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Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid
| Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid |
| Autore | Luo Fang Lin |
| Pubbl/distr/stampa | London, : Elsevier Academic, 2005 |
| Descrizione fisica | 1 online resource (421 p.) |
| Disciplina | 621.317 |
| Altri autori (Persone) |
YeHong <1973->
RashidM. H |
| Soggetto topico |
Power electronics
Digital electronics Digital control systems |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-63787-0
9786610637874 0-08-045902-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Digital Power Electronics and Applications; Contents; Preface; Autobiography; 1. Introduction; 1.1 Historical review; 1.1.1 WORK, ENERGY AND HEAT; 1.1.2 DC AND AC EQUIPMENT; DC Power Supply; AC Power Supply; 1.1.3 LOADS; Linear Passive Loads; Linear Dynamic Loads; 1.1.4 IMPEDANCE; 1.1.5 POWERS; Apparent Power S; Power P; Reactive Power Q; 1.2 Traditional parameters; 1.2.1 POWER FACTOR (PF); 1.2.2 POWER-TRANSFER EFFICIENCY (η); 1.2.3 TOTAL HARMONIC DISTORTION (THD); 1.2.4 RIPPLE FACTOR (RF); 1.2.5 APPLICATION EXAMPLES; Power and Efficiency (η); An R-L Circuit Calculation
A Three-Phase Circuit Calculation1.3 Multiple-quadrant operations and choppers; 1.3.1 THE FIRST-QUADRANT CHOPPER; 1.3.2 THE SECOND-QUADRANT CHOPPER; 1.3.3 THE THIRD-QUADRANT CHOPPER; 1.3.4 THE FOURTH-QUADRANT CHOPPER; 1.3.5 THE FIRST-SECOND-QUADRANT CHOPPER; 1.3.6 THE THIRD-FOURTH-QUADRANT CHOPPER; 1.3.7 THE FOUR-QUADRANT CHOPPER; 1.4 Digital power electronics: pump circuits and conversion technology; 1.4.1 FUNDAMENTAL PUMP CIRCUITS; 1.4.2 AC/DC RECTIFIERS; 1.4.3 DC/AC PWM INVERTERS; 1.4.4 DC/DC CONVERTERS; 1.4.5 AC/AC CONVERTERS 1.5 Shortage of analog power electronics and conversion technology1.6 Power semiconductor devices applied in digital power electronics; FURTHER READING; 2. Energy Factor (EF) and Sub-sequential Parameters; 2.1 Introduction; 2.2 Pumping energy (PE); 2.2.1 ENERGY QUANTIZATION; 2.2.2 ENERGY QUANTIZATION FUNCTION; 2.3 Stored energy (SE); 2.3.1 STORED ENERGY IN CONTINUOUS CONDUCTION MODE; Stored Energy (SE); Capacitor-Inductor Stored Energy Ratio (CIR); Energy Losses (EL); Stored Energy Variation on Inductors and Capacitors (VE); 2.3.2 STORED ENERGY IN DISCONTINUOUS CONDUCTION MODE (DCM) 2.4 Energy factor (EF)2.5 Variation energy factor (EF[sub(V)]); 2.6 Time constant, τ, and damping time constant, τ[sub(d)]; 2.6.1 TIME CONSTANT, τ; 2.6.2 DAMPING TIME CONSTANT, τ[sub(d)]; 2.6.3 TIME CONSTANT RATIO, ξ; 2.6.4 MATHEMATICAL MODELING FOR POWER DC/DC CONVERTERS; 2.7 Examples of applications; 2.7.1 A BUCK CONVERTER IN CCM; Buck Converter without Energy Losses (r[sub(L)] = 0Ω); Buck Converter with Small Energy Losses (r[sub(L)] = 1.5Ω); Buck Converter with Energy Losses (r[sub(L)] = 4.5Ω); Buck Converter with Large Energy Losses (r[sub(L)] = 6Ω) 2.7.2 A SUPER-LIFT LUO-CONVERTER IN CCM2.7.3 A BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.4 A BUCK-BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.5 POSITIVE-OUTPUT LUO-CONVERTER IN CCM (NO POWER LOSSES); 2.8 Small signal analysis; 2.8.1 A BUCK CONVERTER IN CCM WITHOUT ENERGY LOSSES (r[sub(L)] = 0); 2.8.2 BUCK-CONVERTER WITH SMALL ENERGY LOSSES (r[sub(L)] = 1.5Ω); 2.8.3 SUPER-LIFT LUO-CONVERTER WITH ENERGY LOSSES (r[sub(L)] = 0.12Ω); FURTHER READING; APPENDIX A - A SECOND-ORDER TRANSFER FUNCTION; A.1 Very Small Damping Time Constant; A.2 Small Damping Time Constant A.3 Critical Damping Time Constant |
| Record Nr. | UNINA-9910458714403321 |
Luo Fang Lin
|
||
| London, : Elsevier Academic, 2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid
| Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid |
| Autore | Luo Fang Lin |
| Pubbl/distr/stampa | London, : Elsevier Academic, 2005 |
| Descrizione fisica | 1 online resource (421 p.) |
| Disciplina | 621.317 |
| Altri autori (Persone) |
YeHong <1973->
RashidM. H |
| Soggetto topico |
Power electronics
