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A current source method for tq measurement of fast switching thyristors [[electronic resource] /] / Janis M. Niedra
A current source method for tq measurement of fast switching thyristors [[electronic resource] /] / Janis M. Niedra
Autore Niedra Janis M
Pubbl/distr/stampa Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Descrizione fisica 1 online resource (7 pages) : illustrations
Collana NASA/CR
Soggetto topico Pulse generators
Switching
Thyristors
Circuits
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Current source method for t[subscript q] measurement of fast switching thyristors
Record Nr. UNINA-9910699313503321
Niedra Janis M  
Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Fast turn-off times observed in experimental 4H SiC thyristors [[electronic resource] /] / Janis M. Niedra
Fast turn-off times observed in experimental 4H SiC thyristors [[electronic resource] /] / Janis M. Niedra
Autore Niedra Janis M
Pubbl/distr/stampa Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Descrizione fisica 1 online resource (6 pages) : illustrations
Collana NASA/CR-
Soggetto topico Thyristors
Electric potential
Circuits
Temperature measurement
Bypasses
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910699313603321
Niedra Janis M  
Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra
Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra
Autore Niedra Janis M
Pubbl/distr/stampa Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Descrizione fisica 1 online resource (11 pages) : illustrations
Collana NASA/CR
Soggetto topico Junction transistors
Temperature measurement
Bipolar transistors
Electric potential
Pulse amplitude
Thermal resistance
Silicon carbides
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910699314003321
Niedra Janis M  
Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C [[electronic resource] /] / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005
Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C [[electronic resource] /] / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005
Autore Niedra Janis M
Pubbl/distr/stampa Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2005]
Descrizione fisica 1 online resource (9 pages) : illustrations
Altri autori (Persone) SchwarzeGene E
Collana NASA/TM-
Soggetto topico Static characteristics
Silicon carbides
Transistors
Switching
Electric potential
P-n junctions
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910697164203321
Niedra Janis M  
Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2005]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C [[electronic resource] /] / Janis M. Niedra
Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C [[electronic resource] /] / Janis M. Niedra
Autore Niedra Janis M
Pubbl/distr/stampa Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Descrizione fisica 1 online resource (6 pages) : illustrations
Collana NASA/CR-
Soggetto topico Junction transistors
High temperature
Bipolar transistors
Switching
Static loads
Electric potential
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910699314303321
Niedra Janis M  
Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui