Autore	Nguyen Thien-Phap
Pubbl/distr/stampa	Newark : , : John Wiley & Sons, Incorporated, , 2023
Descrizione fisica	1 online resource (279 pages)
ISBN	1-394-22945-3 1-394-22943-7
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Cover -- Title Page -- Copyright Page -- Contents -- Abbreviations -- Introduction -- Chapter 1. Overview of Organic Semiconductors -- 1.1. Organic semiconductors -- 1.2. Doping of organic semiconductors -- 1.3. Organic electronic devices -- 1.3.1. Architectures of organic devices -- 1.3.2. Organic light-emitting diodes (OLEDs) -- 1.3.3. Organic solar cells (OSCs or OPVs) -- 1.3.4. Organic field-effect transistors (OFETs) -- Chapter 2. Defects in Materials -- 2.1. Order and disorder -- 2.2. Crystalline semiconductors -- 2.2.1. Localized states -- 2.2.2. Density of states (DOS) -- 2.3. Amorphous semiconductors -- 2.3.1. Localized states -- 2.3.2. Density of states (DOS) -- 2.4. Organic semiconductors -- 2.4.1. Polymer structure -- 2.4.2. Polymer crystallinity -- 2.4.3. Defects in conjugated polymers -- 2.4.4. Defects in small-molecule crystals -- 2.4.5. Localized states -- 2.4.6. Density of states -- 2.5. Distribution of the energetic states -- Chapter 3. Defects and Physical Properties of Semiconductors -- 3.1. Carrier transport in organic semiconductors -- 3.1.1. Hopping conduction -- 3.1.2. Uniform density of states model -- 3.1.3. Non-uniform density of states models -- 3.2. Effects of defects on the carrier transport -- 3.2.1. Traps and recombination centers -- 3.2.2. Trapping mechanisms and trap parameters -- 3.3. Optical properties of semiconductors and defects -- 3.3.1. Defects and absorption -- 3.3.2. Defects and luminescence -- Chapter 4. Techniques for Studying Defects in Semiconductors -- 4.1. Electron spin resonance (ESR) -- 4.1.1. Basic concepts of ESR -- 4.1.2. Interpretation of ESR line -- 4.1.3. Electron nuclear double resonance (ENDOR) -- 4.1.4. Investigation of defects using the ESR technique -- 4.2. Optical techniques -- 4.2.1. Fluorescence spectroscopy (FL) -- 4.2.2. Thermally stimulated luminescence (TSL) spectroscopy. 4.3. Electrical techniques -- 4.3.1. Thermally stimulated current (TSC) technique -- 4.3.2. Current-voltage measurements: space charge-limited current (SCLC) -- 4.3.3. Impedance spectroscopy (IS) -- 4.3.4. Deep-level transient spectroscopy (DLTS) -- 4.3.5. Time of flight (TOF) and charge carrier extraction by linearly increasing voltage (CELIV) techniques -- Chapter 5. Defect Origins -- 5.1. Defects in organic semiconductors -- 5.1.1. Structural defects -- 5.1.2. Impurity defects -- 5.2. Defects in organic devices -- 5.2.1. Defects from the semiconductor -- 5.2.2. Defects from the surface and the interface -- 5.2.3. Defects from diffused impurities -- Chapter 6. Defects, Performance and Reliability of Organic Devices -- 6.1. Impact of defects on the performance of organic devices -- 6.1.1. Defects and efficiency of OLEDs -- 6.1.2. Defects and efficiency of OPVs -- 6.1.3. Defects and performance of OFETs -- 6.2. Impact of defects on the stability of organic devices -- 6.2.1. Overview of degradation mechanisms in organic semiconductors and devices -- 6.2.2. Defects and degradation of organic semiconductor and devices -- Future Prospects -- References -- Index -- EULA.
Record Nr.	UNINA-9910830036703321

Autore	Nguyen Thien-Phap
Pubbl/distr/stampa	London : , : ISTE
Descrizione fisica	1 online resource (213 pages)
Disciplina	621.381
Collana	Electronics engineering series
Soggetto topico	Organic electronics
Soggetto genere / forma	Electronic books.
ISBN	1-5231-4365-7 1-119-81893-1 1-119-81894-X 1-119-81892-3
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Cover -- Half-Title Page -- Title Page -- Copyright Page -- Contents -- Introduction -- 1 Semiconductor Theory -- 1.1. Introduction -- 1.2. Review of the basic concepts of crystalline semiconductors -- 1.2.1. Intrinsic semiconductors -- 1.2.2. Extrinsic semiconductors -- 1.2.3. Fermi level -- 1.2.4. Charge transport in semiconductors -- 1.3. P-N junction -- 1.3.1. Space charge region -- 1.3.2. Junction capacitance -- 1.4. Impurities and defects -- 1.4.1. Traps and recombination centers -- 1.5. Metal/semiconductor contact -- 1.5.1. Parameters of metal/semiconductor contacts -- 1.5.2. Formation of metal/semiconductor contacts -- 1.5.3. Width Å of the space charge region -- 1.5.4. Junction capacitance -- 1.5.5. Schottky effect -- 1.5.6. Schottky diode -- 1.6. Semiconductors under non-equilibrium conditions -- 1.6.1. Parameters of a semiconductor under non-equilibrium conditions -- 1.6.2. Recombination of carriers via recombination centers (Shockley-Read-Hall theory) -- 1.6.3. Transient relaxation current -- 1.7. Space charge current -- 1.7.1. The case of an ideal semiconductor -- 1.7.2. Trap-filled limit voltage -- 1.7.3. Discrete traps and trap distribution -- 1.8. Hopping conduction -- 2 Materials -- 2.1. Introduction -- 2.2. Organic materials -- 2.2.1. Binding and hybridization of carbon -- 2.3. Conjugated polymers -- 2.3.1. Polyacetylene -- 2.3.2. Benzene -- 2.3.3. Deposition of polymer films -- 2.4. Energy bands -- 2.4.1. Concepts of solitons and polarons -- 2.4.2. Concept of doping -- 2.5. Small molecules -- 2.6. Design and engineering of organic materials -- 2.7. Hybrid materials or nanocomposites -- 2.7.1. Polymer matrix nanocomposites -- 2.7.2. Nanocomposites with nanomaterials -- 2.7.3. Preparation of nanocomposites -- 2.8. Transparent and conductive materials -- 2.8.1. Indium tin oxide -- 2.8.2. Fluorine-doped tin oxide. 2.8.3. Other transparent oxide conductors -- 2.8.4. Other transparent conductive materials -- 2.9. Materials for encapsulation -- 2.9.1. Glass slides -- 2.9.2. Hybrid multilayers -- 3 Optical Processes -- 3.1. Introduction -- 3.2. Interaction between light and molecules -- 3.2.1. Electronic transitions -- 3.2.2. Selection rules -- 3.3. Optical processes -- 3.3.1. Light absorption -- 3.3.2. Light emission -- 3.3.3. Perrin-Jablonski diagram -- 3.3.4. Quenching -- 3.4. Excitons -- 3.4.1. Classification of excitons -- 3.4.2. Binding energy of excitons -- 3.4.3. Movement of excitons -- 3.4.4. Dissociation of excitons -- 3.5. Experimental techniques -- 3.5.1. UV-visible absorption spectroscopy -- 3.5.2. Photoluminescence spectroscopy -- 3.5.3. Infrared and Raman spectroscopy -- 4 Electronic Processes -- 4.1. Introduction -- 4.2. Charge carrier injection process -- 4.2.1. Injection mechanisms -- 4.2.2. Hole or electron devices -- 4.2.3. Transport layers -- 4.3. Charge transport process -- 4.3.1. Hopping mechanisms -- 4.3.2. Space-charge limited conduction -- 4.3.3. Defects and traps in organic semiconductors -- 5 Interface Processes -- 5.1. Introduction -- 5.2. Formation of organic semiconductor/metal interfaces -- 5.2.1. Vacuum-level alignment model: Mott-Schottky theory -- 5.2.2. Interface dipole model: Bardeen's theory -- 5.2.3. Characteristics of organic semiconductor/metal interfaces -- 5.2.4. Fermi-level pinning -- 5.2.5. Integer charge transfer process -- 5.3. Surface characterization techniques -- 5.3.1. Atomic force microscopy -- 5.3.2. X-ray photoelectron spectroscopy -- 5.3.3. UV photoelectron spectroscopy -- 5.4. Interface engineering -- 5.4.1. Inverted structure devices -- 5.4.2. Self-assembled monolayers -- 5.5. Conclusion -- List of Acronyms -- General Terms -- Materials -- References -- Index. Other titles from iSTE in Electronics Engineering -- EULA.
