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HEMT technology and applications / / editors, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen
| HEMT technology and applications / / editors, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2023] |
| Descrizione fisica | 1 online resource (246 pages) |
| Disciplina | 621.3815284 |
| Collana | Springer tracts in mechanical engineering |
| Soggetto topico | Modulation-doped field-effect transistors |
| ISBN | 981-19-2165-2 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910627239303321 |
| Singapore : , : Springer, , [2023] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Micro and nanoelectronics devices, circuits and systems : select proceedings of MNDCS 2021 / / edited by Trupti Ranjan Lenka, Durgamadhab Misra, Arindam Biswas
| Micro and nanoelectronics devices, circuits and systems : select proceedings of MNDCS 2021 / / edited by Trupti Ranjan Lenka, Durgamadhab Misra, Arindam Biswas |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (496 pages) |
| Disciplina | 621.381 |
| Collana | Lecture notes in electrical engineering |
| Soggetto topico | Microelectronics |
| ISBN |
981-16-3766-0
981-16-3767-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Preface -- Acknowledgements -- Contents -- About the Editors -- Exploiting RF MEMS Switches for Pattern Reconfigurable Parasitic Antennas -- 1 Introduction -- 2 Proposed Antenna Design -- 3 RF MEMS Switch Performance -- 4 Pattern Reconfiguration with RF MEMS Switches -- 5 Numerical Assessment and Discussion of Results -- 6 Conclusions -- References -- Comparative Analysis of Two-Stage Miller Compensated OPAMP in Bulk CMOS and FinFET Technology -- 1 Introduction -- 2 FinFET Device Structure -- 3 Design Methodology of Op-Amp -- 4 Simulation Results -- 5 Conclusion -- References -- Performance-Based Comparative Study on Single- and Dual-Gate OTFT: Modeling and Simulation Using TCAD -- 1 Introduction -- 2 Single-/Dual-Gate Simulation Setup and Extraction of Parameter -- 3 Simulation Results and Discussion -- 3.1 Comparison and Functioning of the Single- and Dual-Gate OTFT -- 3.2 Channel-Length Variation in Single- and Dual-Gate OTFT -- 3.3 Active Layer Thickness Variation in Single- and Dual-Gate OTFT -- 3.4 Dielectric Thickness Variation in Single- and Dual-Gate OTFT -- 4 Conclusion -- References -- Structural and Morphological Properties of Indium-doped Titanium Dioxide Nanoparticles Synthesized Using Sol-gel Process -- 1 Introduction -- 2 Experimental Procedures -- 3 Results and Analysis -- 3.1 X-ray Diffraction (XRD) Investigation -- 3.2 TEM and EDS Analysis -- 3.3 SEM Assessment -- 3.4 Fourier Transform Infrared Spectroscopy (FTIR) Analysis -- 3.5 XPS Analysis -- 4 Conclusions -- References -- Review of Emerging Tunnel FET Structures -- 1 Introduction -- 2 Novel TFET Structure to Boost On Current (ION) and for Ultralow-Power Applications -- 2.1 Surface Tunnel Transistor -- 2.2 Basic p-i-n TFET -- 2.3 Feedback FET -- 2.4 Double-Gate (DG) TEFT -- 2.5 Circular TFET -- 2.6 Heterojunction TEFT -- 2.7 Cylindrical-Gate Tunnel FET (CG-TFET).