Digital electronics Digital control systems |
| ISBN |
1-280-63787-0
9786610637874 0-08-045902-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Digital Power Electronics and Applications; Contents; Preface; Autobiography; 1. Introduction; 1.1 Historical review; 1.1.1 WORK, ENERGY AND HEAT; 1.1.2 DC AND AC EQUIPMENT; DC Power Supply; AC Power Supply; 1.1.3 LOADS; Linear Passive Loads; Linear Dynamic Loads; 1.1.4 IMPEDANCE; 1.1.5 POWERS; Apparent Power S; Power P; Reactive Power Q; 1.2 Traditional parameters; 1.2.1 POWER FACTOR (PF); 1.2.2 POWER-TRANSFER EFFICIENCY (η); 1.2.3 TOTAL HARMONIC DISTORTION (THD); 1.2.4 RIPPLE FACTOR (RF); 1.2.5 APPLICATION EXAMPLES; Power and Efficiency (η); An R-L Circuit Calculation
A Three-Phase Circuit Calculation1.3 Multiple-quadrant operations and choppers; 1.3.1 THE FIRST-QUADRANT CHOPPER; 1.3.2 THE SECOND-QUADRANT CHOPPER; 1.3.3 THE THIRD-QUADRANT CHOPPER; 1.3.4 THE FOURTH-QUADRANT CHOPPER; 1.3.5 THE FIRST-SECOND-QUADRANT CHOPPER; 1.3.6 THE THIRD-FOURTH-QUADRANT CHOPPER; 1.3.7 THE FOUR-QUADRANT CHOPPER; 1.4 Digital power electronics: pump circuits and conversion technology; 1.4.1 FUNDAMENTAL PUMP CIRCUITS; 1.4.2 AC/DC RECTIFIERS; 1.4.3 DC/AC PWM INVERTERS; 1.4.4 DC/DC CONVERTERS; 1.4.5 AC/AC CONVERTERS 1.5 Shortage of analog power electronics and conversion technology1.6 Power semiconductor devices applied in digital power electronics; FURTHER READING; 2. Energy Factor (EF) and Sub-sequential Parameters; 2.1 Introduction; 2.2 Pumping energy (PE); 2.2.1 ENERGY QUANTIZATION; 2.2.2 ENERGY QUANTIZATION FUNCTION; 2.3 Stored energy (SE); 2.3.1 STORED ENERGY IN CONTINUOUS CONDUCTION MODE; Stored Energy (SE); Capacitor-Inductor Stored Energy Ratio (CIR); Energy Losses (EL); Stored Energy Variation on Inductors and Capacitors (VE); 2.3.2 STORED ENERGY IN DISCONTINUOUS CONDUCTION MODE (DCM) 2.4 Energy factor (EF)2.5 Variation energy factor (EF[sub(V)]); 2.6 Time constant, τ, and damping time constant, τ[sub(d)]; 2.6.1 TIME CONSTANT, τ; 2.6.2 DAMPING TIME CONSTANT, τ[sub(d)]; 2.6.3 TIME CONSTANT RATIO, ξ; 2.6.4 MATHEMATICAL MODELING FOR POWER DC/DC CONVERTERS; 2.7 Examples of applications; 2.7.1 A BUCK CONVERTER IN CCM; Buck Converter without Energy Losses (r[sub(L)] = 0Ω); Buck Converter with Small Energy Losses (r[sub(L)] = 1.5Ω); Buck Converter with Energy Losses (r[sub(L)] = 4.5Ω); Buck Converter with Large Energy Losses (r[sub(L)] = 6Ω) 2.7.2 A SUPER-LIFT LUO-CONVERTER IN CCM2.7.3 A BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.4 A BUCK-BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.5 POSITIVE-OUTPUT LUO-CONVERTER IN CCM (NO POWER LOSSES); 2.8 Small signal analysis; 2.8.1 A BUCK CONVERTER IN CCM WITHOUT ENERGY LOSSES (r[sub(L)] = 0); 2.8.2 BUCK-CONVERTER WITH SMALL ENERGY LOSSES (r[sub(L)] = 1.5Ω); 2.8.3 SUPER-LIFT LUO-CONVERTER WITH ENERGY LOSSES (r[sub(L)] = 0.12Ω); FURTHER READING; APPENDIX A - A SECOND-ORDER TRANSFER FUNCTION; A.1 Very Small Damping Time Constant; A.2 Small Damping Time Constant A.3 Critical Damping Time Constant |
| Record Nr. | UNINA-9910784544303321 |
|
Luo Fang Lin
|
||
| London, : Elsevier Academic, 2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Digital power electronics and applications / / Fang Lin Luo, Hong Ye, Muhammed Rashid
| Digital power electronics and applications / / Fang Lin Luo, Hong Ye, Muhammed Rashid |
| Autore | Luo Fang Lin |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | London, : Elsevier Academic, 2005 |
| Descrizione fisica | 1 online resource (421 p.) |
| Disciplina | 621.317 |
| Altri autori (Persone) |
YeHong <1973->
RashidM. H |
| Soggetto topico |
Power electronics
Digital electronics Digital control systems |
| ISBN |
1-280-63787-0
9786610637874 0-08-045902-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Digital Power Electronics and Applications; Contents; Preface; Autobiography; 1. Introduction; 1.1 Historical review; 1.1.1 WORK, ENERGY AND HEAT; 1.1.2 DC AND AC EQUIPMENT; DC Power Supply; AC Power Supply; 1.1.3 LOADS; Linear Passive Loads; Linear Dynamic Loads; 1.1.4 IMPEDANCE; 1.1.5 POWERS; Apparent Power S; Power P; Reactive Power Q; 1.2 Traditional parameters; 1.2.1 POWER FACTOR (PF); 1.2.2 POWER-TRANSFER EFFICIENCY (η); 1.2.3 TOTAL HARMONIC DISTORTION (THD); 1.2.4 RIPPLE FACTOR (RF); 1.2.5 APPLICATION EXAMPLES; Power and Efficiency (η); An R-L Circuit Calculation
A Three-Phase Circuit Calculation1.3 Multiple-quadrant operations and choppers; 1.3.1 THE FIRST-QUADRANT CHOPPER; 1.3.2 THE SECOND-QUADRANT CHOPPER; 1.3.3 THE THIRD-QUADRANT CHOPPER; 1.3.4 THE FOURTH-QUADRANT CHOPPER; 1.3.5 THE FIRST-SECOND-QUADRANT CHOPPER; 1.3.6 THE THIRD-FOURTH-QUADRANT CHOPPER; 1.3.7 THE FOUR-QUADRANT CHOPPER; 1.4 Digital power electronics: pump circuits and conversion technology; 1.4.1 FUNDAMENTAL PUMP CIRCUITS; 1.4.2 AC/DC RECTIFIERS; 1.4.3 DC/AC PWM INVERTERS; 1.4.4 DC/DC CONVERTERS; 1.4.5 AC/AC CONVERTERS 1.5 Shortage of analog power electronics and conversion technology1.6 Power semiconductor devices applied in digital power electronics; FURTHER READING; 2. Energy Factor (EF) and Sub-sequential Parameters; 2.1 Introduction; 2.2 Pumping energy (PE); 2.2.1 ENERGY QUANTIZATION; 2.2.2 ENERGY QUANTIZATION FUNCTION; 2.3 Stored energy (SE); 2.3.1 STORED ENERGY IN CONTINUOUS CONDUCTION MODE; Stored Energy (SE); Capacitor-Inductor Stored Energy Ratio (CIR); Energy Losses (EL); Stored Energy Variation on Inductors and Capacitors (VE); 2.3.2 STORED ENERGY IN DISCONTINUOUS CONDUCTION MODE (DCM) 2.4 Energy factor (EF)2.5 Variation energy factor (EF[sub(V)]); 2.6 Time constant, τ, and damping time constant, τ[sub(d)]; 2.6.1 TIME CONSTANT, τ; 2.6.2 DAMPING TIME CONSTANT, τ[sub(d)]; 2.6.3 TIME CONSTANT RATIO, ξ; 2.6.4 MATHEMATICAL MODELING FOR POWER DC/DC CONVERTERS; 2.7 Examples of applications; 2.7.1 A BUCK CONVERTER IN CCM; Buck Converter without Energy Losses (r[sub(L)] = 0Ω); Buck Converter with Small Energy Losses (r[sub(L)] = 1.5Ω); Buck Converter with Energy Losses (r[sub(L)] = 4.5Ω); Buck Converter with Large Energy Losses (r[sub(L)] = 6Ω) 2.7.2 A SUPER-LIFT LUO-CONVERTER IN CCM2.7.3 A BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.4 A BUCK-BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.5 POSITIVE-OUTPUT LUO-CONVERTER IN CCM (NO POWER LOSSES); 2.8 Small signal analysis; 2.8.1 A BUCK CONVERTER IN CCM WITHOUT ENERGY LOSSES (r[sub(L)] = 0); 2.8.2 BUCK-CONVERTER WITH SMALL ENERGY LOSSES (r[sub(L)] = 1.5Ω); 2.8.3 SUPER-LIFT LUO-CONVERTER WITH ENERGY LOSSES (r[sub(L)] = 0.12Ω); FURTHER READING; APPENDIX A - A SECOND-ORDER TRANSFER FUNCTION; A.1 Very Small Damping Time Constant; A.2 Small Damping Time Constant A.3 Critical Damping Time Constant |
| Record Nr. | UNINA-9910816265603321 |
|
Luo Fang Lin
|
||
| London, : Elsevier Academic, 2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
| Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid |
| Edizione | [3rd ed.] |
| Pubbl/distr/stampa | Amsterdam ; ; Boston, : Elsevier/BH, c2011 |
| Descrizione fisica | 1 online resource (1409 p.) |
| Disciplina | 621.31/7 |
| Altri autori (Persone) | RashidM. H |
| Soggetto topico |
Power electronics
Electronics |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-95503-9
9786612955037 0-12-382037-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Power Electronics Handbook; Copyright; Dedication; Table of Contents; Preface for Third Edition; Chapter 1. Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.5. Tools for Analysis and Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronics Devices; Chapter 2. The Power Diode; 2.1. Diode as a Switch; 2.2. Properties of PN Junction; 2.3. Common Diode Types; 2.4. Typical Diode Ratings; 2.5. Snubber Circuits for Diode; 2.6. Series and Parallel Connection of Power Diodes
2.7. Typical Applications of Diodes 2.8. Standard Datasheet for Diode Selection; References; Chapter 3. Power Bipolar Transistors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.4. Dynamic Switching Characteristics; 3.5. Transistor Base Drive Applications; 3.6. SPICE Simulation of Bipolar Junction Transistors; 3.7. BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1. Introduction; 4.2. Switching in Power Electronic Circuits; 4.3. General Switching Characteristics; 4.4. The Power MOSFET; 4.5. Future Trends in Power Devices; References Chapter 5. Insulated Gate Bipolar Transistor 5.1. Introduction; 5.2. Basic Structure and Operation; 5.3. Static Characteristics; 5.4. Dynamic Switching Characteristics; 5.5. IGBT Performance Parameters; 5.6. Gate Drive Requirements; 5.7. Circuit Models; 5.8. Applications; Further Reading; Chapter 6. Thyristors; 6.1. Introduction; 6.2. Basic Structure and Operation; 6.3. Static Characteristics; 6.4. Dynamic Switching Characteristics; 6.5. Thyristor Parameters; 6.6. Types of Thyristors; 6.7. Gate Drive Requirements; 6.8. PSpice Model; 6.9. Applications; Further Reading Chapter 7. Gate Turn-off Thyristors 7.1. Introduction; 7.2. Basic Structure and Operation; 7.3. GTO Thyristor Models; 7.4. Static Characteristics; 7.5. Switching Phases; 7.6. SPICE GTO Model; 7.7. Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1. Introduction; 8.2. Equivalent Circuit and Switching Characteristics; 8.3. Comparison of MCT and Other Power Devices; 8.4. Gate Drive for MCTs; 8.5. Protection of MCTs; 8.6. Simulation Model of an MCT; 8.7. Generation-1 and Generation-2 MCTs; 8.8. N-channel MCT; 8.9. Base Resistance-controlled Thyristor 8.10. MOS Turn-off Thyristor 8.11. Applications of PMCT; 8.12. Conclusions; 8.13. Appendix; References; Chapter 9. Static Induction Devices; 9.1. Introduction; 9.2. Theory of Static Induction Devices; 9.3. Characteristics of Static Induction Transistor; 9.4. Bipolar Mode Operation of SI devices (BSIT); 9.5. CMT Conductivity Modulation Transistor; 9.6. Static Induction Diode; 9.7. Lateral Punch-Through Transistor; 9.8. Static Induction Transistor Logic; 9.9. BJT Saturation Protected by SIT; 9.10. Static Induction MOS Transistor; 9.11. Space Charge Limiting Load (SCLL) 9.12. Power MOS Transistors |
| Record Nr. | UNINA-9910459072303321 |
| Amsterdam ; ; Boston, : Elsevier/BH, c2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Power electronics handbook [[e-book] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
| Power electronics handbook [[e-book] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid |
| Edizione | [3rd ed.] |
| Pubbl/distr/stampa | Amsterdam ; ; Boston, : Elsevier/BH, c2011 |
| Descrizione fisica | 1 online resource (1409 p.) |
| Disciplina | 621.31/7 |
| Altri autori (Persone) | RashidM. H |
| Soggetto topico |
Power electronics
Electronics |
| ISBN |
1-282-95503-9
9786612955037 0-12-382037-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Power Electronics Handbook; Copyright; Dedication; Table of Contents; Preface for Third Edition; Chapter 1. Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.5. Tools for Analysis and Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronics Devices; Chapter 2. The Power Diode; 2.1. Diode as a Switch; 2.2. Properties of PN Junction; 2.3. Common Diode Types; 2.4. Typical Diode Ratings; 2.5. Snubber Circuits for Diode; 2.6. Series and Parallel Connection of Power Diodes
2.7. Typical Applications of Diodes 2.8. Standard Datasheet for Diode Selection; References; Chapter 3. Power Bipolar Transistors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.4. Dynamic Switching Characteristics; 3.5. Transistor Base Drive Applications; 3.6. SPICE Simulation of Bipolar Junction Transistors; 3.7. BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1. Introduction; 4.2. Switching in Power Electronic Circuits; 4.3. General Switching Characteristics; 4.4. The Power MOSFET; 4.5. Future Trends in Power Devices; References Chapter 5. Insulated Gate Bipolar Transistor 5.1. Introduction; 5.2. Basic Structure and Operation; 