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Lithography [[electronic resource] ] : main techniques / / edited by Stefan Landis
Lithography [[electronic resource] ] : main techniques / / edited by Stefan Landis
Pubbl/distr/stampa London, : ISTE
Descrizione fisica 1 online resource (405 p.)
Disciplina 621.3815/31
Altri autori (Persone) LandisStefan
Collana ISTE
Soggetto topico Microlithography
ISBN 1-118-55766-2
1-299-31552-6
1-118-62123-9
Classificazione TEC021000
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Title Page; Copyright Page; Table of Contents; Foreword; Introduction; Chapter 1. Photolithography; 1.1. Introduction; 1.2. Principles and technology of scanners; 1.2.1. Illumination; 1.2.2. The mask or reticle; 1.2.3. Projection optics; 1.2.4. Repeated projection and scanning projection; 1.3. Lithography processes; 1.3.1. Anti-reflective coating; 1.3.2. Resists; 1.3.3. Barrier layers or ""top coating""; 1.4. Immersion photolithography; 1.4.1. Immersion lithography; 1.4.2. Resolution improvement; 1.4.3. Relevance of immersion lithography; 1.4.4. Immersion liquids
1.4.5. Immersion scanners1.4.6. Immersion specific constraints and issues; 1.5. Image formation; 1.6. Lithography performances enhancement techniques; 1.6.1. Off axis illumination (OAI); 1.6.2. Optical proximity corrections (OPC); 1.6.3. Phase shift masks (PSM); 1.7. Contrast; 1.7.1. Polarized light contrast; 1.7.2. Influence of contrast on roughness; 1.8. Bibliography; Chapter 2. Extreme Ultraviolet Lithography; 2.1. Introduction to extreme ultraviolet lithography; 2.1.1. Chapter introduction
2.1.2. Extreme ultraviolet lithography: the successor of optical lithography at 248 nm and 193 nm wavelengths2.1.3. The spectral range of extreme ultraviolet; 2.1.4. Choice of wavelength and resolution limit for EUV lithography; 2.2. The electromagnetic properties of materials and the complex index; 2.2.1. Wave vector and complex index; 2.2.2. Scattering and absorption: the electromagnetic origin of the refractive index; 2.2.3. Light propagation and refractive index; 2.2.4. Reflection and transmission of a monochromatic wave; 2.3. Reflective optical elements for EUV lithography
2.3.1. The interferential mirror principle: Bragg structure2.3.2. Reflective optics: conception and fabrication; 2.3.3. Projection optics for EUV lithography; 2.4. Reflective masks for EUV lithography; 2.4.1. Different mask types; 2.4.2. Manufacturing processes for EUV masks; 2.4.3. Mask defectivity; 2.5. Modeling and simulation for EUV lithography; 2.5.1. Simulation, a conceptional tool; 2.5.2. Simulation methods; 2.6. EUV lithography sources; 2.6.1. Constitutive elements of a plasma source; 2.6.2. Specifications for an EUV source; 2.6.3. EUV sources; 2.7. Conclusion
2.8. Appendix: Kramers-Krönig relationship2.9. Bibliography; Chapter 3. Electron Beam Lithography; 3.1. Introduction; 3.2. Different equipment, its operation and limits: current and future solutions; 3.2.1. Gaussian beam; 3.2.2. Shaped electron beam; 3.2.3. Multi-electron beam; 3.3. Maskless photolithography; 3.3.1. Optical lithography without a mask; 3.3.2. Charged particle maskless lithography; 3.4. Alignment; 3.5. Electron-sensitive resists; 3.6. Electron-matter interaction; 3.7. Physical effect of electronic bombardment in the target; 3.7.1. Polymerizing, chemical bond breaking
3.7.2. Thermal effect
Record Nr. UNINA-9910139244403321
London, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Lithography : main techniques / / edited by Stefan Landis
Lithography : main techniques / / edited by Stefan Landis
Edizione [1st ed.]
Pubbl/distr/stampa London, : ISTE
Descrizione fisica 1 online resource (405 p.)
Disciplina 621.3815/31
Altri autori (Persone) LandisStefan
Collana ISTE
Soggetto topico Microlithography
ISBN 1-118-55766-2
1-299-31552-6
1-118-62123-9
Classificazione TEC021000
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Title Page; Copyright Page; Table of Contents; Foreword; Introduction; Chapter 1. Photolithography; 1.1. Introduction; 1.2. Principles and technology of scanners; 1.2.1. Illumination; 1.2.2. The mask or reticle; 1.2.3. Projection optics; 1.2.4. Repeated projection and scanning projection; 1.3. Lithography processes; 1.3.1. Anti-reflective coating; 1.3.2. Resists; 1.3.3. Barrier layers or ""top coating""; 1.4. Immersion photolithography; 1.4.1. Immersion lithography; 1.4.2. Resolution improvement; 1.4.3. Relevance of immersion lithography; 1.4.4. Immersion liquids
1.4.5. Immersion scanners1.4.6. Immersion specific constraints and issues; 1.5. Image formation; 1.6. Lithography performances enhancement techniques; 1.6.1. Off axis illumination (OAI); 1.6.2. Optical proximity corrections (OPC); 1.6.3. Phase shift masks (PSM); 1.7. Contrast; 1.7.1. Polarized light contrast; 1.7.2. Influence of contrast on roughness; 1.8. Bibliography; Chapter 2. Extreme Ultraviolet Lithography; 2.1. Introduction to extreme ultraviolet lithography; 2.1.1. Chapter introduction
2.1.2. Extreme ultraviolet lithography: the successor of optical lithography at 248 nm and 193 nm wavelengths2.1.3. The spectral range of extreme ultraviolet; 2.1.4. Choice of wavelength and resolution limit for EUV lithography; 2.2. The electromagnetic properties of materials and the complex index; 2.2.1. Wave vector and complex index; 2.2.2. Scattering and absorption: the electromagnetic origin of the refractive index; 2.2.3. Light propagation and refractive index; 2.2.4. Reflection and transmission of a monochromatic wave; 2.3. Reflective optical elements for EUV lithography
2.3.1. The interferential mirror principle: Bragg structure2.3.2. Reflective optics: conception and fabrication; 2.3.3. Projection optics for EUV lithography; 2.4. Reflective masks for EUV lithography; 2.4.1. Different mask types; 2.4.2. Manufacturing processes for EUV masks; 2.4.3. Mask defectivity; 2.5. Modeling and simulation for EUV lithography; 2.5.1. Simulation, a conceptional tool; 2.5.2. Simulation methods; 2.6. EUV lithography sources; 2.6.1. Constitutive elements of a plasma source; 2.6.2. Specifications for an EUV source; 2.6.3. EUV sources; 2.7. Conclusion
2.8. Appendix: Kramers-Krönig relationship2.9. Bibliography; Chapter 3. Electron Beam Lithography; 3.1. Introduction; 3.2. Different equipment, its operation and limits: current and future solutions; 3.2.1. Gaussian beam; 3.2.2. Shaped electron beam; 3.2.3. Multi-electron beam; 3.3. Maskless photolithography; 3.3.1. Optical lithography without a mask; 3.3.2. Charged particle maskless lithography; 3.4. Alignment; 3.5. Electron-sensitive resists; 3.6. Electron-matter interaction; 3.7. Physical effect of electronic bombardment in the target; 3.7.1. Polymerizing, chemical bond breaking
3.7.2. Thermal effect
Record Nr. UNINA-9910807658503321
London, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nano-lithography [[electronic resource] /] / edited by Stefan Landis
Nano-lithography [[electronic resource] /] / edited by Stefan Landis
Autore Landis Stefan
Edizione [1st edition]
Pubbl/distr/stampa London, : ISTE
Descrizione fisica 1 online resource (353 p.)
Disciplina 621.381531
Altri autori (Persone) LandisStefan
Collana ISTE
Soggetto topico Nanolithography
Soggetto genere / forma Electronic books.
ISBN 1-118-62170-0
1-118-62258-8
1-299-31558-5
1-118-62162-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Ch. 1. X-ray lithography : fundamentals and applications -- ch. 2. NanoImprint lithography -- ch. 3. Lithography techniques using scanning probe microscopy -- ch. 4. Lithography and manipulation based on the optical properties of metal nanostructures -- ch. 5. Patterning with self-assembling block copolymers -- ch. 6. Metrology for lithography.
Record Nr. UNINA-9910139242703321
Landis Stefan  
London, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nano-lithography [[electronic resource] /] / edited by Stefan Landis
Nano-lithography [[electronic resource] /] / edited by Stefan Landis
Autore Landis Stefan
Edizione [1st edition]
Pubbl/distr/stampa London, : ISTE
Descrizione fisica 1 online resource (353 p.)
Disciplina 621.381531
Altri autori (Persone) LandisStefan
Collana ISTE
Soggetto topico Nanolithography
ISBN 1-118-62170-0
1-118-62258-8
1-299-31558-5
1-118-62162-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Ch. 1. X-ray lithography : fundamentals and applications -- ch. 2. NanoImprint lithography -- ch. 3. Lithography techniques using scanning probe microscopy -- ch. 4. Lithography and manipulation based on the optical properties of metal nanostructures -- ch. 5. Patterning with self-assembling block copolymers -- ch. 6. Metrology for lithography.
Record Nr. UNINA-9910830314403321
Landis Stefan  
London, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nano-lithography / / edited by Stefan Landis
Nano-lithography / / edited by Stefan Landis
Edizione [1st edition]
Pubbl/distr/stampa London, : ISTE
Descrizione fisica 1 online resource (353 p.)
Disciplina 621.3815/31
Altri autori (Persone) LandisStefan
Collana ISTE
Soggetto topico Nanolithography
ISBN 9781118621707
1118621700
9781118622582
1118622588
9781299315587
1299315585
9781118621622
111862162X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Ch. 1. X-ray lithography : fundamentals and applications -- ch. 2. NanoImprint lithography -- ch. 3. Lithography techniques using scanning probe microscopy -- ch. 4. Lithography and manipulation based on the optical properties of metal nanostructures -- ch. 5. Patterning with self-assembling block copolymers -- ch. 6. Metrology for lithography.
Record Nr. UNINA-9911019632803321
London, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui