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LEDs for lighting applications [[electronic resource] /] / edited by Patrick Mottier
| LEDs for lighting applications [[electronic resource] /] / edited by Patrick Mottier |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (298 p.) |
| Disciplina |
621.3815/22
621.381522 |
| Altri autori (Persone) | MottierPatrick |
| Collana | ISTE |
| Soggetto topico |
Light emitting diodes
Electric lighting - Equipment and supplies |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-68721-2
9786612687211 1-118-21168-5 0-470-61201-0 0-470-61029-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
LEDs for Lighting Applications; Table of Contents; Foreword; Introduction; Chapter 1. Light-Emitting Diodes: Principles and Challenges; 1.1. History of a revolution in the world of the light sources; 1.2. LEDs and lighting; 1.3. Principle of operation, color, efficiency, lifetime and quality of LEDs; 1.3.1. White light production from LEDS: principles and challenges; 1.3.2. Lifetime; 1.3.3. Quality of LEDs; 1.4. Challenges facing LEDs; 1.5. Bibliography; Chapter 2. Substrates for III-Nitride-based Electroluminescent Diodes; 2.1. Introduction
2.2. Crystal structure and epitaxial relation with 6H-SiC and Al2O32.3. Defects and constraints due to heteroepitaxy; 2.3.1. Dislocations; 2.3.2. Disorientation of the substrate; 2.3.3. Epitaxial stress; 2.3.4. Thermal stress; 2.4. MOVPE growth of GaN on sapphire; 2.4.1. GaN growth; 2.4.2. Standard 2D epitaxy; 2.4.3. 3D epitaxial growth; 2.4.4. Epitaxial lateral overgrow (ELO 1S); 2.4.5. Anisotropic growth; 2.4.6. Two stage ELO GaN growth (ELO 2S); 2.4.7. GaN growth using pendeo-epitaxy; 2.4.8. Nano epitaxy; 2.5. Bulk nitride substrates 2.5.1. HNPS (high nitrogen pressure solution method) for the fabrication of crystalline GaN2.5.2. Ammonothermal synthesis of GaN; 2.5.3. Halide vapor phase epitaxy (HVPE) of GaN; 2.6. Conclusion; 2.7. Bibliography; Chapter 3. III-Nitride High-Brightness Light-Emitting Diodes; 3.1. Introduction; 3.2. p-n junction in GaN; 3.3. Active region: InGaN/GaN quantum well; 3.3.1. Growth and structure; 3.3.2. Optical properties; 3.4. Radiative efficiency; 3.5. Conclusion and prospects; 3.6. Bibliography; Chapter 4. Diode Processing; 4.1. Introduction; 4.2. Orders of magnitude; 4.3. Diode configurations 4.3.1. Conventional chip (CC)4.3.2. Flip chip (FC); 4.3.3. Vertical thin film (VTF); 4.3.4. Thin film flip chip (TFFC); 4.4. Light extraction at wafer level; 4.5. Diode processing, etching, contact deposition; 4.5.1. N-type contacts; 4.5.2. P-type contacts; 4.6. Etching; 4.7. Substrate removal; 4.8. Potential evolutions; 4.9. Bibliography; Chapter 5. Packaging; 5.1. Introduction; 5.2. Different packaging processes; 5.2.1. Historical background; 5.2.2. From the wafer to the chip; 5.2.3. Components with connection pins; 5.2.4. SMT leadform components; 5.2.5. SMT "leadless" components 5.2.6. Other technologies5.2.7. Conclusion; 5.3. Thermal management; 5.3.1. Motivations; 5.3.2. Heat dissipation modes; 5.3.3. Thermal dissipation in LEDs; 5.3.4. Comparison of different packaging processes; 5.3.5. Conclusion; 5.4. Light extraction in LEDs; 5.4.1. Lateral light extraction in LEDs; 5.4.2. Vertical light extraction through a lens; 5.4.3. Lens/encapsulant materials; 5.4.4. Lenses and encapsulant implementation; 5.5. LED component characteristics; 5.5.1. Thermal and electrical characteristics; 5.5.2. Optical characteristics; 5.5.3. Binning; 5.5.4. Reliability 5.6. Conclusion and trends |
