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La main de Cendrars / / Claude Leroy
| La main de Cendrars / / Claude Leroy |
| Autore | Leroy Claude |
| Pubbl/distr/stampa | Villeneuve d'Ascq, : Presses universitaires du Septentrion, 2020 |
| Descrizione fisica | 1 online resource (368 p.) |
| Disciplina | 841/.912 |
| Altri autori (Persone) | CendrarsMiriam |
| Collana | Objet |
| Soggetto topico | People with disabilities in literature |
| Soggetto non controllato | poésie |
| ISBN | 2-7574-2633-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | fre |
| Record Nr. | UNINA-9910495903103321 |
Leroy Claude
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| Villeneuve d'Ascq, : Presses universitaires du Septentrion, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon solid state devices and radiation detection [[electronic resource] /] / Claude Leroy, Pier-Giorgio Rancoita
| Silicon solid state devices and radiation detection [[electronic resource] /] / Claude Leroy, Pier-Giorgio Rancoita |
| Autore | Leroy Claude |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, N. J., : World Scientific Publishing Co. Pte Ltd, c2012 |
| Descrizione fisica | 1 online resource (430 p.) |
| Disciplina | 539.20287 |
| Altri autori (Persone) | RancoitaPier-Giorgio |
| Soggetto topico |
Semiconductor nuclear counters - Design and construction
Semiconductor nuclear counters - Materials Silicon carbide |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-299-28104-4
981-4390-05-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Preface; 1. Interactions of Charged Particles and Photons; 1.1 Passage of Massive Charged Particles Through Matter; 1.1.1 Collision-Loss Processes of Massive Charged Particles; 1.1.1.1 Maximum Transferable Energy to Atomic Electrons; 1.1.1.2 Bragg Curve and Peak; 1.1.1.3 Energy-Loss Minimum, Density Effect and Relativistic Rise; 1.1.1.4 Restricted Energy-Loss and Fermi Plateau; 1.1.1.5 Energy-Loss Fluctuations and the Most Probable Energy-Loss; 1.1.1.6 Improved Energy-Loss Distribution and Effective Most Probable Energy-Loss; 1.1.1.7 Nuclear Energy-Loss of Massive Particles
1.2 Collision and Radiation Energy-Losses of Electrons and Positrons 1.2.1 Collision Losses and the Most Probable Energy-Loss; 1.2.2 Radiation Energy-Losses; 1.3 Nuclear and Non-Ionizing Energy Losses of Electrons; 1.3.1 Scattering Cross Section of Electrons on Nuclei; 1.3.1.1 Interpolated Expression for RMott; 1.3.1.2 Screened Coulomb Potentials; 1.3.1.3 Finite Nuclear Size; 1.3.1.4 Finite Rest Mass of Target Nucleus; 1.3.2 Nuclear Stopping Power of Electrons; 1.3.3 Non-Ionizing Energy-Loss of Electrons; 1.4 Interactions of Photons with Matter; 1.4.1 Photoelectric Effect; 1.4.2 Compton Effect 1.4.3 Pair Production 1.4.3.1 Pair Production in Nuclear and Atomic Electron Fields; 1.4.4 Absorption of Photons in Silicon; 2. Physics and Properties of Silicon Semiconductor; 2.1 Structure and Growth of Silicon Crystals; 2.1.1 Imperfections and Defects in Crystals; 2.2 Energy Band Structure and Energy Gap; 2.2.1 Energy Gap Dependence on Temperature and Pressure in Silicon; 2.2.2 Effective Mass; 2.2.2.1 Conductivity and Density-of-States Effective Masses in Silicon; 2.3 Carrier Concentration and Fermi Level; 2.3.1 Effective Density-of-States 2.3.1.1 Degenerate and Non-Degenerate Semiconductors 2.3.1.2 Intrinsic Fermi-Level and Concentration of Carriers; 2.3.2 Donors and Acceptors; 2.3.2.1 Extrinsic Semiconductors and Fermi Level; 2.3.2.2 Compensated Semiconductors; 2.3.2.3 Maximum Temperature of Operation of Extrinsic Semiconductors; 2.3.2.4 Quasi-Fermi Levels; 2.3.3 Largely Doped and Degenerate Semiconductors; 2.3.3.1 Bandgap Narrowing in Heavily Doped Semiconductors; 2.3.3.2 Reduction of the Impurity Ionization-Energy in Heavily Doped Semiconductors; 3. Transport Phenomena in Semiconductors 3.1 Thermal and Drift Motion in Semiconductors 3.1.1 Drift and Mobility; 3.1.1.1 Mobility in Silicon at High Electric Fields or Up to Large Doping Concentrations; 3.1.2 Resistivity; 3.2 Diffusion Mechanism; 3.2.1 Einstein's Relationship; 3.3 Thermal Equilibrium and Excess Carriers in Semiconductors; 3.3.1 Generation, Recombination Processes, and Carrier Lifetimes; 3.3.1.1 Bulk Processes in Direct Semiconductors; 3.3.1.2 Bulk Processes in Indirect Semiconductors; 3.3.1.3 Surface Recombination; 3.3.1.4 Lifetime of Minority Carriers in Silicon; 3.4 The Continuity Equations 3.4.1 The Dielectric Relaxation Time and Debye Length |
| Record Nr. | UNINA-9910465399903321 |
|
Leroy Claude
|
||
| Singapore ; ; Hackensack, N. J., : World Scientific Publishing Co. Pte Ltd, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon solid state devices and radiation detection [[electronic resource] /] / Claude Leroy, Pier-Giorgio Rancoita
| Silicon solid state devices and radiation detection [[electronic resource] /] / Claude Leroy, Pier-Giorgio Rancoita |
| Autore | Leroy Claude |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, N. J., : World Scientific Publishing Co. Pte Ltd, c2012 |
| Descrizione fisica | 1 online resource (430 p.) |
| Disciplina | 539.20287 |
| Altri autori (Persone) | RancoitaPier-Giorgio |
| Soggetto topico |
Semiconductor nuclear counters - Design and construction
Semiconductor nuclear counters - Materials Silicon carbide |
| ISBN |
1-299-28104-4
981-4390-05-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Preface; 1. Interactions of Charged Particles and Photons; 1.1 Passage of Massive Charged Particles Through Matter; 1.1.1 Collision-Loss Processes of Massive Charged Particles; 1.1.1.1 Maximum Transferable Energy to Atomic Electrons; 1.1.1.2 Bragg Curve and Peak; 1.1.1.3 Energy-Loss Minimum, Density Effect and Relativistic Rise; 1.1.1.4 Restricted Energy-Loss and Fermi Plateau; 1.1.1.5 Energy-Loss Fluctuations and the Most Probable Energy-Loss; 1.1.1.6 Improved Energy-Loss Distribution and Effective Most Probable Energy-Loss; 1.1.1.7 Nuclear Energy-Loss of Massive Particles
1.2 Collision and Radiation Energy-Losses of Electrons and Positrons 1.2.1 Collision Losses and the Most Probable Energy-Loss; 1.2.2 Radiation Energy-Losses; 1.3 Nuclear and Non-Ionizing Energy Losses of Electrons; 1.3.1 Scattering Cross Section of Electrons on Nuclei; 1.3.1.1 Interpolated Expression for RMott; 1.3.1.2 Screened Coulomb Potentials; 1.3.1.3 Finite Nuclear Size; 1.3.1.4 Finite Rest Mass of Target Nucleus; 1.3.2 Nuclear Stopping Power of Electrons; 1.3.3 Non-Ionizing Energy-Loss of Electrons; 1.4 Interactions of Photons with Matter; 1.4.1 Photoelectric Effect; 1.4.2 Compton Effect 1.4.3 Pair Production 1.4.3.1 Pair Production in Nuclear and Atomic Electron Fields; 1.4.4 Absorption of Photons in Silicon; 2. Physics and Properties of Silicon Semiconductor; 2.1 Structure and Growth of Silicon Crystals; 2.1.1 Imperfections and Defects in Crystals; 2.2 Energy Band Structure and Energy Gap; 2.2.1 Energy Gap Dependence on Temperature and Pressure in Silicon; 2.2.2 Effective Mass; 2.2.2.1 Conductivity and Density-of-States Effective Masses in Silicon; 2.3 Carrier Concentration and Fermi Level; 2.3.1 Effective Density-of-States 2.3.1.1 Degenerate and Non-Degenerate Semiconductors 2.3.1.2 Intrinsic Fermi-Level and Concentration of Carriers; 2.3.2 Donors and Acceptors; 2.3.2.1 Extrinsic Semiconductors and Fermi Level; 2.3.2.2 Compensated Semiconductors; 2.3.2.3 Maximum Temperature of Operation of Extrinsic Semiconductors; 2.3.2.4 Quasi-Fermi Levels; 2.3.3 Largely Doped and Degenerate Semiconductors; 2.3.3.1 Bandgap Narrowing in Heavily Doped Semiconductors; 2.3.3.2 Reduction of the Impurity Ionization-Energy in Heavily Doped Semiconductors; 3. Transport Phenomena in Semiconductors 3.1 Thermal and Drift Motion in Semiconductors 3.1.1 Drift and Mobility; 3.1.1.1 Mobility in Silicon at High Electric Fields or Up to Large Doping Concentrations; 3.1.2 Resistivity; 3.2 Diffusion Mechanism; 3.2.1 Einstein's Relationship; 3.3 Thermal Equilibrium and Excess Carriers in Semiconductors; 3.3.1 Generation, Recombination Processes, and Carrier Lifetimes; 3.3.1.1 Bulk Processes in Direct Semiconductors; 3.3.1.2 Bulk Processes in Indirect Semiconductors; 3.3.1.3 Surface Recombination; 3.3.1.4 Lifetime of Minority Carriers in Silicon; 3.4 The Continuity Equations 3.4.1 The Dielectric Relaxation Time and Debye Length |
| Record Nr. | UNINA-9910792056403321 |
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Leroy Claude
|
||
| Singapore ; ; Hackensack, N. J., : World Scientific Publishing Co. Pte Ltd, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Éros géographe / / Claude Leroy
| Éros géographe / / Claude Leroy |
| Autore | Leroy Claude |
| Pubbl/distr/stampa | Villeneuve d'Ascq, : Presses universitaires du Septentrion, 2020 |
| Descrizione fisica | 1 online resource (224 p.) |
| Collana | Objet |
| Soggetto topico |
Literary journeys
Love in literature |
| Soggetto non controllato | Literary studies - Love |
| ISBN | 2-7574-2724-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | fre |
| Record Nr. | UNINA-9910496026203321 |
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Leroy Claude
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| Villeneuve d'Ascq, : Presses universitaires du Septentrion, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Éros géographe
| Éros géographe |
| Autore | Leroy Claude |
| Pubbl/distr/stampa | Presses universitaires du Septentrion, 2010 |
| ISBN |
9782757427248
2757427245 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | fre |
| Record Nr. | UNINA-9910916974203321 |
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Leroy Claude
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| Presses universitaires du Septentrion, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||