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Advanced integrated communication microsystems / / Joy Laskar ... [et al.]
| Advanced integrated communication microsystems / / Joy Laskar ... [et al.] |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : IEEE Press, , c2009 |
| Descrizione fisica | 1 online resource (495 p.) |
| Disciplina |
621.382
621.384 |
| Altri autori (Persone) | LaskarJoy |
| Collana | Wiley series in microwave and optical engineering |
| Soggetto topico |
Radio - Transmitters and transmission
Radio - Receivers and reception Radio frequency integrated circuits Wireless communication systems - Equipment and supplies |
| ISBN |
1-282-02210-5
9786612022104 0-470-40979-7 0-470-40978-9 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Fundamental concepts and background -- Wireless communication system architectures -- System architecture for high-speed wired communications -- Mixed building blocks of signal communication systems -- Examples of integrated communication microsystems -- Low-voltage, low-power, and low-area designs -- Packaging for integrated communication microsystems -- Advanced SOP components and signal processing -- Simulation and characterization of integrated microsystems -- Appendix : A compendium of the TRL calibration algorithm. |
| Record Nr. | UNINA-9910146120403321 |
| Hoboken, New Jersey : , : IEEE Press, , c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced integrated communication microsystems / / Joy Laskar ... [et al.]
| Advanced integrated communication microsystems / / Joy Laskar ... [et al.] |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : IEEE Press, , c2009 |
| Descrizione fisica | 1 online resource (495 p.) |
| Disciplina |
621.382
621.384 |
| Altri autori (Persone) | LaskarJoy |
| Collana | Wiley series in microwave and optical engineering |
| Soggetto topico |
Radio - Transmitters and transmission
Radio - Receivers and reception Radio frequency integrated circuits Wireless communication systems - Equipment and supplies |
| ISBN |
1-282-02210-5
9786612022104 0-470-40979-7 0-470-40978-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Fundamental concepts and background -- Wireless communication system architectures -- System architecture for high-speed wired communications -- Mixed building blocks of signal communication systems -- Examples of integrated communication microsystems -- Low-voltage, low-power, and low-area designs -- Packaging for integrated communication microsystems -- Advanced SOP components and signal processing -- Simulation and characterization of integrated microsystems -- Appendix : A compendium of the TRL calibration algorithm. |
| Record Nr. | UNISA-996217503703316 |
| Hoboken, New Jersey : , : IEEE Press, , c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Advanced integrated communication microsystems / / Joy Laskar ... [et al.]
| Advanced integrated communication microsystems / / Joy Laskar ... [et al.] |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : IEEE Press, , c2009 |
| Descrizione fisica | 1 online resource (495 p.) |
| Disciplina |
621.382
621.384 |
| Altri autori (Persone) | LaskarJoy |
| Collana | Wiley series in microwave and optical engineering |
| Soggetto topico |
Radio - Transmitters and transmission
Radio - Receivers and reception Radio frequency integrated circuits Wireless communication systems - Equipment and supplies |
| ISBN |
1-282-02210-5
9786612022104 0-470-40979-7 0-470-40978-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Fundamental concepts and background -- Wireless communication system architectures -- System architecture for high-speed wired communications -- Mixed building blocks of signal communication systems -- Examples of integrated communication microsystems -- Low-voltage, low-power, and low-area designs -- Packaging for integrated communication microsystems -- Advanced SOP components and signal processing -- Simulation and characterization of integrated microsystems -- Appendix : A compendium of the TRL calibration algorithm. |
| Record Nr. | UNINA-9910830292603321 |
| Hoboken, New Jersey : , : IEEE Press, , c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Compact Ku-band transmitter design for satellite communication applications [[electronic resource] ] : from system analysis to hardware implementation / / Chang-Ho Lee, Joy Laskar
| Compact Ku-band transmitter design for satellite communication applications [[electronic resource] ] : from system analysis to hardware implementation / / Chang-Ho Lee, Joy Laskar |
| Autore | Lee Chang-Ho |
| Edizione | [1st ed. 2002.] |
| Pubbl/distr/stampa | Boston, : Kluwer Academic Publishers, c2002 |
| Descrizione fisica | 1 online resource (178 p.) |
| Disciplina | 621.384/131 |
| Altri autori (Persone) | LaskarJoy |
| Soggetto topico |
Artificial satellites in telecommunication
Radio - Transmitters and transmission |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-20017-0
9786610200177 0-306-47530-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Ku-band Transmitter Architecture -- Transmitter System Simulation Model -- Review of Ku-band Mixers -- Review of Ku-band VCOs -- Transmitter MMIC for Satellite Communication Applications -- Transmitter Module Design -- Conclusion. |
| Record Nr. | UNINA-9910454803503321 |
Lee Chang-Ho
|
||
| Boston, : Kluwer Academic Publishers, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Compact Ku-band transmitter design for satellite communication applications [[electronic resource] ] : from system analysis to hardware implementation / / Chang-Ho Lee, Joy Laskar
| Compact Ku-band transmitter design for satellite communication applications [[electronic resource] ] : from system analysis to hardware implementation / / Chang-Ho Lee, Joy Laskar |
| Autore | Lee Chang-Ho |
| Edizione | [1st ed. 2002.] |
| Pubbl/distr/stampa | Boston, : Kluwer Academic Publishers, c2002 |
| Descrizione fisica | 1 online resource (178 p.) |
| Disciplina | 621.384/131 |
| Altri autori (Persone) | LaskarJoy |
| Soggetto topico |
Artificial satellites in telecommunication
Radio - Transmitters and transmission |
| ISBN |
1-280-20017-0
9786610200177 0-306-47530-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Ku-band Transmitter Architecture -- Transmitter System Simulation Model -- Review of Ku-band Mixers -- Review of Ku-band VCOs -- Transmitter MMIC for Satellite Communication Applications -- Transmitter Module Design -- Conclusion. |
| Record Nr. | UNINA-9910780038603321 |
|
Lee Chang-Ho
|
||
| Boston, : Kluwer Academic Publishers, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Compact Ku-band transmitter design for satellite communication applications [[electronic resource] ] : from system analysis to hardware implementation / / Chang-Ho Lee, Joy Laskar
| Compact Ku-band transmitter design for satellite communication applications [[electronic resource] ] : from system analysis to hardware implementation / / Chang-Ho Lee, Joy Laskar |
| Autore | Lee Chang-Ho |
| Edizione | [1st ed. 2002.] |
| Pubbl/distr/stampa | Boston, : Kluwer Academic Publishers, c2002 |
| Descrizione fisica | 1 online resource (178 p.) |
| Disciplina | 621.384/131 |
| Altri autori (Persone) | LaskarJoy |
| Soggetto topico |
Artificial satellites in telecommunication
Radio - Transmitters and transmission |
| ISBN |
1-280-20017-0
9786610200177 0-306-47530-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Ku-band Transmitter Architecture -- Transmitter System Simulation Model -- Review of Ku-band Mixers -- Review of Ku-band VCOs -- Transmitter MMIC for Satellite Communication Applications -- Transmitter Module Design -- Conclusion. |
| Record Nr. | UNINA-9910816859503321 |
|
Lee Chang-Ho
|
||
| Boston, : Kluwer Academic Publishers, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Modeling and design techniques for RF power amplifiers [[e-book] /] / Arvind Raghavan, Nuttapong Srirattana, Joy Laskar
| Modeling and design techniques for RF power amplifiers [[e-book] /] / Arvind Raghavan, Nuttapong Srirattana, Joy Laskar |
| Autore | Raghavan Arvind |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : Wiley-Interscience, , c2008 |
| Descrizione fisica | 1 online resource (220 p.) |
| Disciplina | 621.384/12 |
| Altri autori (Persone) |
LaskarJoy
SrirattanaNuttapong |
| Soggetto topico |
Power amplifiers - Design and construction
Amplifiers, Radio frequency |
| ISBN |
1-281-20401-3
9786611204013 0-470-22831-8 0-470-22830-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
PREFACE ix -- 1 INTRODUCTION 1 -- 1.1 Semiconductor Technology and RF Power Amplifier Design 2 -- 1.2 Device Modeling 3 -- 1.3 Power Amplifier IC Design 4 -- 1.4 Power Amplifier Linearity 5 -- 1.5 Modulation Schemes 5 -- 1.6 Circuit Simulation 9 -- 1.7 Load-Pull Measurements 10 -- References 13 -- 2 DEVICE MODELING FOR CAD 15 -- 2.1 Introduction 15 -- 2.2 Bipolar Junction and Weterojunction Bipolar Transistors 16 -- 2.3 Bipolar Device Models 18 -- 2.3.1 The Ebers-Moll Model 18 -- 2.3.2 The Gummel-Poon Model 20 -- 2.3.3 The VBlC Model 25 -- 2.3.4 MEXTRAM 29 -- 2.3.5 HICUM 32 -- 2.4 MOSFET Device Physics 35 -- 2.5 MOSFET Device Models 38 -- 2.5.1 The Level 1 Model 38 -- 2.5.2 The Level 2 and Level 3 Models 40 -- 2.5.3 BSlM 40 -- 2.5.4 The BSIM2 and HSPICE Level 28 Models 43 -- 2.5.5 BSIM3 44 -- 2.5.6 MOS Model 9 and MOS Model 11 45 -- 2.5.7 BSIM4 45 -- References 46 -- 3 EMPIRICAL MODELING OF BIPOLAR DEVICES 49 -- 3.1 Introduction 49 -- 3.1.1 Modeling the HBT versus the BJT 49 -- 3.1.2 Parameter Extraction 50 -- 3.1.3 Motivation for an Empirical Bipolar Device Model 51 -- 3.1.4 Physics-Based and Empirical Models 53 -- 3.1.5 Compatibility between Large- and Small-Signal Models 53 -- 3.2 Model Construction and Parameter Extraction 54 -- 3.2.1 Current Source Model 54 -- 3.2.2 Current Source Model Parameter Extraction 56 -- 3.2.3 Extraction of Intrinsic Capacitances 58 -- 3.2.4 Extraction of Base Resistance 60 -- 3.2.5 Parameter Extraction Procedure 61 -- 3.3 Temperature-Dependent InGaP/GaAs HBT Large-Signal Model 63 -- 3.4 Empirical Si BJT Large-Signal Model 71 -- 3.5 Extension of the Empirical Modeling Method to the SiGe HBT 77 -- 3.6 Summary 83 -- References 83 -- 4 SCALABLE MODELING OF RF MOSFETS 87 -- 4.1 Introduction 87 -- 4.1.1 NQS Effects 88 -- 4.1.2 Distributed Gate Resistance 89 -- 4.1.3 Distributed Substrate Resistance 89 -- 4.2 Scalable Modified BSIM3v3 Model 91 -- 4.2.1 Scalability of MOSFET Model 91 -- 4.2.2 Extraction of Small-Signal Model Parameters 94 -- 4.2.3 Scalable Substrate Network Modeling 101.
4.2.4 Modified BSIM3v3 Model 116 -- 4.3 Summary 120 -- References 120 -- 5 POWER AMPLIFIEIR IC DESIGN 123 -- 5.1 Introduction 123 -- 5.2 Power Amplifier Design Methodology 124 -- 5.3 Classes of Operation 125 -- 5.4 Performance Metrics 132 -- 5.5 Thermal Instability and Ballasting 136 -- References 138 -- 6 POWER AMPLIFIER DESIGN IN SILICON 141 -- 6.1 Introduction 141 -- 6.2 A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier 142 -- 6.2.1 Circuit Design Considerations 143 -- 6.2.2 Analysis of Ballasting for SiGe HBT Power Amplifiers 146 -- 6.2.3 Harmonic Suppression Filter and Output Match Network 148 -- 6.2.4 Performance of the Power Amplifier Module 150 -- 6.3 RF Power Amplifier Design Using Device Periphery Adjustment 153 -- 6.3.1 Analysis of the Device Periphery Adjustment Technique 155 -- 6.3.2 1.9-GHz CMOS Power Amplifier 157 -- 6.3.3 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier 162 -- 6.3.4 Nonlinear Term Cancellation for Linearity Improvement 166 -- References 169 -- 7 EFFICIENCY ENHANCEMENT OF RF POWER AMPLIFIERS 173 -- 7.1 Introduction 173 -- 7.2 Efficiency Enhancement Techniques 174 -- 7.2.1 Envelope Elimination and Restoration 174 -- 7.2.2 Bias Adaptation 175 -- 7.2.3 The Doherty Amplifier Technique 175 -- 7.2.4 Chireix's Outphasing Amplifier Technique 176 -- 7.3 The Classical Doherty Amplifier 179 -- 7.4 The Multistage Doherty Amplifier 181 -- 7.4.1 Principle of Operation 181 -- 7.4.2 Analysis of Efficiency 186 -- 7.4.3 Practical Considerations 188 -- 7.4.4 Measurement Results 190 -- References 198 -- INDEX 199. |
| Record Nr. | UNINA-9910145749803321 |
|
Raghavan Arvind
|
||
| Hoboken, New Jersey : , : Wiley-Interscience, , c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Modeling and design techniques for RF power amplifiers [[e-book] /] / Arvind Raghavan, Nuttapong Srirattana, Joy Laskar
| Modeling and design techniques for RF power amplifiers [[e-book] /] / Arvind Raghavan, Nuttapong Srirattana, Joy Laskar |
| Autore | Raghavan Arvind |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : Wiley-Interscience, , c2008 |
| Descrizione fisica | 1 online resource (220 p.) |
| Disciplina | 621.384/12 |
| Altri autori (Persone) |
LaskarJoy
SrirattanaNuttapong |
| Soggetto topico |
Power amplifiers - Design and construction
Amplifiers, Radio frequency |
| ISBN |
1-281-20401-3
9786611204013 0-470-22831-8 0-470-22830-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
PREFACE ix -- 1 INTRODUCTION 1 -- 1.1 Semiconductor Technology and RF Power Amplifier Design 2 -- 1.2 Device Modeling 3 -- 1.3 Power Amplifier IC Design 4 -- 1.4 Power Amplifier Linearity 5 -- 1.5 Modulation Schemes 5 -- 1.6 Circuit Simulation 9 -- 1.7 Load-Pull Measurements 10 -- References 13 -- 2 DEVICE MODELING FOR CAD 15 -- 2.1 Introduction 15 -- 2.2 Bipolar Junction and Weterojunction Bipolar Transistors 16 -- 2.3 Bipolar Device Models 18 -- 2.3.1 The Ebers-Moll Model 18 -- 2.3.2 The Gummel-Poon Model 20 -- 2.3.3 The VBlC Model 25 -- 2.3.4 MEXTRAM 29 -- 2.3.5 HICUM 32 -- 2.4 MOSFET Device Physics 35 -- 2.5 MOSFET Device Models 38 -- 2.5.1 The Level 1 Model 38 -- 2.5.2 The Level 2 and Level 3 Models 40 -- 2.5.3 BSlM 40 -- 2.5.4 The BSIM2 and HSPICE Level 28 Models 43 -- 2.5.5 BSIM3 44 -- 2.5.6 MOS Model 9 and MOS Model 11 45 -- 2.5.7 BSIM4 45 -- References 46 -- 3 EMPIRICAL MODELING OF BIPOLAR DEVICES 49 -- 3.1 Introduction 49 -- 3.1.1 Modeling the HBT versus the BJT 49 -- 3.1.2 Parameter Extraction 50 -- 3.1.3 Motivation for an Empirical Bipolar Device Model 51 -- 3.1.4 Physics-Based and Empirical Models 53 -- 3.1.5 Compatibility between Large- and Small-Signal Models 53 -- 3.2 Model Construction and Parameter Extraction 54 -- 3.2.1 Current Source Model 54 -- 3.2.2 Current Source Model Parameter Extraction 56 -- 3.2.3 Extraction of Intrinsic Capacitances 58 -- 3.2.4 Extraction of Base Resistance 60 -- 3.2.5 Parameter Extraction Procedure 61 -- 3.3 Temperature-Dependent InGaP/GaAs HBT Large-Signal Model 63 -- 3.4 Empirical Si BJT Large-Signal Model 71 -- 3.5 Extension of the Empirical Modeling Method to the SiGe HBT 77 -- 3.6 Summary 83 -- References 83 -- 4 SCALABLE MODELING OF RF MOSFETS 87 -- 4.1 Introduction 87 -- 4.1.1 NQS Effects 88 -- 4.1.2 Distributed Gate Resistance 89 -- 4.1.3 Distributed Substrate Resistance 89 -- 4.2 Scalable Modified BSIM3v3 Model 91 -- 4.2.1 Scalability of MOSFET Model 91 -- 4.2.2 Extraction of Small-Signal Model Parameters 94 -- 4.2.3 Scalable Substrate Network Modeling 101.
4.2.4 Modified BSIM3v3 Model 116 -- 4.3 Summary 120 -- References 120 -- 5 POWER AMPLIFIEIR IC DESIGN 123 -- 5.1 Introduction 123 -- 5.2 Power Amplifier Design Methodology 124 -- 5.3 Classes of Operation 125 -- 5.4 Performance Metrics 132 -- 5.5 Thermal Instability and Ballasting 136 -- References 138 -- 6 POWER AMPLIFIER DESIGN IN SILICON 141 -- 6.1 Introduction 141 -- 6.2 A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier 142 -- 6.2.1 Circuit Design Considerations 143 -- 6.2.2 Analysis of Ballasting for SiGe HBT Power Amplifiers 146 -- 6.2.3 Harmonic Suppression Filter and Output Match Network 148 -- 6.2.4 Performance of the Power Amplifier Module 150 -- 6.3 RF Power Amplifier Design Using Device Periphery Adjustment 153 -- 6.3.1 Analysis of the Device Periphery Adjustment Technique 155 -- 6.3.2 1.9-GHz CMOS Power Amplifier 157 -- 6.3.3 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier 162 -- 6.3.4 Nonlinear Term Cancellation for Linearity Improvement 166 -- References 169 -- 7 EFFICIENCY ENHANCEMENT OF RF POWER AMPLIFIERS 173 -- 7.1 Introduction 173 -- 7.2 Efficiency Enhancement Techniques 174 -- 7.2.1 Envelope Elimination and Restoration 174 -- 7.2.2 Bias Adaptation 175 -- 7.2.3 The Doherty Amplifier Technique 175 -- 7.2.4 Chireix's Outphasing Amplifier Technique 176 -- 7.3 The Classical Doherty Amplifier 179 -- 7.4 The Multistage Doherty Amplifier 181 -- 7.4.1 Principle of Operation 181 -- 7.4.2 Analysis of Efficiency 186 -- 7.4.3 Practical Considerations 188 -- 7.4.4 Measurement Results 190 -- References 198 -- INDEX 199. |
| Record Nr. | UNINA-9910826135603321 |
|
Raghavan Arvind
|
||
| Hoboken, New Jersey : , : Wiley-Interscience, , c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||