2.8 p-n-i-n TFET -- 2.9 p-n-p-n Tunnel FET -- 3 TFET for Low-Power Application -- 3.1 Ultralow-Power and Sensitive UHF RFID Rectifier -- 3.2 nTFET-Based Dynamic Circuit -- 3.3 TFET-Based Pass Transistor Logic (PTL) -- 4 Challenges of TFET -- 4.1 Asymmetrical Structure and Unidirectional Conduction -- 4.2 Point TFET and Line TFET -- 4.3 Raised Miller Capacitance -- 4.4 Delayed Saturation -- 5 Conclusions -- References -- Performance Analysis of Defective 1D Photonic Crystal Structure for Detection of Hemoglobin Concentrations in Blood -- 1 Introduction -- 2 Theoretical Treatment -- 3 Results and Interpretations -- 4 Conclusion -- References -- Comparative Analysis of Different FET-Based Biosensor: Recent Advances in Device Structure and Sensitivity -- 1 Introduction -- 2 Literature Survey -- 3 Biosensor Arrays Using Nano-Wires -- 3.1 Planar Biosensor -- 3.2 Cylindrical Nano-Wire Biosensor -- 3.3 Double Gate FET-Based Biosensor -- 3.4 Extended Gate FET-Based Biosensor -- 4 Conclusion -- References -- Study of Noise Behavior of Heterojunction Double-Gate PNPN TFET for Different Parameter Variations -- 1 Introduction -- 2 Dimension and Simulation Setup of the Proposed Device -- 3 Results and Discussion -- 4 Conclusion -- References -- Analysis of Optical Effects of Different Anodes on Organic Light-Emitting Diode -- 1 Introduction -- 2 Design of Organic Light-Emitting Diode -- 3 Numerical Simulation and Results -- 4 Conclusion -- References -- Analysis and Design of Surface Plasmon Resonance Waveguide for Sensing Application -- 1 Introduction -- 2 Surface Plasmons -- 3 Design and Analysis -- 3.1 Design of SPR Waveguide Sensor -- 4 Result Analysis -- 5 Conclusion -- References -- Iterative Approach for Low Actuation Voltage RF MEMS Switch -- 1 Introduction -- 2 Related Work and Problem Statement -- 3 Mathematical Analysis -- 4 Iterative Approach. 5 Conclusion -- References -- Investigating the Effect of Various Bragg's Reflector Configurations on the Performance of Flexible FBAR Sensors -- 1 Introduction -- 2 Flexible FBAR Structure and Its Operation -- 3 BVD and MBVD Equivalent Models of Flexible FBAR -- 4 Results and Discussions -- 5 Conclusions -- References -- Predictive Analysis of Step-Quantum Well Active Region for Quantum Cascade Detectors -- 1 Introduction -- 2 Theoretical Considerations -- 3 Results and Discussion -- 4 Conclusion -- References -- Design of High Speed and Power Efficient 16 × 8 SRAM Memory Using Improved 4 × 16 Decoder -- 1 Introduction -- 2 Memory -- 2.1 SRAM Cell -- 3 Simulation and Results -- 4 Conclusion -- References -- A Divide-By-5 Pre-scaler Design Approach for 5G Applications -- 1 Introduction -- 2 Divide-By-5 Pre-scaler Architecture -- 2.1 Conventional Architecture -- 2.2 Proposed Architecture -- 3 Design of Delay Cells -- 3.1 Calculation of Wn /Ln of NMOS Transistor from the Current Equation -- 3.2 Calculation of Wp Lp from K Value -- 3.3 Calculation of Wn Ln from Propagation Delay Constraint -- 3.4 Calculation of Wp Lp from Propagation Delay Constraint -- 4 Conclusions -- References -- Analyzing the Effect of Various Reducing Agents and Their Concentrations on Gas Sensing Performance of Graphene Aerogel-Based Ammonia Sensor -- 1 Introduction -- 2 Material Synthesis, Characterization, and Gas Sensing Results -- 3 Conclusions -- References -- Performance Evaluation of Double-Gate Tunnel Field-Effect Transistor with Germanium Epitaxial Layer -- 1 Introduction -- 2 Device Model and Simulation Setup -- 3 ETL-DGTFET Design Concept -- 4 Impact of Structural Variation -- 5 DC Performance Comparison -- 6 Analog/RF Performance -- 7 Conclusion -- References -- Rapid Detection of Biomolecules Using Dielectric Modulated Ferroelectric GaN HEMT -- 1 Introduction. 