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Physics and applications of CVD diamond / / Satoshi Koizumi, Christoph Nebel, and Milos Nesladek
| Physics and applications of CVD diamond / / Satoshi Koizumi, Christoph Nebel, and Milos Nesladek |
| Autore | Koizumi Satoshi |
| Pubbl/distr/stampa | Weinheim, Germany : , : WILEY-VCH Verlag GmbH & Co. KGaA, , 2008 |
| Descrizione fisica | 1 online resource (376 p.) |
| Disciplina | 621.38152 |
| Soggetto topico |
Chemical vapor deposition
Diamonds, Artificial |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-94715-6
9786611947156 3-527-62317-5 3-527-62318-3 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Physics and Applications of CVD Diamond; Contents; Preface; 1 Future Perspectives for Diamond; 1.1 The Status Diamond and the Working Diamond; 1.2 On Diamond's Future; 1.3 The Electron in Carbon Country; 1.4 Social Contexts: Twenty-First Century Needs; 1.5 The Biomedical and Life Sciences Context; 1.6 Fusion: Opportunity and Challenge; 1.7 Extending the Information Technologies; 1.8 Can the Quantum be Tamed?; 1.9 Conclusions: Beyond Those Niche Applications; 2 Growth and Properties of Nanocrystalline Diamond Films; 2.1 Introduction; 2.2 Growth; 2.3 Raman Spectra of NCD and UNCD Films
2.4 Optical Properties of UNCD and B-NCD Films2.5 Doping and Transport Measurements; 2.6 Conclusions; 3 Chemical Vapor Deposition of Homoepitaxial Diamond Films; 3.1 Introduction and Historical Background; 3.1.1 Diamond - A Superior Semiconducting Material; 3.1.2 Low-Pressure Chemical Vapor Deposition; 3.1.3 Homoepitaxial Diamond Films; 3.2 Effects of Process Parameters on Homoepitaxial Diamond Film Quality; 3.2.1 Methane Concentration; 3.2.2 Substrate Temperature; 3.2.3 Total Gas Pressure; 3.2.4 Crystal Orientation; 3.2.5 Misorientation Angle; 3.2.6 Substrate Quality and Preparation Method 3.2.7 Impurity Doping into Homoepitaxial Diamond3.3 Homoepitaxial Diamond Growth by High-Power Microwave-Assisted Chemical Vapor Deposition; 3.3.1 Growth Conditions; 3.3.2 Growth Rate; 3.3.3 Surface Morphology; 3.3.4 Optical Properties; 3.3.5 Boron Doping; 3.3.6 Nitrogen Doping; 3.3.7 Large Area Deposition; 3.4 Conclusions and Perspectives; 4 Heteroepitaxy of Diamond; 4.1 Cubic Boron Nitride; 4.2 Silicon and Silicon Carbide; 4.3 Nickel and Cobalt; 4.4 Platinum; 4.5 Iridium; 4.6 Recent Progress in Heteroepitaxy of Diamond on Iridium; 4.7 Other Trials for Heteroepitaxy of Diamond; 4.8 Summary 5 Electrochemical Properties of Undoped Diamond5.1 Introduction; 5.2 Surface Electronic Properties of Diamond Covered with Adsorbates; 5.2.1 Contact Potential Difference (CPD) Experiments; 5.2.2 Current-Voltage (IV) Properties; 5.2.3 Capacitance-Voltage (CV) Experiments; 5.2.4 Two Dimensional Properties of a Perfectly H-Terminated Diamond Surface; 5.2.5 In-Plane Capacitance-Voltage Properties of Al on H-Terminated Diamond; 5.2.6 Hole Carrier Propagation and Scattering in the Surface Layer; 5.3 Surface Electronic Properties of Diamond in Electrolyte Solutions 5.3.1 Redox Couple Interactions with Undoped H-Terminated CVD Diamond5.3.2 Electrochemical Exchange Reactions of H-Terminated Diamond with Electrolytes and Redox Couples; 5.3.3 Ion Sensitive Field Effect Transistor (ISFET) from Undoped CVD Diamond; 5.4 Discussion and Conclusions; 5.5 Summary; 6 Biosensors from Diamond; 6.1 Introduction; 6.2 Materials and Methods; 6.2.1 CVD Diamond Growth, Surface Modifications and Contact Deposition; 6.2.2 Photochemical Surface Modification of Undoped Diamond; 6.2.3 Electrochemical Surface Functionalization 6.2.4 HeteroBifunctional CrossLinking and DNA Attachment |
| Record Nr. | UNINA-9910144120403321 |
Koizumi Satoshi
|
||
| Weinheim, Germany : , : WILEY-VCH Verlag GmbH & Co. KGaA, , 2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physics and applications of CVD diamond / / Satoshi Koizumi, Christoph Nebel, and Milos Nesladek
| Physics and applications of CVD diamond / / Satoshi Koizumi, Christoph Nebel, and Milos Nesladek |
| Autore | Koizumi Satoshi |
| Pubbl/distr/stampa | Weinheim, Germany : , : WILEY-VCH Verlag GmbH & Co. KGaA, , 2008 |
| Descrizione fisica | 1 online resource (376 p.) |
| Disciplina | 621.38152 |
| Soggetto topico |
Chemical vapor deposition
Diamonds, Artificial |
| ISBN |
1-281-94715-6
9786611947156 3-527-62317-5 3-527-62318-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Physics and Applications of CVD Diamond; Contents; Preface; 1 Future Perspectives for Diamond; 1.1 The Status Diamond and the Working Diamond; 1.2 On Diamond's Future; 1.3 The Electron in Carbon Country; 1.4 Social Contexts: Twenty-First Century Needs; 1.5 The Biomedical and Life Sciences Context; 1.6 Fusion: Opportunity and Challenge; 1.7 Extending the Information Technologies; 1.8 Can the Quantum be Tamed?; 1.9 Conclusions: Beyond Those Niche Applications; 2 Growth and Properties of Nanocrystalline Diamond Films; 2.1 Introduction; 2.2 Growth; 2.3 Raman Spectra of NCD and UNCD Films
2.4 Optical Properties of UNCD and B-NCD Films2.5 Doping and Transport Measurements; 2.6 Conclusions; 3 Chemical Vapor Deposition of Homoepitaxial Diamond Films; 3.1 Introduction and Historical Background; 3.1.1 Diamond - A Superior Semiconducting Material; 3.1.2 Low-Pressure Chemical Vapor Deposition; 3.1.3 Homoepitaxial Diamond Films; 3.2 Effects of Process Parameters on Homoepitaxial Diamond Film Quality; 3.2.1 Methane Concentration; 3.2.2 Substrate Temperature; 3.2.3 Total Gas Pressure; 3.2.4 Crystal Orientation; 3.2.5 Misorientation Angle; 3.2.6 Substrate Quality and Preparation Method 3.2.7 Impurity Doping into Homoepitaxial Diamond3.3 Homoepitaxial Diamond Growth by High-Power Microwave-Assisted Chemical Vapor Deposition; 3.3.1 Growth Conditions; 3.3.2 Growth Rate; 3.3.3 Surface Morphology; 3.3.4 Optical Properties; 3.3.5 Boron Doping; 3.3.6 Nitrogen Doping; 3.3.7 Large Area Deposition; 3.4 Conclusions and Perspectives; 4 Heteroepitaxy of Diamond; 4.1 Cubic Boron Nitride; 4.2 Silicon and Silicon Carbide; 4.3 Nickel and Cobalt; 4.4 Platinum; 4.5 Iridium; 4.6 Recent Progress in Heteroepitaxy of Diamond on Iridium; 4.7 Other Trials for Heteroepitaxy of Diamond; 4.8 Summary 5 Electrochemical Properties of Undoped Diamond5.1 Introduction; 5.2 Surface Electronic Properties of Diamond Covered with Adsorbates; 5.2.1 Contact Potential Difference (CPD) Experiments; 5.2.2 Current-Voltage (IV) Properties; 5.2.3 Capacitance-Voltage (CV) Experiments; 5.2.4 Two Dimensional Properties of a Perfectly H-Terminated Diamond Surface; 5.2.5 In-Plane Capacitance-Voltage Properties of Al on H-Terminated Diamond; 5.2.6 Hole Carrier Propagation and Scattering in the Surface Layer; 5.3 Surface Electronic Properties of Diamond in Electrolyte Solutions 5.3.1 Redox Couple Interactions with Undoped H-Terminated CVD Diamond5.3.2 Electrochemical Exchange Reactions of H-Terminated Diamond with Electrolytes and Redox Couples; 5.3.3 Ion Sensitive Field Effect Transistor (ISFET) from Undoped CVD Diamond; 5.4 Discussion and Conclusions; 5.5 Summary; 6 Biosensors from Diamond; 6.1 Introduction; 6.2 Materials and Methods; 6.2.1 CVD Diamond Growth, Surface Modifications and Contact Deposition; 6.2.2 Photochemical Surface Modification of Undoped Diamond; 6.2.3 Electrochemical Surface Functionalization 6.2.4 HeteroBifunctional CrossLinking and DNA Attachment |
| Record Nr. | UNINA-9910830977703321 |
|
Koizumi Satoshi
|
||
| Weinheim, Germany : , : WILEY-VCH Verlag GmbH & Co. KGaA, , 2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||