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Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid
Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid
Autore Luo Fang Lin
Pubbl/distr/stampa London, : Elsevier Academic, 2005
Descrizione fisica 1 online resource (421 p.)
Disciplina 621.317
Altri autori (Persone) YeHong <1973->
RashidM. H
Soggetto topico Power electronics
Digital electronics
Digital control systems
Soggetto genere / forma Electronic books.
ISBN 1-280-63787-0
9786610637874
0-08-045902-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Digital Power Electronics and Applications; Contents; Preface; Autobiography; 1. Introduction; 1.1 Historical review; 1.1.1 WORK, ENERGY AND HEAT; 1.1.2 DC AND AC EQUIPMENT; DC Power Supply; AC Power Supply; 1.1.3 LOADS; Linear Passive Loads; Linear Dynamic Loads; 1.1.4 IMPEDANCE; 1.1.5 POWERS; Apparent Power S; Power P; Reactive Power Q; 1.2 Traditional parameters; 1.2.1 POWER FACTOR (PF); 1.2.2 POWER-TRANSFER EFFICIENCY (η); 1.2.3 TOTAL HARMONIC DISTORTION (THD); 1.2.4 RIPPLE FACTOR (RF); 1.2.5 APPLICATION EXAMPLES; Power and Efficiency (η); An R-L Circuit Calculation
A Three-Phase Circuit Calculation1.3 Multiple-quadrant operations and choppers; 1.3.1 THE FIRST-QUADRANT CHOPPER; 1.3.2 THE SECOND-QUADRANT CHOPPER; 1.3.3 THE THIRD-QUADRANT CHOPPER; 1.3.4 THE FOURTH-QUADRANT CHOPPER; 1.3.5 THE FIRST-SECOND-QUADRANT CHOPPER; 1.3.6 THE THIRD-FOURTH-QUADRANT CHOPPER; 1.3.7 THE FOUR-QUADRANT CHOPPER; 1.4 Digital power electronics: pump circuits and conversion technology; 1.4.1 FUNDAMENTAL PUMP CIRCUITS; 1.4.2 AC/DC RECTIFIERS; 1.4.3 DC/AC PWM INVERTERS; 1.4.4 DC/DC CONVERTERS; 1.4.5 AC/AC CONVERTERS
1.5 Shortage of analog power electronics and conversion technology1.6 Power semiconductor devices applied in digital power electronics; FURTHER READING; 2. Energy Factor (EF) and Sub-sequential Parameters; 2.1 Introduction; 2.2 Pumping energy (PE); 2.2.1 ENERGY QUANTIZATION; 2.2.2 ENERGY QUANTIZATION FUNCTION; 2.3 Stored energy (SE); 2.3.1 STORED ENERGY IN CONTINUOUS CONDUCTION MODE; Stored Energy (SE); Capacitor-Inductor Stored Energy Ratio (CIR); Energy Losses (EL); Stored Energy Variation on Inductors and Capacitors (VE); 2.3.2 STORED ENERGY IN DISCONTINUOUS CONDUCTION MODE (DCM)
2.4 Energy factor (EF)2.5 Variation energy factor (EF[sub(V)]); 2.6 Time constant, τ, and damping time constant, τ[sub(d)]; 2.6.1 TIME CONSTANT, τ; 2.6.2 DAMPING TIME CONSTANT, τ[sub(d)]; 2.6.3 TIME CONSTANT RATIO, ξ; 2.6.4 MATHEMATICAL MODELING FOR POWER DC/DC CONVERTERS; 2.7 Examples of applications; 2.7.1 A BUCK CONVERTER IN CCM; Buck Converter without Energy Losses (r[sub(L)] = 0Ω); Buck Converter with Small Energy Losses (r[sub(L)] = 1.5Ω); Buck Converter with Energy Losses (r[sub(L)] = 4.5Ω); Buck Converter with Large Energy Losses (r[sub(L)] = 6Ω)
2.7.2 A SUPER-LIFT LUO-CONVERTER IN CCM2.7.3 A BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.4 A BUCK-BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.5 POSITIVE-OUTPUT LUO-CONVERTER IN CCM (NO POWER LOSSES); 2.8 Small signal analysis; 2.8.1 A BUCK CONVERTER IN CCM WITHOUT ENERGY LOSSES (r[sub(L)] = 0); 2.8.2 BUCK-CONVERTER WITH SMALL ENERGY LOSSES (r[sub(L)] = 1.5Ω); 2.8.3 SUPER-LIFT LUO-CONVERTER WITH ENERGY LOSSES (r[sub(L)] = 0.12Ω); FURTHER READING; APPENDIX A - A SECOND-ORDER TRANSFER FUNCTION; A.1 Very Small Damping Time Constant; A.2 Small Damping Time Constant
A.3 Critical Damping Time Constant
Record Nr. UNINA-9910458714403321
Luo Fang Lin  
London, : Elsevier Academic, 2005
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid
Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid
Autore Luo Fang Lin
Pubbl/distr/stampa London, : Elsevier Academic, 2005
Descrizione fisica 1 online resource (421 p.)
