SiC materials and devices / / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
Edizione | [1st ed.] |
Pubbl/distr/stampa | New Jersey ; ; London, : World Scientific, 2007 |
Descrizione fisica | 1 online resource (143 p.) |
Disciplina | 621.38152 |
Altri autori (Persone) |
ShurMichael
RumyantsevSergey LevinshteinM. E (Mikhail Efimovich) |
Collana |
Selected topics in electronics and systems
SiC materials and devices |
Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
ISBN |
1-281-12124-X
9786611121242 981-270-685-2 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers
4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; References |
Record Nr. | UNINA-9910814896703321 |
New Jersey ; ; London, : World Scientific, 2007 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
SiC materials and devices . Vol. 1 / / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
Edizione | [1st ed.] |
Pubbl/distr/stampa | New Jersey, : World Scientific, 2006 |
Descrizione fisica | 1 online resource (342 p.) |
Disciplina | 621.38152 |
Altri autori (Persone) |
ShurMichael
RumyantsevSergey L LevinshteinM. E (Mikhail Efimovich) |
Collana | Selected topics in electronics and systems |
Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
ISBN |
1-281-37331-1
9786611373313 981-277-337-1 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
CONTENTS; Preface; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime
9 Properties of SiC/SiO2 Interfaces Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts 3 Specific Contact Resistance 4 Ohmic Contacts to n-type SiC; 5 Ohmic Contacts to p-type SiC; 6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode 1 Introduction 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction 2 PiN Rectifier Design and Operation 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions; Acknowledgements; References; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors 3 Silicon Carbide Varactors |
Record Nr. | UNINA-9910809987003321 |
New Jersey, : World Scientific, 2006 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|