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Frontiers in Physics - 2017 & 2018 Editor's choice
| Frontiers in Physics - 2017 & 2018 Editor's choice |
| Autore | Beyer Thomas |
| Pubbl/distr/stampa | Frontiers Media SA, 2019 |
| Descrizione fisica | 1 online resource (190 p.) |
| Soggetto topico |
Physics
Science: general issues |
| Soggetto non controllato |
biomedical physics
Biophysics Computational Physics High-Energy and Astroparticle Physics Interdisciplinary Physics mathematical physics Space Physics |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557236803321 |
Beyer Thomas
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| Frontiers Media SA, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Frontiers in Physics - 2019 Editor's Choice
| Frontiers in Physics - 2019 Editor's Choice |
| Autore | Hansen Alex |
| Pubbl/distr/stampa | Frontiers Media SA, 2020 |
| Descrizione fisica | 1 online resource (186 p.) |
| Soggetto topico |
Physics
Science: general issues |
| Soggetto non controllato |
biophysics
mathematical physics medical physics nuclear physics optics particle physics physical chemistry plasma physics social physics soft matter physics |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557443703321 |
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Hansen Alex
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| Frontiers Media SA, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Optical Switching in Next Generation Data Centers / / edited by Francesco Testa, Lorenzo Pavesi
| Optical Switching in Next Generation Data Centers / / edited by Francesco Testa, Lorenzo Pavesi |
| Edizione | [1st ed. 2018.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2018 |
| Descrizione fisica | 1 online resource (XIV, 336 p. 179 illus., 172 illus. in color.) |
| Disciplina | 621.382 |
| Soggetto topico |
Electrical engineering
Microwaves Optical engineering Signal processing Image processing Speech processing systems Computer networks Application software Power electronics Communications Engineering, Networks Microwaves, RF and Optical Engineering Signal, Image and Speech Processing Computer Communication Networks Information Systems Applications (incl. Internet) Power Electronics, Electrical Machines and Networks |
| ISBN | 3-319-61052-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Part 1. System aspects of intra data center networking -- Chapter 1.Photonics Data Centers -- Chapter 2.Optical switching in Data Centers Architectures based on optical circuit switching -- Chapter 3.Optical switching in Data Centers: Architectures based on optical packet/burst switching -- Part 2. Demonstrations of optical switching in Data Center -- Chapter 4.OSA an Optical Switching Architecture for Data Center Networks with Unprecendented Flexibility -- Chapter 5. The Hi-Ring Architecture for Data Center Networks -- Chapter 6.Low Latency Interconnect Optical Network Switch (LIONS) -- Chapter 7. Torus-Topology Data Center Networks with Hybrid Opto-electronic Routers -- Chapter 8.LIGHTNESS: All-Optical SDN-enabled Intra-DCN with Optical Circuit and Packet Switching -- Chapter 9.Hybrid OPS/EPS Photonic Ethernet Switch and Pure Photonic Packet Switch -- Chapter 10. OPMDC: Optical Pyramid Data Center Network -- Part 3. Technologies for Optical Switching in Data Centers -- Chapter 11.Commercial optical switches -- Chapter 12.Silicon Photonics switch Matrices: Technologies and Architectures -- Chapter 13.Trends in High Speed Interconnects for Datacenter Networking: Multidimensional Formats and Their Enabling DSP -- Chapter 14.Trends in high speed interconnects for data center networking : InP monolithic integration -- Part 4. Prospects and future trends._Chapter 15. The future of switching in data centers. |
| Record Nr. | UNINA-9910299919003321 |
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon nanocrystals [[electronic resource] ] : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan
| Silicon nanocrystals [[electronic resource] ] : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley-Blackwell, 2010 |
| Descrizione fisica | 1 online resource (651 p.) |
| Disciplina |
661.0683
661.0683 22 |
| Altri autori (Persone) |
PavesiLorenzo
TuranRasit |
| Soggetto topico |
Nanosilicon
Silicon crystals |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-48274-2
9786612482748 3-527-62995-5 3-527-62996-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Nanocrystals: Fundamentals, Synthesis and Applications; Contents; List of Contributors; 1 Introduction; References; 2 Electronic and Optical Properties of Silicon Nanocrystals; 2.1 Introduction; 2.2 Ab Initio Calculation for Small Nanocrystals; 2.2.1 Hydrogenated Silicon Nanocrystals; 2.2.2 Oxidized Silicon Nanocrystals; 2.2.3 Doped Silicon Nanocrystals; 2.2.3.1 Single-Doped Silicon Nanocrystals; 2.2.3.2 Codoped Silicon Nanocrystals; 2.2.4 Silicon Nanocrystals Embedded in a SiO2 Matrix; 2.3 Pseudopotential Calculations for Large Nanocrystals; 2.3.1 Effective Optical Gap
2.3.2 Radiative Lifetime2.3.3 Linear Optical Absorption; 2.3.3.1 Interband Absorption; 2.3.3.2 Intraband Absorption; 2.3.3.3 Excited State Absorption; 2.3.4 Third-Order Nonlinear Optical Properties; 2.3.5 Quantum-Confined Stark Effect in Si Nanocrystals; References; 3 Optical Properties of Intrinsic and Shallow Impurity-Doped Silicon Nanocrystals; 3.1 Introduction; 3.2 PL Properties of Intrinsic Silicon Nanocrystals; 3.2.1 Fundamental Properties; 3.2.2 Effect of Size and Shape Distribution on the PL Bandwidth; 3.2.3 Resonant Quenching of PL Band Due to Energy Transfer 3.2.4 PL Quantum Efficiency of Intrinsic Si Nanocrystals3.3 Shallow Impurity-Doped Si Nanocrystals; 3.3.1 Preparation of Impurity-Doped Si Nanocrystals; 3.3.2 PL from B-Doped Si Nanocrystals; 3.3.3 PL from P-Doped Si Nanocrystals; 3.3.4 Electron Spin Resonance Studies of Shallow Impurity-Doped Si Nanocrystals; 3.3.5 Location of Dopant Atoms; 3.4 P and B Codoped Si Nanocrystals; 3.4.1 PL Properties of P and B Codoped Si Nanocrystals; 3.4.2 PL Lifetime of P and B Codoped Si Nanocrystals; 3.4.3 Codoped But Not Compensated Si Nanocrystals; 3.5 Summary; References 4 Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites4.1 Introduction; 4.2 Background; 4.2.1 Basic Concepts Associated with Transport and Quantum Dots; 4.2.2 Previous Studies of Transport in Systems of Si; 4.3 Experimental Details; 4.4 Experimental Results and Their Interpretation; 4.4.1 The Low-x Regime; 4.4.2 The Low-x to Intermediate-x Transition Regime; 4.4.3 The Intermediate-x Regime; 4.4.4 The Percolation Threshold Regime; 4.4.5 The High-x Regime; 4.5 Discussion and Overview; References; 5 Thermal Properties and Heat Transport in Silicon-Based Nanostructures 5.1 Introduction5.2 Thermal Conductivity in Bulk Solids and Nanostructures; 5.2.1 Kinetic Theory: Thermal Properties and Heat Flow; 5.2.2 Lattice Thermal Conductivity; 5.2.3 Electronic Thermal Conductivity; 5.3 Measurements of Thermal Conductivity in Nanostructures; 5.3.1 The 3ω Method; 5.3.2 In-Plane Thermal Conductivity Measurements; 5.3.3 Pump-Probe and Other Optical Measurements; 5.3.4 Raman Scattering and Thermal Conductivity; 5.4 Thermal Properties of Si-Based Nanostructures; 5.4.1 Two- and One-Dimensional Si Nanostructures: Si-on-Insulator and Si Nanowires 5.4.2 Epitaxially Grown Si/SiGe Nanostructures: Superlattices and Cluster Multilayers |
| Record Nr. | UNINA-9910139499203321 |
| Hoboken, NJ, : Wiley-Blackwell, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon nanocrystals [[electronic resource] ] : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan
| Silicon nanocrystals [[electronic resource] ] : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley-Blackwell, 2010 |
| Descrizione fisica | 1 online resource (651 p.) |
| Disciplina |
661.0683
661.0683 22 |
| Altri autori (Persone) |
PavesiLorenzo
TuranRasit |
| Soggetto topico |
Nanosilicon
Silicon crystals |
| ISBN |
1-282-48274-2
9786612482748 3-527-62995-5 3-527-62996-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Nanocrystals: Fundamentals, Synthesis and Applications; Contents; List of Contributors; 1 Introduction; References; 2 Electronic and Optical Properties of Silicon Nanocrystals; 2.1 Introduction; 2.2 Ab Initio Calculation for Small Nanocrystals; 2.2.1 Hydrogenated Silicon Nanocrystals; 2.2.2 Oxidized Silicon Nanocrystals; 2.2.3 Doped Silicon Nanocrystals; 2.2.3.1 Single-Doped Silicon Nanocrystals; 2.2.3.2 Codoped Silicon Nanocrystals; 2.2.4 Silicon Nanocrystals Embedded in a SiO2 Matrix; 2.3 Pseudopotential Calculations for Large Nanocrystals; 2.3.1 Effective Optical Gap
2.3.2 Radiative Lifetime2.3.3 Linear Optical Absorption; 2.3.3.1 Interband Absorption; 2.3.3.2 Intraband Absorption; 2.3.3.3 Excited State Absorption; 2.3.4 Third-Order Nonlinear Optical Properties; 2.3.5 Quantum-Confined Stark Effect in Si Nanocrystals; References; 3 Optical Properties of Intrinsic and Shallow Impurity-Doped Silicon Nanocrystals; 3.1 Introduction; 3.2 PL Properties of Intrinsic Silicon Nanocrystals; 3.2.1 Fundamental Properties; 3.2.2 Effect of Size and Shape Distribution on the PL Bandwidth; 3.2.3 Resonant Quenching of PL Band Due to Energy Transfer 3.2.4 PL Quantum Efficiency of Intrinsic Si Nanocrystals3.3 Shallow Impurity-Doped Si Nanocrystals; 3.3.1 Preparation of Impurity-Doped Si Nanocrystals; 3.3.2 PL from B-Doped Si Nanocrystals; 3.3.3 PL from P-Doped Si Nanocrystals; 3.3.4 Electron Spin Resonance Studies of Shallow Impurity-Doped Si Nanocrystals; 3.3.5 Location of Dopant Atoms; 3.4 P and B Codoped Si Nanocrystals; 3.4.1 PL Properties of P and B Codoped Si Nanocrystals; 3.4.2 PL Lifetime of P and B Codoped Si Nanocrystals; 3.4.3 Codoped But Not Compensated Si Nanocrystals; 3.5 Summary; References 4 Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites4.1 Introduction; 4.2 Background; 4.2.1 Basic Concepts Associated with Transport and Quantum Dots; 4.2.2 Previous Studies of Transport in Systems of Si; 4.3 Experimental Details; 4.4 Experimental Results and Their Interpretation; 4.4.1 The Low-x Regime; 4.4.2 The Low-x to Intermediate-x Transition Regime; 4.4.3 The Intermediate-x Regime; 4.4.4 The Percolation Threshold Regime; 4.4.5 The High-x Regime; 4.5 Discussion and Overview; References; 5 Thermal Properties and Heat Transport in Silicon-Based Nanostructures 5.1 Introduction5.2 Thermal Conductivity in Bulk Solids and Nanostructures; 5.2.1 Kinetic Theory: Thermal Properties and Heat Flow; 5.2.2 Lattice Thermal Conductivity; 5.2.3 Electronic Thermal Conductivity; 5.3 Measurements of Thermal Conductivity in Nanostructures; 5.3.1 The 3ω Method; 5.3.2 In-Plane Thermal Conductivity Measurements; 5.3.3 Pump-Probe and Other Optical Measurements; 5.3.4 Raman Scattering and Thermal Conductivity; 5.4 Thermal Properties of Si-Based Nanostructures; 5.4.1 Two- and One-Dimensional Si Nanostructures: Si-on-Insulator and Si Nanowires 5.4.2 Epitaxially Grown Si/SiGe Nanostructures: Superlattices and Cluster Multilayers |
| Record Nr. | UNINA-9910831077303321 |
| Hoboken, NJ, : Wiley-Blackwell, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon nanocrystals : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan
| Silicon nanocrystals : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley-Blackwell, 2010 |
| Descrizione fisica | 1 online resource (651 p.) |
| Disciplina |
661.0683
661.0683 22 |
| Altri autori (Persone) |
PavesiLorenzo
TuranRasit |
| Soggetto topico |
Silicon
Nanostructured materials |
| ISBN |
9786612482748
9781282482746 1282482742 9783527629954 3527629955 9783527629961 3527629963 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Nanocrystals: Fundamentals, Synthesis and Applications; Contents; List of Contributors; 1 Introduction; References; 2 Electronic and Optical Properties of Silicon Nanocrystals; 2.1 Introduction; 2.2 Ab Initio Calculation for Small Nanocrystals; 2.2.1 Hydrogenated Silicon Nanocrystals; 2.2.2 Oxidized Silicon Nanocrystals; 2.2.3 Doped Silicon Nanocrystals; 2.2.3.1 Single-Doped Silicon Nanocrystals; 2.2.3.2 Codoped Silicon Nanocrystals; 2.2.4 Silicon Nanocrystals Embedded in a SiO2 Matrix; 2.3 Pseudopotential Calculations for Large Nanocrystals; 2.3.1 Effective Optical Gap
2.3.2 Radiative Lifetime2.3.3 Linear Optical Absorption; 2.3.3.1 Interband Absorption; 2.3.3.2 Intraband Absorption; 2.3.3.3 Excited State Absorption; 2.3.4 Third-Order Nonlinear Optical Properties; 2.3.5 Quantum-Confined Stark Effect in Si Nanocrystals; References; 3 Optical Properties of Intrinsic and Shallow Impurity-Doped Silicon Nanocrystals; 3.1 Introduction; 3.2 PL Properties of Intrinsic Silicon Nanocrystals; 3.2.1 Fundamental Properties; 3.2.2 Effect of Size and Shape Distribution on the PL Bandwidth; 3.2.3 Resonant Quenching of PL Band Due to Energy Transfer 3.2.4 PL Quantum Efficiency of Intrinsic Si Nanocrystals3.3 Shallow Impurity-Doped Si Nanocrystals; 3.3.1 Preparation of Impurity-Doped Si Nanocrystals; 3.3.2 PL from B-Doped Si Nanocrystals; 3.3.3 PL from P-Doped Si Nanocrystals; 3.3.4 Electron Spin Resonance Studies of Shallow Impurity-Doped Si Nanocrystals; 3.3.5 Location of Dopant Atoms; 3.4 P and B Codoped Si Nanocrystals; 3.4.1 PL Properties of P and B Codoped Si Nanocrystals; 3.4.2 PL Lifetime of P and B Codoped Si Nanocrystals; 3.4.3 Codoped But Not Compensated Si Nanocrystals; 3.5 Summary; References 4 Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites4.1 Introduction; 4.2 Background; 4.2.1 Basic Concepts Associated with Transport and Quantum Dots; 4.2.2 Previous Studies of Transport in Systems of Si; 4.3 Experimental Details; 4.4 Experimental Results and Their Interpretation; 4.4.1 The Low-x Regime; 4.4.2 The Low-x to Intermediate-x Transition Regime; 4.4.3 The Intermediate-x Regime; 4.4.4 The Percolation Threshold Regime; 4.4.5 The High-x Regime; 4.5 Discussion and Overview; References; 5 Thermal Properties and Heat Transport in Silicon-Based Nanostructures 5.1 Introduction5.2 Thermal Conductivity in Bulk Solids and Nanostructures; 5.2.1 Kinetic Theory: Thermal Properties and Heat Flow; 5.2.2 Lattice Thermal Conductivity; 5.2.3 Electronic Thermal Conductivity; 5.3 Measurements of Thermal Conductivity in Nanostructures; 5.3.1 The 3ω Method; 5.3.2 In-Plane Thermal Conductivity Measurements; 5.3.3 Pump-Probe and Other Optical Measurements; 5.3.4 Raman Scattering and Thermal Conductivity; 5.4 Thermal Properties of Si-Based Nanostructures; 5.4.1 Two- and One-Dimensional Si Nanostructures: Si-on-Insulator and Si Nanowires 5.4.2 Epitaxially Grown Si/SiGe Nanostructures: Superlattices and Cluster Multilayers |
| Record Nr. | UNINA-9911020336003321 |
| Hoboken, NJ, : Wiley-Blackwell, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon Photonics [[electronic resource] /] / edited by Lorenzo Pavesi, David J. Lockwood
| Silicon Photonics [[electronic resource] /] / edited by Lorenzo Pavesi, David J. Lockwood |
| Edizione | [1st ed. 2004.] |
| Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2004 |
| Descrizione fisica | 1 online resource (XVI, 398 p.) |
| Disciplina | 621.36 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Lasers
Photonics Nanotechnology Condensed matter Engineering Quantum optics Optics, Lasers, Photonics, Optical Devices Condensed Matter Physics Engineering, general Quantum Optics |
| ISBN | 3-540-39913-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Silicon Fundamentals for Photonics Applications -- Integrated Photonics -- Monolithic Silicon Microphotonics -- Optical Interconnect -- Monolithic Silicon Light Sources -- Light Generation, Amplification, and Wavelength Conversion via Stimulated Raman Scattering in Silicon Microstructures -- Silicon Photoreceivers -- Silicon-based Waveguides -- Silicon-based Photonic Crystals -- Silicon-based Waveguide Technology for Wavelength Division Multiplexing -- Light Modulation with Silicon Devices -- Subject Index. |
| Record Nr. | UNINA-9910634042803321 |
| Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon photonics II : components and integration / / David J. Lockwood, Lorenzo Pavesi (eds.)
| Silicon photonics II : components and integration / / David J. Lockwood, Lorenzo Pavesi (eds.) |
| Edizione | [1st ed. 2011.] |
| Pubbl/distr/stampa | Berlin, : Springer, 2011 |
| Descrizione fisica | 1 online resource (263 p.) |
| Disciplina | 621.36 |
| Altri autori (Persone) |
LockwoodDavid J
PavesiLorenzo |
| Collana | Topics in applied physics |
| Soggetto topico |
Photonics - Materials
Silicon - Optical properties |
| ISBN |
1-282-97394-0
9786612973949 3-642-10506-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Preface -- Silicon wire waveguiding system: Fundamental characteristics and applications -- Polarization issues in silicon waveguide components and their control using cladding stress -- Photonics and electronics integration -- Germanium-on-silicon light emitters -- Grating couplers and polarization diversity in silicon photonics -- Erbium-doped nanocrystalline silicon for light amplification -- Efficient silicon MOSLEDs -- Germanium as a material to enable silicon photonics -- Ultralow power silicon microdisk modulators for on-chip otical interconnects -- Hybrid silicon photonic integrated circuits for optical networking -- Silicon photonics front-end integration in high-speed SiGe BiCMOS. |
| Record Nr. | UNINA-9910634045903321 |
| Berlin, : Springer, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Photonics III : Systems and Applications / / edited by Lorenzo Pavesi, David J. Lockwood
| Silicon Photonics III : Systems and Applications / / edited by Lorenzo Pavesi, David J. Lockwood |
| Edizione | [1st ed. 2016.] |
| Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2016 |
| Descrizione fisica | 1 online resource (540 p.) |
| Disciplina | 382.45621381045 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Lasers
Photonics Microwaves Optical engineering Optical materials Electronics - Materials Optics, Lasers, Photonics, Optical Devices Microwaves, RF and Optical Engineering Optical and Electronic Materials |
| ISBN | 3-642-10503-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Preface -- A nanophotonic interconnect for high-performance many-core computation -- 200 Gps photonic integrated chip on a silicon platform -- LSI on-chip optical interconnection with silicon nanophotonics -- CMOS Photonics: A Platform for Advanced Optoelectronic Integration -- Silicon based optoelectronics -- Silicon photonics WDM network for multi-chip processor interconnects -- Silicon Photonics: the system on chip perspective -- Silicon photonics for metro/access networks -- Silicon photonics for optical communications -- Silicon photonics for the aerospace industry. |
| Record Nr. | UNINA-9910254638603321 |
| Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon photonics IV : innovative frontiers / / David J. Lockwood and Lorenzo Pavesi, editors
| Silicon photonics IV : innovative frontiers / / David J. Lockwood and Lorenzo Pavesi, editors |
| Edizione | [1st ed. 2021.] |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2021] |
| Descrizione fisica | 1 online resource (XIX, 512 p. 229 illus., 205 illus. in color.) |
| Disciplina | 621.36 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Photonics
Microwaves Lasers |
| ISBN | 3-030-68222-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | PART 1: Advances in Fundamental Research -- Enhanced optical properties of Si nanocrystals -- Inversion-based lasing and Raman lasing in doped silicon -- Reduced graphene oxide–Ge quantum dot nanocomposites -- Stimulated emission in the near infrared from disordered Ge dots -- Lasing in strained Ge microbridges -- Obtaining efficient light emission from crystalline Ge nanostructures -- Spin-based light emission in group IV semiconductors -- Exceptional points sensing with silicon photonics -- Topological photonics in array of silicon microresonators -- Entangled photon generations in silicon photonics -- Sn lasing in silicon -- PART 2: New Technologies -- Parallel digital gradient search technique for rapid automated alignment of devices on silicon photonics integrated circuits -- All optical neural networks based on silicon optical chips -- Transformative optics in regard to planar silicon photonic devices for optical switching and optical computing techniques -- Subwavelength grating periodic structures in silicon-on-insulator technology -- Silicon photonics transceivers for data centers. |
| Record Nr. | UNINA-9910483572103321 |
| Cham, Switzerland : , : Springer, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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