Disciplina 621.317
Altri autori (Persone) YeHong <1973->
RashidM. H
Soggetto topico Power electronics
Digital electronics
Digital control systems
ISBN 1-280-63787-0
9786610637874
0-08-045902-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Digital Power Electronics and Applications; Contents; Preface; Autobiography; 1. Introduction; 1.1 Historical review; 1.1.1 WORK, ENERGY AND HEAT; 1.1.2 DC AND AC EQUIPMENT; DC Power Supply; AC Power Supply; 1.1.3 LOADS; Linear Passive Loads; Linear Dynamic Loads; 1.1.4 IMPEDANCE; 1.1.5 POWERS; Apparent Power S; Power P; Reactive Power Q; 1.2 Traditional parameters; 1.2.1 POWER FACTOR (PF); 1.2.2 POWER-TRANSFER EFFICIENCY (η); 1.2.3 TOTAL HARMONIC DISTORTION (THD); 1.2.4 RIPPLE FACTOR (RF); 1.2.5 APPLICATION EXAMPLES; Power and Efficiency (η); An R-L Circuit Calculation
A Three-Phase Circuit Calculation1.3 Multiple-quadrant operations and choppers; 1.3.1 THE FIRST-QUADRANT CHOPPER; 1.3.2 THE SECOND-QUADRANT CHOPPER; 1.3.3 THE THIRD-QUADRANT CHOPPER; 1.3.4 THE FOURTH-QUADRANT CHOPPER; 1.3.5 THE FIRST-SECOND-QUADRANT CHOPPER; 1.3.6 THE THIRD-FOURTH-QUADRANT CHOPPER; 1.3.7 THE FOUR-QUADRANT CHOPPER; 1.4 Digital power electronics: pump circuits and conversion technology; 1.4.1 FUNDAMENTAL PUMP CIRCUITS; 1.4.2 AC/DC RECTIFIERS; 1.4.3 DC/AC PWM INVERTERS; 1.4.4 DC/DC CONVERTERS; 1.4.5 AC/AC CONVERTERS
1.5 Shortage of analog power electronics and conversion technology1.6 Power semiconductor devices applied in digital power electronics; FURTHER READING; 2. Energy Factor (EF) and Sub-sequential Parameters; 2.1 Introduction; 2.2 Pumping energy (PE); 2.2.1 ENERGY QUANTIZATION; 2.2.2 ENERGY QUANTIZATION FUNCTION; 2.3 Stored energy (SE); 2.3.1 STORED ENERGY IN CONTINUOUS CONDUCTION MODE; Stored Energy (SE); Capacitor-Inductor Stored Energy Ratio (CIR); Energy Losses (EL); Stored Energy Variation on Inductors and Capacitors (VE); 2.3.2 STORED ENERGY IN DISCONTINUOUS CONDUCTION MODE (DCM)
2.4 Energy factor (EF)2.5 Variation energy factor (EF[sub(V)]); 2.6 Time constant, τ, and damping time constant, τ[sub(d)]; 2.6.1 TIME CONSTANT, τ; 2.6.2 DAMPING TIME CONSTANT, τ[sub(d)]; 2.6.3 TIME CONSTANT RATIO, ξ; 2.6.4 MATHEMATICAL MODELING FOR POWER DC/DC CONVERTERS; 2.7 Examples of applications; 2.7.1 A BUCK CONVERTER IN CCM; Buck Converter without Energy Losses (r[sub(L)] = 0Ω); Buck Converter with Small Energy Losses (r[sub(L)] = 1.5Ω); Buck Converter with Energy Losses (r[sub(L)] = 4.5Ω); Buck Converter with Large Energy Losses (r[sub(L)] = 6Ω)
2.7.2 A SUPER-LIFT LUO-CONVERTER IN CCM2.7.3 A BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.4 A BUCK-BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.5 POSITIVE-OUTPUT LUO-CONVERTER IN CCM (NO POWER LOSSES); 2.8 Small signal analysis; 2.8.1 A BUCK CONVERTER IN CCM WITHOUT ENERGY LOSSES (r[sub(L)] = 0); 2.8.2 BUCK-CONVERTER WITH SMALL ENERGY LOSSES (r[sub(L)] = 1.5Ω); 2.8.3 SUPER-LIFT LUO-CONVERTER WITH ENERGY LOSSES (r[sub(L)] = 0.12Ω); FURTHER READING; APPENDIX A - A SECOND-ORDER TRANSFER FUNCTION; A.1 Very Small Damping Time Constant; A.2 Small Damping Time Constant
A.3 Critical Damping Time Constant
Record Nr. UNINA-9910784544303321
Luo Fang Lin  
London, : Elsevier Academic, 2005
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid
Digital power electronics and applications [[electronic resource] /] / Fang Lin Luo, Hong Ye, Muhammed Rashid
Autore Luo Fang Lin
Edizione [1st ed.]
Pubbl/distr/stampa London, : Elsevier Academic, 2005
Descrizione fisica 1 online resource (421 p.)
Disciplina 621.317
Altri autori (Persone) YeHong <1973->
RashidM. H
Soggetto topico Power electronics
Digital electronics
Digital control systems
ISBN 1-280-63787-0
9786610637874
0-08-045902-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Digital Power Electronics and Applications; Contents; Preface; Autobiography; 1. Introduction; 1.1 Historical review; 1.1.1 WORK, ENERGY AND HEAT; 1.1.2 DC AND AC EQUIPMENT; DC Power Supply; AC Power Supply; 1.1.3 LOADS; Linear Passive Loads; Linear Dynamic Loads; 1.1.4 IMPEDANCE; 1.1.5 POWERS; Apparent Power S; Power P; Reactive Power Q; 1.2 Traditional parameters; 1.2.1 POWER FACTOR (PF); 1.2.2 POWER-TRANSFER EFFICIENCY (η); 1.2.3 TOTAL HARMONIC DISTORTION (THD); 1.2.4 RIPPLE FACTOR (RF); 1.2.5 APPLICATION EXAMPLES; Power and Efficiency (η); An R-L Circuit Calculation
A Three-Phase Circuit Calculation1.3 Multiple-quadrant operations and choppers; 1.3.1 THE FIRST-QUADRANT CHOPPER; 1.3.2 THE SECOND-QUADRANT CHOPPER; 1.3.3 THE THIRD-QUADRANT CHOPPER; 1.3.4 THE FOURTH-QUADRANT CHOPPER; 1.3.5 THE FIRST-SECOND-QUADRANT CHOPPER; 1.3.6 THE THIRD-FOURTH-QUADRANT CHOPPER; 1.3.7 THE FOUR-QUADRANT CHOPPER; 1.4 Digital power electronics: pump circuits and conversion technology; 1.4.1 FUNDAMENTAL PUMP CIRCUITS; 1.4.2 AC/DC RECTIFIERS; 1.4.3 DC/AC PWM INVERTERS; 1.4.4 DC/DC CONVERTERS; 1.4.5 AC/AC CONVERTERS
1.5 Shortage of analog power electronics and conversion technology1.6 Power semiconductor devices applied in digital power electronics; FURTHER READING; 2. Energy Factor (EF) and Sub-sequential Parameters; 2.1 Introduction; 2.2 Pumping energy (PE); 2.2.1 ENERGY QUANTIZATION; 2.2.2 ENERGY QUANTIZATION FUNCTION; 2.3 Stored energy (SE); 2.3.1 STORED ENERGY IN CONTINUOUS CONDUCTION MODE; Stored Energy (SE); Capacitor-Inductor Stored Energy Ratio (CIR); Energy Losses (EL); Stored Energy Variation on Inductors and Capacitors (VE); 2.3.2 STORED ENERGY IN DISCONTINUOUS CONDUCTION MODE (DCM)
2.4 Energy factor (EF)2.5 Variation energy factor (EF[sub(V)]); 2.6 Time constant, τ, and damping time constant, τ[sub(d)]; 2.6.1 TIME CONSTANT, τ; 2.6.2 DAMPING TIME CONSTANT, τ[sub(d)]; 2.6.3 TIME CONSTANT RATIO, ξ; 2.6.4 MATHEMATICAL MODELING FOR POWER DC/DC CONVERTERS; 2.7 Examples of applications; 2.7.1 A BUCK CONVERTER IN CCM; Buck Converter without Energy Losses (r[sub(L)] = 0Ω); Buck Converter with Small Energy Losses (r[sub(L)] = 1.5Ω); Buck Converter with Energy Losses (r[sub(L)] = 4.5Ω); Buck Converter with Large Energy Losses (r[sub(L)] = 6Ω)
2.7.2 A SUPER-LIFT LUO-CONVERTER IN CCM2.7.3 A BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.4 A BUCK-BOOST CONVERTER IN CCM (NO POWER LOSSES); 2.7.5 POSITIVE-OUTPUT LUO-CONVERTER IN CCM (NO POWER LOSSES); 2.8 Small signal analysis; 2.8.1 A BUCK CONVERTER IN CCM WITHOUT ENERGY LOSSES (r[sub(L)] = 0); 2.8.2 BUCK-CONVERTER WITH SMALL ENERGY LOSSES (r[sub(L)] = 1.5Ω); 2.8.3 SUPER-LIFT LUO-CONVERTER WITH ENERGY LOSSES (r[sub(L)] = 0.12Ω); FURTHER READING; APPENDIX A - A SECOND-ORDER TRANSFER FUNCTION; A.1 Very Small Damping Time Constant; A.2 Small Damping Time Constant
A.3 Critical Damping Time Constant
Record Nr. UNINA-9910816265603321
Luo Fang Lin  
London, : Elsevier Academic, 2005
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Edizione [3rd ed.]