2 Working Principle -- 3 Device Architecture -- 4 Results and Discussions -- 5 Conclusion -- References -- A Low Leakage with Enhanced Write Margin 10T SRAM Cell for IoT Applications -- 1 Introduction -- 2 10 T SRAM Bit-Cell Working Mechanism -- 2.1 Read Mode -- 2.2 Write Mode -- 2.3 Hold Mode -- 3 Result and Discussion -- 3.1 Read/write Stability -- 3.2 Power Dissipation -- 3.3 Read/write Delay -- 4 Conclusion -- References -- Energy-Efficient Hardware Implementation of K-means Clustering Algorithm -- 1 Introduction -- 2 K-Means Clustering Algorithm -- 3 Random Initialization -- 3.1 Working Principle -- 4 Training -- 4.1 Working Principle -- 5 Testing -- 5.1 Working Principle -- 6 Results and Analysis -- 6.1 Random Initialization -- 6.2 Training -- 6.3 Testing -- 7 Hardware Implementation -- 7.1 Random Initialization -- 7.2 Training/Testing -- 8 Results and Discussion -- 9 Conclusion -- References -- Performance Analysis of HIT-CZTS Tandem Solar Cell Towards Minimizing Current Losses -- 1 Introduction -- 2 Simulation Methodology -- 3 Results and Discussions -- 3.1 EQE Analysis of HIT-CZTS Tandem Solar Cell -- 3.2 Photo Generation and Recombination Profile -- 3.3 Current Densities in the Tandem Solar Cell -- 3.4 Nitride Based Interfacial Layers -- 4 Conclusion -- References -- Triple Linear Congruential Generator-Based Hardware-Efficient Pseudorandom Bit Generation -- 1 Introduction -- 2 Proposed Tri-LCG Method -- 3 Proposed Architecture of Tri-LCG Method -- 4 Results and Discussion -- 4.1 NIST Test Analysis of the Proposed Tri-LCG -- 4.2 VLSI Implementation -- 5 Conclusion -- References -- Flicker Noise Analysis of Non-uniform Body TFET with Dual Material Source (NUTFET-DMS) -- 1 Introduction -- 2 Structure and Simulation Description -- 3 Results and Analysis -- 4 Conclusion -- References. Study of Temperature Effect on MOS-HEMT Small-Signal Parameters -- 1 Introduction -- 2 2-D Structure View and Its Equivalent Circuit -- 3 Temperature Dependent Parameter Modeling -- 4 Results and Discussion -- 5 Conclusion -- References -- Numerical Simulation-Based Comparative Study of FinFET and MOSFET with Gallium Oxide -- 1 Introduction -- 2 Simulation Methods -- 3 Results and Discussion -- 3.1 Planar Vertical MOSFET -- 3.2 FinFET Structure in Vertical Mode -- 4 Conclusion -- References -- Optimization of 2D Ge-Pocket Asymmetric Dual-Gate Tunnel FETs -- 1 Introduction -- 2 Device Structure and Simulation Setup -- 3 Results and Discussion -- 4 Conclusion -- References -- Investigation of Electrical Parameters and Low-Frequency Noise Analysis of a Heterojunction TFET -- 1 Introduction -- 2 Working Principle -- 3 Simulation Format -- 4 Results and Discussion -- 4.1 Effect of Drain Bias -- 4.2 Effect of Source Doping -- 4.3 Effect of Silicon Body Thickness -- 4.4 Influence of Current Noise-Spectral Density on Si Body Thickness -- 5 Conclusion -- References -- Design and Fabrication of a Cost-Effective, Electrochemical