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Computational lithography [[electronic resource] /] / Xu Ma and Gonzalo R. Arce
| Computational lithography [[electronic resource] /] / Xu Ma and Gonzalo R. Arce |
| Autore | Ma Xu <1983-> |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Oxford, : Wiley-Blackwell, 2010 |
| Descrizione fisica | 1 online resource (244 p.) |
| Disciplina | 621.381531 |
| Altri autori (Persone) | ArceGonzalo R |
| Collana | Wiley series in pure and applied optics |
| Soggetto topico |
Microlithography - Mathematics
Integrated circuits - Design and construction - Mathematics Photolithography - Mathematics Semiconductors - Etching - Mathematics Resolution (Optics) |
| ISBN |
1-118-04357-X
1-282-75596-X 9786612755965 0-470-61894-9 0-470-61893-0 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910140811003321 |
Ma Xu <1983->
|
||
| Oxford, : Wiley-Blackwell, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Computational lithography / / Xu Ma and Gonzalo R. Arce
| Computational lithography / / Xu Ma and Gonzalo R. Arce |
| Autore | Ma Xu <1983-> |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Oxford, : Wiley-Blackwell, 2010 |
| Descrizione fisica | 1 online resource (244 p.) |
| Disciplina | 621.381531 |
| Altri autori (Persone) | ArceGonzalo R |
| Collana | Wiley series in pure and applied optics |
| Soggetto topico |
Microlithography - Mathematics
Integrated circuits - Design and construction - Mathematics Photolithography - Mathematics Semiconductors - Etching - Mathematics Resolution (Optics) |
| ISBN |
1-118-04357-X
1-282-75596-X 9786612755965 0-470-61894-9 0-470-61893-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Computational Lithography -- Contents -- Preface -- Acknowledgments -- Acronyms -- 1 Introduction -- 1.1 OPTICAL LITHOGRAPHY -- 1.1.1 Optical Lithography and Integrated Circuits -- 1.1.2 Brief History of Optical Lithography Systems -- 1.2 RAYLEIGH'S RESOLUTION -- 1.3 RESIST PROCESSES AND CHARACTERISTICS -- 1.4 TECHNIQUES IN COMPUTATIONAL LITHOGRAPHY -- 1.4.1 Optical Proximity Correction -- 1.4.2 Phase-Shifting Masks -- 1.4.3 Off-Axis Illumination -- 1.4.4 Second-Generation RETs -- 1.5 OUTLINE -- 2 Optical Lithography Systems -- 2.1 PARTIALLY COHERENT IMAGING SYSTEMS -- 2.1.1 Abbe's Model -- 2.1.2 Hopkins Diffraction Model -- 2.1.3 Coherent and Incoherent Imaging Systems -- 2.2 APPROXIMATION MODELS -- 2.2.1 Fourier Series Expansion Model -- 2.2.2 Singular Value Decomposition Model -- 2.2.3 Average Coherent Approximation Model -- 2.2.4 Discussion and Comparison -- 2.3 SUMMARY -- 3 Rule-Based Resolution Enhancement Techniques -- 3.1 RET TYPES -- 3.1.1 Rule-Based RETs -- 3.1.2 Model-Based RETs -- 3.1.3 Hybrid RETs -- 3.2 RULE-BASED OPC -- 3.2.1 Catastrophic OPC -- 3.2.2 One-Dimensional OPC -- 3.2.3 Line-Shortening Reduction OPC -- 3.2.4 Two-Dimensional OPC -- 3.3 RULE-BASED PSM -- 3.3.1 Dark-Field Application -- 3.3.2 Light-Field Application -- 3.4 RULE-BASED OAI -- 3.5 SUMMARY -- 4 Fundamentals of Optimization -- 4.1 DEFINITION AND CLASSIFICATION -- 4.1.1 Definitions in the Optimization Problem -- 4.1.2 Classification of Optimization Problems -- 4.2 UNCONSTRAINED OPTIMIZATION -- 4.2.1 Solution of Unconstrained Optimization Problem -- 4.2.2 Unconstrained Optimization Algorithms -- 4.3 SUMMARY -- 5 Computational Lithography with Coherent Illumination -- 5.1 PROBLEM FORMULATION -- 5.2 OPC OPTIMIZATION -- 5.2.1 OPC Design Algorithm -- 5.2.2 Simulations -- 5.3 TWO-PHASE PSM OPTIMIZATION -- 5.3.1 Two-Phase PSM Design Algorithm -- 5.3.2 Simulations.
5.4 GENERALIZED PSM OPTIMIZATION -- 5.4.1 Generalized PSM Design Algorithm -- 5.4.2 Simulations -- 5.5 RESIST MODELING EFFECTS -- 5.6 SUMMARY -- 6 Regularization Framework -- 6.1 DISCRETIZATION PENALTY -- 6.1.1 Discretization Penalty for OPC Optimization -- 6.1.2 Discretization Penalty for Two-Phase PSM Optimization -- 6.1.3 Discretization Penalty for Generalized PSM Optimization -- 6.2 COMPLEXITY PENALTY -- 6.2.1 Total Variation Penalty -- 6.2.2 Global Wavelet Penalty -- 6.2.3 Localized Wavelet Penalty -- 6.3 SUMMARY -- 7 Computational Lithography with Partially Coherent Illumination -- 7.1 OPC OPTIMIZATION -- 7.1.1 OPC Design Algorithm Using the Fourier Series Expansion Model -- 7.1.2 Simulations Using the Fourier Series Expansion Model -- 7.1.3 OPC Design Algorithm Using the Average Coherent Approximation Model -- 7.1.4 Simulations Using the Average Coherent Approximation Model -- 7.1.5 Discussion and Comparison -- 7.2 PSM OPTIMIZATION -- 7.2.1 PSM Design Algorithm Using the Singular Value Decomposition Model -- 7.2.2 Discretization Regularization for PSM Design Algorithm -- 7.2.3 Simulations -- 7.3 SUMMARY -- 8 Other RET Optimization Techniques -- 8.1 DOUBLE-PATTERNING METHOD -- 8.2 POST-PROCESSING BASED ON 2D DCT -- 8.3 PHOTORESIST TONE REVERSING METHOD -- 8.4 SUMMARY -- 9 Source and Mask Optimization -- 9.1 LITHOGRAPHY PRELIMINARIES -- 9.2 TOPOLOGICAL CONSTRAINT -- 9.3 SOURCE-MASK OPTIMIZATION ALGORITHM -- 9.4 SIMULATIONS -- 9.5 SUMMARY -- 10 Coherent Thick-Mask Optimization -- 10.1 KIRCHHOFF BOUNDARY CONDITIONS -- 10.2 BOUNDARY LAYER MODEL -- 10.2.1 Boundary Layer Model in Coherent Imaging Systems -- 10.2.2 Boundary Layer Model in Partially Coherent Imaging Systems -- 10.3 LITHOGRAPHY PRELIMINARIES -- 10.4 OPC OPTIMIZATION -- 10.4.1 Topological Constraint -- 10.4.2 OPC Optimization Algorithm Based on BL Model Under Coherent Illumination. 10.4.3 Simulations -- 10.5 PSM OPTIMIZATION -- 10.5.1 Topological Constraint -- 10.5.2 PSM Optimization Algorithm Based on BL Model Under Coherent Illumination -- 10.5.3 Simulations -- 10.6 SUMMARY -- 11 Conclusions and New Directions of Computational Lithography -- 11.1 CONCLUSION -- 11.2 NEW DIRECTIONS OF COMPUTATIONAL LITHOGRAPHY -- 11.2.1 OPC Optimization for the Next-Generation Lithography Technologies -- 11.2.2 Initialization Approach for the Inverse Lithography Optimization -- 11.2.3 Double Patterning and Double Exposure Methods in Partially Coherent Imaging System -- 11.2.4 OPC and PSM Optimizations for Inverse Lithography Based on Rigorous Mask Models in Partially Coherent Imaging System -- 11.2.5 Simultaneous Source and Mask Optimization for Inverse Lithography Based on Rigorous Mask Models -- 11.2.6 Investigation of Factors Influencing the Complexity of the OPC and PSM Optimization Algorithms -- Appendix A: Formula Derivation in Chapter 5 -- Appendix B: Manhattan Geometry -- Appendix C: Formula Derivation in Chapter 6 -- Appendix D: Formula Derivation in Chapter 7 -- Appendix E: Formula Derivation in Chapter 8 -- Appendix F: Formula Derivation in Chapter 9 -- Appendix G: Formula Derivation in Chapter 10 -- Appendix H: Software Guide -- References -- Index. |
| Record Nr. | UNINA-9910821633803321 |
|
Ma Xu <1983->
|
||
| Oxford, : Wiley-Blackwell, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||