top

  Info

  • Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.

  Info

  • Utilizzare questo link per rimuovere la selezione effettuata.
Stanford R. Ovshinsky [[electronic resource] ] : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz
Stanford R. Ovshinsky [[electronic resource] ] : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz
Autore Ovshinsky Stanford R
Pubbl/distr/stampa Singapore ; ; New Jersey, : World Scientific, c2008
Descrizione fisica 1 online resource (396 p.)
Disciplina 537.622
Altri autori (Persone) FritzscheHellmut
SchwartzBrian B. <1938->
Soggetto topico Amorphous semiconductors
Solar energy
Photovoltaic power generation
Hydrogen as fuel
Soggetto genere / forma Electronic books.
ISBN 981-281-841-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CONTENTS; CHAPTER I: Stan Ovshinsky; CHAPTER II: New Science; Fundamentals of Amorphous Materials, Stanford R. Ovshinsky, Physical Properties of Amorphous Materials, D. Adler, B.B. Schwartz and M.C. Steele eds. Plenum Press, (1985) pp 105-155.; I. INTRODUCTION; II. CHEMICAL CONSIDERATIONS; III. THERMODYNAMIC CONSIDERATIONS; IV. CHEMISTRY AS A DESIGN TOOL; V. MECHANICAL PROPERTIES; VI. PHDNONS; VII. MATERIALS SYNTHESIS FOR DEVICE APPLICATIONS; VIII. CHEMICAL MODIFICATION; IX. CONCLUSION; REFERENCES
Amorphous Materials, Past, Present and Future, S.R. Ovshinsky, J. Non-Crystalline Solids, 73 (1985) pp 395-408.References; Amorphous and Disordered Materials - The Basis of New Industries, S. R. Ovshinsky, Mat. Res. Soc. Symp. Proc., 554 (1999) pp 399-412.; ABSTRACT; INTRODUCTION; ENERGY GENERATION -PHOTO VOL TAleS; ENERGY STORAGE - NICKEL METAL HYDRIDE BATTERIES; INFORMATION; CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; Selected Publications; CHAPTER III: Phase Change Memory
Optically Induced Phase Changes in Amorphous Materials, S.R. Ovshinsky, J. Non-Crystalline Solids, 141 (1992) pp 200-203.1. Introduction; 2. Phase change technology; 3. High speed materials; References; The Relationship Between Crystal Structure and Performance as Optical Recording Media in Te-Ge-Sb Thin Films, D. Strand, J. Gonzalez-Hernandez, B.S. Chao, S.R. Ovshinsky, P. Gasiorowski and D.A. Pawlik, Mat. Res. Soc. Symp. Proc., 230 (1992) pp 251-256; ABSTRACT; INTRODUCTION; EXPERIMENTAL; RESULTS; DISCUSSION AND CONCLUSION; REFERENCE
Ovonic Phase Change Memory Making Possible New Optical and Electrical Devices, S.R. Ovshinsky, 9th Symposium on Phase Change Recording, Japan, (1997) pp 44-49.Acknowledgements; References; Phase-Change Optical Storage Media, Takeo Ohta and S.R. Ovshinsky, Photo-Induced Metastability in Amorphous Semiconductors, Ed. AV. Kolobov, Wiley-VCH (2003) pp 310-326,; 18.1 Introduction; 18.2 Phase-Change Overwrite Optical Disk; 18.2.1 Pbase-Cbange Optical Memory Pbenomena; 18.2.2 The Phase-Change Memory Mechanism; 18.2.3 Phase-Change Overwriting Method; 18.3 Phase-Change Materials
18.3.1 Bonding Features of Chalcogenide Phase-Change Materials18.3.2 Phase-Change Optical Disk Materials for Optical Disk Memory; 18.4 Breakthrough Technologies of the Phase~Change Optical Disk Media; 18.4.1 Basic Layer Structure; 18.4.2 Million Overwrite Cycle Phase Change Optical Disk [6]; 18.5 Thin Substrate Technology of Phase Change Optical Disk Promotes DVD; 18.6 High-Density Recording Technologies for Phase Change Optical Disks; 18.6.1 Short-Wavelength Blue Laser and High Numerical Aperture Lens Recording; 18.6.2 Dual-Layer Recording; 18.6.3 Multi-Level Recording
18.6.4 Near-Field Recording and Super-RENS Recording
Record Nr. UNINA-9910454781103321
Ovshinsky Stanford R  
Singapore ; ; New Jersey, : World Scientific, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Stanford R. Ovshinsky [[electronic resource] ] : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz
Stanford R. Ovshinsky [[electronic resource] ] : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz
Autore Ovshinsky Stanford R
Pubbl/distr/stampa Singapore ; ; New Jersey, : World Scientific, c2008
Descrizione fisica 1 online resource (396 p.)