5.3. Static Characteristics; 5.4. Dynamic Switching Characteristics; 5.5. IGBT Performance Parameters; 5.6. Gate Drive Requirements; 5.7. Circuit Models; 5.8. Applications; Further Reading; Chapter 6. Thyristors; 6.1. Introduction; 6.2. Basic Structure and Operation; 6.3. Static Characteristics; 6.4. Dynamic Switching Characteristics; 6.5. Thyristor Parameters; 6.6. Types of Thyristors; 6.7. Gate Drive Requirements; 6.8. PSpice Model; 6.9. Applications; Further Reading Chapter 7. Gate Turn-off Thyristors 7.1. Introduction; 7.2. Basic Structure and Operation; 7.3. GTO Thyristor Models; 7.4. Static Characteristics; 7.5. Switching Phases; 7.6. SPICE GTO Model; 7.7. Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1. Introduction; 8.2. Equivalent Circuit and Switching Characteristics; 8.3. Comparison of MCT and Other Power Devices; 8.4. Gate Drive for MCTs; 8.5. Protection of MCTs; 8.6. Simulation Model of an MCT; 8.7. Generation-1 and Generation-2 MCTs; 8.8. N-channel MCT; 8.9. Base Resistance-controlled Thyristor 8.10. MOS Turn-off Thyristor 8.11. Applications of PMCT; 8.12. Conclusions; 8.13. Appendix; References; Chapter 9. Static Induction Devices; 9.1. Introduction; 9.2. Theory of Static Induction Devices; 9.3. Characteristics of Static Induction Transistor; 9.4. Bipolar Mode Operation of SI devices (BSIT); 9.5. CMT Conductivity Modulation Transistor; 9.6. Static Induction Diode; 9.7. Lateral Punch-Through Transistor; 9.8. Static Induction Transistor Logic; 9.9. BJT Saturation Protected by SIT; 9.10. Static Induction MOS Transistor; 9.11. Space Charge Limiting Load (SCLL) 9.12. Power MOS Transistors |
| Record Nr. | UNINA-9910785466703321 |
| Amsterdam ; ; Boston, : Elsevier/BH, c2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Power electronics handbook : devices, circuits, and applications / / edited by Muhammad H. Rashid
| Power electronics handbook : devices, circuits, and applications / / edited by Muhammad H. Rashid |
| Edizione | [3rd ed.] |
| Pubbl/distr/stampa | Amsterdam ; ; Boston, : Elsevier/BH, c2011 |
| Descrizione fisica | 1 online resource (1409 p.) |
| Disciplina |
621.31/7
621.317 |
| Altri autori (Persone) | RashidM. H |
| Soggetto topico |
Power electronics
Electronics |
| ISBN |
9786612955037
9781282955035 1282955039 9780123820372 0123820375 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Power Electronics Handbook; Copyright; Dedication; Table of Contents; Preface for Third Edition; Chapter 1. Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.5. Tools for Analysis and Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronics Devices; Chapter 2. The Power Diode; 2.1. Diode as a Switch; 2.2. Properties of PN Junction; 2.3. Common Diode Types; 2.4. Typical Diode Ratings; 2.5. Snubber Circuits for Diode; 2.6. Series and Parallel Connection of Power Diodes
2.7. Typical Applications of Diodes 2.8. Standard Datasheet for Diode Selection; References; Chapter 3. Power Bipolar Transistors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.4. Dynamic Switching Characteristics; 3.5. Transistor Base Drive Applications; 3.6. SPICE Simulation of Bipolar Junction Transistors; 3.7. BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1. Introduction; 4.2. Switching in Power Electronic Circuits; 4.3. General Switching Characteristics; 4.4. The Power MOSFET; 4.5. Future Trends in Power Devices; References Chapter 5. Insulated Gate Bipolar Transistor 5.1. Introduction; 5.2. Basic Structure and Operation; 5.3. Static Characteristics; 5.4. Dynamic Switching Characteristics; 5.5. IGBT Performance Parameters; 5.6. Gate Drive Requirements; 5.7. Circuit Models; 5.8. Applications; Further Reading; Chapter 6. Thyristors; 6.1. Introduction; 6.2. Basic Structure and Operation; 6.3. Static Characteristics; 6.4. Dynamic Switching Characteristics; 6.5. Thyristor Parameters; 6.6. Types of Thyristors; 6.7. Gate Drive Requirements; 6.8. PSpice Model; 6.9. Applications; Further Reading Chapter 7. Gate Turn-off Thyristors 7.1. Introduction; 7.2. Basic Structure and Operation; 7.3. GTO Thyristor Models; 7.4. Static Characteristics; 7.5. Switching Phases; 7.6. SPICE GTO Model; 7.7. Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1. Introduction; 8.2. Equivalent Circuit and Switching Characteristics; 8.3. Comparison of MCT and Other Power Devices; 8.4. Gate Drive for MCTs; 8.5. Protection of MCTs; 8.6. Simulation Model of an MCT; 8.7. Generation-1 and Generation-2 MCTs; 8.8. N-channel MCT; 8.9. Base Resistance-controlled Thyristor 8.10. MOS Turn-off Thyristor 8.11. Applications of PMCT; 8.12. Conclusions; 8.13. Appendix; References; Chapter 9. Static Induction Devices; 9.1. Introduction; 9.2. Theory of Static Induction Devices; 9.3. Characteristics of Static Induction Transistor; 9.4. Bipolar Mode Operation of SI devices (BSIT); 9.5. CMT Conductivity Modulation Transistor; 9.6. Static Induction Diode; 9.7. Lateral Punch-Through Transistor; 9.8. Static Induction Transistor Logic; 9.9. BJT Saturation Protected by SIT; 9.10. Static Induction MOS Transistor; 9.11. Space Charge Limiting Load (SCLL) 9.12. Power MOS Transistors |
| Record Nr. | UNINA-9910816803603321 |
| Amsterdam ; ; Boston, : Elsevier/BH, c2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
| Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Amsterdam ; ; London, : Academic, 2007 |
| Descrizione fisica | 1 online resource (1189 p.) |
| Disciplina | 621.317 |
| Altri autori (Persone) | RashidM. H |
| Collana | Engineering |
| Soggetto topico |
Power electronics
Electronics |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-74684-X
9786610746842 0-08-046765-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front cover; POWER ELECTRONICS HANDBOOK; Copyright page; Dedication; Table of contents; Preface; Chapter 1. Introduction; 1.1 Power Electronics Defined; 1.2 Key Characteristics; 1.3 Trends in Power Supplies; 1.4 Conversion Examples; 1.5 Tools for Analysis and Design; 1.6 Summary; References; Chapter 2. The Power Diode; 2.1 Diode as a Switch; 2.2 Properties of PN Junction; 2.3 Common Diode Types; 2.4 Typical Diode Ratings; 2.5 Snubber Circuits for Diode; 2.6 Series and Parallel Connection of Power Diodes; 2.7 Typical Applications of Diodes; 2.8 Standard Datasheet for Diode Selection
ReferencesChapter 3. Power Bipolar Transistors; 3.1 Introduction; 3.2 Basic Structure and Operation; 3.3 Static Characteristics; 3.4 Dynamic Switching Characteristics; 3.5 Transistor Base Drive Applications; 3.6 SPICE Simulation of Bipolar Junction Transistors; 3.7 BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1 Introduction; 4.2 Switching in Power Electronic Circuits; 4.3 General Switching Characteristics; 4.4 The Power MOSFET; 4.5 Future Trends in Power Devices; References; Chapter 5. Insulated Gate Bipolar Transistor; 5.1 Introduction; 5.2 Basic Structure and Operation 5.3 Static Characteristics5.4 Dynamic Switching Characteristics; 5.5 IGBT Performance Parameters; 5.6 Gate Drive Requirements; 5.7 Circuit Models; 5.8 Applications; Further Reading; Chapter 6. Thyristors; 6.1 Introduction; 6.2 Basic Structure and Operation; 6.3 Static Characteristics; 6.4 Dynamic Switching Characteristics; 6.5 Thyristor Parameters; 6.6 Types of Thyristors; 6.7 Gate Drive Requirements; 6.8 PSpice Model; 6.9 Applications; Further Reading; Chapter 7. Gate Turn-off Thyristors; 7.1 Introduction; 7.2 Basic Structure and Operation; 7.3 GTO Thyristor Models 7.4 Static Characteristics7.5 Switching Phases; 7.6 SPICE GTO Model; 7.7 Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1 Introduction; 8.2 Equivalent Circuit and Switching Characteristics; 8.3 Comparison of MCT and Other Power Devices; 8.4 Gate Drive for MCTs; 8.5 Protection of MCTs; 8.6 Simulation Model of an MCT; 8.7 Generation-1 and Generation-2 MCTs; 8.8 N-channel MCT; 8.9 Base Resistance-controlled Thyristor [14]; 8.10 MOS Turn-off Thyristor [15]; 8.11 