Vai al contenuto principale della pagina

Next Generation Spin Torque Memories / / by Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni, Sanjay Prajapati



(Visualizza in formato marc)    (Visualizza in BIBFRAME)

Autore: Kaushik Brajesh Kumar Visualizza persona
Titolo: Next Generation Spin Torque Memories / / by Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni, Sanjay Prajapati Visualizza cluster
Pubblicazione: Singapore : , : Springer Singapore : , : Imprint : Springer, , 2017
Edizione: 1st ed. 2017.
Descrizione fisica: 1 online resource (XVII, 92 p. 64 illus.)
Disciplina: 621.381
Soggetto topico: Nanotechnology
Electronics
Microelectronics
Electronic circuits
Nanotechnology and Microengineering
Electronics and Microelectronics, Instrumentation
Circuits and Systems
Persona (resp. second.): VermaShivam
KulkarniAnant Aravind
PrajapatiSanjay
Nota di bibliografia: Includes bibliographical references at the end of each chapters.
Nota di contenuto: Introduction to Magnetic Memories and Spin Transfer Torque -- Magnetic Tunnel Junctions (MTJs) -- STT MRAMs -- Hybrid MTJ-CMOS Digital Circuits -- Non-volatile Computing With STT MRAMs -- Spin Transfer Torque Based All Spin Logic (ASL) -- Non-volatile Computing With All Spin Information Processing -- References.
Sommario/riassunto: This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
Titolo autorizzato: Next Generation Spin Torque Memories  Visualizza cluster
ISBN: 981-10-2720-X
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910254327203321
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Serie: SpringerBriefs in Applied Sciences and Technology, . 2191-530X