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CVD of compound semiconductors [[electronic resource] ] : precursor synthesis, development and applications / / Anthony C. Jones, Paul O'Brien
| CVD of compound semiconductors [[electronic resource] ] : precursor synthesis, development and applications / / Anthony C. Jones, Paul O'Brien |
| Autore | Jones Anthony C |
| Pubbl/distr/stampa | Weinheim, Germany ; ; Cambridge, : VCH, c1997 |
| Descrizione fisica | 1 online resource (354 p.) |
| Disciplina |
621.38152
660.2977 |
| Altri autori (Persone) | O'BrienPaul, Ph.D. |
| Soggetto topico |
Compound semiconductors - Design and construction
Chemical vapor deposition |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-01047-6
9786612010477 3-527-61463-X 3-527-61462-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CVD of Compound Semiconductors; Contents; 1 Basic Concepts; 1.1 Introduction; 1.2 Compound Semiconductors; 1.3 Description of the Band Gap; 1.3.1 Density of States; 1.3.2 Extrinsic Semiconductors; 1.3.3 Characterizing Carrier Concentrations; 1.3.4 Direct and Indirect Band Gaps; 1.3.5 Photoluminescence Spectroscopy; 1.3.6 p-n Junctions; 1.4 General Structural Properties of Compound Semiconductors; 1.5 Applications of III-V Semiconductors; 1.5.1 Light Emitting Diodes; 1.5.2 Solid State Lasers; 1.6 Structural Properties and Applications of II-VI Semiconductors; 1.7 III-VI Semiconductors
1.8 Vapor Phase Techniques1.8.1 Methods of Crystal Growth; 1.8.2 Historical Perspective; 1.8.3 Basic Principles of MOVPE, CBE and ALE; 1.8.3.1 Metalorganic Vapor Phase Epitaxy (MOVPE); 1.8.3.2 Chemical Beam Epitaxy; 1.8.3.3 Photoassisted Processes; 1.8.3.4 Atomic Layer Epitaxy (ALE); 1.9 References; 2 Precursor Chemistry; 2.1 Introduction; 2.2 Group IIIA Metalorganic Precursors; 2.2.1 Aluminum Chemistry; 2.2.2 Gallium; 2.2.3 Indium; 2.2.4 Group III Metal Alkyl Adducts; 2.2.5 Metalorganic Precursor Purity; 2.3 Analysis Techniques; 2.3.1 Determination of Trace Metal Impurities 2.3.2 Determination of Organic Impurities2.3.3 Identification of Impurities in the Semiconductor Layer; 2.4 Purification of Group III Trialkyl Compounds; 2.4.1 Classical Purification Techniques; 2.4.2 Adduct Purification Techniques; 2.5 Group II Metalorganic Precursors; 2.5.1 Dialkylzinc Compounds; 2.5.2 Other Group II Metalorganic Precursors; 2.6 Purification of Group II Precursors; 2.6.1 Adduct Purification of Group II Metalorganic Precursors; 2.7 Compounds of Phosphorus, Arsenic and Antimony; 2.7.1 Alkylarsenic Compounds; 2.7.2 Alkyl Phosphorus Hydrides; 2.7.3 Alkylantimony Compounds 2.8 Group VI Metalorganic Precursors2.8.1 Compounds of Sulfur, Selenium, and Tellurium; 2.9 Thermal Stability of Metalorganic Precursors; 2.9.1 DSC Data for Group III Metalorganics; 2.9.2 Base-Free Trialkyls, R3M; 2.9.3 Adducts of Group III Trialkyls; 2.9.4 Precursors Containing an Al-Hydride Bond; 2.9.5 DSC Data for Group II Alkyls; 2.9.6 Conclusions; 2.10 References; 3 MOVPE of III-V Compounds; 3.1 Introduction; 3.2 Growth of Gallium Arsenide (GaAs); 3.2.1 Growth Using Conventional Precursors; 3.2.1.1 