Pubbl/distr/stampa Amsterdam ; ; Boston, : Elsevier/BH, c2011
Descrizione fisica 1 online resource (1409 p.)
Disciplina 621.31/7
Altri autori (Persone) RashidM. H
Soggetto topico Power electronics
Electronics
Soggetto genere / forma Electronic books.
ISBN 1-282-95503-9
9786612955037
0-12-382037-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Power Electronics Handbook; Copyright; Dedication; Table of Contents; Preface for Third Edition; Chapter 1. Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.5. Tools for Analysis and Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronics Devices; Chapter 2. The Power Diode; 2.1. Diode as a Switch; 2.2. Properties of PN Junction; 2.3. Common Diode Types; 2.4. Typical Diode Ratings; 2.5. Snubber Circuits for Diode; 2.6. Series and Parallel Connection of Power Diodes
2.7. Typical Applications of Diodes 2.8. Standard Datasheet for Diode Selection; References; Chapter 3. Power Bipolar Transistors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.4. Dynamic Switching Characteristics; 3.5. Transistor Base Drive Applications; 3.6. SPICE Simulation of Bipolar Junction Transistors; 3.7. BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1. Introduction; 4.2. Switching in Power Electronic Circuits; 4.3. General Switching Characteristics; 4.4. The Power MOSFET; 4.5. Future Trends in Power Devices; References
Chapter 5. Insulated Gate Bipolar Transistor 5.1. Introduction; 5.2. Basic Structure and Operation; 5.3. Static Characteristics; 5.4. Dynamic Switching Characteristics; 5.5. IGBT Performance Parameters; 5.6. Gate Drive Requirements; 5.7. Circuit Models; 5.8. Applications; Further Reading; Chapter 6. Thyristors; 6.1. Introduction; 6.2. Basic Structure and Operation; 6.3. Static Characteristics; 6.4. Dynamic Switching Characteristics; 6.5. Thyristor Parameters; 6.6. Types of Thyristors; 6.7. Gate Drive Requirements; 6.8. PSpice Model; 6.9. Applications; Further Reading
Chapter 7. Gate Turn-off Thyristors 7.1. Introduction; 7.2. Basic Structure and Operation; 7.3. GTO Thyristor Models; 7.4. Static Characteristics; 7.5. Switching Phases; 7.6. SPICE GTO Model; 7.7. Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1. Introduction; 8.2. Equivalent Circuit and Switching Characteristics; 8.3. Comparison of MCT and Other Power Devices; 8.4. Gate Drive for MCTs; 8.5. Protection of MCTs; 8.6. Simulation Model of an MCT; 8.7. Generation-1 and Generation-2 MCTs; 8.8. N-channel MCT; 8.9. Base Resistance-controlled Thyristor
8.10. MOS Turn-off Thyristor 8.11. Applications of PMCT; 8.12. Conclusions; 8.13. Appendix; References; Chapter 9. Static Induction Devices; 9.1. Introduction; 9.2. Theory of Static Induction Devices; 9.3. Characteristics of Static Induction Transistor; 9.4. Bipolar Mode Operation of SI devices (BSIT); 9.5. CMT Conductivity Modulation Transistor; 9.6. Static Induction Diode; 9.7. Lateral Punch-Through Transistor; 9.8. Static Induction Transistor Logic; 9.9. BJT Saturation Protected by SIT; 9.10. Static Induction MOS Transistor; 9.11. Space Charge Limiting Load (SCLL)
9.12. Power MOS Transistors
Record Nr. UNINA-9910459072303321
Amsterdam ; ; Boston, : Elsevier/BH, c2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Power electronics handbook [[e-book] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Power electronics handbook [[e-book] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Edizione [3rd ed.]
Pubbl/distr/stampa Amsterdam ; ; Boston, : Elsevier/BH, c2011
Descrizione fisica 1 online resource (1409 p.)
Disciplina 621.31/7
Altri autori (Persone) RashidM. H
Soggetto topico Power electronics
Electronics
ISBN 1-282-95503-9
9786612955037
0-12-382037-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Power Electronics Handbook; Copyright; Dedication; Table of Contents; Preface for Third Edition; Chapter 1. Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.5. Tools for Analysis and Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronics Devices; Chapter 2. The Power Diode; 2.1. Diode as a Switch; 2.2. Properties of PN Junction; 2.3. Common Diode Types; 2.4. Typical Diode Ratings; 2.5. Snubber Circuits for Diode; 2.6. Series and Parallel Connection of Power Diodes
2.7. Typical Applications of Diodes 2.8. Standard Datasheet for Diode Selection; References; Chapter 3. Power Bipolar Transistors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.4. Dynamic Switching Characteristics; 3.5. Transistor Base Drive Applications; 3.6. SPICE Simulation of Bipolar Junction Transistors; 3.7. BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1. Introduction; 4.2. Switching in Power Electronic Circuits; 4.3. General Switching Characteristics; 4.4. The Power MOSFET; 4.5. Future Trends in Power Devices; References
Chapter 5. Insulated Gate Bipolar Transistor 5.1. Introduction; 5.2. Basic Structure and Operation; 5.3. Static Characteristics; 5.4. Dynamic Switching Characteristics; 5.5. IGBT Performance Parameters; 5.6. Gate Drive Requirements; 5.7. Circuit Models; 5.8. Applications; Further Reading; Chapter 6. Thyristors; 6.1. Introduction; 6.2. Basic Structure and Operation; 6.3. Static Characteristics; 6.4. Dynamic Switching Characteristics; 6.5. Thyristor Parameters; 6.6. Types of Thyristors; 6.7. Gate Drive Requirements; 6.8. PSpice Model; 6.9. Applications; Further Reading
Chapter 7. Gate Turn-off Thyristors 7.1. Introduction; 7.2. Basic Structure and Operation; 7.3. GTO Thyristor Models; 7.4. Static Characteristics; 7.5. Switching Phases; 7.6. SPICE GTO Model; 7.7. Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1. Introduction; 8.2. Equivalent Circuit and Switching Characteristics; 8.3. Comparison of MCT and Other Power Devices; 8.4. Gate Drive for MCTs; 8.5. Protection of MCTs; 8.6. Simulation Model of an MCT; 8.7. Generation-1 and Generation-2 MCTs; 8.8. N-channel MCT; 8.9. Base Resistance-controlled Thyristor
8.10. MOS Turn-off Thyristor 8.11. Applications of PMCT; 8.12. Conclusions; 8.13. Appendix; References; Chapter 9. Static Induction Devices; 9.1. Introduction; 9.2. Theory of Static Induction Devices; 9.3. Characteristics of Static Induction Transistor; 9.4. Bipolar Mode Operation of SI devices (BSIT); 9.5. CMT Conductivity Modulation Transistor; 9.6. Static Induction Diode; 9.7. Lateral Punch-Through Transistor; 9.8. Static Induction Transistor Logic; 9.9. BJT Saturation Protected by SIT; 9.10. Static Induction MOS Transistor; 9.11. Space Charge Limiting Load (SCLL)
9.12. Power MOS Transistors
Record Nr. UNINA-9910785466703321
Amsterdam ; ; Boston, : Elsevier/BH, c2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Power electronics handbook : devices, circuits, and applications / / edited by Muhammad H. Rashid
Power electronics handbook : devices, circuits, and applications / / edited by Muhammad H. Rashid
Edizione [3rd ed.]
Pubbl/distr/stampa Amsterdam ; ; Boston, : Elsevier/BH, c2011
Descrizione fisica 1 online resource (1409 p.)
Disciplina 621.31/7
Altri autori (Persone) RashidM. H
Soggetto topico Power electronics
Electronics
ISBN 1-282-95503-9
9786612955037
0-12-382037-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Power Electronics Handbook; Copyright; Dedication; Table of Contents; Preface for Third Edition; Chapter 1. Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.5. Tools for Analysis and Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronics Devices; Chapter 2. The Power Diode; 2.1. Diode as a Switch; 2.2. Properties of PN Junction; 2.3. Common Diode Types; 2.4. Typical Diode Ratings; 2.5. Snubber Circuits for Diode; 2.6. Series and Parallel Connection of Power Diodes
2.7. Typical Applications of Diodes 2.8. Standard Datasheet for Diode Selection; References; Chapter 3. Power Bipolar Transistors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.4. Dynamic Switching Characteristics; 3.5. Transistor Base Drive Applications; 3.6. SPICE Simulation of Bipolar Junction Transistors; 3.7. BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1. Introduction; 4.2. Switching in Power Electronic Circuits; 4.3. General Switching Characteristics; 4.4. The Power MOSFET; 4.5. Future Trends in Power Devices; References
Chapter 5. Insulated Gate Bipolar Transistor 5.1. Introduction; 5.2. Basic Structure and Operation; 5.3. Static Characteristics; 5.4. Dynamic Switching Characteristics; 5.5. IGBT Performance Parameters; 5.6. Gate Drive Requirements; 5.7. Circuit Models; 5.8. Applications; Further Reading; Chapter 6. Thyristors; 6.1. Introduction; 6.2. Basic Structure and Operation; 6.3. Static Characteristics; 6.4. Dynamic Switching Characteristics; 6.5. Thyristor Parameters; 6.6. Types of Thyristors; 6.7. Gate Drive Requirements; 6.8. PSpice Model; 6.9. Applications; Further Reading
Chapter 7. Gate Turn-off Thyristors 7.1. Introduction; 7.2. Basic Structure and Operation; 7.3. GTO Thyristor Models; 7.4. Static Characteristics; 7.5. Switching Phases; 7.6. SPICE GTO Model; 7.7. Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1. Introduction; 8.2. Equivalent Circuit and Switching Characteristics; 8.3. Comparison of MCT and Other Power Devices; 8.4. Gate Drive for MCTs; 8.5. Protection of MCTs; 8.6. Simulation Model of an MCT; 8.7. Generation-1 and Generation-2 MCTs; 8.8. N-channel MCT; 8.9. Base Resistance-controlled Thyristor
8.10. MOS Turn-off Thyristor 8.11. Applications of PMCT; 8.12. Conclusions; 8.13. Appendix; References; Chapter 9. Static Induction Devices; 9.1. Introduction; 9.2. Theory of Static Induction Devices; 9.3. Characteristics of Static Induction Transistor; 9.4. Bipolar Mode Operation of SI devices (BSIT); 9.5. CMT Conductivity Modulation Transistor; 9.6. Static Induction Diode; 9.7. Lateral Punch-Through Transistor; 9.8. Static Induction Transistor Logic; 9.9. BJT Saturation Protected by SIT; 9.10. Static Induction MOS Transistor; 9.11. Space Charge Limiting Load (SCLL)
9.12. Power MOS Transistors
Record Nr. UNINA-9910816803603321
Amsterdam ; ; Boston, : Elsevier/BH, c2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Edizione [2nd ed.]
Pubbl/distr/stampa Amsterdam ; ; London, : Academic, 2007
Descrizione fisica 1 online resource (1189 p.)
Disciplina 621.317
Altri autori (Persone) RashidM. H
Collana Engineering
Soggetto topico Power electronics
Electronics
Soggetto genere / forma Electronic books.
ISBN 1-280-74684-X
9786610746842
0-08-046765-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front cover; POWER ELECTRONICS HANDBOOK; Copyright page; Dedication; Table of contents; Preface; Chapter 1. Introduction; 1.1 Power Electronics Defined; 1.2 Key Characteristics; 1.3 Trends in Power Supplies; 1.4 Conversion Examples; 1.5 Tools for Analysis and Design; 1.6 Summary; References; Chapter 2. The Power Diode; 2.1 Diode as a Switch; 2.2 Properties of PN Junction; 2.3 Common Diode Types; 2.4 Typical Diode Ratings; 2.5 Snubber Circuits for Diode; 2.6 Series and Parallel Connection of Power Diodes; 2.7 Typical Applications of Diodes; 2.8 Standard Datasheet for Diode Selection
ReferencesChapter 3. Power Bipolar Transistors; 3.1 Introduction; 3.2 Basic Structure and Operation; 3.3 Static Characteristics; 3.4 Dynamic Switching Characteristics; 3.5 Transistor Base Drive Applications; 3.6 SPICE Simulation of Bipolar Junction Transistors; 3.7 BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1 Introduction; 4.2 Switching in Power Electronic Circuits; 4.3 General Switching Characteristics; 4.4 The Power MOSFET; 4.5 Future Trends in Power Devices; References; Chapter 5. Insulated Gate Bipolar Transistor; 5.1 Introduction; 5.2 Basic Structure and Operation
5.3 Static Characteristics5.4 Dynamic Switching Characteristics; 5.5 IGBT Performance Parameters; 5.6 Gate Drive Requirements; 5.7 Circuit Models; 5.8 Applications; Further Reading; Chapter 6. Thyristors; 6.1 Introduction; 6.2 Basic Structure and Operation; 6.3 Static Characteristics; 6.4 Dynamic Switching Characteristics; 6.5 Thyristor Parameters; 6.6 Types of Thyristors; 6.7 Gate Drive Requirements; 6.8 PSpice Model; 6.9 Applications; Further Reading; Chapter 7. Gate Turn-off Thyristors; 7.1 Introduction; 7.2 Basic Structure and Operation; 7.3 GTO Thyristor Models
7.4 Static Characteristics7.5 Switching Phases; 7.6 SPICE GTO Model; 7.7 Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1 Introduction; 8.2 Equivalent Circuit and Switching Characteristics; 8.3 Comparison of MCT and Other Power Devices; 8.4 Gate Drive for MCTs; 8.5 Protection of MCTs; 8.6 Simulation Model of an MCT; 8.7 Generation-1 and Generation-2 MCTs; 8.8 N-channel MCT; 8.9 Base Resistance-controlled Thyristor [14]; 8.10 MOS Turn-off Thyristor [15]; 8.11 Applications of PMCT; 8.12 Conclusions; Acknowledgment; 8.13 Appendix; References
Chapter 9. Static Induction DevicesSummary; 9.1 Introduction; 9.2 Theory of Static Induction Devices; 9.3 Characteristics of Static Induction Transistor; 9.4 Bipolar Mode Operation of SI devices (BSIT); 9.5 Emitters for Static Induction Devices; 9.6 Static Induction Diode; 9.7 Lateral Punch-through Transistor; 9.8 Static Induction Transistor Logic; 9.9 BJT Saturation Protected by SIT; 9.10 Static Induction MOS Transistor; 9.11 Space Charge Limiting Load (SCLL); 9.12 Power MOS Transistors; 9.13 Static Induction Thyristor; 9.14 Gate Turn Off Thyristor; References; Chapter 10. Diode Recti.ers
10.1 Introduction
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Amsterdam ; ; London, : Academic, 2007
Materiale a stampa
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Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Edizione [2nd ed.]
