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Advanced Silicon Materials for Photovoltaic Applications [[electronic resource]]
| Advanced Silicon Materials for Photovoltaic Applications [[electronic resource]] |
| Autore | Pizzini Sergio |
| Pubbl/distr/stampa | Hoboken, : Wiley, 2012 |
| Descrizione fisica | 1 online resource (423 p.) |
| Disciplina |
621.3815/42
621.381542 |
| Soggetto topico |
Photovoltaic cells - Materials
Photovoltaic cells -- Materials Silicon solar cells Silicon solar cells - Materials Photovoltaic cells Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| ISBN |
1-118-31216-3
1-280-69946-9 9786613676443 1-118-31207-4 1-118-31219-8 1-118-31218-X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advanced Silicon Materials for Photovoltaic Applications; Contents; Preface; List of Contributors; Chapter 1 Silicon Science and Technology as the Background of the Current and Future Knowledge Society; 1.1 Introduction; 1.2 Silicon Birth from a Thermonuclear Nucleosynthetic Process; 1.3 Silicon Key Properties; 1.3.1 Chemical and Structural Properties; 1.3.2 Point Defects; 1.3.3 Radiation Damage and Radiation Hardness; 1.4 Advanced Silicon Applications; 1.4.1 Silicon Radiation Detectors; 1.4.2 Photovoltaic Cells for Space Vehicles and Satellite Applications
1.4.3 Advanced Components Based on the Dislocation oxLuminescence in Silicon1.4.4 Silicon Nanostructures; References; Chapter 2 Processes; 2.1 Introduction; 2.2 Gas-Phase Processes; 2.2.1 Preparation and Synthesis of Volatile Silicon Compounds; 2.2.2 Purification of Volatile Silicon Compounds; 2.2.3 Decomposition of Volatile Precursors to Elemental Silicon; 2.2.4 Most Common Reactors; 2.2.5 Recovery of By-Products; 2.3 Production of MG and UMG Silicon and Further Refining Up to Solar Grade by Chemical and Physical Processes; 2.3.1 MG Silicon Production; 2.3.2 Metallurgical Refining Processes 2.3.3 Metal-Metal Extraction Processes2.3.4 Solid/Liquid Extraction Techniques; 2.3.5 Final Purification by Directional Solidification; 2.3.6 Solar-Grade Silicon Production from Pure Raw Materials or Via the Direct Route; 2.4 Fluoride Processes; 2.5 Silicon Production/Refining with High-Temperature Plasmochemical Processes; 2.5.1 Silicon Production Via Plasma Processes; 2.5.2 Silicon Refining Via Plasma Processes; 2.6 Electrochemical Processes: Production of Silicon Without Carbon as Reductant; 2.7 Conclusions; Acknowledgements; References; Chapter 3 Role of Impurities in Solar Silicon 3.1 Introduction3.2 Sources and Refinements of Impurities; 3.3 Segregation of Impurities During Silicon Growth; 3.3.1 Equilibrium Segregation Coefficients; 3.3.2 Effective Segregation Coefficient; 3.3.3 Distribution of Impurities in Silicon Crystal Due to Segregation; 3.4 Role of Metallic Impurities; 3.4.1 Solubility and Diffusivity; 3.4.2 Impact on Charge-Carrier Recombination; 3.4.3 Modeling the Impact of Metallic Impurities on the Solar-Cell Performance; 3.5 Role of Dopants; 3.5.1 Carrier Mobilities in Compensated Silicon; 3.5.2 Recombination in Compensated Silicon 3.5.3 Dopant-Related Recombination Centers3.5.4 Segregation Effects During Ingot Growth; 3.5.5 Detecting Dopants in Compensated Silicon; 3.6 Role of Light Elements; 3.6.1 Oxygen; 3.6.2 Carbon; 3.6.3 Nitrogen; 3.6.4 Germanium; 3.7 Arriving at Solar-Grade Silicon Feedstock Definitions; References; Chapter 4 Gettering Processes and the Role of Extended Defects; 4.1 Introduction; 4.2 Properties of Transition-Metal Impurities in Silicon; 4.2.1 Solubility of Transition-Metal Impurities; 4.2.2 Diffusion of Transition-Metal Impurities; 4.3 Gettering Mechanisms and their Modeling 4.3.1 Segregation Gettering |
| Record Nr. | UNINA-9910141263703321 |
Pizzini Sergio
|
||
| Hoboken, : Wiley, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced Silicon Materials for Photovoltaic Applications [[electronic resource]]
| Advanced Silicon Materials for Photovoltaic Applications [[electronic resource]] |
| Autore | Pizzini Sergio |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Hoboken, : Wiley, 2012 |
| Descrizione fisica | 1 online resource (423 p.) |
| Disciplina |
621.3815/42
621.381542 |
| Soggetto topico |
Photovoltaic cells - Materials
Photovoltaic cells -- Materials Silicon solar cells Silicon solar cells - Materials Photovoltaic cells Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| ISBN |
1-118-31216-3
1-280-69946-9 9786613676443 1-118-31207-4 1-118-31219-8 1-118-31218-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advanced Silicon Materials for Photovoltaic Applications; Contents; Preface; List of Contributors; Chapter 1 Silicon Science and Technology as the Background of the Current and Future Knowledge Society; 1.1 Introduction; 1.2 Silicon Birth from a Thermonuclear Nucleosynthetic Process; 1.3 Silicon Key Properties; 1.3.1 Chemical and Structural Properties; 1.3.2 Point Defects; 1.3.3 Radiation Damage and Radiation Hardness; 1.4 Advanced Silicon Applications; 1.4.1 Silicon Radiation Detectors; 1.4.2 Photovoltaic Cells for Space Vehicles and Satellite Applications
1.4.3 Advanced Components Based on the Dislocation oxLuminescence in Silicon1.4.4 Silicon Nanostructures; References; Chapter 2 Processes; 2.1 Introduction; 2.2 Gas-Phase Processes; 2.2.1 Preparation and Synthesis of Volatile Silicon Compounds; 2.2.2 Purification of Volatile Silicon Compounds; 2.2.3 Decomposition of Volatile Precursors to Elemental Silicon; 2.2.4 Most Common Reactors; 2.2.5 Recovery of By-Products; 2.3 Production of MG and UMG Silicon and Further Refining Up to Solar Grade by Chemical and Physical Processes; 2.3.1 MG Silicon Production; 2.3.2 Metallurgical Refining Processes 2.3.3 Metal-Metal Extraction Processes2.3.4 Solid/Liquid Extraction Techniques; 2.3.5 Final Purification by Directional Solidification; 2.3.6 Solar-Grade Silicon Production from Pure Raw Materials or Via the Direct Route; 2.4 Fluoride Processes; 2.5 Silicon Production/Refining with High-Temperature Plasmochemical Processes; 2.5.1 Silicon Production Via Plasma Processes; 2.5.2 Silicon Refining Via Plasma Processes; 2.6 Electrochemical Processes: Production of Silicon Without Carbon as Reductant; 2.7 Conclusions; Acknowledgements; References; Chapter 3 Role of Impurities in Solar Silicon 3.1 Introduction3.2 Sources and Refinements of Impurities; 3.3 Segregation of Impurities During Silicon Growth; 3.3.1 Equilibrium Segregation Coefficients; 3.3.2 Effective Segregation Coefficient; 3.3.3 Distribution of Impurities in Silicon Crystal Due to Segregation; 3.4 Role of Metallic Impurities; 3.4.1 Solubility and Diffusivity; 3.4.2 Impact on Charge-Carrier Recombination; 3.4.3 Modeling the Impact of Metallic Impurities on the Solar-Cell Performance; 3.5 Role of Dopants; 3.5.1 Carrier Mobilities in Compensated Silicon; 3.5.2 Recombination in Compensated Silicon 3.5.3 Dopant-Related Recombination Centers3.5.4 Segregation Effects During Ingot Growth; 3.5.5 Detecting Dopants in Compensated Silicon; 3.6 Role of Light Elements; 3.6.1 Oxygen; 3.6.2 Carbon; 3.6.3 Nitrogen; 3.6.4 Germanium; 3.7 Arriving at Solar-Grade Silicon Feedstock Definitions; References; Chapter 4 Gettering Processes and the Role of Extended Defects; 4.1 Introduction; 4.2 Properties of Transition-Metal Impurities in Silicon; 4.2.1 Solubility of Transition-Metal Impurities; 4.2.2 Diffusion of Transition-Metal Impurities; 4.3 Gettering Mechanisms and their Modeling 4.3.1 Segregation Gettering |
| Record Nr. | UNINA-9910808006703321 |
|
Pizzini Sergio
|
||
| Hoboken, : Wiley, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physical chemistry of semiconductor materials and processes / / Sergio Pizzini
| Physical chemistry of semiconductor materials and processes / / Sergio Pizzini |
| Autore | Pizzini Sergio |
| Pubbl/distr/stampa | Chichester : , : John Wiley & Sons, Inc., , [2015] |
| Descrizione fisica | 1 online resource (416 p.) |
| Disciplina | 341/.377 |
| Soggetto topico |
Solid state chemistry
Semiconductors Surface chemistry |
| ISBN |
1-118-51460-2
1-118-51455-6 1-118-51461-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright; Contents; Preface; Chapter 1 Thermodynamics of Homogeneous and Heterogeneous Semiconductor Systems; 1.1 Introduction; 1.2 Basic Principles; 1.3 Phases and Their Properties; 1.3.1 Structural Order of a Phase; 1.4 Equations of State of Thermodynamic Systems; 1.4.1 Thermodynamic Transformations and Functions of State; 1.4.2 Work Associated with a Transformation, Entropy and Free Energy; 1.4.3 Chemical Potentials; 1.4.4 Free Energy and Entropy of Spontaneous Processes
1.4.5 Effect of Pressure on Phase Transformations, Polymorphs/Polytypes Formation and Their Thermodynamic Stability1.4.6 Electrochemical Equilibria and Electrochemical Potentials of Charged Species; 1.5 Equilibrium Conditions of Multicomponent Systems Which Do Not React Chemically; 1.6 Thermodynamic Modelling of Binary Phase Diagrams; 1.6.1 Introductory Remarks; 1.6.2 Thermodynamic Modelling of Complete and Incomplete Miscibility; 1.6.3 Thermodynamic Modelling of Intermediate Compound Formation; 1.6.4 Retrograde Solubility, Retrograde Melting and Spinodal Decomposition 1.7 Solution Thermodynamics and Structural and Physical Properties of Selected Semiconductor Systems1.7.1 Introductory Remarks; 1.7.2 Au-Ag and Au-Cu Alloys; 1.7.3 Silicon and Germanium; 1.7.4 Silicon-Germanium Alloys; 1.7.5 Silicon- and Germanium-Binary Alloys with Group III and Group IV Elements; 1.7.6 Silicon-Tin and Germanium-Tin Alloys; 1.7.7 Carbon and Its Polymorphs; 1.7.8 Silicon Carbide; 1.7.9 Selenium-Tellurium Alloys; 1.7.10 Binary and Pseudo-binary Selenides and Tellurides; 1.7.11 Arsenides, Phosphides and Nitrides 1.8 Size-Dependent Properties, Quantum Size Effects and Thermodynamics of NanomaterialsAppendix; Use of Electrochemical Measurements for the Determination of the Thermodynamic Functions of Semiconductors; References; Chapter 2 Point Defects in Semiconductors; 2.1 Introduction; 2.2 Point Defects in Ionic Solids: Modelling the Electrical Conductivity of Ionic Solids by Point Defects-Mediated Charge Transfer; 2.3 Point Defects and Impurities in Elemental Semiconductors; 2.3.1 Introduction 2.3.2 Vacancies and Self-Interstitials in Semiconductors with the Diamond Structure: an Attempt at a Critical Discussion of Their Thermodynamic and Transport Properties2.3.3 Effect of Defect-Defect Interactions on Diffusivity: Trap-and-Pairing Limited Diffusion Processes; 2.3.4 Light Impurities in Group IV Semiconductors: Hydrogen, Carbon, Nitrogen, Oxygen and Their Reactivity; 2.4 Defects and Non-Stoichiometry in Compound Semiconductors; 2.4.1 Structural and Thermodynamic Properties; 2.4.2 Defect Identification in Compound Semiconductors; 2.4.3 Non-Stoichiometry in Compound Semiconductors References |
| Record Nr. | UNINA-9910578700703321 |
|
Pizzini Sergio
|
||
| Chichester : , : John Wiley & Sons, Inc., , [2015] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physical chemistry of semiconductor materials and processes / / Sergio Pizzini
| Physical chemistry of semiconductor materials and processes / / Sergio Pizzini |
| Autore | Pizzini Sergio |
| Pubbl/distr/stampa | Chichester : , : John Wiley & Sons, Inc., , [2015] |
| Descrizione fisica | 1 online resource (416 p.) |
| Disciplina | 341/.377 |
| Soggetto topico |
Solid state chemistry
Semiconductors Surface chemistry |
| ISBN |
1-118-51460-2
1-118-51455-6 1-118-51461-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright; Contents; Preface; Chapter 1 Thermodynamics of Homogeneous and Heterogeneous Semiconductor Systems; 1.1 Introduction; 1.2 Basic Principles; 1.3 Phases and Their Properties; 1.3.1 Structural Order of a Phase; 1.4 Equations of State of Thermodynamic Systems; 1.4.1 Thermodynamic Transformations and Functions of State; 1.4.2 Work Associated with a Transformation, Entropy and Free Energy; 1.4.3 Chemical Potentials; 1.4.4 Free Energy and Entropy of Spontaneous Processes
1.4.5 Effect of Pressure on Phase Transformations, Polymorphs/Polytypes Formation and Their Thermodynamic Stability1.4.6 Electrochemical Equilibria and Electrochemical Potentials of Charged Species; 1.5 Equilibrium Conditions of Multicomponent Systems Which Do Not React Chemically; 1.6 Thermodynamic Modelling of Binary Phase Diagrams; 1.6.1 Introductory Remarks; 1.6.2 Thermodynamic Modelling of Complete and Incomplete Miscibility; 1.6.3 Thermodynamic Modelling of Intermediate Compound Formation; 1.6.4 Retrograde Solubility, Retrograde Melting and Spinodal Decomposition 1.7 Solution Thermodynamics and Structural and Physical Properties of Selected Semiconductor Systems1.7.1 Introductory Remarks; 1.7.2 Au-Ag and Au-Cu Alloys; 1.7.3 Silicon and Germanium; 1.7.4 Silicon-Germanium Alloys; 1.7.5 Silicon- and Germanium-Binary Alloys with Group III and Group IV Elements; 1.7.6 Silicon-Tin and Germanium-Tin Alloys; 1.7.7 Carbon and Its Polymorphs; 1.7.8 Silicon Carbide; 1.7.9 Selenium-Tellurium Alloys; 1.7.10 Binary and Pseudo-binary Selenides and Tellurides; 1.7.11 Arsenides, Phosphides and Nitrides 1.8 Size-Dependent Properties, Quantum Size Effects and Thermodynamics of NanomaterialsAppendix; Use of Electrochemical Measurements for the Determination of the Thermodynamic Functions of Semiconductors; References; Chapter 2 Point Defects in Semiconductors; 2.1 Introduction; 2.2 Point Defects in Ionic Solids: Modelling the Electrical Conductivity of Ionic Solids by Point Defects-Mediated Charge Transfer; 2.3 Point Defects and Impurities in Elemental Semiconductors; 2.3.1 Introduction 2.3.2 Vacancies and Self-Interstitials in Semiconductors with the Diamond Structure: an Attempt at a Critical Discussion of Their Thermodynamic and Transport Properties2.3.3 Effect of Defect-Defect Interactions on Diffusivity: Trap-and-Pairing Limited Diffusion Processes; 2.3.4 Light Impurities in Group IV Semiconductors: Hydrogen, Carbon, Nitrogen, Oxygen and Their Reactivity; 2.4 Defects and Non-Stoichiometry in Compound Semiconductors; 2.4.1 Structural and Thermodynamic Properties; 2.4.2 Defect Identification in Compound Semiconductors; 2.4.3 Non-Stoichiometry in Compound Semiconductors References |
| Record Nr. | UNINA-9910829889503321 |
|
Pizzini Sergio
|
||
| Chichester : , : John Wiley & Sons, Inc., , [2015] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||