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Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
| Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür |
| Autore | Morko ̇ Hadis |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2009 |
| Descrizione fisica | 1 online resource (491 p.) |
| Disciplina |
546.6612
621.38152 |
| Altri autori (Persone) | ÖzgürÜmit <1973-> |
| Soggetto topico |
Zinc oxide
Zinc compounds |
| ISBN |
1-282-69157-0
9786612691577 3-527-62394-9 3-527-62395-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Zinc Oxide: Fundamentals, Materials and Device Technology; Contents; Preface; 1 General Properties of ZnO; 1.1 Crystal Structure; 1.2 Lattice Parameters; 1.3 Electronic Band Structure; 1.4 Mechanical Properties; 1.5 Vibrational Properties; 1.6 Thermal Properties; 1.6.1 Thermal Expansion Coefficients; 1.6.2 Thermal Conductivity; 1.6.3 Specific Heat; 1.6.4 Pyroelectricity; 1.7 Electrical Properties of Undoped ZnO; 1.7.1 Low-Field Transport; 1.7.2 High-Field Transport; References; 2 ZnO Growth; 2.1 Bulk Growth; 2.2 Substrates; 2.2.1 Sapphire Substrates for ZnO Epitaxy
2.2.2 Other Substrates for ZnO Epitaxy (ScAlMgO4, CaF2, LiTaO3, LiNbO3)2.2.3 ZnO Homoepitaxy; 2.3 Epitaxial Growth Techniques; 2.3.1 RF Magnetron Sputtering; 2.3.2 Molecular Beam Epitaxy; 2.3.2.1 Growth on c-Plane Sapphire; 2.3.2.2 Growth on a-Plane Sapphire; 2.3.2.3 Growth on GaN Templates; 2.3.2.4 Growth on ZnO Substrates; 2.3.3 Pulsed Laser Deposition; 2.3.4 Chemical Vapor Deposition; References; 3 Optical Properties; 3.1 Optical Processes in Semiconductors; 3.1.1 Fundamentals of the Absorption and Emission Processes; 3.1.2 Optical Absorption and Emission in Semiconductors 3.1.3 Band-to-Band Transitions3.1.4 Excitonic Transitions; 3.2 Optical Transitions in ZnO; 3.2.1 Free Excitons and Polaritons; 3.2.2 Bound Excitons; 3.2.3 Two-Electron Satellites in PL; 3.2.4 DAP and Shallow Acceptor-Bound Exciton Transitions and LO-Phonon Replicas in PL; 3.2.5 Temperature-Dependent PL Measurements; 3.3 Defects in ZnO; 3.3.1 Predictions from First Principles; 3.3.2 Defect-Related Optical Transitions in ZnO; 3.3.2.1 Green Luminescence Band; 3.3.2.2 Yellow Luminescence Band; 3.3.2.3 Red Luminescence Band; 3.4 Refractive Index of ZnO and MgZnO; 3.5 Stimulated Emission in ZnO 3.5.1 Polycrystalline ZnO Films and''Random Lasers''3.5.2 Multiple Quantum Wells; 3.6 Recombination Dynamics in ZnO; 3.7 Nonlinear Optical Properties; 3.7.1 Second-Order Nonlinear Optical Properties; 3.7.1.1 Second-Harmonic Generation; 3.7.2 Third-Order Nonlinear Optical Properties; 3.7.2.1 Third Harmonic Generation; 3.7.3 Intensity Dependent Refractive Index; 3.7.4 Two-Photon Absorption; References; 4 Doping of ZnO; 4.1 n-Type Doping; 4.2 p-Type Doping; 4.2.1 Nitrogen Doping; 4.2.2 Codoping Method; 4.2.3 Other Dopants in Group V; 4.2.4 Concluding Remarks on Reliability of p-Type ZnO References5 ZnO-Based Dilute Magnetic Semiconductors; 5.1 Doping with Transition Metals; 5.2 General Remarks About Dilute Magnetic Semiconductors; 5.3 Classification of Magnetic Materials; 5.4 A Brief Theory of Magnetization; 5.5 Dilute Magnetic Semiconductor Theoretical Aspects; 5.6 Measurements Techniques for Identification of Ferromagnetism; 5.7 Magnetic Interactions in DMS; 5.7.1 Carrier-Single Magnetic Ion Interaction; 5.7.2 Interaction Between Magnetic Ions; 5.7.2.1 Superexchange Mechanism; 5.7.2.2 Blombergen-Rowland Mechanism; 5.7.2.3 Double Exchange Interaction 5.7.2.4 Ruderman-Kittel-Kasuya-Yoshida Mechanism |
| Record Nr. | UNINA-9910145448703321 |
Morko ̇ Hadis
|
||
| Weinheim, : Wiley-VCH, c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
| Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür |
| Autore | Morko ̇ Hadis |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2009 |
| Descrizione fisica | 1 online resource (491 p.) |
| Disciplina |
546.6612
621.38152 |
| Altri autori (Persone) | ÖzgürÜmit <1973-> |
| Soggetto topico |
Zinc oxide
Zinc compounds |
| ISBN |
1-282-69157-0
9786612691577 3-527-62394-9 3-527-62395-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Zinc Oxide: Fundamentals, Materials and Device Technology; Contents; Preface; 1 General Properties of ZnO; 1.1 Crystal Structure; 1.2 Lattice Parameters; 1.3 Electronic Band Structure; 1.4 Mechanical Properties; 1.5 Vibrational Properties; 1.6 Thermal Properties; 1.6.1 Thermal Expansion Coefficients; 1.6.2 Thermal Conductivity; 1.6.3 Specific Heat; 1.6.4 Pyroelectricity; 1.7 Electrical Properties of Undoped ZnO; 1.7.1 Low-Field Transport; 1.7.2 High-Field Transport; References; 2 ZnO Growth; 2.1 Bulk Growth; 2.2 Substrates; 2.2.1 Sapphire Substrates for ZnO Epitaxy
2.2.2 Other Substrates for ZnO Epitaxy (ScAlMgO4, CaF2, LiTaO3, LiNbO3)2.2.3 ZnO Homoepitaxy; 2.3 Epitaxial Growth Techniques; 2.3.1 RF Magnetron Sputtering; 2.3.2 Molecular Beam Epitaxy; 2.3.2.1 Growth on c-Plane Sapphire; 2.3.2.2 Growth on a-Plane Sapphire; 2.3.2.3 Growth on GaN Templates; 2.3.2.4 Growth on ZnO Substrates; 2.3.3 Pulsed Laser Deposition; 2.3.4 Chemical Vapor Deposition; References; 3 Optical Properties; 3.1 Optical Processes in Semiconductors; 3.1.1 Fundamentals of the Absorption and Emission Processes; 3.1.2 Optical Absorption and Emission in Semiconductors 3.1.3 Band-to-Band Transitions3.1.4 Excitonic Transitions; 3.2 Optical Transitions in ZnO; 3.2.1 Free Excitons and Polaritons; 3.2.2 Bound Excitons; 3.2.3 Two-Electron Satellites in PL; 3.2.4 DAP and Shallow Acceptor-Bound Exciton Transitions and LO-Phonon Replicas in PL; 3.2.5 Temperature-Dependent PL Measurements; 3.3 Defects in ZnO; 3.3.1 Predictions from First Principles; 3.3.2 Defect-Related Optical Transitions in ZnO; 3.3.2.1 Green Luminescence Band; 3.3.2.2 Yellow Luminescence Band; 3.3.2.3 Red Luminescence Band; 3.4 Refractive Index of ZnO and MgZnO; 3.5 Stimulated Emission in ZnO 3.5.1 Polycrystalline ZnO Films and''Random Lasers''3.5.2 Multiple Quantum Wells; 3.6 Recombination Dynamics in ZnO; 3.7 Nonlinear Optical Properties; 3.7.1 Second-Order Nonlinear Optical Properties; 3.7.1.1 Second-Harmonic Generation; 3.7.2 Third-Order Nonlinear Optical Properties; 3.7.2.1 Third Harmonic Generation; 3.7.3 Intensity Dependent Refractive Index; 3.7.4 Two-Photon Absorption; References; 4 Doping of ZnO; 4.1 n-Type Doping; 4.2 p-Type Doping; 4.2.1 Nitrogen Doping; 4.2.2 Codoping Method; 4.2.3 Other Dopants in Group V; 4.2.4 Concluding Remarks on Reliability of p-Type ZnO References5 ZnO-Based Dilute Magnetic Semiconductors; 5.1 Doping with Transition Metals; 5.2 General Remarks About Dilute Magnetic Semiconductors; 5.3 Classification of Magnetic Materials; 5.4 A Brief Theory of Magnetization; 5.5 Dilute Magnetic Semiconductor Theoretical Aspects; 5.6 Measurements Techniques for Identification of Ferromagnetism; 5.7 Magnetic Interactions in DMS; 5.7.1 Carrier-Single Magnetic Ion Interaction; 5.7.2 Interaction Between Magnetic Ions; 5.7.2.1 Superexchange Mechanism; 5.7.2.2 Blombergen-Rowland Mechanism; 5.7.2.3 Double Exchange Interaction 5.7.2.4 Ruderman-Kittel-Kasuya-Yoshida Mechanism |
| Record Nr. | UNINA-9910830331703321 |
|
Morko ̇ Hadis
|
||
| Weinheim, : Wiley-VCH, c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
| Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür |
| Autore | Morko ̇ Hadis |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2009 |
| Descrizione fisica | 1 online resource (491 p.) |
| Disciplina |
546.6612
621.38152 |
| Altri autori (Persone) | ÖzgürÜmit <1973-> |
| Soggetto topico |
Zinc oxide
Zinc compounds |
| ISBN |
1-282-69157-0
9786612691577 3-527-62394-9 3-527-62395-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Zinc Oxide: Fundamentals, Materials and Device Technology; Contents; Preface; 1 General Properties of ZnO; 1.1 Crystal Structure; 1.2 Lattice Parameters; 1.3 Electronic Band Structure; 1.4 Mechanical Properties; 1.5 Vibrational Properties; 1.6 Thermal Properties; 1.6.1 Thermal Expansion Coefficients; 1.6.2 Thermal Conductivity; 1.6.3 Specific Heat; 1.6.4 Pyroelectricity; 1.7 Electrical Properties of Undoped ZnO; 1.7.1 Low-Field Transport; 1.7.2 High-Field Transport; References; 2 ZnO Growth; 2.1 Bulk Growth; 2.2 Substrates; 2.2.1 Sapphire Substrates for ZnO Epitaxy
2.2.2 Other Substrates for ZnO Epitaxy (ScAlMgO4, CaF2, LiTaO3, LiNbO3)2.2.3 ZnO Homoepitaxy; 2.3 Epitaxial Growth Techniques; 2.3.1 RF Magnetron Sputtering; 2.3.2 Molecular Beam Epitaxy; 2.3.2.1 Growth on c-Plane Sapphire; 2.3.2.2 Growth on a-Plane Sapphire; 2.3.2.3 Growth on GaN Templates; 2.3.2.4 Growth on ZnO Substrates; 2.3.3 Pulsed Laser Deposition; 2.3.4 Chemical Vapor Deposition; References; 3 Optical Properties; 3.1 Optical Processes in Semiconductors; 3.1.1 Fundamentals of the Absorption and Emission Processes; 3.1.2 Optical Absorption and Emission in Semiconductors 3.1.3 Band-to-Band Transitions3.1.4 Excitonic Transitions; 3.2 Optical Transitions in ZnO; 3.2.1 Free Excitons and Polaritons; 3.2.2 Bound Excitons; 3.2.3 Two-Electron Satellites in PL; 3.2.4 DAP and Shallow Acceptor-Bound Exciton Transitions and LO-Phonon Replicas in PL; 3.2.5 Temperature-Dependent PL Measurements; 3.3 Defects in ZnO; 3.3.1 Predictions from First Principles; 3.3.2 Defect-Related Optical Transitions in ZnO; 3.3.2.1 Green Luminescence Band; 3.3.2.2 Yellow Luminescence Band; 3.3.2.3 Red Luminescence Band; 3.4 Refractive Index of ZnO and MgZnO; 3.5 Stimulated Emission in ZnO 3.5.1 Polycrystalline ZnO Films and''Random Lasers''3.5.2 Multiple Quantum Wells; 3.6 Recombination Dynamics in ZnO; 3.7 Nonlinear Optical Properties; 3.7.1 Second-Order Nonlinear Optical Properties; 3.7.1.1 Second-Harmonic Generation; 3.7.2 Third-Order Nonlinear Optical Properties; 3.7.2.1 Third Harmonic Generation; 3.7.3 Intensity Dependent Refractive Index; 3.7.4 Two-Photon Absorption; References; 4 Doping of ZnO; 4.1 n-Type Doping; 4.2 p-Type Doping; 4.2.1 Nitrogen Doping; 4.2.2 Codoping Method; 4.2.3 Other Dopants in Group V; 4.2.4 Concluding Remarks on Reliability of p-Type ZnO References5 ZnO-Based Dilute Magnetic Semiconductors; 5.1 Doping with Transition Metals; 5.2 General Remarks About Dilute Magnetic Semiconductors; 5.3 Classification of Magnetic Materials; 5.4 A Brief Theory of Magnetization; 5.5 Dilute Magnetic Semiconductor Theoretical Aspects; 5.6 Measurements Techniques for Identification of Ferromagnetism; 5.7 Magnetic Interactions in DMS; 5.7.1 Carrier-Single Magnetic Ion Interaction; 5.7.2 Interaction Between Magnetic Ions; 5.7.2.1 Superexchange Mechanism; 5.7.2.2 Blombergen-Rowland Mechanism; 5.7.2.3 Double Exchange Interaction 5.7.2.4 Ruderman-Kittel-Kasuya-Yoshida Mechanism |
| Record Nr. | UNINA-9910840846603321 |
|
Morko ̇ Hadis
|
||
| Weinheim, : Wiley-VCH, c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||