Me/Ga/AsH3; 3.2.1.2 Et/Ga/AsH3; 3.2.2 Growth of GaAs Using Alternative Ga Precursors 3.2.3 Growth of GaAs Using Alternative As Precursors3.2.3.1 Precursor Requirements; 3.2.3.2 Trialkylarsenic Precursors; 3.2.3.3 Alkylarsenic Hydride Precursors; 3.2.3.4 Alternative Arsenic Precursors Containing Other Functional Groups; 3.3 Growth of Aluminum Gallium Arsenide (AlGaAs); 3.3.1 Growth of AlGaAs Using Conventional Precursors; 3.3.1.1 Carbon Incorporation; 3.3.1.2 Oxygen Incorporation; 3.3.2 Growth of AlGaAs Using Alternative A1 Precursors; 3.3.2.1 AlGaAs Growth Using Methyl-Based Alternatives; 3.3.2.2 AlGaAs Growth Using Ethyl-Based Alternatives 3.3.2.3 AlGaAs Growth Using Higher Al Alkyls |
| Record Nr. | UNINA-9910144520703321 |
Jones Anthony C
|
||
| Weinheim, Germany ; ; Cambridge, : VCH, c1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
CVD of compound semiconductors [[electronic resource] ] : precursor synthesis, development and applications / / Anthony C. Jones, Paul O'Brien
| CVD of compound semiconductors [[electronic resource] ] : precursor synthesis, development and applications / / Anthony C. Jones, Paul O'Brien |
| Autore | Jones Anthony C |
| Pubbl/distr/stampa | Weinheim, Germany ; ; Cambridge, : VCH, c1997 |
| Descrizione fisica | 1 online resource (354 p.) |
| Disciplina |
621.38152
660.2977 |
| Altri autori (Persone) | O'BrienPaul, Ph.D. |
| Soggetto topico |
Compound semiconductors - Design and construction
Chemical vapor deposition |
| ISBN |
1-282-01047-6
9786612010477 3-527-61463-X 3-527-61462-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CVD of Compound Semiconductors; Contents; 1 Basic Concepts; 1.1 Introduction; 1.2 Compound Semiconductors; 1.3 Description of the Band Gap; 1.3.1 Density of States; 1.3.2 Extrinsic Semiconductors; 1.3.3 Characterizing Carrier Concentrations; 1.3.4 Direct and Indirect Band Gaps; 1.3.5 Photoluminescence Spectroscopy; 1.3.6 p-n Junctions; 1.4 General Structural Properties of Compound Semiconductors; 1.5 Applications of III-V Semiconductors; 1.5.1 Light Emitting Diodes; 1.5.2 Solid State Lasers; 1.6 Structural Properties and Applications of II-VI Semiconductors; 1.7 III-VI Semiconductors
1.8 Vapor Phase Techniques1.8.1 Methods of Crystal Growth; 1.8.2 Historical Perspective; 1.8.3 Basic Principles of MOVPE, CBE and ALE; 1.8.3.1 Metalorganic Vapor Phase Epitaxy (MOVPE); 1.8.3.2 Chemical Beam Epitaxy; 1.8.3.3 Photoassisted Processes; 1.8.3.4 Atomic Layer Epitaxy (ALE); 1.9 References; 2 Precursor Chemistry; 2.1 Introduction; 2.2 Group IIIA Metalorganic Precursors; 2.2.1 Aluminum Chemistry; 2.2.2 Gallium; 2.2.3 Indium; 2.2.4 Group III Metal Alkyl Adducts; 2.2.5 Metalorganic Precursor Purity; 2.3 Analysis Techniques; 2.3.1 Determination of Trace Metal Impurities 2.3.2 Determination of Organic Impurities2.3.3 Identification of Impurities in the Semiconductor Layer; 2.4 Purification of Group III Trialkyl Compounds; 2.4.1 Classical Purification Techniques; 2.4.2 Adduct Purification Techniques; 2.5 Group II Metalorganic Precursors; 2.5.1 Dialkylzinc Compounds; 2.5.2 Other Group II Metalorganic Precursors; 2.6 Purification of Group II Precursors; 2.6.1 Adduct Purification of Group II Metalorganic Precursors; 2.7 Compounds of Phosphorus, Arsenic and Antimony; 2.7.1 Alkylarsenic Compounds; 2.7.2 Alkyl Phosphorus Hydrides; 2.7.3 Alkylantimony Compounds 2.8 Group VI Metalorganic Precursors2.8.1 Compounds of Sulfur, Selenium, and Tellurium; 2.9 Thermal Stability of Metalorganic Precursors; 2.9.1 DSC Data for Group III Metalorganics; 2.9.2 Base-Free Trialkyls, R3M; 2.9.3 Adducts of Group III Trialkyls; 2.9.4 Precursors Containing an Al-Hydride Bond; 2.9.5 DSC Data for Group II Alkyls; 2.9.6 Conclusions; 2.10 References; 3 MOVPE of III-V Compounds; 3.1 Introduction; 3.2 Growth of Gallium Arsenide (GaAs); 3.2.1 Growth Using Conventional Precursors; 3.2.1.1 Me/Ga/AsH3; 3.2.1.2 Et/Ga/AsH3; 3.2.2 Growth of GaAs Using Alternative Ga Precursors 3.2.3 Growth of GaAs Using Alternative As Precursors3.2.3.1 Precursor Requirements; 3.2.3.2 Trialkylarsenic Precursors; 3.2.3.3 Alkylarsenic Hydride Precursors; 3.2.3.4 Alternative Arsenic Precursors Containing Other Functional Groups; 3.3 Growth of Aluminum Gallium Arsenide (AlGaAs); 3.3.1 Growth of AlGaAs Using Conventional Precursors; 3.3.1.1 Carbon Incorporation; 3.3.1.2 Oxygen Incorporation; 3.3.2 Growth of AlGaAs Using Alternative A1 Precursors; 3.3.2.1 AlGaAs Growth Using Methyl-Based Alternatives; 3.3.2.2 AlGaAs Growth Using Ethyl-Based Alternatives 3.3.2.3 AlGaAs Growth Using Higher Al Alkyls |
| Record Nr. | UNISA-996204149103316 |
|
Jones Anthony C
|
||
| Weinheim, Germany ; ; Cambridge, : VCH, c1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
CVD of compound semiconductors [[electronic resource] ] : precursor synthesis, development and applications / / Anthony C. Jones, Paul O'Brien
| CVD of compound semiconductors [[electronic resource] ] : precursor synthesis, development and applications / / Anthony C. Jones, Paul O'Brien |
| Autore | Jones Anthony C |
| Pubbl/distr/stampa | Weinheim, Germany ; ; Cambridge, : VCH, c1997 |
| Descrizione fisica | 1 online resource (354 p.) |
| Disciplina |
621.38152
660.2977 |
| Altri autori (Persone) | O'BrienPaul, Ph.D. |
| Soggetto topico |
Compound semiconductors - Design and construction
Chemical vapor deposition |
| ISBN |
1-282-01047-6
9786612010477 3-527-61463-X 3-527-61462-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CVD of Compound Semiconductors; Contents; 1 Basic Concepts; 1.1 Introduction; 1.2 Compound Semiconductors; 1.3 Description of the Band Gap; 1.3.1 Density of States; 1.3.2 Extrinsic Semiconductors; 1.3.3 Characterizing Carrier Concentrations; 1.3.4 Direct and Indirect Band Gaps; 1.3.5 Photoluminescence Spectroscopy; 1.3.6 p-n Junctions; 1.4 General Structural Properties of Compound Semiconductors; 1.5 Applications of III-V Semiconductors; 1.5.1 Light Emitting Diodes; 1.5.2 Solid State Lasers; 1.6 Structural Properties and Applications of II-VI Semiconductors; 1.7 III-VI Semiconductors
1.8 Vapor Phase Techniques1.8.1 Methods of Crystal Growth; 1.8.2 Historical Perspective; 1.8.3 Basic Principles of MOVPE, CBE and ALE; 1.8.3.1 Metalorganic Vapor Phase Epitaxy (MOVPE); 1.8.3.2 Chemical Beam Epitaxy; 1.8.3.3 Photoassisted Processes; 1.8.3.4 Atomic Layer Epitaxy (ALE); 1.9 References; 2 Precursor Chemistry; 2.1 Introduction; 2.2 Group IIIA Metalorganic Precursors; 2.2.1 Aluminum Chemistry; 2.2.2 Gallium; 2.2.3 Indium; 2.2.4 Group III Metal Alkyl Adducts; 2.2.5 Metalorganic Precursor Purity; 2.3 Analysis Techniques; 2.3.1 Determination of Trace Metal Impurities 2.3.2 Determination of Organic Impurities2.3.3 Identification of Impurities in the Semiconductor Layer; 2.4 Purification of Group III Trialkyl Compounds; 2.4.1 Classical Purification Techniques; 2.4.2 Adduct Purification Techniques; 2.5 Group II Metalorganic Precursors; 2.5.1 Dialkylzinc Compounds; 2.5.2 Other Group II Metalorganic Precursors; 2.6 Purification of Group II Precursors; 2.6.1 Adduct Purification of Group II Metalorganic Precursors; 2.7 Compounds of Phosphorus, Arsenic and Antimony; 2.7.1 Alkylarsenic Compounds; 2.7.2 Alkyl Phosphorus Hydrides; 2.7.3 Alkylantimony Compounds 2.8 Group VI Metalorganic Precursors2.8.1 Compounds of Sulfur, Selenium, and Tellurium; 2.9 Thermal Stability of Metalorganic Precursors; 2.9.1 DSC Data for Group III Metalorganics; 2.9.2 Base-Free Trialkyls, R3M; 2.9.3 Adducts of Group III Trialkyls; 2.9.4 Precursors Containing an Al-Hydride Bond; 2.9.5 DSC Data for Group II Alkyls; 2.9.6 Conclusions; 2.10 References; 3 MOVPE of III-V Compounds; 3.1 Introduction; 3.2 Growth of Gallium Arsenide (GaAs); 3.2.1 Growth Using Conventional Precursors; 3.2.1.1 Me/Ga/AsH3; 3.2.1.2 Et/Ga/AsH3; 3.2.2 Growth of GaAs Using Alternative Ga Precursors 3.2.3 Growth of GaAs Using Alternative As Precursors3.2.3.1 Precursor Requirements; 3.2.3.2 Trialkylarsenic Precursors; 3.2.3.3 Alkylarsenic Hydride Precursors; 3.2.3.4 Alternative Arsenic Precursors Containing Other Functional Groups; 3.3 Growth of Aluminum Gallium Arsenide (AlGaAs); 3.3.1 Growth of AlGaAs Using Conventional Precursors; 3.3.1.1 Carbon Incorporation; 3.3.1.2 Oxygen Incorporation; 3.3.2 Growth of AlGaAs Using Alternative A1 Precursors; 3.3.2.1 AlGaAs Growth Using Methyl-Based Alternatives; 3.3.2.2 AlGaAs Growth Using Ethyl-Based Alternatives 3.3.2.3 AlGaAs Growth Using Higher Al Alkyls |
| Record Nr. | UNINA-9910829985703321 |
|
Jones Anthony C
|
||
| Weinheim, Germany ; ; Cambridge, : VCH, c1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
CVD of compound semiconductors : precursor synthesis, development and applications / / Anthony C. Jones, Paul O'Brien
| CVD of compound semiconductors : precursor synthesis, development and applications / / Anthony C. Jones, Paul O'Brien |
| Autore | Jones Anthony C |
| Pubbl/distr/stampa | Weinheim, Germany ; ; Cambridge, : VCH, c1997 |
| Descrizione fisica | 1 online resource (354 p.) |
| Disciplina |
621.38152
660.2977 |
| Altri autori (Persone) | O'BrienPaul, Ph.D. |
| Soggetto topico |
Compound semiconductors - Design and construction
Chemical vapor deposition |
| ISBN |
1-282-01047-6
9786612010477 3-527-61463-X 3-527-61462-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CVD of Compound Semiconductors; Contents; 1 Basic Concepts; 1.1 Introduction; 1.2 Compound Semiconductors; 1.3 Description of the Band Gap; 1.3.1 Density of States; 1.3.2 Extrinsic Semiconductors; 1.3.3 Characterizing Carrier Concentrations; 1.3.4 Direct and Indirect Band Gaps; 1.3.5 Photoluminescence Spectroscopy; 1.3.6 p-n Junctions; 1.4 General Structural Properties of Compound Semiconductors; 1.5 Applications of III-V Semiconductors; 1.5.1 Light Emitting Diodes; 1.5.2 Solid State Lasers; 1.6 Structural Properties and Applications of II-VI Semiconductors; 1.7 III-VI Semiconductors
1.8 Vapor Phase Techniques1.8.1 Methods of Crystal Growth; 1.8.2 Historical Perspective; 1.8.3 Basic Principles of MOVPE, CBE and ALE; 1.8.3.1 Metalorganic Vapor Phase Epitaxy (MOVPE); 1.8.3.2 Chemical Beam Epitaxy; 1.8.3.3 Photoassisted Processes; 1.8.3.4 Atomic Layer Epitaxy (ALE); 1.9 References; 2 Precursor Chemistry; 2.1 Introduction; 2.2 Group IIIA Metalorganic Precursors; 2.2.1 Aluminum Chemistry; 2.2.2 Gallium; 2.2.3 Indium; 2.2.4 Group III Metal Alkyl Adducts; 2.2.5 Metalorganic Precursor Purity; 2.3 Analysis Techniques; 2.3.1 Determination of Trace Metal Impurities 2.3.2 Determination of Organic Impurities2.3.3 Identification of Impurities in the Semiconductor Layer; 2.4 Purification of Group III Trialkyl Compounds; 2.4.1 Classical Purification Techniques; 2.4.2 Adduct Purification Techniques; 2.5 Group II Metalorganic Precursors; 2.5.1 Dialkylzinc Compounds; 2.5.2 Other Group II Metalorganic Precursors; 2.6 Purification of Group II Precursors; 2.6.1 Adduct Purification of Group II Metalorganic Precursors; 2.7 Compounds of Phosphorus, Arsenic and Antimony; 2.7.1 Alkylarsenic Compounds; 2.7.2 Alkyl Phosphorus Hydrides; 2.7.3 Alkylantimony Compounds 2.8 Group VI Metalorganic Precursors2.8.1 Compounds of Sulfur, Selenium, and Tellurium; 2.9 Thermal Stability of Metalorganic Precursors; 2.9.1 DSC Data for Group III Metalorganics; 2.9.2 Base-Free Trialkyls, R3M; 2.9.3 Adducts of Group III Trialkyls; 2.9.4 Precursors Containing an Al-Hydride Bond; 2.9.5 DSC Data for Group II Alkyls; 2.9.6 Conclusions; 2.10 References; 3 MOVPE of III-V Compounds; 3.1 Introduction; 3.2 Growth of Gallium Arsenide (GaAs); 3.2.1 Growth Using Conventional Precursors; 3.2.1.1 Me/Ga/AsH3; 3.2.1.2 Et/Ga/AsH3; 3.2.2 Growth of GaAs Using Alternative Ga Precursors 3.2.3 Growth of GaAs Using Alternative As Precursors3.2.3.1 Precursor Requirements; 3.2.3.2 Trialkylarsenic Precursors; 3.2.3.3 Alkylarsenic Hydride Precursors; 3.2.3.4 Alternative Arsenic Precursors Containing Other Functional Groups; 3.3 Growth of Aluminum Gallium Arsenide (AlGaAs); 3.3.1 Growth of AlGaAs Using Conventional Precursors; 3.3.1.1 Carbon Incorporation; 3.3.1.2 Oxygen Incorporation; 3.3.2 Growth of AlGaAs Using Alternative A1 Precursors; 3.3.2.1 AlGaAs Growth Using Methyl-Based Alternatives; 3.3.2.2 AlGaAs Growth Using Ethyl-Based Alternatives 3.3.2.3 AlGaAs Growth Using Higher Al Alkyls |
| Record Nr. | UNINA-9910876989003321 |
|
Jones Anthony C
|
||
| Weinheim, Germany ; ; Cambridge, : VCH, c1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||