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The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki
| The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| Autore | Miura-Mattausch Mitiko <1949-> |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2008 |
| Descrizione fisica | 1 online resource (378 p.) |
| Disciplina | 621.3815/284015118 |
| Altri autori (Persone) |
MattauschHans Jurgen
EzakiTatsuya |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Metal oxide semiconductor field-effect transistors - Mathematical models |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-96089-6
9786611960896 981-281-205-9 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Semiconductor device physics. 1.1. Band structure concept. 1.2. Carrier density and fermi level in semiconductors. 1.3. P-N junction. 1.4. Device simulation. 1.5. Summary of equations and symbols presented in chapter 1 for semiconductor device physics -- 2. Basic compact surface-potential model of the MOSFET. 2.1. Compact modeling concept. 2.2. Device structure parameters of the MOSFET. 2.3. Surface potentials. 2.4. Charge densities. 2.5. Drain current. 2.6. Summary of equations and model parameters presented in chapter 2 for basic compact surface-potential model of the MOSFET -- 3. Advanced MOSFET phenomena modeling. 3.1. Threshold voltage shift. 3.2. Depletion effect of the poly-si gate. 3.3. Quantum-mechanical effects. 3.4. Mobility model. 3.5. Channel-length modulation. 3.6. Narrow-channel effects. 3.7. Effects of the length of the diffused source/drain contacts in Shallow-Trench Isolation (STI) technologies. 3.8. Temperature dependences. 3.9. Conservation of symmetry at V[symbol] = 0. 3.10. Harmonic distortions. 3.11. Summary of equations and model parameters appearing in chapter 3 for advanced MOSFET phenomena modeling -- 4. Capacitances. 4.1. Intrinsic capacitances. 4.2. Overlap capacitances. 4.3. Longitudinal (lateral) -field-induced capacitance. 4.4. Fringing capacitance. 4.5. Summary of equations and model parameters appearing in chapter 4 for capacitances -- 5. Leakage currents and junction diode. 5.1. Leakage currents. 5.2. Bulk/source and bulk/drain junction models. 5.3. Summary of equations and model parameters appeared in chapter 5 for leakage currents and junction diode -- 6. Modeling of phenomena important for RF applications. 6.1. Noise models. 6.2. Non-Quasi-Static (NQS) model. 6.3. External MOS transistor resistances. 6.4. Summary of equations and model parameters appeared in chapter 6 for modeling of phenomena important for RF applications -- 7. Summary of HiSIM's model equations, parameters, and parameter-extraction method. 7.1. Model equations of HiSIM. 7.2. Model flags and exclusion of modeled effects. 7.3. Model parameters and their meaning. 7.4. Default values of the model parameter. 7.5. Parameter extraction method. |
| Record Nr. | UNINA-9910454177003321 |
Miura-Mattausch Mitiko <1949->
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki
| The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| Autore | Miura-Mattausch Mitiko <1949-> |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2008 |
| Descrizione fisica | 1 online resource (378 p.) |
| Disciplina | 621.3815/284015118 |
| Altri autori (Persone) |
MattauschHans Jurgen
EzakiTatsuya |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN |
1-281-96089-6
9786611960896 981-281-205-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Semiconductor device physics. 1.1. Band structure concept. 1.2. Carrier density and fermi level in semiconductors. 1.3. P-N junction. 1.4. Device simulation. 1.5. Summary of equations and symbols presented in chapter 1 for semiconductor device physics -- 2. Basic compact surface-potential model of the MOSFET. 2.1. Compact modeling concept. 2.2. Device structure parameters of the MOSFET. 2.3. Surface potentials. 2.4. Charge densities. 2.5. Drain current. 2.6. Summary of equations and model parameters presented in chapter 2 for basic compact surface-potential model of the MOSFET -- 3. Advanced MOSFET phenomena modeling. 3.1. Threshold voltage shift. 3.2. Depletion effect of the poly-si gate. 3.3. Quantum-mechanical effects. 3.4. Mobility model. 3.5. Channel-length modulation. 3.6. Narrow-channel effects. 3.7. Effects of the length of the diffused source/drain contacts in Shallow-Trench Isolation (STI) technologies. 