Record Nr.	UNINA-9910555150703321

Autore	Nguyen Thien-Phap
Pubbl/distr/stampa	London : , : ISTE
Descrizione fisica	1 online resource (213 pages)
Disciplina	621.381
Collana	Electronics engineering series
Soggetto topico	Organic electronics
ISBN	1-5231-4365-7 1-119-81893-1 1-119-81894-X 1-119-81892-3
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Cover -- Half-Title Page -- Title Page -- Copyright Page -- Contents -- Introduction -- 1 Semiconductor Theory -- 1.1. Introduction -- 1.2. Review of the basic concepts of crystalline semiconductors -- 1.2.1. Intrinsic semiconductors -- 1.2.2. Extrinsic semiconductors -- 1.2.3. Fermi level -- 1.2.4. Charge transport in semiconductors -- 1.3. P-N junction -- 1.3.1. Space charge region -- 1.3.2. Junction capacitance -- 1.4. Impurities and defects -- 1.4.1. Traps and recombination centers -- 1.5. Metal/semiconductor contact -- 1.5.1. Parameters of metal/semiconductor contacts -- 1.5.2. Formation of metal/semiconductor contacts -- 1.5.3. Width Å of the space charge region -- 1.5.4. Junction capacitance -- 1.5.5. Schottky effect -- 1.5.6. Schottky diode -- 1.6. Semiconductors under non-equilibrium conditions -- 1.6.1. Parameters of a semiconductor under non-equilibrium conditions -- 1.6.2. Recombination of carriers via recombination centers (Shockley-Read-Hall theory) -- 1.6.3. Transient relaxation current -- 1.7. Space charge current -- 1.7.1. The case of an ideal semiconductor -- 1.7.2. Trap-filled limit voltage -- 1.7.3. Discrete traps and trap distribution -- 1.8. Hopping conduction -- 2 Materials -- 2.1. Introduction -- 2.2. Organic materials -- 2.2.1. Binding and hybridization of carbon -- 2.3. Conjugated polymers -- 2.3.1. Polyacetylene -- 2.3.2. Benzene -- 2.3.3. Deposition of polymer films -- 2.4. Energy bands -- 2.4.1. Concepts of solitons and polarons -- 2.4.2. Concept of doping -- 2.5. Small molecules -- 2.6. Design and engineering of organic materials -- 2.7. Hybrid materials or nanocomposites -- 2.7.1. Polymer matrix nanocomposites -- 2.7.2. Nanocomposites with nanomaterials -- 2.7.3. Preparation of nanocomposites -- 2.8. Transparent and conductive materials -- 2.8.1. Indium tin oxide -- 2.8.2. Fluorine-doped tin oxide. 2.8.3. Other transparent oxide conductors -- 2.8.4. Other transparent conductive materials -- 2.9. Materials for encapsulation -- 2.9.1. Glass slides -- 2.9.2. Hybrid multilayers -- 3 Optical Processes -- 3.1. Introduction -- 3.2. Interaction between light and molecules -- 3.2.1. Electronic transitions -- 3.2.2. Selection rules -- 3.3. Optical processes -- 3.3.1. Light absorption -- 3.3.2. Light emission -- 3.3.3. Perrin-Jablonski diagram -- 3.3.4. Quenching -- 3.4. Excitons -- 3.4.1. Classification of excitons -- 3.4.2. Binding energy of excitons -- 3.4.3. Movement of excitons -- 3.4.4. Dissociation of excitons -- 3.5. Experimental techniques -- 3.5.1. UV-visible absorption spectroscopy -- 3.5.2. Photoluminescence spectroscopy -- 3.5.3. Infrared and Raman spectroscopy -- 4 Electronic Processes -- 4.1. Introduction -- 4.2. Charge carrier injection process -- 4.2.1. Injection mechanisms -- 4.2.2. Hole or electron devices -- 4.2.3. Transport layers -- 4.3. Charge transport process -- 4.3.1. Hopping mechanisms -- 4.3.2. Space-charge limited conduction -- 4.3.3. Defects and traps in organic semiconductors -- 5 Interface Processes -- 5.1. Introduction -- 5.2. Formation of organic semiconductor/metal interfaces -- 5.2.1. Vacuum-level alignment model: Mott-Schottky theory -- 5.2.2. Interface dipole model: Bardeen's theory -- 5.2.3. Characteristics of organic semiconductor/metal interfaces -- 5.2.4. Fermi-level pinning -- 5.2.5. Integer charge transfer process -- 5.3. Surface characterization techniques -- 5.3.1. Atomic force microscopy -- 5.3.2. X-ray photoelectron spectroscopy -- 5.3.3. UV photoelectron spectroscopy -- 5.4. Interface engineering -- 5.4.1. Inverted structure devices -- 5.4.2. Self-assembled monolayers -- 5.5. Conclusion -- List of Acronyms -- General Terms -- Materials -- References -- Index. Other titles from iSTE in Electronics Engineering -- EULA.