Applications of PMCT; 8.12 Conclusions; Acknowledgment; 8.13 Appendix; References Chapter 9. Static Induction DevicesSummary; 9.1 Introduction; 9.2 Theory of Static Induction Devices; 9.3 Characteristics of Static Induction Transistor; 9.4 Bipolar Mode Operation of SI devices (BSIT); 9.5 Emitters for Static Induction Devices; 9.6 Static Induction Diode; 9.7 Lateral Punch-through Transistor; 9.8 Static Induction Transistor Logic; 9.9 BJT Saturation Protected by SIT; 9.10 Static Induction MOS Transistor; 9.11 Space Charge Limiting Load (SCLL); 9.12 Power MOS Transistors; 9.13 Static Induction Thyristor; 9.14 Gate Turn Off Thyristor; References; Chapter 10. Diode Recti.ers 10.1 Introduction |
| Record Nr. | UNINA-9910458464303321 |
| Amsterdam ; ; London, : Academic, 2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
| Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Amsterdam ; ; London, : Academic, 2007 |
| Descrizione fisica | 1 online resource (1189 p.) |
| Disciplina | 621.317 |
| Altri autori (Persone) | RashidM. H |
| Collana | Engineering |
| Soggetto topico |
Power electronics
Electronics |
| ISBN |
1-280-74684-X
9786610746842 0-08-046765-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front cover; POWER ELECTRONICS HANDBOOK; Copyright page; Dedication; Table of contents; Preface; Chapter 1. Introduction; 1.1 Power Electronics Defined; 1.2 Key Characteristics; 1.3 Trends in Power Supplies; 1.4 Conversion Examples; 1.5 Tools for Analysis and Design; 1.6 Summary; References; Chapter 2. The Power Diode; 2.1 Diode as a Switch; 2.2 Properties of PN Junction; 2.3 Common Diode Types; 2.4 Typical Diode Ratings; 2.5 Snubber Circuits for Diode; 2.6 Series and Parallel Connection of Power Diodes; 2.7 Typical Applications of Diodes; 2.8 Standard Datasheet for Diode Selection
ReferencesChapter 3. Power Bipolar Transistors; 3.1 Introduction; 3.2 Basic Structure and Operation; 3.3 Static Characteristics; 3.4 Dynamic Switching Characteristics; 3.5 Transistor Base Drive Applications; 3.6 SPICE Simulation of Bipolar Junction Transistors; 3.7 BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1 Introduction; 4.2 Switching in Power Electronic Circuits; 4.3 General Switching Characteristics; 4.4 The Power MOSFET; 4.5 Future Trends in Power Devices; References; Chapter 5. Insulated Gate Bipolar Transistor; 5.1 Introduction; 5.2 Basic Structure and Operation 5.3 Static Characteristics5.4 Dynamic Switching Characteristics; 5.5 IGBT Performance Parameters; 5.6 Gate Drive Requirements; 5.7 Circuit Models; 5.8 Applications; Further Reading; Chapter 6. Thyristors; 6.1 Introduction; 6.2 Basic Structure and Operation; 6.3 Static Characteristics; 6.4 Dynamic Switching Characteristics; 6.5 Thyristor Parameters; 6.6 Types of Thyristors; 6.7 Gate Drive Requirements; 6.8 PSpice Model; 6.9 Applications; Further Reading; Chapter 7. Gate Turn-off Thyristors; 7.1 Introduction; 7.2 Basic Structure and Operation; 7.3 GTO Thyristor Models 7.4 Static Characteristics7.5 Switching Phases; 7.6 SPICE GTO Model; 7.7 Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1 Introduction; 8.2 Equivalent Circuit and Switching Characteristics; 8.3 Comparison of MCT and Other Power Devices; 8.4 Gate Drive for MCTs; 8.5 Protection of MCTs; 8.6 Simulation Model of an MCT; 8.7 Generation-1 and Generation-2 MCTs; 8.8 N-channel MCT; 8.9 Base Resistance-controlled Thyristor [14]; 8.10 MOS Turn-off Thyristor [15]; 8.11 Applications of PMCT; 8.12 Conclusions; Acknowledgment; 8.13 Appendix; References Chapter 9. Static Induction DevicesSummary; 9.1 Introduction; 9.2 Theory of Static Induction Devices; 9.3 Characteristics of Static Induction Transistor; 9.4 Bipolar Mode Operation of SI devices (BSIT); 9.5 Emitters for Static Induction Devices; 9.6 Static Induction Diode; 9.7 Lateral Punch-through Transistor; 9.8 Static Induction Transistor Logic; 9.9 BJT Saturation Protected by SIT; 9.10 Static Induction MOS Transistor; 9.11 Space Charge Limiting Load (SCLL); 9.12 Power MOS Transistors; 9.13 Static Induction Thyristor; 9.14 Gate Turn Off Thyristor; References; Chapter 10. Diode Recti.ers 10.1 Introduction |
