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Ferroelectric Random Access Memories [[electronic resource] ] : Fundamentals and Applications / / edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto
| Ferroelectric Random Access Memories [[electronic resource] ] : Fundamentals and Applications / / edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto |
| Edizione | [1st ed. 2004.] |
| Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2004 |
| Descrizione fisica | 1 online resource (XIII, 291 p.) |
| Disciplina | 621.39/73 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Metals
Optical materials Electronic materials Condensed matter Solid state physics Spectroscopy Microscopy Metallic Materials Optical and Electronic Materials Condensed Matter Physics Solid State Physics Spectroscopy and Microscopy |
| ISBN | 3-540-45163-3 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Part I Ferroelectric Thin Films: Overview -- Novel Si-substituted Ferroelectric Films -- Static and Dynamic Properties of Domains -- Nanoscale Phenomena in Ferroelectric Thin Films -- Part II Deposition and Characterization Methods: Sputtering Techniques -- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films -- Recent Development of Ferroelectric Thin Films by MOCVD -- Materials Integration Strategies -- Characterization by Scanning Nonlinear Dielectric Microscopy -- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs -- Operation Principle and Circuit Design Issues -- High Density Integration -- Testing and Reliability -- Part IV Advanced-Type Memories: Chain FeRAMs -- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM -- FET-type FeRAMs -- Part V Applications and Future Prospects: Application to Future Information Technology World -- Subject Index. |
| Record Nr. | UNINA-9910634053103321 |
| Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Ferroelectric Thin Films [[electronic resource] ] : Basic Properties and Device Physics for Memory Applications / / edited by Masanori Okuyama, Yoshihiro Ishibashi
| Ferroelectric Thin Films [[electronic resource] ] : Basic Properties and Device Physics for Memory Applications / / edited by Masanori Okuyama, Yoshihiro Ishibashi |
| Edizione | [1st ed. 2005.] |
| Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2005 |
| Descrizione fisica | 1 online resource (XIII, 244 p.) |
| Disciplina | 538 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Magnetism
Magnetic materials Crystallography Electronics Microelectronics Metals Engineering Magnetism, Magnetic Materials Crystallography and Scattering Methods Electronics and Microelectronics, Instrumentation Metallic Materials Engineering, general |
| ISBN |
1-281-39020-8
9786611390204 3-540-31479-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films -- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films -- PB-Based Ferroelectric Thin Films Prepared by MOCVD -- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films -- Rhombohedral PZT Thin Films Prepared by Sputtering -- Scanning Nonlinear Dielectric Microscope -- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary -- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions -- Relaxor Behaviors in Perovskite-Type Dielectric Compounds -- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique -- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics -- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film -- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure. |
| Record Nr. | UNINA-9910634037903321 |
| Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Ferroelectric-Gate Field Effect Transistor Memories [[electronic resource] ] : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
| Ferroelectric-Gate Field Effect Transistor Memories [[electronic resource] ] : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| Edizione | [2nd ed. 2020.] |
| Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (XIV, 425 p. 313 illus., 183 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| ISBN | 981-15-1212-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects. |
| Record Nr. | UNISA-996418178403316 |
| Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
| Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| Edizione | [2nd ed. 2020.] |
| Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (XIV, 425 p. 313 illus., 183 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| ISBN | 981-15-1212-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects. |
| Record Nr. | UNINA-9910410005303321 |
| Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
| Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| Edizione | [1st ed. 2016.] |
| Pubbl/distr/stampa | Dordrecht : , : Springer Netherlands : , : Imprint : Springer, , 2016 |
| Descrizione fisica | 1 online resource (350 p.) |
| Disciplina | 530 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| ISBN | 94-024-0841-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Inorganic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Organic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Ferroelectric-gate Field Effect Transistors with flexible substrates -- Applications and Future Prospects. |
| Record Nr. | UNINA-9910254628103321 |
| Dordrecht : , : Springer Netherlands : , : Imprint : Springer, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||