Detection-Based, Polymeric Capillary-Electrophoresis Microfluidic Devices for Diverse Bioanalytical Functions -- 1 Introduction -- 2 Device Design and Fabrication -- 2.1 Microchannel Fabrication and Electrode Integration -- 3 Experimental Setup -- 3.1 End Column Detection of the Analyte Detection Instrumentation -- 4 Results and Discussion -- 4.1 Detection of Analyte -- 4.2 End-Channel Amperometric Detection for Microchip Electrophoresis -- 4.3 Separation Efficiency and Limit of Detection -- 5 Conclusion -- References -- Morphological and Optical Analysis of GLAD Synthesize Vertically Oriented TiO2 Nanowires on GaN Substrate for Optoelectronics Application -- 1 Introduction -- 2 Experimental Procedure -- 3 Results and Discussion. 3.1 FE-SEM Analysis. |
| Record Nr. | UNINA-9910743258803321 |
| Singapore : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Micro and nanoelectronics devices, circuits and systems : select proceedings of MNDCS 2022 / / edited by Trupti Ranjan Lenka, Durgamadhab Misra, and Lan Fu
| Micro and nanoelectronics devices, circuits and systems : select proceedings of MNDCS 2022 / / edited by Trupti Ranjan Lenka, Durgamadhab Misra, and Lan Fu |
| Pubbl/distr/stampa | Gateway East, Singapore : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (519 pages) |
| Disciplina | 621.381 |
| Collana | Lecture Notes in Electrical Engineering |
| Soggetto topico |
Nanoelectronics
Microelectronics |
| ISBN | 981-19-2308-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Preface -- Acknowledgements -- Contents -- About the Editors -- Micro/Nanoelectronics Devices -- Development of Ni-Doped Zinc Oxide Films via Sol-Gel Synthesis -- 1 Introduction -- 2 Experimental -- 3 Results and Discussion -- 4 Conclusion -- References -- Modeling and Optimization Study of HIT-CBTSSe Tandem Solar Cell -- 1 Introduction -- 2 Simulation Methodology -- 3 Results and Discussion -- 3.1 Performance Analysis of HIT-CBTSSe Tandem Solar Cell -- 3.2 Photo Generation Rate and Recombination Profile -- 3.3 Electron and Hole Current Densities in Tandem Solar Cell -- 4 Conclusion -- References -- High-k Dielectric Influence on Recessed-Gate Gallium Oxide MOSFETs -- 1 Introduction -- 2 Device Dimension and Simulation Set-up -- 3 Result Analysis -- 3.1 RF Performance -- 4 Conclusion -- References -- Design and Temperature Analysis of Si0.8Ge0.2-Based Extended Gate Gate-All-Around TFET -- 1 Introduction -- 2 Device Design and Simulation Parameters -- 3 Results and Discussion -- 3.1 Temperature's Influence on Linearity Parameters -- 3.2 Influence of Temperature on Device Electrical Performance -- 4 Conclusion -- References -- Optimization of Subthreshold Parameters of Graded-Channel Gate-Stack Double-Gate (GC-GS-DG) MOSFET Using PSO-CFIWA -- 1 Introduction -- 2 Subthreshold Parameters of the Device -- 3 Evolutionary Techniques Employed -- 4 Discussions of Simulation Results -- 5 Conclusion -- References -- A Comparative Study on Electrical Characteristics of Bulk, SOI, and DG MOSFET -- 1 Introduction -- 2 State of Art -- 3 Results and Discussions -- 3.1 Structures -- 3.2 Simulations -- 3.3 Device Characteristics and Calculations -- 4 Comparative Analysis -- 5 Conclusion -- References -- Optical Analysis of Far-Field Intensity on Organic Light-Emitting Diode to Reduce Surface Plasmon Losses -- 1 Introduction.