3.8. Temperature dependences. 3.9. Conservation of symmetry at V[symbol] = 0. 3.10. Harmonic distortions. 3.11. Summary of equations and model parameters appearing in chapter 3 for advanced MOSFET phenomena modeling -- 4. Capacitances. 4.1. Intrinsic capacitances. 4.2. Overlap capacitances. 4.3. Longitudinal (lateral) -field-induced capacitance. 4.4. Fringing capacitance. 4.5. Summary of equations and model parameters appearing in chapter 4 for capacitances -- 5. Leakage currents and junction diode. 5.1. Leakage currents. 5.2. Bulk/source and bulk/drain junction models. 5.3. Summary of equations and model parameters appeared in chapter 5 for leakage currents and junction diode -- 6. Modeling of phenomena important for RF applications. 6.1. Noise models. 6.2. Non-Quasi-Static (NQS) model. 6.3. External MOS transistor resistances. 6.4. Summary of equations and model parameters appeared in chapter 6 for modeling of phenomena important for RF applications -- 7. Summary of HiSIM's model equations, parameters, and parameter-extraction method. 7.1. Model equations of HiSIM. 7.2. Model flags and exclusion of modeled effects. 7.3. Model parameters and their meaning. 7.4. Default values of the model parameter. 7.5. Parameter extraction method. |
| Record Nr. | UNINA-9910782479403321 |
|
Miura-Mattausch Mitiko <1949->
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The physics and modeling of MOSFETS : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki
| The physics and modeling of MOSFETS : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| Autore | Miura-Mattausch Mitiko <1949-> |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2008 |
| Descrizione fisica | 1 online resource (378 p.) |
| Disciplina | 621.3815/284015118 |
| Altri autori (Persone) |
MattauschHans Jurgen
EzakiTatsuya |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN |
1-281-96089-6
9786611960896 981-281-205-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Semiconductor device physics. 1.1. Band structure concept. 1.2. Carrier density and fermi level in semiconductors. 1.3. P-N junction. 1.4. Device simulation. 1.5. Summary of equations and symbols presented in chapter 1 for semiconductor device physics -- 2. Basic compact surface-potential model of the MOSFET. 2.1. Compact modeling concept. 2.2. Device structure parameters of the MOSFET. 2.3. Surface potentials. 2.4. Charge densities. 2.5. Drain current. 2.6. Summary of equations and model parameters presented in chapter 2 for basic compact surface-potential model of the MOSFET -- 3. Advanced MOSFET phenomena modeling. 3.1. Threshold voltage shift. 3.2. Depletion effect of the poly-si gate. 3.3. Quantum-mechanical effects. 3.4. Mobility model. 3.5. Channel-length modulation. 3.6. Narrow-channel effects. 3.7. Effects of the length of the diffused source/drain contacts in Shallow-Trench Isolation (STI) technologies. 3.8. Temperature dependences. 3.9. Conservation of symmetry at V[symbol] = 0. 3.10. Harmonic distortions. 3.11. Summary of equations and model parameters appearing in chapter 3 for advanced MOSFET phenomena modeling -- 4. Capacitances. 4.1. Intrinsic capacitances. 4.2. Overlap capacitances. 4.3. Longitudinal (lateral) -field-induced capacitance. 4.4. Fringing capacitance. 4.5. Summary of equations and model parameters appearing in chapter 4 for capacitances -- 5. Leakage currents and junction diode. 5.1. Leakage currents. 5.2. Bulk/source and bulk/drain junction models. 5.3. Summary of equations and model parameters appeared in chapter 5 for leakage currents and junction diode -- 6. Modeling of phenomena important for RF applications. 6.1. Noise models. 6.2. Non-Quasi-Static (NQS) model. 6.3. External MOS transistor resistances. 6.4. Summary of equations and model parameters appeared in chapter 6 for modeling of phenomena important for RF applications -- 7. Summary of HiSIM's model equations, parameters, and parameter-extraction method. 7.1. Model equations of HiSIM. 7.2. Model flags and exclusion of modeled effects. 7.3. Model parameters and their meaning. 7.4. Default values of the model parameter. 7.5. Parameter extraction method. |
| Record Nr. | UNINA-9910811398903321 |
|
Miura-Mattausch Mitiko <1949->
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||