Pubbl/distr/stampa Amsterdam ; ; London, : Academic, 2007
Descrizione fisica 1 online resource (1189 p.)
Disciplina 621.317
Altri autori (Persone) RashidM. H
Collana Engineering
Soggetto topico Power electronics
Electronics
ISBN 1-280-74684-X
9786610746842
0-08-046765-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front cover; POWER ELECTRONICS HANDBOOK; Copyright page; Dedication; Table of contents; Preface; Chapter 1. Introduction; 1.1 Power Electronics Defined; 1.2 Key Characteristics; 1.3 Trends in Power Supplies; 1.4 Conversion Examples; 1.5 Tools for Analysis and Design; 1.6 Summary; References; Chapter 2. The Power Diode; 2.1 Diode as a Switch; 2.2 Properties of PN Junction; 2.3 Common Diode Types; 2.4 Typical Diode Ratings; 2.5 Snubber Circuits for Diode; 2.6 Series and Parallel Connection of Power Diodes; 2.7 Typical Applications of Diodes; 2.8 Standard Datasheet for Diode Selection
ReferencesChapter 3. Power Bipolar Transistors; 3.1 Introduction; 3.2 Basic Structure and Operation; 3.3 Static Characteristics; 3.4 Dynamic Switching Characteristics; 3.5 Transistor Base Drive Applications; 3.6 SPICE Simulation of Bipolar Junction Transistors; 3.7 BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1 Introduction; 4.2 Switching in Power Electronic Circuits; 4.3 General Switching Characteristics; 4.4 The Power MOSFET; 4.5 Future Trends in Power Devices; References; Chapter 5. Insulated Gate Bipolar Transistor; 5.1 Introduction; 5.2 Basic Structure and Operation
5.3 Static Characteristics5.4 Dynamic Switching Characteristics; 5.5 IGBT Performance Parameters; 5.6 Gate Drive Requirements; 5.7 Circuit Models; 5.8 Applications; Further Reading; Chapter 6. Thyristors; 6.1 Introduction; 6.2 Basic Structure and Operation; 6.3 Static Characteristics; 6.4 Dynamic Switching Characteristics; 6.5 Thyristor Parameters; 6.6 Types of Thyristors; 6.7 Gate Drive Requirements; 6.8 PSpice Model; 6.9 Applications; Further Reading; Chapter 7. Gate Turn-off Thyristors; 7.1 Introduction; 7.2 Basic Structure and Operation; 7.3 GTO Thyristor Models
7.4 Static Characteristics7.5 Switching Phases; 7.6 SPICE GTO Model; 7.7 Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1 Introduction; 8.2 Equivalent Circuit and Switching Characteristics; 8.3 Comparison of MCT and Other Power Devices; 8.4 Gate Drive for MCTs; 8.5 Protection of MCTs; 8.6 Simulation Model of an MCT; 8.7 Generation-1 and Generation-2 MCTs; 8.8 N-channel MCT; 8.9 Base Resistance-controlled Thyristor [14]; 8.10 MOS Turn-off Thyristor [15]; 8.11 Applications of PMCT; 8.12 Conclusions; Acknowledgment; 8.13 Appendix; References
Chapter 9. Static Induction DevicesSummary; 9.1 Introduction; 9.2 Theory of Static Induction Devices; 9.3 Characteristics of Static Induction Transistor; 9.4 Bipolar Mode Operation of SI devices (BSIT); 9.5 Emitters for Static Induction Devices; 9.6 Static Induction Diode; 9.7 Lateral Punch-through Transistor; 9.8 Static Induction Transistor Logic; 9.9 BJT Saturation Protected by SIT; 9.10 Static Induction MOS Transistor; 9.11 Space Charge Limiting Load (SCLL); 9.12 Power MOS Transistors; 9.13 Static Induction Thyristor; 9.14 Gate Turn Off Thyristor; References; Chapter 10. Diode Recti.ers
10.1 Introduction
Record Nr. UNINA-9910784550603321
Amsterdam ; ; London, : Academic, 2007
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Power electronics handbook [[electronic resource] ] : devices, circuits, and applications / / edited by Muhammad H. Rashid
Edizione [2nd ed.]
Pubbl/distr/stampa Amsterdam ; ; London, : Academic, 2007
Descrizione fisica 1 online resource (1189 p.)
Disciplina 621.317
Altri autori (Persone) RashidM. H
Collana Engineering
Soggetto topico Power electronics
Electronics
ISBN 1-280-74684-X
9786610746842
0-08-046765-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front cover; POWER ELECTRONICS HANDBOOK; Copyright page; Dedication; Table of contents; Preface; Chapter 1. Introduction; 1.1 Power Electronics Defined; 1.2 Key Characteristics; 1.3 Trends in Power Supplies; 1.4 Conversion Examples; 1.5 Tools for Analysis and Design; 1.6 Summary; References; Chapter 2. The Power Diode; 2.1 Diode as a Switch; 2.2 Properties of PN Junction; 2.3 Common Diode Types; 2.4 Typical Diode Ratings; 2.5 Snubber Circuits for Diode; 2.6 Series and Parallel Connection of Power Diodes; 2.7 Typical Applications of Diodes; 2.8 Standard Datasheet for Diode Selection
ReferencesChapter 3. Power Bipolar Transistors; 3.1 Introduction; 3.2 Basic Structure and Operation; 3.3 Static Characteristics; 3.4 Dynamic Switching Characteristics; 3.5 Transistor Base Drive Applications; 3.6 SPICE Simulation of Bipolar Junction Transistors; 3.7 BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1 Introduction; 4.2 Switching in Power Electronic Circuits; 4.3 General Switching Characteristics; 4.4 The Power MOSFET; 4.5 Future Trends in Power Devices; References; Chapter 5. Insulated Gate Bipolar Transistor; 5.1 Introduction; 5.2 Basic Structure and Operation
5.3 Static Characteristics5.4 Dynamic Switching Characteristics; 5.5 IGBT Performance Parameters; 5.6 Gate Drive Requirements; 5.7 Circuit Models; 5.8 Applications; Further Reading; Chapter 6. Thyristors; 6.1 Introduction; 6.2 Basic Structure and Operation; 6.3 Static Characteristics; 6.4 Dynamic Switching Characteristics; 6.5 Thyristor Parameters; 6.6 Types of Thyristors; 6.7 Gate Drive Requirements; 6.8 PSpice Model; 6.9 Applications; Further Reading; Chapter 7. Gate Turn-off Thyristors; 7.1 Introduction; 7.2 Basic Structure and Operation; 7.3 GTO Thyristor Models
7.4 Static Characteristics7.5 Switching Phases; 7.6 SPICE GTO Model; 7.7 Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1 Introduction; 8.2 Equivalent Circuit and Switching Characteristics; 8.3 Comparison of MCT and Other Power Devices; 8.4 Gate Drive for MCTs; 8.5 Protection of MCTs; 8.6 Simulation Model of an MCT; 8.7 Generation-1 and Generation-2 MCTs; 8.8 N-channel MCT; 8.9 Base Resistance-controlled Thyristor [14]; 8.10 MOS Turn-off Thyristor [15]; 8.11 Applications of PMCT; 8.12 Conclusions; Acknowledgment; 8.13 Appendix; References
Chapter 9. Static Induction DevicesSummary; 9.1 Introduction; 9.2 Theory of Static Induction Devices; 9.3 Characteristics of Static Induction Transistor; 9.4 Bipolar Mode Operation of SI devices (BSIT); 9.5 Emitters for Static Induction Devices; 9.6 Static Induction Diode; 9.7 Lateral Punch-through Transistor; 9.8 Static Induction Transistor Logic; 9.9 BJT Saturation Protected by SIT; 9.10 Static Induction MOS Transistor; 9.11 Space Charge Limiting Load (SCLL); 9.12 Power MOS Transistors; 9.13 Static Induction Thyristor; 9.14 Gate Turn Off Thyristor; References; Chapter 10. Diode Recti.ers
10.1 Introduction
Record Nr. UNINA-9910825803703321
Amsterdam ; ; London, : Academic, 2007
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui