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Nitride semiconductor devices [[electronic resource] ] : principles and simulation / / edited by Joachim Piprek
| Nitride semiconductor devices [[electronic resource] ] : principles and simulation / / edited by Joachim Piprek |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH |
| Descrizione fisica | 1 online resource (521 p.) |
| Disciplina |
537.6223
621.38152 |
| Altri autori (Persone) | PiprekJoachim |
| Soggetto topico |
Semiconductors
Nitrides |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-92162-5
9786610921621 3-527-61072-3 3-527-61071-5 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nitride Semiconductor Devices: Principles and Simulation; Contents; Preface; List of Contributors; Part 1 Material Properties; 1 Introduction; 1.1 A Brief History; 1.2 Unique Material Properties; 1.3 Thermal Parameters; References; 2 Electron Bandstructure Parameters; 2.1 Introduction; 2.2 Band Structure Models; 2.3 Band Parameters; 2.3.1 GaN; 2.3.2 AlN; 2.3.3 InN; 2.3.4 AlGaN; 2.3.5 InGaN; 2.3.6 InAlN; 2.3.7 AlGaInN; 2.3.8 Band Offsets; 2.4 Conclusions; References; 3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes
3.1 Why Spontaneous Polarization in III-V Nitrides?3.2 Theoretical Prediction of Polarization Properties in AlN, GaN and InN; 3.3 Piezoelectric and Pyroelectric Effects in III-V Nitrides Nanostructures; 3.4 Polarization Properties in Ternary and Quaternary Alloys: Nonlinear Compositional Dependence and Order vs. Disorder Effects; 3.5 Orientational Dependence of Polarization; References; 4 Transport Parameters for Electrons and Holes; 4.1 Introduction; 4.2 Numerical Simulation Model; 4.2.1 Scattering in the Semi-Classical Boltzmann Equation; 4.3 Analytical Models for the Transport Parameters 4.4 GaN Transport Parameters4.4.1 Electron Transport Coefficients; 4.4.2 Hole Transport Coefficients; 4.5 AlN Transport Parameters; 4.5.1 Electron Transport Coefficients; 4.5.2 Hole Transport Coefficients; 4.6 InN Transport Parameters; 4.6.1 Electron Transport Coefficients; 4.6.2 Hole Transport Coefficients; 4.7 Conclusions; References; 5 Optical Constants of Bulk Nitrides; 5.1 Introduction; 5.2 Dielectric Function and Band Structure; 5.2.1 Fundamental Relations; 5.2.2 Valence Band Ordering, Optical Selection Rules and Anisotropy; 5.3 Experimental Results; 5.3.1 InN; 5.3.2 GaN and AlN 5.3.3 AlGaN Alloys5.3.4 In-rich InGaN and InAlN Alloys; 5.4 Modeling of the Dielectric Function; 5.4.1 Analytical Representation of the Dielectric Function; 5.4.2 Calculation of the Dielectric Function for Alloys; 5.4.3 Influence of Electric Fields on the Dielectric Function; References; 6 Intersubband Absorption in AlGaN/GaN Quantum Wells; 6.1 Introduction; 6.2 Theoretical Model; 6.2.1 Spontaneous and Piezoelectric Polarization; 6.3 Numerical Implementation; 6.3.1 Achieving Self-consistency: The Under-Relaxation Method; 6.3.2 Predictor-Corrector Approach 6.4 Absorption Energy in AlGaN-GaN MQWs6.4.1 Numerical Analysis of Periodic AlGaN-GaN MQWs; 6.4.2 Numerical Analysis of Non-periodic AlGaN-GaN MQWs and Comparison with Experimental Results; 6.5 Conclusions; References; 7 Interband Transitions in InGaN Quantum Wells; 7.1 Introduction; 7.2 Theory; 7.2.1 Bandstructure and Wavefunctions; 7.2.2 Semiconductor Bloch Equations; 7.2.3 Semiconductor Luminescence Equations; 7.2.4 Auger Recombination Processes; 7.3 Theory-Experiment Gain Comparison; 7.4 Absorption/Gain; 7.4.1 General Trends; 7.4.2 Structural Dependence; 7.5 Spontaneous Emission 7.6 Auger Recombinations |
| Record Nr. | UNINA-9910144575503321 |
| Weinheim, : Wiley-VCH | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nitride semiconductor devices [[electronic resource] ] : principles and simulation / / edited by Joachim Piprek
| Nitride semiconductor devices [[electronic resource] ] : principles and simulation / / edited by Joachim Piprek |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH |
| Descrizione fisica | 1 online resource (521 p.) |
| Disciplina |
537.6223
621.38152 |
| Altri autori (Persone) | PiprekJoachim |
| Soggetto topico |
Semiconductors
Nitrides |
| ISBN |
1-280-92162-5
9786610921621 3-527-61072-3 3-527-61071-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nitride Semiconductor Devices: Principles and Simulation; Contents; Preface; List of Contributors; Part 1 Material Properties; 1 Introduction; 1.1 A Brief History; 1.2 Unique Material Properties; 1.3 Thermal Parameters; References; 2 Electron Bandstructure Parameters; 2.1 Introduction; 2.2 Band Structure Models; 2.3 Band Parameters; 2.3.1 GaN; 2.3.2 AlN; 2.3.3 InN; 2.3.4 AlGaN; 2.3.5 InGaN; 2.3.6 InAlN; 2.3.7 AlGaInN; 2.3.8 Band Offsets; 2.4 Conclusions; References; 3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes
3.1 Why Spontaneous Polarization in III-V Nitrides?3.2 Theoretical Prediction of Polarization Properties in AlN, GaN and InN; 3.3 Piezoelectric and Pyroelectric Effects in III-V Nitrides Nanostructures; 3.4 Polarization Properties in Ternary and Quaternary Alloys: Nonlinear Compositional Dependence and Order vs. Disorder Effects; 3.5 Orientational Dependence of Polarization; References; 4 Transport Parameters for Electrons and Holes; 4.1 Introduction; 4.2 Numerical Simulation Model; 4.2.1 Scattering in the Semi-Classical Boltzmann Equation; 4.3 Analytical Models for the Transport Parameters 4.4 GaN Transport Parameters4.4.1 Electron Transport Coefficients; 4.4.2 Hole Transport Coefficients; 4.5 AlN Transport Parameters; 4.5.1 Electron Transport Coefficients; 4.5.2 Hole Transport Coefficients; 4.6 InN Transport Parameters; 4.6.1 Electron Transport Coefficients; 4.6.2 Hole Transport Coefficients; 4.7 Conclusions; References; 5 Optical Constants of Bulk Nitrides; 5.1 Introduction; 5.2 Dielectric Function and Band Structure; 5.2.1 Fundamental Relations; 5.2.2 Valence Band Ordering, Optical Selection Rules and Anisotropy; 5.3 Experimental Results; 5.3.1 InN; 5.3.2 GaN and AlN 5.3.3 AlGaN Alloys5.3.4 In-rich InGaN and InAlN Alloys; 5.4 Modeling of the Dielectric Function; 5.4.1 Analytical Representation of the Dielectric Function; 5.4.2 Calculation of the Dielectric Function for Alloys; 5.4.3 Influence of Electric Fields on the Dielectric Function; References; 6 Intersubband Absorption in AlGaN/GaN Quantum Wells; 6.1 Introduction; 6.2 Theoretical Model; 6.2.1 Spontaneous and Piezoelectric Polarization; 6.3 Numerical Implementation; 6.3.1 Achieving Self-consistency: The Under-Relaxation Method; 6.3.2 Predictor-Corrector Approach 6.4 Absorption Energy in AlGaN-GaN MQWs6.4.1 Numerical Analysis of Periodic AlGaN-GaN MQWs; 6.4.2 Numerical Analysis of Non-periodic AlGaN-GaN MQWs and Comparison with Experimental Results; 6.5 Conclusions; References; 7 Interband Transitions in InGaN Quantum Wells; 7.1 Introduction; 7.2 Theory; 7.2.1 Bandstructure and Wavefunctions; 7.2.2 Semiconductor Bloch Equations; 7.2.3 Semiconductor Luminescence Equations; 7.2.4 Auger Recombination Processes; 7.3 Theory-Experiment Gain Comparison; 7.4 Absorption/Gain; 7.4.1 General Trends; 7.4.2 Structural Dependence; 7.5 Spontaneous Emission 7.6 Auger Recombinations |
| Record Nr. | UNINA-9910830164503321 |
| Weinheim, : Wiley-VCH | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nitride semiconductor devices [[electronic resource] ] : principles and simulation / / edited by Joachim Piprek
| Nitride semiconductor devices [[electronic resource] ] : principles and simulation / / edited by Joachim Piprek |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH |
| Descrizione fisica | 1 online resource (521 p.) |
| Disciplina |
537.6223
621.38152 |
| Altri autori (Persone) | PiprekJoachim |
| Soggetto topico |
Semiconductors
Nitrides |
| ISBN |
1-280-92162-5
