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Functional nanomaterials and devices VII : selected, peer reviewed papers from the 7th International Workshop on Functional Nanomaterials and Devices, April 8-11, 2013, Kyiv, Ukraine / / edited by Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre
| Functional nanomaterials and devices VII : selected, peer reviewed papers from the 7th International Workshop on Functional Nanomaterials and Devices, April 8-11, 2013, Kyiv, Ukraine / / edited by Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre |
| Pubbl/distr/stampa | Durntech-Zurich, Switzerland : , : Trans Tech Publications, , [2014] |
| Descrizione fisica | 1 online resource (161 p.) |
| Disciplina | 620.115 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
LysenkoVolodymyr S FlandreDenis |
| Collana | Advanced materials research |
| Soggetto topico |
Nanostructured materials
Nanotechnology |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03826-323-0 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Functional Nanomaterials and Devices VII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Nanoscale SOI Structures, Devices and Sensors; An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO2 Interface; Transport and Photoelectric Effects in Structures with Ge and SiGe Nanoclusters Grown on Oxidized Si (001); Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures; Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films
On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETsHigh Sensitive Active MOS Photo Detector on the Local 3D SOI-Structure; Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors; Chapter 2: New Functional Nanomaterials, Nanoscaled Devices for Electronics, Energy Harvesting, Light Emission, and Lighting; Carbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron Emission Characteristics of Hydrogen Effusion from the Si-H Bonds in Si Rich Silicon Oxynitride Films for Nanocrystalline Silicon Based Photovoltaic ApplicationsHybrid Solar Cells Based on CdS Nanowire Arrays; Formation of Ordered Si Nanowires Arrays on Si Substrate; Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates; Chapter 3: Diagnostics of the Functional Nanomaterials and Devices; Magnetic Resonance and Optical Study of Carbonized Silica Obtained by Pyrolysis of Surface Compounds Electrical Properties of Composite Films with Silicon Nanocrystals in the Insulating MatrixPositron Annihilation Lifetime Spectroscopy Measurement of Ge5As37S58 Glass; Comparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron Sputtering; Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity; Low Dislocation Density and High Mobility GaN Layers for DHFET Channels Grown on High-Temperature AlN/AlGaN Buffer Layer by Ammonia MBE Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in SiliconChapter 4: Functional Nanomaterials for Medicine; Nanoparticles in Antivirus Therapy; Application of Oxidized Silicon Nanowires for Nerve Fibers Regeneration; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910465157303321 |
| Durntech-Zurich, Switzerland : , : Trans Tech Publications, , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Functional nanomaterials and devices VII : selected, peer reviewed papers from the 7th International Workshop on Functional Nanomaterials and Devices, April 8-11, 2013, Kyiv, Ukraine / / edited by Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre
| Functional nanomaterials and devices VII : selected, peer reviewed papers from the 7th International Workshop on Functional Nanomaterials and Devices, April 8-11, 2013, Kyiv, Ukraine / / edited by Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre |
| Pubbl/distr/stampa | Durntech-Zurich, Switzerland : , : Trans Tech Publications, , [2014] |
| Descrizione fisica | 1 online resource (161 p.) |
| Disciplina | 620.115 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
LysenkoVolodymyr S FlandreDenis |
| Collana | Advanced materials research |
| Soggetto topico |
Nanostructured materials
Nanotechnology |
| ISBN | 3-03826-323-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Functional Nanomaterials and Devices VII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Nanoscale SOI Structures, Devices and Sensors; An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO2 Interface; Transport and Photoelectric Effects in Structures with Ge and SiGe Nanoclusters Grown on Oxidized Si (001); Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures; Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films
On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETsHigh Sensitive Active MOS Photo Detector on the Local 3D SOI-Structure; Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors; Chapter 2: New Functional Nanomaterials, Nanoscaled Devices for Electronics, Energy Harvesting, Light Emission, and Lighting; Carbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron Emission Characteristics of Hydrogen Effusion from the Si-H Bonds in Si Rich Silicon Oxynitride Films for Nanocrystalline Silicon Based Photovoltaic ApplicationsHybrid Solar Cells Based on CdS Nanowire Arrays; Formation of Ordered Si Nanowires Arrays on Si Substrate; Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates; Chapter 3: Diagnostics of the Functional Nanomaterials and Devices; Magnetic Resonance and Optical Study of Carbonized Silica Obtained by Pyrolysis of Surface Compounds Electrical Properties of Composite Films with Silicon Nanocrystals in the Insulating MatrixPositron Annihilation Lifetime Spectroscopy Measurement of Ge5As37S58 Glass; Comparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron Sputtering; Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity; Low Dislocation Density and High Mobility GaN Layers for DHFET Channels Grown on High-Temperature AlN/AlGaN Buffer Layer by Ammonia MBE Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in SiliconChapter 4: Functional Nanomaterials for Medicine; Nanoparticles in Antivirus Therapy; Application of Oxidized Silicon Nanowires for Nerve Fibers Regeneration; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910789172903321 |
| Durntech-Zurich, Switzerland : , : Trans Tech Publications, , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Functional nanomaterials and devices VII : selected, peer reviewed papers from the 7th International Workshop on Functional Nanomaterials and Devices, April 8-11, 2013, Kyiv, Ukraine / / edited by Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre
| Functional nanomaterials and devices VII : selected, peer reviewed papers from the 7th International Workshop on Functional Nanomaterials and Devices, April 8-11, 2013, Kyiv, Ukraine / / edited by Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre |
| Pubbl/distr/stampa | Durntech-Zurich, Switzerland : , : Trans Tech Publications, , [2014] |
| Descrizione fisica | 1 online resource (161 p.) |
| Disciplina | 620.115 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
LysenkoVolodymyr S FlandreDenis |
| Collana | Advanced materials research |
| Soggetto topico |
Nanostructured materials
Nanotechnology |
| ISBN | 3-03826-323-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Functional Nanomaterials and Devices VII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Nanoscale SOI Structures, Devices and Sensors; An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO2 Interface; Transport and Photoelectric Effects in Structures with Ge and SiGe Nanoclusters Grown on Oxidized Si (001); Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures; Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films
On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETsHigh Sensitive Active MOS Photo Detector on the Local 3D SOI-Structure; Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors; Chapter 2: New Functional Nanomaterials, Nanoscaled Devices for Electronics, Energy Harvesting, Light Emission, and Lighting; Carbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron Emission Characteristics of Hydrogen Effusion from the Si-H Bonds in Si Rich Silicon Oxynitride Films for Nanocrystalline Silicon Based Photovoltaic ApplicationsHybrid Solar Cells Based on CdS Nanowire Arrays; Formation of Ordered Si Nanowires Arrays on Si Substrate; Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates; Chapter 3: Diagnostics of the Functional Nanomaterials and Devices; Magnetic Resonance and Optical Study of Carbonized Silica Obtained by Pyrolysis of Surface Compounds Electrical Properties of Composite Films with Silicon Nanocrystals in the Insulating MatrixPositron Annihilation Lifetime Spectroscopy Measurement of Ge5As37S58 Glass; Comparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron Sputtering; Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity; Low Dislocation Density and High Mobility GaN Layers for DHFET Channels Grown on High-Temperature AlN/AlGaN Buffer Layer by Ammonia MBE Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in SiliconChapter 4: Functional Nanomaterials for Medicine; Nanoparticles in Antivirus Therapy; Application of Oxidized Silicon Nanowires for Nerve Fibers Regeneration; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910813132103321 |
| Durntech-Zurich, Switzerland : , : Trans Tech Publications, , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin
| Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] |
| Descrizione fisica | 1 online resource (199 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
RaskinJ.-P <1971-> (Jean-Pierre) |
| Collana | Advanced materials research |
| Soggetto topico |
Semiconductors
Silicon-on-insulator technology Nanoelectromechanical systems Nanotechnology |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03813-615-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910462517203321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin
| Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] |
| Descrizione fisica | 1 online resource (199 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
RaskinJ.-P <1971-> (Jean-Pierre) |
| Collana | Advanced materials research |
| Soggetto topico |
Semiconductors
Silicon-on-insulator technology Nanoelectromechanical systems Nanotechnology |
| Soggetto non controllato |
Nanoscaled
Semiconductor-on-insulator Sensors Insulator |
| ISBN | 3-03813-615-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910790325403321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin
| Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] |
| Descrizione fisica | 1 online resource (199 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
RaskinJ.-P <1971-> (Jean-Pierre) |
| Collana | Advanced materials research |
| Soggetto topico |
Semiconductors
Silicon-on-insulator technology Nanoelectromechanical systems Nanotechnology |
| Soggetto non controllato |
Nanoscaled
Semiconductor-on-insulator Sensors Insulator |
| ISBN | 3-03813-615-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910822644703321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||