| Record Nr. | UNINA-9910139494603321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
LEDs for lighting applications [[electronic resource] /] / edited by Patrick Mottier
| LEDs for lighting applications [[electronic resource] /] / edited by Patrick Mottier |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (298 p.) |
| Disciplina |
621.3815/22
621.381522 |
| Altri autori (Persone) | MottierPatrick |
| Collana | ISTE |
| Soggetto topico |
Light emitting diodes
Electric lighting - Equipment and supplies |
| ISBN |
1-282-68721-2
9786612687211 1-118-21168-5 0-470-61201-0 0-470-61029-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
LEDs for Lighting Applications; Table of Contents; Foreword; Introduction; Chapter 1. Light-Emitting Diodes: Principles and Challenges; 1.1. History of a revolution in the world of the light sources; 1.2. LEDs and lighting; 1.3. Principle of operation, color, efficiency, lifetime and quality of LEDs; 1.3.1. White light production from LEDS: principles and challenges; 1.3.2. Lifetime; 1.3.3. Quality of LEDs; 1.4. Challenges facing LEDs; 1.5. Bibliography; Chapter 2. Substrates for III-Nitride-based Electroluminescent Diodes; 2.1. Introduction
2.2. Crystal structure and epitaxial relation with 6H-SiC and Al2O32.3. Defects and constraints due to heteroepitaxy; 2.3.1. Dislocations; 2.3.2. Disorientation of the substrate; 2.3.3. Epitaxial stress; 2.3.4. Thermal stress; 2.4. MOVPE growth of GaN on sapphire; 2.4.1. GaN growth; 2.4.2. Standard 2D epitaxy; 2.4.3. 3D epitaxial growth; 2.4.4. Epitaxial lateral overgrow (ELO 1S); 2.4.5. Anisotropic growth; 2.4.6. Two stage ELO GaN growth (ELO 2S); 2.4.7. GaN growth using pendeo-epitaxy; 2.4.8. Nano epitaxy; 2.5. Bulk nitride substrates 2.5.1. HNPS (high nitrogen pressure solution method) for the fabrication of crystalline GaN2.5.2. Ammonothermal synthesis of GaN; 2.5.3. Halide vapor phase epitaxy (HVPE) of GaN; 2.6. Conclusion; 2.7. Bibliography; Chapter 3. III-Nitride High-Brightness Light-Emitting Diodes; 3.1. Introduction; 3.2. p-n junction in GaN; 3.3. Active region: InGaN/GaN quantum well; 3.3.1. Growth and structure; 3.3.2. Optical properties; 3.4. Radiative efficiency; 3.5. Conclusion and prospects; 3.6. Bibliography; Chapter 4. Diode Processing; 4.1. Introduction; 4.2. Orders of magnitude; 4.3. Diode configurations 4.3.1. Conventional chip (CC)4.3.2. Flip chip (FC); 4.3.3. Vertical thin film (VTF); 4.3.4. Thin film flip chip (TFFC); 4.4. Light extraction at wafer level; 4.5. Diode processing, etching, contact deposition; 4.5.1. N-type contacts; 4.5.2. P-type contacts; 4.6. Etching; 4.7. Substrate removal; 4.8. Potential evolutions; 4.9. Bibliography; Chapter 5. Packaging; 5.1. Introduction; 5.2. Different packaging processes; 5.2.1. Historical background; 5.2.2. From the wafer to the chip; 5.2.3. Components with connection pins; 5.2.4. SMT leadform components; 5.2.5. SMT "leadless" components 5.2.6. Other technologies5.2.7. Conclusion; 5.3. Thermal management; 5.3.1. Motivations; 5.3.2. Heat dissipation modes; 5.3.3. Thermal dissipation in LEDs; 5.3.4. Comparison of different packaging processes; 5.3.5. Conclusion; 5.4. Light extraction in LEDs; 5.4.1. Lateral light extraction in LEDs; 5.4.2. Vertical light extraction through a lens; 5.4.3. Lens/encapsulant materials; 5.4.4. Lenses and encapsulant implementation; 5.5. LED component characteristics; 5.5.1. Thermal and electrical characteristics; 5.5.2. Optical characteristics; 5.5.3. Binning; 5.5.4. Reliability 5.6. Conclusion and trends |
| Record Nr. | UNINA-9910830215703321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
LEDs for lighting applications / / edited by Patrick Mottier
| LEDs for lighting applications / / edited by Patrick Mottier |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (298 p.) |
| Disciplina |
621.3815/22
621.381522 |
| Altri autori (Persone) | MottierPatrick |
| Collana | ISTE |
| Soggetto topico |
Light emitting diodes
Electric lighting - Equipment and supplies |
| ISBN |
1-282-68721-2
9786612687211 1-118-21168-5 0-470-61201-0 0-470-61029-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
LEDs for Lighting Applications; Table of Contents; Foreword; Introduction; Chapter 1. Light-Emitting Diodes: Principles and Challenges; 1.1. History of a revolution in the world of the light sources; 1.2. LEDs and lighting; 1.3. Principle of operation, color, efficiency, lifetime and quality of LEDs; 1.3.1. White light production from LEDS: principles and challenges; 1.3.2. Lifetime; 1.3.3. Quality of LEDs; 1.4. Challenges facing LEDs; 1.5. Bibliography; Chapter 2. Substrates for III-Nitride-based Electroluminescent Diodes; 2.1. Introduction
2.2. Crystal structure and epitaxial relation with 6H-SiC and Al2O32.3. Defects and constraints due to heteroepitaxy; 2.3.1. Dislocations; 2.3.2. Disorientation of the substrate; 2.3.3. Epitaxial stress; 2.3.4. Thermal stress; 2.4. MOVPE growth of GaN on sapphire; 2.4.1. GaN growth; 2.4.2. Standard 2D epitaxy; 2.4.3. 3D epitaxial growth; 2.4.4. Epitaxial lateral overgrow (ELO 1S); 2.4.5. Anisotropic growth; 2.4.6. Two stage ELO GaN growth (ELO 2S); 2.4.7. GaN growth using pendeo-epitaxy; 2.4.8. Nano epitaxy; 2.5. Bulk nitride substrates 2.5.1. HNPS (high nitrogen pressure solution method) for the fabrication of crystalline GaN2.5.2. Ammonothermal synthesis of GaN; 2.5.3. Halide vapor phase epitaxy (HVPE) of GaN; 2.6. Conclusion; 2.7. Bibliography; Chapter 3. III-Nitride High-Brightness Light-Emitting Diodes; 3.1. Introduction; 3.2. p-n junction in GaN; 3.3. Active region: InGaN/GaN quantum well; 3.3.1. Growth and structure; 3.3.2. Optical properties; 3.4. Radiative efficiency; 3.5. Conclusion and prospects; 3.6. Bibliography; Chapter 4. Diode Processing; 4.1. Introduction; 4.2. Orders of magnitude; 4.3. Diode configurations 4.3.1. Conventional chip (CC)4.3.2. Flip chip (FC); 4.3.3. Vertical thin film (VTF); 4.3.4. Thin film flip chip (TFFC); 4.4. Light extraction at wafer level; 4.5. Diode processing, etching, contact deposition; 4.5.1. N-type contacts; 4.5.2. P-type contacts; 4.6. Etching; 4.7. Substrate removal; 4.8. Potential evolutions; 4.9. Bibliography; Chapter 5. Packaging; 5.1. Introduction; 5.2. Different packaging processes; 5.2.1. Historical background; 5.2.2. From the wafer to the chip; 5.2.3. Components with connection pins; 5.2.4. SMT leadform components; 5.2.5. SMT "leadless" components 5.2.6. Other technologies5.2.7. Conclusion; 5.3. Thermal management; 5.3.1. Motivations; 5.3.2. Heat dissipation modes; 5.3.3. Thermal dissipation in LEDs; 5.3.4. Comparison of different packaging processes; 5.3.5. Conclusion; 5.4. Light extraction in LEDs; 5.4.1. Lateral light extraction in LEDs; 5.4.2. Vertical light extraction through a lens; 5.4.3. Lens/encapsulant materials; 5.4.4. Lenses and encapsulant implementation; 5.5. LED component characteristics; 5.5.1. Thermal and electrical characteristics; 5.5.2. Optical characteristics; 5.5.3. Binning; 5.5.4. Reliability 5.6. Conclusion and trends |
| Record Nr. | UNINA-9910876947103321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||