Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements / / Henry Radamson, Lars Thylén
| Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements / / Henry Radamson, Lars Thylén |
| Autore | Radamson Henry |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | London, England ; ; San Diego, California : , : Academic Press, , 2015 |
| Descrizione fisica | 1 online resource (183 p.) |
| Disciplina | 621.36 |
| Soggetto topico |
Nanoelectronics
Nanophotonics |
| ISBN | 0-12-419996-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements; Copyright Page; Contents; Acknowledgments; Introduction: Scope and Purpose of Book; 1 Metal Oxide Semiconductor Field Effect Transistors; Part One: Basics of Metal Oxide Semiconductor Field Effect Transistors; Surface Space-Charge Regions in MOSFETs; Leakage Components in MOSFETs; Subthreshold Current; Gate-Oxide Leakage; S/D Junction Leakage; MOS Capacitors; Static Characterization of MOSFETs; Transfer from 2D to 3D Nanoscaled Transistors; Gate Integration in FinFETs
Parasitic Sources in MOSFET StructureLithography of Nanoscaled MOSFETs; Sidewall Transfer Lithography; Part Two: Strain Engineering in Group IV Materials; Strain Design for MOSFETs; Strain Effect on Carrier Mobility; Basic Definitions; Carrier Mobility in MOSFETs with Strained Si Channel; Strain and Critical Thickness; Global Critical Thickness of SiGe Layers; Critical Thickness of SiGe Layers on Patterned Substrates; Critical Thickness of SiGe Layers Grown on Nano Features; Strain Measurements and Applications; Strain Measurement; Raman Spectroscopy; TEM Analysis High-Resolution X-Ray AnalysisPart Three: Chemical Vapor Deposition of Group IV Materials; Selective and Nonselective Epitaxy; Part Four: Improvement of the Channel Mobility; Effect of Recess Shape in S/D; Channel Materials and Mobility; III-V Materials; Graphene Material; Silicene, Germanene, and Other Similar 2D Materials; Germanium Material; References; 2 Basics of Integrated Photonics; General; Buried Channel Waveguide; Strip-Loaded Waveguide; Ridge Waveguide; Rib Waveguide; Basics of Lasers, Modulators, Detectors, and Wavelength Selective Devices; Lasers; Basics Of Photonic Detectors Detector CharacteristicsResponsivity; Dark Current; Noise Characteristics of Photodetectors; Modulators: Principles and Mechanisms of Optical Modulation; Photonics Switches: Spatial Routing of High-Speed Data Streams; Switches; Devices for Wavelength Division Multiplexed Systems; Devices Based on Spectrally Dependent Interference Effects; References; 3 Silicon and Group IV Photonics; Part One: Silicon Photonics Elements for Integrated Photonics; General Properties; Silicon Photonics Elements for Integrated Photonics: Modulators and Wavelength Selective Devices Silicon Electro-Optic ModulatorsWavelength Selective Devices in Silicon; The Ring Resonator; Part Two: Bandgap Engineering in Group IV Materials for Photonic Application; Part Three: Group IV Photodetectors; Integration of Photodiodes with Waveguide or MOSFETs; PhotoMOSFETs; Group IV-Based Lasers; Part Four: Graphene, New Photonic Material; Photodetectors; References; 4 Moore's Law for Photonics and Electronics; Downscaling of CMOS; Evolution of Logic CMOS Since 1970; Prior to NTRS and ITRS Roadmaps; After NRTS and ITRS; Future of Logic CMOS and Beyond CMOS; Transistor Physical Parameters Lithography |
| Record Nr. | UNINA-9910787067203321 |
Radamson Henry
|
||
| London, England ; ; San Diego, California : , : Academic Press, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements / / Henry Radamson, Lars Thylén
| Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements / / Henry Radamson, Lars Thylén |
| Autore | Radamson Henry |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | London, England ; ; San Diego, California : , : Academic Press, , 2015 |
| Descrizione fisica | 1 online resource (183 p.) |
| Disciplina | 621.36 |
| Soggetto topico |
Nanoelectronics
Nanophotonics |
| ISBN | 0-12-419996-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements; Copyright Page; Contents; Acknowledgments; Introduction: Scope and Purpose of Book; 1 Metal Oxide Semiconductor Field Effect Transistors; Part One: Basics of Metal Oxide Semiconductor Field Effect Transistors; Surface Space-Charge Regions in MOSFETs; Leakage Components in MOSFETs; Subthreshold Current; Gate-Oxide Leakage; S/D Junction Leakage; MOS Capacitors; Static Characterization of MOSFETs; Transfer from 2D to 3D Nanoscaled Transistors; Gate Integration in FinFETs
Parasitic Sources in MOSFET StructureLithography of Nanoscaled MOSFETs; Sidewall Transfer Lithography; Part Two: Strain Engineering in Group IV Materials; Strain Design for MOSFETs; Strain Effect on Carrier Mobility; Basic Definitions; Carrier Mobility in MOSFETs with Strained Si Channel; Strain and Critical Thickness; Global Critical Thickness of SiGe Layers; Critical Thickness of SiGe Layers on Patterned Substrates; Critical Thickness of SiGe Layers Grown on Nano Features; Strain Measurements and Applications; Strain Measurement; Raman Spectroscopy; TEM Analysis High-Resolution X-Ray AnalysisPart Three: Chemical Vapor Deposition of Group IV Materials; Selective and Nonselective Epitaxy; Part Four: Improvement of the Channel Mobility; Effect of Recess Shape in S/D; Channel Materials and Mobility; III-V Materials; Graphene Material; Silicene, Germanene, and Other Similar 2D Materials; Germanium Material; References; 2 Basics of Integrated Photonics; General; Buried Channel Waveguide; Strip-Loaded Waveguide; Ridge Waveguide; Rib Waveguide; Basics of Lasers, Modulators, Detectors, and Wavelength Selective Devices; Lasers; Basics Of Photonic Detectors Detector CharacteristicsResponsivity; Dark Current; Noise Characteristics of Photodetectors; Modulators: Principles and Mechanisms of Optical Modulation; Photonics Switches: Spatial Routing of High-Speed Data Streams; Switches; Devices for Wavelength Division Multiplexed Systems; Devices Based on Spectrally Dependent Interference Effects; References; 3 Silicon and Group IV Photonics; Part One: Silicon Photonics Elements for Integrated Photonics; General Properties; Silicon Photonics Elements for Integrated Photonics: Modulators and Wavelength Selective Devices Silicon Electro-Optic ModulatorsWavelength Selective Devices in Silicon; The Ring Resonator; Part Two: Bandgap Engineering in Group IV Materials for Photonic Application; Part Three: Group IV Photodetectors; Integration of Photodiodes with Waveguide or MOSFETs; PhotoMOSFETs; Group IV-Based Lasers; Part Four: Graphene, New Photonic Material; Photodetectors; References; 4 Moore's Law for Photonics and Electronics; Downscaling of CMOS; Evolution of Logic CMOS Since 1970; Prior to NTRS and ITRS Roadmaps; After NRTS and ITRS; Future of Logic CMOS and Beyond CMOS; Transistor Physical Parameters Lithography |
| Record Nr. | UNINA-9910816206003321 |
|
Radamson Henry
|
||
| London, England ; ; San Diego, California : , : Academic Press, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
anode
anti-phase boundaries (APBs) arsenate arsenite atomic layer etching (ALE) band-to-band tunneling charge-trap synaptic transistor CVD dark current detectors digital etch doping effect dual-selective wet etching epitaxial grown epitaxial growth Fin etching FinFET germanium GeSn GOI heteroepitaxy HfO2/Si0.7Ge0.3 gate stack HNO3 concentration III-V on Si in-plane nanowire interface state density lasers lithium-ion batteries long-term potentiation (LTP) n/a nanowire-based quantum devices neural network neuromorphic system organotrialkoxysilane ozone oxidation p+-Ge0.8Si0.2/Ge stack passivation pattern recognition photodetectors prussian blue nanoparticles quantum computing quantum dot quasi-atomic-layer etching (q-ALE) responsivity selective epitaxial growth (SEG) selective wet etching short-term potentiation (STP) Si-cap Si-MOS silica beads silicon site-controlled spin qubits stacked SiGe/Si threading dislocation densities (TDDs) transistors vertical gate-all-around (vGAA) vertical Gate-all-around (vGAA) water decontamination yolk−shell structure |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
|
Radamson Henry
|
||
| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||