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Resistive Switching
| Resistive Switching |
| Autore | Rupp Jennifer |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing AG, , 2022 |
| Descrizione fisica | 1 online resource (386 pages) |
| Disciplina | 621.381537 |
| Altri autori (Persone) |
IelminiDaniele
ValovIlia |
| Collana | Electronic Materials: Science and Technology Ser. |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-030-42424-3 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Resistive Switching |
| Record Nr. | UNINA-9910502588903321 |
Rupp Jennifer
|
||
| Cham : , : Springer International Publishing AG, , 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Resistive switching : oxide materials, mechanisms, devices and operations / / edited by Jennifer Rupp, Daniele Ielmini, and Ilia Valov
| Resistive switching : oxide materials, mechanisms, devices and operations / / edited by Jennifer Rupp, Daniele Ielmini, and Ilia Valov |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2021] |
| Descrizione fisica | 1 online resource (386 pages) |
| Disciplina | 621.384133 |
| Collana | Electronic Materials: Science and Technology |
| Soggetto topico |
Electric resistors
Switching circuits |
| ISBN | 3-030-42424-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910523798703321 |
| Cham, Switzerland : , : Springer, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others]
| Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] |
| Pubbl/distr/stampa | Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016 |
| Descrizione fisica | 1 online resource (954 pages) |
| Disciplina | 621.381 |
| Soggetto topico |
Nanoelectronics
Memristors |
| ISBN |
3-527-68087-X
3-527-68094-2 3-527-68093-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Related Titles; Title Page; Copyright; Table of Contents; Preface; List of Contributors; Chapter 1: Introduction to Nanoionic Elements for Information Technology; 1.1 Concept of Two-Terminal Memristive Elements; 1.2 Memory Applications; 1.3 Logic Circuits; 1.4 Prospects and Challenges; Acknowledgments; References; Chapter 2: ReRAM Cells in the Framework of Two-Terminal Devices; 2.1 Introduction; 2.2 Two-Terminal Device Models; 2.3 Fundamental Description of Electronic Devices with Memory; 2.4 Device Engineer's View on ReRAM Devices as Two-Terminal Elements; 2.5 Conclusions; Acknowledgment
ReferencesChapter 3: Atomic and Electronic Structure of Oxides; 3.1 Introduction; 3.2 Crystal Structures; 3.3 Electronic Structure; 3.4 Material Classes and Characterization of the Electronic States; 3.5 Electronic Structure of Selected Oxides; 3.6 Ellingham Diagram for Binary Oxides; Acknowledgments; References; Chapter 4: Defect Structure of Metal Oxides; 4.1 Definition of Defects; 4.2 General Considerations on the Equilibrium Thermodynamics of Point Defects; 4.3 Definition of Point Defects; 4.4 Space-Charge Effects; 4.5 Case Studies; References; Chapter 5: Ion Transport in Metal Oxides 5.1 Introduction5.2 Macroscopic Definition; 5.3 Microscopic Definition; 5.4 Types of Diffusion Experiments; 5.5 Mass Transport along and across Extended Defects; 5.6 Case Studies; Acknowledgments; References; Chapter 6: Electrical Transport in Transition Metal Oxides; 6.1 Overview; 6.2 Structure of Transition Metal Oxides; 6.3 Models of Electrical Transport; 6.4 Band Insulators; 6.5 Half-Filled Mott Insulators; 6.6 Temperature-Induced Metal-Insulator Transitions in Oxides; References; Chapter 7: Quantum Point Contact Conduction; 7.1 Introduction 7.2 Conductance Quantization in Metallic Nanowires7.3 Conductance Quantization in Electrochemical Metallization Cells; 7.4 Filamentary Conduction and Quantization Effects in Binary Oxides; 7.5 Conclusion and Outlook; References; Chapter 8: Dielectric Breakdown Processes; 8.1 Introduction; 8.2 Basics of Dielectric Breakdown; 8.3 Physics of Defect Generation; 8.4 Breakdown and Oxide Failure Statistics; 8.5 Implications of Breakdown Statistics for ReRAM; 8.6 Chemistry of the Breakdown Path and Inference on Filament Formation; 8.7 Summary and Conclusions; References Chapter 9: Physics and Chemistry of Nanoionic Cells9.1 Introduction; 9.2 Basic Thermodynamics and Heterogeneous Equilibria; 9.3 Phase Boundaries and Boundary Layers; 9.4 Nucleation and Growth; 9.5 Electromotive Force; 9.6 General Transport Processes and Chemical Reactions; 9.7 Solid-State Reactions; 9.8 Electrochemical (Electrode) Reactions; 9.9 Stoichiometry Polarization; Summary; Acknowledgments; References; Chapter 10: Electroforming Processes in Metal Oxide Resistive-Switching Cells; 10.1 Introduction; 10.2 Forming Mechanisms; 10.3 Technical Issues Related to Forming 10.4 Summary and Outlook |
| Record Nr. | UNINA-9910137395803321 |
| Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others]
| Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] |
| Pubbl/distr/stampa | Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016 |
| Descrizione fisica | 1 online resource (954 pages) |
| Disciplina | 621.381 |
| Soggetto topico |
Nanoelectronics
Memristors |
| ISBN |
3-527-68087-X
3-527-68094-2 3-527-68093-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Related Titles; Title Page; Copyright; Table of Contents; Preface; List of Contributors; Chapter 1: Introduction to Nanoionic Elements for Information Technology; 1.1 Concept of Two-Terminal Memristive Elements; 1.2 Memory Applications; 1.3 Logic Circuits; 1.4 Prospects and Challenges; Acknowledgments; References; Chapter 2: ReRAM Cells in the Framework of Two-Terminal Devices; 2.1 Introduction; 2.2 Two-Terminal Device Models; 2.3 Fundamental Description of Electronic Devices with Memory; 2.4 Device Engineer's View on ReRAM Devices as Two-Terminal Elements; 2.5 Conclusions; Acknowledgment
ReferencesChapter 3: Atomic and Electronic Structure of Oxides; 3.1 Introduction; 3.2 Crystal Structures; 3.3 Electronic Structure; 3.4 Material Classes and Characterization of the Electronic States; 3.5 Electronic Structure of Selected Oxides; 3.6 Ellingham Diagram for Binary Oxides; Acknowledgments; References; Chapter 4: Defect Structure of Metal Oxides; 4.1 Definition of Defects; 4.2 General Considerations on the Equilibrium Thermodynamics of Point Defects; 4.3 Definition of Point Defects; 4.4 Space-Charge Effects; 4.5 Case Studies; References; Chapter 5: Ion Transport in Metal Oxides 5.1 Introduction5.2 Macroscopic Definition; 5.3 Microscopic Definition; 5.4 Types of Diffusion Experiments; 5.5 Mass Transport along and across Extended Defects; 5.6 Case Studies; Acknowledgments; References; Chapter 6: Electrical Transport in Transition Metal Oxides; 6.1 Overview; 6.2 Structure of Transition Metal Oxides; 6.3 Models of Electrical Transport; 6.4 Band Insulators; 6.5 Half-Filled Mott Insulators; 6.6 Temperature-Induced Metal-Insulator Transitions in Oxides; References; Chapter 7: Quantum Point Contact Conduction; 7.1 Introduction 7.2 Conductance Quantization in Metallic Nanowires7.3 Conductance Quantization in Electrochemical Metallization Cells; 7.4 Filamentary Conduction and Quantization Effects in Binary Oxides; 7.5 Conclusion and Outlook; References; Chapter 8: Dielectric Breakdown Processes; 8.1 Introduction; 8.2 Basics of Dielectric Breakdown; 8.3 Physics of Defect Generation; 8.4 Breakdown and Oxide Failure Statistics; 8.5 Implications of Breakdown Statistics for ReRAM; 8.6 Chemistry of the Breakdown Path and Inference on Filament Formation; 8.7 Summary and Conclusions; References Chapter 9: Physics and Chemistry of Nanoionic Cells9.1 Introduction; 9.2 Basic Thermodynamics and Heterogeneous Equilibria; 9.3 Phase Boundaries and Boundary Layers; 9.4 Nucleation and Growth; 9.5 Electromotive Force; 9.6 General Transport Processes and Chemical Reactions; 9.7 Solid-State Reactions; 9.8 Electrochemical (Electrode) Reactions; 9.9 Stoichiometry Polarization; Summary; Acknowledgments; References; Chapter 10: Electroforming Processes in Metal Oxide Resistive-Switching Cells; 10.1 Introduction; 10.2 Forming Mechanisms; 10.3 Technical Issues Related to Forming 10.4 Summary and Outlook |
| Record Nr. | UNINA-9910815717603321 |
| Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||