Stanford R. Ovshinsky [[electronic resource] ] : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz |
Autore | Ovshinsky Stanford R |
Pubbl/distr/stampa | Singapore ; ; New Jersey, : World Scientific, c2008 |
Descrizione fisica | 1 online resource (396 p.) |
Disciplina | 537.622 |
Altri autori (Persone) |
FritzscheHellmut
SchwartzBrian B. <1938-> |
Soggetto topico |
Amorphous semiconductors
Solar energy Photovoltaic power generation Hydrogen as fuel |
Soggetto genere / forma | Electronic books. |
ISBN | 981-281-841-3 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
CONTENTS; CHAPTER I: Stan Ovshinsky; CHAPTER II: New Science; Fundamentals of Amorphous Materials, Stanford R. Ovshinsky, Physical Properties of Amorphous Materials, D. Adler, B.B. Schwartz and M.C. Steele eds. Plenum Press, (1985) pp 105-155.; I. INTRODUCTION; II. CHEMICAL CONSIDERATIONS; III. THERMODYNAMIC CONSIDERATIONS; IV. CHEMISTRY AS A DESIGN TOOL; V. MECHANICAL PROPERTIES; VI. PHDNONS; VII. MATERIALS SYNTHESIS FOR DEVICE APPLICATIONS; VIII. CHEMICAL MODIFICATION; IX. CONCLUSION; REFERENCES
Amorphous Materials, Past, Present and Future, S.R. Ovshinsky, J. Non-Crystalline Solids, 73 (1985) pp 395-408.References; Amorphous and Disordered Materials - The Basis of New Industries, S. R. Ovshinsky, Mat. Res. Soc. Symp. Proc., 554 (1999) pp 399-412.; ABSTRACT; INTRODUCTION; ENERGY GENERATION -PHOTO VOL TAleS; ENERGY STORAGE - NICKEL METAL HYDRIDE BATTERIES; INFORMATION; CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; Selected Publications; CHAPTER III: Phase Change Memory Optically Induced Phase Changes in Amorphous Materials, S.R. Ovshinsky, J. Non-Crystalline Solids, 141 (1992) pp 200-203.1. Introduction; 2. Phase change technology; 3. High speed materials; References; The Relationship Between Crystal Structure and Performance as Optical Recording Media in Te-Ge-Sb Thin Films, D. Strand, J. Gonzalez-Hernandez, B.S. Chao, S.R. Ovshinsky, P. Gasiorowski and D.A. Pawlik, Mat. Res. Soc. Symp. Proc., 230 (1992) pp 251-256; ABSTRACT; INTRODUCTION; EXPERIMENTAL; RESULTS; DISCUSSION AND CONCLUSION; REFERENCE Ovonic Phase Change Memory Making Possible New Optical and Electrical Devices, S.R. Ovshinsky, 9th Symposium on Phase Change Recording, Japan, (1997) pp 44-49.Acknowledgements; References; Phase-Change Optical Storage Media, Takeo Ohta and S.R. Ovshinsky, Photo-Induced Metastability in Amorphous Semiconductors, Ed. AV. Kolobov, Wiley-VCH (2003) pp 310-326,; 18.1 Introduction; 18.2 Phase-Change Overwrite Optical Disk; 18.2.1 Pbase-Cbange Optical Memory Pbenomena; 18.2.2 The Phase-Change Memory Mechanism; 18.2.3 Phase-Change Overwriting Method; 18.3 Phase-Change Materials 18.3.1 Bonding Features of Chalcogenide Phase-Change Materials18.3.2 Phase-Change Optical Disk Materials for Optical Disk Memory; 18.4 Breakthrough Technologies of the Phase~Change Optical Disk Media; 18.4.1 Basic Layer Structure; 18.4.2 Million Overwrite Cycle Phase Change Optical Disk [6]; 18.5 Thin Substrate Technology of Phase Change Optical Disk Promotes DVD; 18.6 High-Density Recording Technologies for Phase Change Optical Disks; 18.6.1 Short-Wavelength Blue Laser and High Numerical Aperture Lens Recording; 18.6.2 Dual-Layer Recording; 18.6.3 Multi-Level Recording 18.6.4 Near-Field Recording and Super-RENS Recording |
Record Nr. | UNINA-9910454781103321 |
Ovshinsky Stanford R | ||
Singapore ; ; New Jersey, : World Scientific, c2008 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Stanford R. Ovshinsky [[electronic resource] ] : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz |
Autore | Ovshinsky Stanford R |
Pubbl/distr/stampa | Singapore ; ; New Jersey, : World Scientific, c2008 |
Descrizione fisica | 1 online resource (396 p.) |
Disciplina | 537.622 |
Altri autori (Persone) |
FritzscheHellmut
SchwartzBrian B. <1938-> |
Soggetto topico |
Amorphous semiconductors
Solar energy Photovoltaic power generation Hydrogen as fuel |
ISBN | 981-281-841-3 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
CONTENTS; CHAPTER I: Stan Ovshinsky; CHAPTER II: New Science; Fundamentals of Amorphous Materials, Stanford R. Ovshinsky, Physical Properties of Amorphous Materials, D. Adler, B.B. Schwartz and M.C. Steele eds. Plenum Press, (1985) pp 105-155.; I. INTRODUCTION; II. CHEMICAL CONSIDERATIONS; III. THERMODYNAMIC CONSIDERATIONS; IV. CHEMISTRY AS A DESIGN TOOL; V. MECHANICAL PROPERTIES; VI. PHDNONS; VII. MATERIALS SYNTHESIS FOR DEVICE APPLICATIONS; VIII. CHEMICAL MODIFICATION; IX. CONCLUSION; REFERENCES
Amorphous Materials, Past, Present and Future, S.R. Ovshinsky, J. Non-Crystalline Solids, 73 (1985) pp 395-408.References; Amorphous and Disordered Materials - The Basis of New Industries, S. R. Ovshinsky, Mat. Res. Soc. Symp. Proc., 554 (1999) pp 399-412.; ABSTRACT; INTRODUCTION; ENERGY GENERATION -PHOTO VOL TAleS; ENERGY STORAGE - NICKEL METAL HYDRIDE BATTERIES; INFORMATION; CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; Selected Publications; CHAPTER III: Phase Change Memory Optically Induced Phase Changes in Amorphous Materials, S.R. Ovshinsky, J. Non-Crystalline Solids, 141 (1992) pp 200-203.1. Introduction; 2. Phase change technology; 3. High speed materials; References; The Relationship Between Crystal Structure and Performance as Optical Recording Media in Te-Ge-Sb Thin Films, D. Strand, J. Gonzalez-Hernandez, B.S. Chao, S.R. Ovshinsky, P. Gasiorowski and D.A. Pawlik, Mat. Res. Soc. Symp. Proc., 230 (1992) pp 251-256; ABSTRACT; INTRODUCTION; EXPERIMENTAL; RESULTS; DISCUSSION AND CONCLUSION; REFERENCE Ovonic Phase Change Memory Making Possible New Optical and Electrical Devices, S.R. Ovshinsky, 9th Symposium on Phase Change Recording, Japan, (1997) pp 44-49.Acknowledgements; References; Phase-Change Optical Storage Media, Takeo Ohta and S.R. Ovshinsky, Photo-Induced Metastability in Amorphous Semiconductors, Ed. AV. Kolobov, Wiley-VCH (2003) pp 310-326,; 18.1 Introduction; 18.2 Phase-Change Overwrite Optical Disk; 18.2.1 Pbase-Cbange Optical Memory Pbenomena; 18.2.2 The Phase-Change Memory Mechanism; 18.2.3 Phase-Change Overwriting Method; 18.3 Phase-Change Materials 18.3.1 Bonding Features of Chalcogenide Phase-Change Materials18.3.2 Phase-Change Optical Disk Materials for Optical Disk Memory; 18.4 Breakthrough Technologies of the Phase~Change Optical Disk Media; 18.4.1 Basic Layer Structure; 18.4.2 Million Overwrite Cycle Phase Change Optical Disk [6]; 18.5 Thin Substrate Technology of Phase Change Optical Disk Promotes DVD; 18.6 High-Density Recording Technologies for Phase Change Optical Disks; 18.6.1 Short-Wavelength Blue Laser and High Numerical Aperture Lens Recording; 18.6.2 Dual-Layer Recording; 18.6.3 Multi-Level Recording 18.6.4 Near-Field Recording and Super-RENS Recording |
Record Nr. | UNINA-9910778076403321 |
Ovshinsky Stanford R | ||
Singapore ; ; New Jersey, : World Scientific, c2008 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Stanford R. Ovshinsky : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz |
Autore | Ovshinsky Stanford R |
Edizione | [1st ed.] |
Pubbl/distr/stampa | Singapore ; ; New Jersey, : World Scientific, c2008 |
Descrizione fisica | 1 online resource (396 p.) |
Disciplina | 537.622 |
Altri autori (Persone) |
FritzscheHellmut
SchwartzBrian B. <1938-> |
Soggetto topico |
Amorphous semiconductors
Solar energy Photovoltaic power generation Hydrogen as fuel |
ISBN | 981-281-841-3 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
CONTENTS; CHAPTER I: Stan Ovshinsky; CHAPTER II: New Science; Fundamentals of Amorphous Materials, Stanford R. Ovshinsky, Physical Properties of Amorphous Materials, D. Adler, B.B. Schwartz and M.C. Steele eds. Plenum Press, (1985) pp 105-155.; I. INTRODUCTION; II. CHEMICAL CONSIDERATIONS; III. THERMODYNAMIC CONSIDERATIONS; IV. CHEMISTRY AS A DESIGN TOOL; V. MECHANICAL PROPERTIES; VI. PHDNONS; VII. MATERIALS SYNTHESIS FOR DEVICE APPLICATIONS; VIII. CHEMICAL MODIFICATION; IX. CONCLUSION; REFERENCES
Amorphous Materials, Past, Present and Future, S.R. Ovshinsky, J. Non-Crystalline Solids, 73 (1985) pp 395-408.References; Amorphous and Disordered Materials - The Basis of New Industries, S. R. Ovshinsky, Mat. Res. Soc. Symp. Proc., 554 (1999) pp 399-412.; ABSTRACT; INTRODUCTION; ENERGY GENERATION -PHOTO VOL TAleS; ENERGY STORAGE - NICKEL METAL HYDRIDE BATTERIES; INFORMATION; CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; Selected Publications; CHAPTER III: Phase Change Memory Optically Induced Phase Changes in Amorphous Materials, S.R. Ovshinsky, J. Non-Crystalline Solids, 141 (1992) pp 200-203.1. Introduction; 2. Phase change technology; 3. High speed materials; References; The Relationship Between Crystal Structure and Performance as Optical Recording Media in Te-Ge-Sb Thin Films, D. Strand, J. Gonzalez-Hernandez, B.S. Chao, S.R. Ovshinsky, P. Gasiorowski and D.A. Pawlik, Mat. Res. Soc. Symp. Proc., 230 (1992) pp 251-256; ABSTRACT; INTRODUCTION; EXPERIMENTAL; RESULTS; DISCUSSION AND CONCLUSION; REFERENCE Ovonic Phase Change Memory Making Possible New Optical and Electrical Devices, S.R. Ovshinsky, 9th Symposium on Phase Change Recording, Japan, (1997) pp 44-49.Acknowledgements; References; Phase-Change Optical Storage Media, Takeo Ohta and S.R. Ovshinsky, Photo-Induced Metastability in Amorphous Semiconductors, Ed. AV. Kolobov, Wiley-VCH (2003) pp 310-326,; 18.1 Introduction; 18.2 Phase-Change Overwrite Optical Disk; 18.2.1 Pbase-Cbange Optical Memory Pbenomena; 18.2.2 The Phase-Change Memory Mechanism; 18.2.3 Phase-Change Overwriting Method; 18.3 Phase-Change Materials 18.3.1 Bonding Features of Chalcogenide Phase-Change Materials18.3.2 Phase-Change Optical Disk Materials for Optical Disk Memory; 18.4 Breakthrough Technologies of the Phase~Change Optical Disk Media; 18.4.1 Basic Layer Structure; 18.4.2 Million Overwrite Cycle Phase Change Optical Disk [6]; 18.5 Thin Substrate Technology of Phase Change Optical Disk Promotes DVD; 18.6 High-Density Recording Technologies for Phase Change Optical Disks; 18.6.1 Short-Wavelength Blue Laser and High Numerical Aperture Lens Recording; 18.6.2 Dual-Layer Recording; 18.6.3 Multi-Level Recording 18.6.4 Near-Field Recording and Super-RENS Recording |
Altri titoli varianti | Science and technology of an American genius, Stanford R. Ovshinsky |
Record Nr. | UNINA-9910814885803321 |
Ovshinsky Stanford R | ||
Singapore ; ; New Jersey, : World Scientific, c2008 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|