Record Nr.	UNINA-9910677881803321

Autore	Nguyen Thien-Phap
Pubbl/distr/stampa	Hoboken, New Jersey : , : John Wiley and Sons, , [2021]
Descrizione fisica	1 online resource (224 p.)
Disciplina	621.381
Collana	Electronics engineering series (London, England)
Soggetto topico	Organic electronics Materials
Soggetto non controllato	Engineering Technology & Engineering
ISBN	9781119854876 1119854873
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Cover -- Half-Title Page -- Title Page -- Copyright Page -- Contents -- Introduction -- 1. Organic Light-Emitting Diodes -- 1.1. Introduction -- 1.2. Reminders on optics -- 1.2.1. Photometry and radiometry -- 1.2.2. Colors -- 1.3. OLED operating principle -- 1.3.1. P-N junction LED -- 1.3.2. OLEDs -- 1.4. OLED applications -- 1.4.1. OLEDs for lighting -- 1.4.2. OLEDs for display -- 1.4.3. OLEDs for automotive equipment -- 1.5. Conclusion -- 2. Organic Solar Cells -- 2.1. Introduction -- 2.2. Solar spectrum -- 2.3. Operating principle -- 2.3.1. Absorption of photons 2.3.2. Diffusion of excitons -- 2.3.3. Dissociation of excitons -- 2.3.4. Diffusion of carriers to electrodes -- 2.3.5. Collection of charges -- 2.3.6. Process optimization for an organic solar cell -- 2.4. Characteristic parameters of solar cells -- 2.4.1. Current-voltage characteristics -- 2.4.2. Photovoltaic parameters of a solar cell -- 2.4.3. Efficiency -- 2.5. Organic materials -- 2.5.1. Electron donor materials -- 2.5.2. Electron acceptor materials -- 2.6. P3HT:PCBM -- 2.7. Perovskite -- 2.7.1. Structure of perovskite -- 2.7.2. Solar cells based on perovskite 2.7.3. Conversion efficiency -- 2.7.4. Problems with the use of perovskite solar cells -- 2.8. Solar cells based on organic, hybrid and silicon materials -- 2.9. Strategies to improve the performance of organic and hybrid solar cells -- 2.9.1. Low bandgap semiconductors -- 2.9.2. Tandem cells -- 2.10. Conclusion -- 3. Organic Transistors -- 3.1. Introduction -- 3.2. Operating principle -- 3.2.1. Transistor effect -- 3.2.2. Field effect -- 3.3. Principal OFET parameters -- 3.3.1. Charge carrier mobility -- 3.3.2. Contact resistance -- 3.3.3. Hysteresis -- 3.3.4. Gate-bias stress effects, VGS 3.3.5. Ion/Ioff current ratio -- 3.4. Materials -- 3.4.1. Metals used for electrodes -- 3.4.2. Dielectric materials -- 3.4.3. Active organic materials -- 3.5. Ambipolar transistors and semiconductors -- 3.5.1. Ambipolar semiconductors -- 3.5.2. Ambipolar transistors -- 3.6. Light-emitting transistors -- 3.6.1. Ambipolar OLETs with BHJ structure -- 3.6.2. Single-semiconductor ambipolar OLETs -- 3.6.3. Vertical OLETs -- 3.7. OFET applications -- 3.7.1. RFID tags -- 3.7.2. Sensors -- 3.7.3. Active-matrix displays -- 3.8. Conclusion -- 4. The Brabec Triangle -- 4.1. Introduction 4.2. Device efficiency -- 4.2.1. OLED efficiency -- 4.2.2. Solar cell efficiency -- 4.2.3. OFET performance -- 4.3. Stability of materials and devices -- 4.3.1. Process of degradation of organic materials and devices -- 4.3.2. Classification of device degradation mechanisms -- 4.3.3. Degradation of OFETs -- 4.3.4. Measuring the lifetime of devices -- 4.4. Organic device production cost and marketing -- 4.4.1. Production of OLEDs -- 4.4.2. Production of OSCs -- 4.4.3. Production of OFETs -- 4.5. Synthesis on Brabec's criteria -- 4.6. Environmental dimension -- 4.6.1. Life-cycle assessment
Record Nr.	UNINA-9910677258803321

Autore	Nguyen Thien-Phap
Pubbl/distr/stampa	London : , : ISTE
Descrizione fisica	1 online resource (213 pages)
Disciplina	621.381
Collana	Electronics engineering series
Soggetto topico	Organic electronics
ISBN	1-5231-4365-7 1-119-81893-1 1-119-81894-X 1-119-81892-3
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Cover -- Half-Title Page -- Title Page -- Copyright Page -- Contents -- Introduction -- 1 Semiconductor Theory -- 1.1. Introduction -- 1.2. Review of the basic concepts of crystalline semiconductors -- 1.2.1. Intrinsic semiconductors -- 1.2.2. Extrinsic semiconductors -- 1.2.3. Fermi level -- 1.2.4. Charge transport in semiconductors -- 1.3. P-N junction -- 1.3.1. Space charge region -- 1.3.2. Junction capacitance -- 1.4. Impurities and defects -- 1.4.1. Traps and recombination centers -- 1.5. Metal/semiconductor contact -- 1.5.1. Parameters of metal/semiconductor contacts -- 1.5.2. Formation of metal/semiconductor contacts -- 1.5.3. Width Å of the space charge region -- 1.5.4. Junction capacitance -- 1.5.5. Schottky effect -- 1.5.6. Schottky diode -- 1.6. Semiconductors under non-equilibrium conditions -- 1.6.1. Parameters of a semiconductor under non-equilibrium conditions -- 1.6.2. Recombination of carriers via recombination centers (Shockley-Read-Hall theory) -- 1.6.3. Transient relaxation current -- 1.7. Space charge current -- 1.7.1. The case of an ideal semiconductor -- 1.7.2. Trap-filled limit voltage -- 1.7.3. Discrete traps and trap distribution -- 1.8. Hopping conduction -- 2 Materials -- 2.1. Introduction -- 2.2. Organic materials -- 2.2.1. Binding and hybridization of carbon -- 2.3. Conjugated polymers -- 2.3.1. Polyacetylene -- 2.3.2. Benzene -- 2.3.3. Deposition of polymer films -- 2.4. Energy bands -- 2.4.1. Concepts of solitons and polarons -- 2.4.2. Concept of doping -- 2.5. Small molecules -- 2.6. Design and engineering of organic materials -- 2.7. Hybrid materials or nanocomposites -- 2.7.1. Polymer matrix nanocomposites -- 2.7.2. Nanocomposites with nanomaterials -- 2.7.3. Preparation of nanocomposites -- 2.8. Transparent and conductive materials -- 2.8.1. Indium tin oxide -- 2.8.2. Fluorine-doped tin oxide. 2.8.3. Other transparent oxide conductors -- 2.8.4. Other transparent conductive materials -- 2.9. Materials for encapsulation -- 2.9.1. Glass slides -- 2.9.2. Hybrid multilayers -- 3 Optical Processes -- 3.1. Introduction -- 3.2. Interaction between light and molecules -- 3.2.1. Electronic transitions -- 3.2.2. Selection rules -- 3.3. Optical processes -- 3.3.1. Light absorption -- 3.3.2. Light emission -- 3.3.3. Perrin-Jablonski diagram -- 3.3.4. Quenching -- 3.4. Excitons -- 3.4.1. Classification of excitons -- 3.4.2. Binding energy of excitons -- 3.4.3. Movement of excitons -- 3.4.4. Dissociation of excitons -- 3.5. Experimental techniques -- 3.5.1. UV-visible absorption spectroscopy -- 3.5.2. Photoluminescence spectroscopy -- 3.5.3. Infrared and Raman spectroscopy -- 4 Electronic Processes -- 4.1. Introduction -- 4.2. Charge carrier injection process -- 4.2.1. Injection mechanisms -- 4.2.2. Hole or electron devices -- 4.2.3. Transport layers -- 4.3. Charge transport process -- 4.3.1. Hopping mechanisms -- 4.3.2. Space-charge limited conduction -- 4.3.3. Defects and traps in organic semiconductors -- 5 Interface Processes -- 5.1. Introduction -- 5.2. Formation of organic semiconductor/metal interfaces -- 5.2.1. Vacuum-level alignment model: Mott-Schottky theory -- 5.2.2. Interface dipole model: Bardeen's theory -- 5.2.3. Characteristics of organic semiconductor/metal interfaces -- 5.2.4. Fermi-level pinning -- 5.2.5. Integer charge transfer process -- 5.3. Surface characterization techniques -- 5.3.1. Atomic force microscopy -- 5.3.2. X-ray photoelectron spectroscopy -- 5.3.3. UV photoelectron spectroscopy -- 5.4. Interface engineering -- 5.4.1. Inverted structure devices -- 5.4.2. Self-assembled monolayers -- 5.5. Conclusion -- List of Acronyms -- General Terms -- Materials -- References -- Index. Other titles from iSTE in Electronics Engineering -- EULA.
Record Nr.	UNINA-9910808202703321