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Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns
| Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications Ltd., , [2013] |
| Descrizione fisica | 1 online resource (328 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
HeynsMarc
MertensPaul MeurisMarc |
| Collana | Solid state phenomena |
| Soggetto topico |
Electrical engineering
Semiconductors - Surfaces |
| ISBN | 3-03813-908-4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Ultra Clean Processing of Semiconductor Surfaces XI; Preface, Committees and Acknowledgements; Table of Contents; Keynote; Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors; Chapter 1: Cleaning for FEOL Applications; Cleaning Technology for Advanced Devices beyond 20 nm Node; Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue; Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals; Development of a Integrated Dry/Wet Hybrid Cleaning System
New Chemical Vapor Delivery Systems for Surface CleaningRemoval of UV Cured Resin Using Hybrid Cleaning Method; Chapter 2: Wet Etching; Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process; Wet Etching Behavior of Poly-Si in TMAH Solution; Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor; Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent; SiO2 Etch Rate Modification by Ion Implantation; Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch Chapter 3: Surface Chemistry and FunctionalisationChemical Control of Surfaces: From Fundamental Understanding to Practical Application; Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance; A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor; Clean Process Mechanism of HKMG during N-PMOS Patterning; Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers); Evaluation of CD Fluctuation on QC Monitor In Situ Studies of III-V Surfaces and High-K Atomic Layer DepositionALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry; Cleaning of III-V Materials: Surface Chemistry Considerations; Chapter 4: Cleaning for BEOL and 3D Applications; Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features; The Risk of Pattern Collapse for Structures in Future Logic Devices Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue RemovalWet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process; Analysis of Oxidized Copper Surface and its Evolution; Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning; Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture - A Case Study UV-Induced Modification of Fluorocarbon Polymer: Effect of Treatment Atmosphere and Aging on Dissolution in Organic Solvent |
| Record Nr. | UNINA-9911006760803321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications Ltd., , [2013] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns
| Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns |
| Pubbl/distr/stampa | Pfaffikon, Switzerland : , : TTP, , 2014 |
| Descrizione fisica | 1 online resource (331 p.) |
| Disciplina | 621.38152 |
| Collana | Solid State Phenomena |
| Soggetto topico | Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03826-626-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Ultra Clean Processing of Semiconductor Surfaces XII; Preface, Committee and Acknowledgement; Table of Contents; Chapter 1: Cleaning for FEOL Applications; Necessity of Cleaning and its Application in Future Memory Devices; Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique; Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces; HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth
Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching Aluminum Reduction in SC1; Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals; Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition; Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes ; Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area; InGaAs (110) Surface Cleaning Using Atomic Hydrogen; Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid; Nanoscale Etching and Reoxidation of InAs Passivation of In Sb(100) with 1-Eicosanethiol Self-Assembled Monolayers Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment; Surface Cleaning of Graphene by CO2 Cluster; Chapter 3: Wet Etching for FEOL Applications; Process Control Challenges of Wet Etching Large MEMS Si Cavities; Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions; Advanced Monitoring of TMAH Solution; Effect of Dissolved Oxygen for Advanced Wet Processing; Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam; Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution; Nickel Selective Etch for Contacts on Ge Based Devices; Chapter 4: Wet Processing of High Aspect Ratio Structures; Study of Wetting of Nanostructures Using Decoration by Etching; Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region; Freeze Drying of High Aspect Ratio Structures Chapter 5: Fluid Dynamics, Cleaning Mechanics Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch; Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process; Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning; Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use; Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation; Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP Effect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration |
| Record Nr. | UNINA-9910459972603321 |
| Pfaffikon, Switzerland : , : TTP, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns
| Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns |
| Pubbl/distr/stampa | Pfaffikon, Switzerland : , : TTP, , 2014 |
| Descrizione fisica | 1 online resource (331 p.) |
| Disciplina | 621.38152 |
| Collana | Solid State Phenomena |
| Soggetto topico | Semiconductors |
| ISBN | 3-03826-626-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Ultra Clean Processing of Semiconductor Surfaces XII; Preface, Committee and Acknowledgement; Table of Contents; Chapter 1: Cleaning for FEOL Applications; Necessity of Cleaning and its Application in Future Memory Devices; Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique; Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces; HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth
Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching Aluminum Reduction in SC1; Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals; Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition; Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes ; Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area; InGaAs (110) Surface Cleaning Using Atomic Hydrogen; Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid; Nanoscale Etching and Reoxidation of InAs Passivation of In Sb(100) with 1-Eicosanethiol Self-Assembled Monolayers Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment; Surface Cleaning of Graphene by CO2 Cluster; Chapter 3: Wet Etching for FEOL Applications; Process Control Challenges of Wet Etching Large MEMS Si Cavities; Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions; Advanced Monitoring of TMAH Solution; Effect of Dissolved Oxygen for Advanced Wet Processing; Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam; Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution; Nickel Selective Etch for Contacts on Ge Based Devices; Chapter 4: Wet Processing of High Aspect Ratio Structures; Study of Wetting of Nanostructures Using Decoration by Etching; Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region; Freeze Drying of High Aspect Ratio Structures Chapter 5: Fluid Dynamics, Cleaning Mechanics Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch; Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process; Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning; Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use; Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation; Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP Effect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration |
| Record Nr. | UNINA-9910787025503321 |
| Pfaffikon, Switzerland : , : TTP, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns
| Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns |
| Pubbl/distr/stampa | Pfaffikon, Switzerland : , : TTP, , 2014 |
| Descrizione fisica | 1 online resource (331 p.) |
| Disciplina | 621.38152 |
| Collana | Solid State Phenomena |
| Soggetto topico | Semiconductors |
| ISBN | 3-03826-626-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Ultra Clean Processing of Semiconductor Surfaces XII; Preface, Committee and Acknowledgement; Table of Contents; Chapter 1: Cleaning for FEOL Applications; Necessity of Cleaning and its Application in Future Memory Devices; Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique; Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces; HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth
Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching Aluminum Reduction in SC1; Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals; Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition; Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes ; Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area; InGaAs (110) Surface Cleaning Using Atomic Hydrogen; Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid; Nanoscale Etching and Reoxidation of InAs Passivation of In Sb(100) with 1-Eicosanethiol Self-Assembled Monolayers Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment; Surface Cleaning of Graphene by CO2 Cluster; Chapter 3: Wet Etching for FEOL Applications; Process Control Challenges of Wet Etching Large MEMS Si Cavities; Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions; Advanced Monitoring of TMAH Solution; Effect of Dissolved Oxygen for Advanced Wet Processing; Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam; Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution; Nickel Selective Etch for Contacts on Ge Based Devices; Chapter 4: Wet Processing of High Aspect Ratio Structures; Study of Wetting of Nanostructures Using Decoration by Etching; Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region; Freeze Drying of High Aspect Ratio Structures Chapter 5: Fluid Dynamics, Cleaning Mechanics Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch; Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process; Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning; Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use; Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation; Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP Effect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration |
| Record Nr. | UNINA-9910806108403321 |
| Pfaffikon, Switzerland : , : TTP, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||