2 Design of Organic Light-Emitting Diode with Nano-Grated Cathode Structure -- 3 Methodology -- 4 Numerical Simulation and Results -- 5 Conclusion -- References -- Analog Performance of Normally-On Si3N4/AlN/β-Ga2O3 HEMT -- 1 Introduction -- 2 Integrants of Gate Leakage Current -- 3 Device Design, Structure and Simulation Parameters -- 4 Simulation Results and Discussion -- 5 Conclusion -- References -- Modulation of Electronic Properties in Double Quantum Well-Based FET Structure -- 1 Introduction -- 2 Model Development -- 3 Results and Discussion -- 4 Conclusion -- References -- Comparative Analysis of Different Types of Gate Field Plate AlGaN/GaN HEMT -- 1 Introduction -- 2 Device Structure -- 3 Result and Discussion -- 4 Conclusion -- References -- Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron Blocking Layer Free Approach -- 1 Introduction -- 2 Device Structure -- 3 Results and Discussions -- 4 Conclusion -- References -- Investigation on Thermodynamic Properties of Novel Ag2SrSn(S/Se)4 Quaternary Chalcogenide for Solar Cell Applications: A Density Functional Theory Study -- 1 Introduction -- 2 Computational Details -- 3 Results and Discussion -- 3.1 Thermodynamic Properties -- 3.2 Vickers Hardness -- 4 Conclusion -- References -- Impact of Carcinogenic Benzene on Electronic Properties of Mn- and Fe-Doped MoSe2 Monolayer -- 1 Introduction -- 2 Computational Details -- 3 Result and Discussion -- 3.1 Geometrical Information -- 3.2 Adsorption Energy with Charge Transfer -- 4 Recovery Time -- 5 Conclusion -- References -- Growth of Vertical TiO2-Nanowire Photoanode for Application of Dye-Sensitized Solar Cell -- 1 Introduction -- 2 Experimental Details -- 2.1 Materials -- 2.2 Photoanode Preparation -- 2.3 Dye Preparation and Counter Electrode Preparation. 2.4 Fabrication of DSSCs -- 3 Results and Discussion -- 3.1 Sample Structural Analysis -- 3.2 UV-Vis Spectroscopy and Photoluminescence Spectroscopy -- 3.3 Device Characterization -- 4 Conclusion -- References -- Multiband Photodetection Using TiO2 Thin Film Deposited on Si Substrate Using E-beam Evaporation Technique -- 1 Introduction -- 2 Experimental Details -- 3 Results and Discussion -- 3.1 XRD Analysis -- 3.2 Optical Properties Analysis -- 3.3 Photodetector Device Analysis -- 4 Conclusion -- References -- Evolution of Tunnel Field-Effect Transistor and Scope in Low Power Applications: A Detailed Review -- 1 Introduction -- 2 Latest Tunnel FET Architectures -- 3 Comparative Analysis -- 4 Conclusion -- References -- Design and Analysis of Non-uniform Body with Dual Material FET-Based Digital Inverter -- 1 Introduction -- 2 Device Structure -- 3 Simulation Methodologies -- 4 Results and Discussion -- 5 Conclusion -- References -- Performance Analysis of Metal-Ferroelectric-Insulator-Semiconductor Negative Capacitance FET for Various Channel Materials -- 1 Introduction -- 2 Device Structure and Simulation -- 3 Results and Discussion -- 4 Conclusion -- References -- Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications -- 1 Introduction -- 2 Device Dimensions and Simulation Setup -- 2.1 Single Gate MOSHEMT with Tapered Oxide -- 2.2 Single Gate MOSHEMT with a Tapered Dielectric and a Cavity Under the Gate -- 3 Results and Discussions -- 3.1 Device Calibration -- 3.2 Single Gate MOSHEMT with a Tapered Dielectric -- 4 Conclusion -- References -- Carrier Transport and Radiative Recombination Rate Enhancement in GaN/AlGaN Multiple Quantum Well UV-LED Using Band Engineering for Light Technology -- 1 Introduction -- 2 Device Structure and Numerical Framework. 