccio Michele
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||
| Zurich : , : Trans Tech Publications, Limited, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Processing and Characteristics of Solid-State Structures
| Processing and Characteristics of Solid-State Structures |
| Autore | Riccio Michele |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Zurich : , : Trans Tech Publications, Limited, , 2024 |
| Descrizione fisica | 1 online resource (143 pages) |
| Altri autori (Persone) |
IraceAndrea
BreglioGiovanni |
| Collana | Solid State Phenomena |
| Soggetto topico |
Metal oxide semiconductors
Silicon carbide |
| ISBN |
9783036416465
3036416463 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Processing and Characteristics of Solid-State Structures -- Preface -- Table of Contents -- Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors -- Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board -- Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices -- Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters -- Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation -- Modeling the Charging of Gate Oxide under High Electric Field -- Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy -- Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C -- Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces -- A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate -- Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs -- Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs -- Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs -- Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs -- Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs -- Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC -- Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers.
Fail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling -- Gate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation Methods -- Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD -- Keyword Index -- Author Index. |
| Record Nr. | UNINA-9911006734003321 |
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Riccio Michele
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| Zurich : , : Trans Tech Publications, Limited, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Solid-State Power Devices
| Solid-State Power Devices |
| Autore | Riccio Michele |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Zurich : , : Trans Tech Publications, Limited, , 2024 |
| Descrizione fisica | 1 online resource (203 pages) |
| Disciplina | 621.31242 |
| Altri autori (Persone) |
IraceAndrea
BreglioGiovanni |
| Collana | Solid State Phenomena |
| Soggetto topico |
Silicon carbide
Power electronics |
| ISBN |
9783036416335
3036416331 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Solid-State Power Devices: Circuitry and Characterizations -- Preface -- Table of Contents -- 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class -- Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs -- Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics -- Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics -- Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts -- Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices -- 1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On -- Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography -- Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET -- A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism -- SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations -- High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module -- Normally-Off 1200V Silicon Carbide JFET Diode with Low VF -- On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs -- Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations -- Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device.
Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique -- Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor -- Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures -- Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination -- Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain -- Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs -- Comparison of Si CMOS and SiC CMOS Operational Amplifiers -- Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC -- Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs -- The First Optimisation of a 16 kV 4H-SiC N-Type IGCT -- Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET -- Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs -- Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation -- Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes -- Keyword Index -- Author Index. |
| Record Nr. | UNINA-9911006710703321 |
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Riccio Michele
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||
| Zurich : , : Trans Tech Publications, Limited, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Solid-State Power Devices
| Solid-State Power Devices |
| Autore | Riccio Michele |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Zurich : , : Trans Tech Publications, Limited, , 2024 |
| Descrizione fisica | 1 online resource (126 pages) |
| Disciplina | 621.317 |
| Altri autori (Persone) |
IraceAndrea
BreglioGiovanni |
| Collana | Solid State Phenomena |
| Soggetto topico |
Silicon carbide
Power electronics |
| ISBN |
9783036416472
3036416471 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Intro -- Solid-State Power Devices: Operational Reliability and Parameters' Stability -- Preface -- Table of Contents -- Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation -- Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses -- Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests -- Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature -- Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults -- Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes -- A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB -- Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure -- Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors -- Dynamic Bias-Temperature Instability Testing in SiC MOSFETs -- UIS Ruggedness of Parallel 4H-SiC MOSFETs -- The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions -- Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact -- AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs -- Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements -- High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode -- Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET -- Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications -- Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs -- Keyword Index -- Author Index. |
| Record Nr. | UNINA-9911006733703321 |
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Riccio Michele
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||
| Zurich : , : Trans Tech Publications, Limited, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||