| Record Nr. | UNINA-9910784550603321 |
| Amsterdam ; ; London, : Academic, 2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Power electronics handbook : devices, circuits, and applications / / edited by Muhammad H. Rashid
| Power electronics handbook : devices, circuits, and applications / / edited by Muhammad H. Rashid |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Amsterdam ; ; London, : Academic, 2007 |
| Descrizione fisica | 1 online resource (1189 p.) |
| Disciplina | 621.317 |
| Altri autori (Persone) | RashidM. H |
| Collana | Engineering |
| Soggetto topico |
Power electronics
Electronics |
| ISBN |
1-280-74684-X
9786610746842 0-08-046765-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front cover; POWER ELECTRONICS HANDBOOK; Copyright page; Dedication; Table of contents; Preface; Chapter 1. Introduction; 1.1 Power Electronics Defined; 1.2 Key Characteristics; 1.3 Trends in Power Supplies; 1.4 Conversion Examples; 1.5 Tools for Analysis and Design; 1.6 Summary; References; Chapter 2. The Power Diode; 2.1 Diode as a Switch; 2.2 Properties of PN Junction; 2.3 Common Diode Types; 2.4 Typical Diode Ratings; 2.5 Snubber Circuits for Diode; 2.6 Series and Parallel Connection of Power Diodes; 2.7 Typical Applications of Diodes; 2.8 Standard Datasheet for Diode Selection
ReferencesChapter 3. Power Bipolar Transistors; 3.1 Introduction; 3.2 Basic Structure and Operation; 3.3 Static Characteristics; 3.4 Dynamic Switching Characteristics; 3.5 Transistor Base Drive Applications; 3.6 SPICE Simulation of Bipolar Junction Transistors; 3.7 BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1 Introduction; 4.2 Switching in Power Electronic Circuits; 4.3 General Switching Characteristics; 4.4 The Power MOSFET; 4.5 Future Trends in Power Devices; References; Chapter 5. Insulated Gate Bipolar Transistor; 5.1 Introduction; 5.2 Basic Structure and Operation 5.3 Static Characteristics5.4 Dynamic Switching Characteristics; 5.5 IGBT Performance Parameters; 5.6 Gate Drive Requirements; 5.7 Circuit Models; 5.8 Applications; Further Reading; Chapter 6. Thyristors; 6.1 Introduction; 6.2 Basic Structure and Operation; 6.3 Static Characteristics; 6.4 Dynamic Switching Characteristics; 6.5 Thyristor Parameters; 6.6 Types of Thyristors; 6.7 Gate Drive Requirements; 6.8 PSpice Model; 6.9 Applications; Further Reading; Chapter 7. Gate Turn-off Thyristors; 7.1 Introduction; 7.2 Basic Structure and Operation; 7.3 GTO Thyristor Models 7.4 Static Characteristics7.5 Switching Phases; 7.6 SPICE GTO Model; 7.7 Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1 Introduction; 8.2 Equivalent Circuit and Switching Characteristics; 8.3 Comparison of MCT and Other Power Devices; 8.4 Gate Drive for MCTs; 8.5 Protection of MCTs; 8.6 Simulation Model of an MCT; 8.7 Generation-1 and Generation-2 MCTs; 8.8 N-channel MCT; 8.9 Base Resistance-controlled Thyristor [14]; 8.10 MOS Turn-off Thyristor [15]; 8.11 Applications of PMCT; 8.12 Conclusions; Acknowledgment; 8.13 Appendix; References Chapter 9. Static Induction DevicesSummary; 9.1 Introduction; 9.2 Theory of Static Induction Devices; 9.3 Characteristics of Static Induction Transistor; 9.4 Bipolar Mode Operation of SI devices (BSIT); 9.5 Emitters for Static Induction Devices; 9.6 Static Induction Diode; 9.7 Lateral Punch-through Transistor; 9.8 Static Induction Transistor Logic; 9.9 BJT Saturation Protected by SIT; 9.10 Static Induction MOS Transistor; 9.11 Space Charge Limiting Load (SCLL); 9.12 Power MOS Transistors; 9.13 Static Induction Thyristor; 9.14 Gate Turn Off Thyristor; References; Chapter 10. Diode Recti.ers 10.1 Introduction |
| Record Nr. | UNINA-9910825803703321 |
| Amsterdam ; ; London, : Academic, 2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||