9786610921621 3-527-61072-3 3-527-61071-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nitride Semiconductor Devices: Principles and Simulation; Contents; Preface; List of Contributors; Part 1 Material Properties; 1 Introduction; 1.1 A Brief History; 1.2 Unique Material Properties; 1.3 Thermal Parameters; References; 2 Electron Bandstructure Parameters; 2.1 Introduction; 2.2 Band Structure Models; 2.3 Band Parameters; 2.3.1 GaN; 2.3.2 AlN; 2.3.3 InN; 2.3.4 AlGaN; 2.3.5 InGaN; 2.3.6 InAlN; 2.3.7 AlGaInN; 2.3.8 Band Offsets; 2.4 Conclusions; References; 3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes
3.1 Why Spontaneous Polarization in III-V Nitrides?3.2 Theoretical Prediction of Polarization Properties in AlN, GaN and InN; 3.3 Piezoelectric and Pyroelectric Effects in III-V Nitrides Nanostructures; 3.4 Polarization Properties in Ternary and Quaternary Alloys: Nonlinear Compositional Dependence and Order vs. Disorder Effects; 3.5 Orientational Dependence of Polarization; References; 4 Transport Parameters for Electrons and Holes; 4.1 Introduction; 4.2 Numerical Simulation Model; 4.2.1 Scattering in the Semi-Classical Boltzmann Equation; 4.3 Analytical Models for the Transport Parameters 4.4 GaN Transport Parameters4.4.1 Electron Transport Coefficients; 4.4.2 Hole Transport Coefficients; 4.5 AlN Transport Parameters; 4.5.1 Electron Transport Coefficients; 4.5.2 Hole Transport Coefficients; 4.6 InN Transport Parameters; 4.6.1 Electron Transport Coefficients; 4.6.2 Hole Transport Coefficients; 4.7 Conclusions; References; 5 Optical Constants of Bulk Nitrides; 5.1 Introduction; 5.2 Dielectric Function and Band Structure; 5.2.1 Fundamental Relations; 5.2.2 Valence Band Ordering, Optical Selection Rules and Anisotropy; 5.3 Experimental Results; 5.3.1 InN; 5.3.2 GaN and AlN 5.3.3 AlGaN Alloys5.3.4 In-rich InGaN and InAlN Alloys; 5.4 Modeling of the Dielectric Function; 5.4.1 Analytical Representation of the Dielectric Function; 5.4.2 Calculation of the Dielectric Function for Alloys; 5.4.3 Influence of Electric Fields on the Dielectric Function; References; 6 Intersubband Absorption in AlGaN/GaN Quantum Wells; 6.1 Introduction; 6.2 Theoretical Model; 6.2.1 Spontaneous and Piezoelectric Polarization; 6.3 Numerical Implementation; 6.3.1 Achieving Self-consistency: The Under-Relaxation Method; 6.3.2 Predictor-Corrector Approach 6.4 Absorption Energy in AlGaN-GaN MQWs6.4.1 Numerical Analysis of Periodic AlGaN-GaN MQWs; 6.4.2 Numerical Analysis of Non-periodic AlGaN-GaN MQWs and Comparison with Experimental Results; 6.5 Conclusions; References; 7 Interband Transitions in InGaN Quantum Wells; 7.1 Introduction; 7.2 Theory; 7.2.1 Bandstructure and Wavefunctions; 7.2.2 Semiconductor Bloch Equations; 7.2.3 Semiconductor Luminescence Equations; 7.2.4 Auger Recombination Processes; 7.3 Theory-Experiment Gain Comparison; 7.4 Absorption/Gain; 7.4.1 General Trends; 7.4.2 Structural Dependence; 7.5 Spontaneous Emission 7.6 Auger Recombinations |
| Record Nr. | UNINA-9910841894503321 |
| Weinheim, : Wiley-VCH | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
NUSOD '04 : proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices : 24-26 August, 2004, University of California at Santa Brabara / / chairs/editors, Joachim Piprek and Simon Li ; technical co-sponsor, the IEEE Lasers and Electro-Optics Society
| NUSOD '04 : proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices : 24-26 August, 2004, University of California at Santa Brabara / / chairs/editors, Joachim Piprek and Simon Li ; technical co-sponsor, the IEEE Lasers and Electro-Optics Society |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2004 |
| Descrizione fisica | 1 online resource (305 pages) |
| Disciplina | 621.381045 |
| Soggetto topico |
Semiconductors
Nanostructures Optoelectronic devices |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996202173403316 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
NUSOD '04 : proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices : 19-22 September, 2005, Berlin, Germany
| NUSOD '04 : proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices : 19-22 September, 2005, Berlin, Germany |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2005 |
| Soggetto topico |
Optoelectronic devices
Semiconductors |
| ISBN | 1-5386-0241-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996203260703316 |
| [Place of publication not identified], : IEEE, 2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
NUSOD '04 : proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices : 19-22 September, 2005, Berlin, Germany
| NUSOD '04 : proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices : 19-22 September, 2005, Berlin, Germany |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2005 |
| Soggetto topico |
Optoelectronic devices
Semiconductors |
| ISBN | 1-5386-0241-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910146791103321 |
| [Place of publication not identified], : IEEE, 2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
NUSOD '06 : proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices : 11-14 September 2006, Singapore
| NUSOD '06 : proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices : 11-14 September 2006, Singapore |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2006 |
| Disciplina | 621.381/045 |
| Soggetto topico |
Optoelectronic devices - Simulation methods
Optoelectronic devices Semiconductors Nanostructures Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| ISBN | 1-5090-9578-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996216758503316 |
| [Place of publication not identified], : IEEE, 2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
NUSOD '06 : proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices : 11-14 September 2006, Singapore
| NUSOD '06 : proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices : 11-14 September 2006, Singapore |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2006 |
| Disciplina | 621.381/045 |
| Soggetto topico |
Optoelectronic devices - Simulation methods
Optoelectronic devices Semiconductors Nanostructures Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| ISBN | 1-5090-9578-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910142664003321 |
| [Place of publication not identified], : IEEE, 2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Process technology / / Scott Crowder
| Process technology / / Scott Crowder |
| Autore | Crowder Scott |
| Pubbl/distr/stampa | [United States] : , : IEEE, , 2007 |
| Descrizione fisica | 1 online resource (1 video file, 60 mins) : color illustrations |
| Disciplina | 621.381/045 |
| Soggetto topico |
Optoelectronic devices - Simulation methods
Optoelectronic devices Semiconductors Nanostructures Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| ISBN | 1-5090-8583-1 |
| Formato | Videoregistrazioni  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910143014103321 |
Crowder Scott
|
||
| [United States] : , : IEEE, , 2007 | ||
| Videoregistrazioni | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Process technology / / Scott Crowder
| Process technology / / Scott Crowder |
| Autore | Crowder Scott |
| Pubbl/distr/stampa | [United States] : , : IEEE, , 2007 |
| Descrizione fisica | 1 online resource (1 video file, 60 mins) : color illustrations |
| Disciplina | 621.381/045 |
| Soggetto topico |
Optoelectronic devices - Simulation methods
Optoelectronic devices Semiconductors Nanostructures Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| ISBN | 1-5090-8583-1 |
| Formato | Videoregistrazioni |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996211043803316 |
|
Crowder Scott
|
||
| [United States] : , : IEEE, , 2007 | ||
| Videoregistrazioni | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||