3 Results and Analysis -- 4 Conclusion -- References -- Comparative Study of Electrical Performances of Bio-Electrochemical Cell -- 1 Introduction -- 2 Materials and Methods -- 3 Experimental Setup of Cells -- 4 Chemical Reactions of Bio-Electrochemical Cells -- 5 Results and Discussions -- 5.1 Open-Circuit Voltage of Cells -- 5.2 Short-Circuit Current -- 5.3 Capacity of Cells -- 5.4 Maximum Power (Pmax) of Cells -- 5.5 Average Performances of Cells -- 6 Conclusion -- References -- Performance Evaluation of Silver-Doped CZTSe Kesterite Solar Cell with p+-CZTSe as BSF Layer -- 1 Introduction -- 2 Device Structure -- 3 Result and Analysis -- 4 Conclusion -- References -- Design and Simulation of Si and Ge Double-Gate Tunnel Field-Effect Transistors with High-κ Al2O3 Gate Dielectric: DC and RF Analysis -- 1 Introduction -- 2 Device Structure and Simulation Setup -- 3 Results and Discussions -- 3.1 DC Performance -- 3.2 RF Performance -- 4 Conclusion -- References -- Performance Assessment of Electrostatically Doped Dual Pocket Vertical Tunnel Field-Effect Transistor -- 1 Introduction -- 2 Structural Descriptions with Simulation Approach -- 3 Results and Discussions -- 3.1 Evaluation of Short-Channel Effects (SCE) Parameters -- 3.2 Analog Performance Analysis -- 3.3 Impact for Variation of k of Oxide Layer -- 3.4 RF Performance Analysis -- 3.5 Impact for Variation of k of Oxide Layer -- 4 Performance Assessment Between L-TFET, SP-TFET, and Proposed Model -- 5 Conclusion -- References -- A High Efficiency Class AB AlGaN/GaN HEMT Power Amplifier for High Frequency Applications -- 1 Introduction -- 2 Desirable Properties of GaN -- 2.1 High Saturation Velocity -- 3 HEMT Structure and Its Working -- 3.1 Hetero-Structure -- 3.2 2-Dimensional Electron Gas (2DEG) -- 3.3 Working Principle -- 4 HEMT as Power Amplifier -- 5 Design and Simulation Results. 6 Conclusion -- References -- The Anisotropy and Birefringence of Monolayer WS2 Semiconductor -- 1 Introduction -- 2 Methodology -- 3 Results and Discussion -- 3.1 Electronic and Optical Properties -- 4 Conclusions -- References -- Implementation of Zinc Sulfide (ZnS) as a Suitable Buffer Layer for CZTS Solar Cell from Numerical Analysis -- 1 Introduction -- 2 Device Structure and Approach -- 3 Results and Discussion -- 3.1 Deviation of Absorber Layer Thickness -- 3.2 Variation of ZnS Buffer-Layer Thickness -- 3.3 Effect of ZnS-Layer Bandgap -- 3.4 Temperature Effects -- 4 Conclusion -- References -- The Effect of Quantum Well Base in GaAs-Based HBT -- 1 Introduction -- 2 Schematic Design of the Proposed QWBHBT -- 3 Results and Discussion -- 3.1 DC Characteristics -- 3.2 I-V Characteristics -- 3.3 Small Signal Characteristics -- 3.4 Minimum Noise Figure -- 4 Simulation-Based Comparison Analysis -- 5 Conclusion -- References -- Micro/Nanoelectronics Circuits -- Power and Area Trade-Off for Accuracy-Controlled Multiplier for Image Compression Using DCT -- 1 Introduction -- 2 Literature Review -- 3 Accuracy-Controlled Multiplier (ACM) -- 4 Simulation Results -- 4.1 Implementation and Functional Verification -- 4.2 Synthesis -- 5 Experimental Setup DCT -- 6 Result and Discussion -- 7 Conclusion -- References -- Carry Select Adder Using Binary Excess-1 Converter and Ripple Carry Adder -- 1 Introduction -- 2 Literature Survey -- 3 Existing Technique -- 4 Proposed Technique -- 5 Results and Discussions -- 6 Conclusion -- References -- Design and Analysis CMOS-Based DRAM Cell Structures for High-Performance Embedded System -- 1 Introduction -- 2 Dynamic Memory -- 2.1 Two-Transistor DRAM -- 2.2 Three-Transistor DRAM -- 2.3 Four-Transistor DRAM -- 3 Three-Transistor and One-Diode DRAM -- 4 Performance Parameter Analysis -- 5 Conclusion -- References. Optimized RTL Design of a Vending Machine Through FSM Using Verilog HDL. |
| Record Nr. | UNINA-9910627245603321 |
| Gateway East, Singapore : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||