| Autore |
Maiti C. K
|
| Edizione | [1st edition] |
| Pubbl/distr/stampa |
Boca Raton, : Taylor & Francis, c2013
|
| Descrizione fisica |
1 online resource (311 p.)
|
| Disciplina |
621.3815/284
621.3815284
|
| Altri autori (Persone) |
MaitiT. K
|
| Soggetto topico |
Integrated circuits - Fault tolerance
Metal oxide semiconductor field-effect transistors - Reliability
Strains and stresses
|
| Soggetto genere / forma |
Electronic books.
|
| ISBN |
1-4665-0347-5
|
| Formato |
Materiale a stampa  |
| Livello bibliografico |
Monografia |
| Lingua di pubblicazione |
eng
|
| Nota di contenuto |
Front Cover; Contents; Preface; About the Authors; List of Abbreviations; List of Symbols; Chapter 1 - Introduction; Chapter 2 - Substrate-Induced Strain Engineering in CMOS Technology; Chapter 3 - Process-Induced Stress Engineering in CMOS Technology; Chapter 4 - Electronic Properties of Strain-Engineered Semiconductors; Chapter 5 - Strain-Engineered MOSFETs; Chapter 6 - Noise in Strain-Engineered Devices; Chapter 7 - Technology CAD of Strain-Engineered MOSFETs; Chapter 8 - Reliability and Degradation of Strain-Engineered MOSFETs
Chapter 9 - Process Compact Modelling of Strain-Engineered MOSFETsChapter 10 - Process-Aware Design of Strain-Engineered MOSFETs; Chapter 11 - Conclusions; Back Cover
|
| Record Nr. | UNINA-9910403761403321 |
Info
Strain-engineered MOSFETs / / C. K. Maiti, T. K. Maiti