Disciplina 537.622
Altri autori (Persone) FritzscheHellmut
SchwartzBrian B. <1938->
Soggetto topico Amorphous semiconductors
Solar energy
Photovoltaic power generation
Hydrogen as fuel
ISBN 981-281-841-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CONTENTS; CHAPTER I: Stan Ovshinsky; CHAPTER II: New Science; Fundamentals of Amorphous Materials, Stanford R. Ovshinsky, Physical Properties of Amorphous Materials, D. Adler, B.B. Schwartz and M.C. Steele eds. Plenum Press, (1985) pp 105-155.; I. INTRODUCTION; II. CHEMICAL CONSIDERATIONS; III. THERMODYNAMIC CONSIDERATIONS; IV. CHEMISTRY AS A DESIGN TOOL; V. MECHANICAL PROPERTIES; VI. PHDNONS; VII. MATERIALS SYNTHESIS FOR DEVICE APPLICATIONS; VIII. CHEMICAL MODIFICATION; IX. CONCLUSION; REFERENCES
Amorphous Materials, Past, Present and Future, S.R. Ovshinsky, J. Non-Crystalline Solids, 73 (1985) pp 395-408.References; Amorphous and Disordered Materials - The Basis of New Industries, S. R. Ovshinsky, Mat. Res. Soc. Symp. Proc., 554 (1999) pp 399-412.; ABSTRACT; INTRODUCTION; ENERGY GENERATION -PHOTO VOL TAleS; ENERGY STORAGE - NICKEL METAL HYDRIDE BATTERIES; INFORMATION; CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; Selected Publications; CHAPTER III: Phase Change Memory
Optically Induced Phase Changes in Amorphous Materials, S.R. Ovshinsky, J. Non-Crystalline Solids, 141 (1992) pp 200-203.1. Introduction; 2. Phase change technology; 3. High speed materials; References; The Relationship Between Crystal Structure and Performance as Optical Recording Media in Te-Ge-Sb Thin Films, D. Strand, J. Gonzalez-Hernandez, B.S. Chao, S.R. Ovshinsky, P. Gasiorowski and D.A. Pawlik, Mat. Res. Soc. Symp. Proc., 230 (1992) pp 251-256; ABSTRACT; INTRODUCTION; EXPERIMENTAL; RESULTS; DISCUSSION AND CONCLUSION; REFERENCE
Ovonic Phase Change Memory Making Possible New Optical and Electrical Devices, S.R. Ovshinsky, 9th Symposium on Phase Change Recording, Japan, (1997) pp 44-49.Acknowledgements; References; Phase-Change Optical Storage Media, Takeo Ohta and S.R. Ovshinsky, Photo-Induced Metastability in Amorphous Semiconductors, Ed. AV. Kolobov, Wiley-VCH (2003) pp 310-326,; 18.1 Introduction; 18.2 Phase-Change Overwrite Optical Disk; 18.2.1 Pbase-Cbange Optical Memory Pbenomena; 18.2.2 The Phase-Change Memory Mechanism; 18.2.3 Phase-Change Overwriting Method; 18.3 Phase-Change Materials
18.3.1 Bonding Features of Chalcogenide Phase-Change Materials18.3.2 Phase-Change Optical Disk Materials for Optical Disk Memory; 18.4 Breakthrough Technologies of the Phase~Change Optical Disk Media; 18.4.1 Basic Layer Structure; 18.4.2 Million Overwrite Cycle Phase Change Optical Disk [6]; 18.5 Thin Substrate Technology of Phase Change Optical Disk Promotes DVD; 18.6 High-Density Recording Technologies for Phase Change Optical Disks; 18.6.1 Short-Wavelength Blue Laser and High Numerical Aperture Lens Recording; 18.6.2 Dual-Layer Recording; 18.6.3 Multi-Level Recording
18.6.4 Near-Field Recording and Super-RENS Recording
Record Nr. UNINA-9910778076403321
Ovshinsky Stanford R  
Singapore ; ; New Jersey, : World Scientific, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Stanford R. Ovshinsky : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz
Stanford R. Ovshinsky : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz
Autore Ovshinsky Stanford R
Edizione [1st ed.]
Pubbl/distr/stampa Singapore ; ; New Jersey, : World Scientific, c2008
Descrizione fisica 1 online resource (396 p.)
Disciplina 537.622
Altri autori (Persone) FritzscheHellmut
SchwartzBrian B. <1938->
Soggetto topico Amorphous semiconductors
Solar energy
Photovoltaic power generation
Hydrogen as fuel
ISBN 981-281-841-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CONTENTS; CHAPTER I: Stan Ovshinsky; CHAPTER II: New Science; Fundamentals of Amorphous Materials, Stanford R. Ovshinsky, Physical Properties of Amorphous Materials, D. Adler, B.B. Schwartz and M.C. Steele eds. Plenum Press, (1985) pp 105-155.; I. INTRODUCTION; II. CHEMICAL CONSIDERATIONS; III. THERMODYNAMIC CONSIDERATIONS; IV. CHEMISTRY AS A DESIGN TOOL; V. MECHANICAL PROPERTIES; VI. PHDNONS; VII. MATERIALS SYNTHESIS FOR DEVICE APPLICATIONS; VIII. CHEMICAL MODIFICATION; IX. CONCLUSION; REFERENCES
Amorphous Materials, Past, Present and Future, S.R. Ovshinsky, J. Non-Crystalline Solids, 73 (1985) pp 395-408.References; Amorphous and Disordered Materials - The Basis of New Industries, S. R. Ovshinsky, Mat. Res. Soc. Symp. Proc., 554 (1999) pp 399-412.; ABSTRACT; INTRODUCTION; ENERGY GENERATION -PHOTO VOL TAleS; ENERGY STORAGE - NICKEL METAL HYDRIDE BATTERIES; INFORMATION; CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; Selected Publications; CHAPTER III: Phase Change Memory
Optically Induced Phase Changes in Amorphous Materials, S.R. Ovshinsky, J. Non-Crystalline Solids, 141 (1992) pp 200-203.1. Introduction; 2. Phase change technology; 3. High speed materials; References; The Relationship Between Crystal Structure and Performance as Optical Recording Media in Te-Ge-Sb Thin Films, D. Strand, J. Gonzalez-Hernandez, B.S. Chao, S.R. Ovshinsky, P. Gasiorowski and D.A. Pawlik, Mat. Res. Soc. Symp. Proc., 230 (1992) pp 251-256; ABSTRACT; INTRODUCTION; EXPERIMENTAL; RESULTS; DISCUSSION AND CONCLUSION; REFERENCE
Ovonic Phase Change Memory Making Possible New Optical and Electrical Devices, S.R. Ovshinsky, 9th Symposium on Phase Change Recording, Japan, (1997) pp 44-49.Acknowledgements; References; Phase-Change Optical Storage Media, Takeo Ohta and S.R. Ovshinsky, Photo-Induced Metastability in Amorphous Semiconductors, Ed. AV. Kolobov, Wiley-VCH (2003) pp 310-326,; 18.1 Introduction; 18.2 Phase-Change Overwrite Optical Disk; 18.2.1 Pbase-Cbange Optical Memory Pbenomena; 18.2.2 The Phase-Change Memory Mechanism; 18.2.3 Phase-Change Overwriting Method; 18.3 Phase-Change Materials
18.3.1 Bonding Features of Chalcogenide Phase-Change Materials18.3.2 Phase-Change Optical Disk Materials for Optical Disk Memory; 18.4 Breakthrough Technologies of the Phase~Change Optical Disk Media; 18.4.1 Basic Layer Structure; 18.4.2 Million Overwrite Cycle Phase Change Optical Disk [6]; 18.5 Thin Substrate Technology of Phase Change Optical Disk Promotes DVD; 18.6 High-Density Recording Technologies for Phase Change Optical Disks; 18.6.1 Short-Wavelength Blue Laser and High Numerical Aperture Lens Recording; 18.6.2 Dual-Layer Recording; 18.6.3 Multi-Level Recording
18.6.4 Near-Field Recording and Super-RENS Recording
Altri titoli varianti Science and technology of an American genius, Stanford R. Ovshinsky
Record Nr. UNINA-9910814885803321
Ovshinsky Stanford R  
Singapore ; ; New Jersey, : World Scientific, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui