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A FORTRAN program for calculating the electrical parameters of extrinsic silicon / / R. D. Larrabee, W. R. Thurber, W. Murray Bullis
| A FORTRAN program for calculating the electrical parameters of extrinsic silicon / / R. D. Larrabee, W. R. Thurber, W. Murray Bullis |
| Autore | Larrabee R. D |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1980 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
BullisW. Murray
LarrabeeR. D ThurberW. Robert |
| Collana | NBS special publication |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910709505703321 |
Larrabee R. D
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1980 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Measurement techniques for high-resistivity detector-grade silicon : progress report, July 1, 1982 to June 30, 1983 / / R. D. Larrabee; J. R. Lowney
| Measurement techniques for high-resistivity detector-grade silicon : progress report, July 1, 1982 to June 30, 1983 / / R. D. Larrabee; J. R. Lowney |
| Autore | Larrabee R. D |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1983 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) | LarrabeeR. D |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Measurement techniques for high-resistivity detector-grade silicon |
| Record Nr. | UNINA-9910710202503321 |
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Larrabee R. D
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1983 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nondestructive evaluation activities in the Semiconductor Materials and Processes Division / / R. D. Larrabee; M. I. Bell
| Nondestructive evaluation activities in the Semiconductor Materials and Processes Division / / R. D. Larrabee; M. I. Bell |
| Autore | Larrabee R. D |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1986 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
BellMichael I
LarrabeeR. D |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910710535803321 |
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Larrabee R. D
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1986 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Theory and application of a two-layer hall technique / / R. D. Larrabee; W. R. Thurber
| Theory and application of a two-layer hall technique / / R. D. Larrabee; W. R. Thurber |
| Autore | Larrabee R. D |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1978 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
LarrabeeR. D
ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910709911903321 |
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Larrabee R. D
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1978 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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