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Molecular Beam Epitaxy : from research to mass production / / edited by Mohamed Henini
| Molecular Beam Epitaxy : from research to mass production / / edited by Mohamed Henini |
| Edizione | [Second edition.] |
| Pubbl/distr/stampa | Amsterdam : , : Elsevier, , 2018 |
| Descrizione fisica | 1 online resource (xiii, 774 pages) : illustrations |
| Disciplina | 621.381 |
| Soggetto topico |
Molecular beam epitaxy
Semiconductors - Materials |
| ISBN | 0-12-812136-X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910583013303321 |
| Amsterdam : , : Elsevier, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Molecular beam epitaxy [[electronic resource] ] : from research to mass production / / edited by Mohamed Henini
| Molecular beam epitaxy [[electronic resource] ] : from research to mass production / / edited by Mohamed Henini |
| Pubbl/distr/stampa | Amsterdam, : Elsevier, c2012 |
| Descrizione fisica | 1 online resource (745 p.) |
| Disciplina |
621.3815
621.38152 |
| Altri autori (Persone) | HeniniMohamed |
| Soggetto topico |
Molecular beam epitaxy
Optoelectronic devices - Materials Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-73426-5
0-12-391859-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Molecular Beam Epitaxy: From research to mass production; Copyright; Contents; Preface; Contributors; Chapter 1 - Molecular beam epitaxy: fundamentals, historical background and future prospects; 1.1 INTRODUCTION; 1.2 BASICS OF MBE; 1.3 THE TECHNOLOGY OF MBE; 1.4 DIAGNOSTIC TECHNIQUES AVAILABLE IN MBE SYSTEMS; 1.5 THE PHYSICS OF MBE; 1.6 HISTORICAL BACKGROUND; 1.7 FUTURE PROSPECTS; 1.8 CONCLUSIONS; REFERENCES; Chapter 2 - Molecular beam epitaxy in the ultra-vacuum of space: present and near future; 2.1 INTRODUCTION; 2.2 WAKE SHIELD FACILITY; 2.3 SHIELD; 2.4 CURRENT STATUS
2.5 CONCLUSIONSREFERENCES; Chapter 3 - Growth of semiconductor nanowires by molecular beam epitaxy; 3.1 INTRODUCTION; 3.2 NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY: AN OVERVIEW; 3.3 GROWTH DYNAMICS: MODELS AND EXPERIMENTAL STUDIES; 3.4 CHARACTERISATION AND STRUCTURAL COMPLEXITY; 3.5 OPTICAL PROPERTIES; 3.6 MBE-GROWN NANOWIRE DEVICES: FROM FUNDAMENTALS TO APPLICATIONS; 3.7 CONCLUSIONS; REFERENCES; Chapter 4 - Droplet epitaxy of nanostructures; 4.1 INTRODUCTION; 4.2 DROPLET EPITAXY; 4.3 DROPLET DEPOSITION; 4.4 NANOSTRUCTURE FORMATION; 4.5 CAPPING AND POST-GROWTH ANNEALING PROCEDURES 4.6 PULSED DROPLET EPITAXYACKNOWLEDGEMENTS; REFERENCES; Chapter 5 - Migration-enhanced epitaxy for low-dimensional structures; 5.1 INTRODUCTION; 5.2 AREA SELECTIVE EPITAXY BY MEE; 5.3 POLAR DIAGRAM OF THE GROWTH RATE OF III-V COMPOUND SEMICONDUCTORS; 5.4 FORMATION OF CRYSTAL FACETS AT THE BOUNDARIES OF MICROSTRUCTURES; 5.5 AREA SELECTIVE GROWTH ON (001) GAAS SUBSTRATE BY MEE USING AS4 AND AS2; 5.6 AREA SELECTIVE GROWTH ON (111)B GAAS SUBSTRATE BY MEE; 5.7 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6 - MBE growth of high-mobility 2DEG; 6.1 INTRODUCTION; 6.2 HIGH-MOBILITY MBE SYSTEM Chapter 10 - Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy |
| Record Nr. | UNINA-9910462143903321 |
| Amsterdam, : Elsevier, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Molecular beam epitaxy [[electronic resource] ] : from research to mass production / / edited by Mohamed Henini
| Molecular beam epitaxy [[electronic resource] ] : from research to mass production / / edited by Mohamed Henini |
| Pubbl/distr/stampa | Amsterdam, : Elsevier, c2012 |
| Descrizione fisica | 1 online resource (745 p.) |
| Disciplina |
621.3815
621.38152 |
| Altri autori (Persone) | HeniniMohamed |
| Soggetto topico |
Molecular beam epitaxy
Optoelectronic devices - Materials Semiconductors - Materials |
| ISBN |
1-283-73426-5
0-12-391859-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Molecular Beam Epitaxy: From research to mass production; Copyright; Contents; Preface; Contributors; Chapter 1 - Molecular beam epitaxy: fundamentals, historical background and future prospects; 1.1 INTRODUCTION; 1.2 BASICS OF MBE; 1.3 THE TECHNOLOGY OF MBE; 1.4 DIAGNOSTIC TECHNIQUES AVAILABLE IN MBE SYSTEMS; 1.5 THE PHYSICS OF MBE; 1.6 HISTORICAL BACKGROUND; 1.7 FUTURE PROSPECTS; 1.8 CONCLUSIONS; REFERENCES; Chapter 2 - Molecular beam epitaxy in the ultra-vacuum of space: present and near future; 2.1 INTRODUCTION; 2.2 WAKE SHIELD FACILITY; 2.3 SHIELD; 2.4 CURRENT STATUS
2.5 CONCLUSIONSREFERENCES; Chapter 3 - Growth of semiconductor nanowires by molecular beam epitaxy; 3.1 INTRODUCTION; 3.2 NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY: AN OVERVIEW; 3.3 GROWTH DYNAMICS: MODELS AND EXPERIMENTAL STUDIES; 3.4 CHARACTERISATION AND STRUCTURAL COMPLEXITY; 3.5 OPTICAL PROPERTIES; 3.6 MBE-GROWN NANOWIRE DEVICES: FROM FUNDAMENTALS TO APPLICATIONS; 3.7 CONCLUSIONS; REFERENCES; Chapter 4 - Droplet epitaxy of nanostructures; 4.1 INTRODUCTION; 4.2 DROPLET EPITAXY; 4.3 DROPLET DEPOSITION; 4.4 NANOSTRUCTURE FORMATION; 4.5 CAPPING AND POST-GROWTH ANNEALING PROCEDURES 4.6 PULSED DROPLET EPITAXYACKNOWLEDGEMENTS; REFERENCES; Chapter 5 - Migration-enhanced epitaxy for low-dimensional structures; 5.1 INTRODUCTION; 5.2 AREA SELECTIVE EPITAXY BY MEE; 5.3 POLAR DIAGRAM OF THE GROWTH RATE OF III-V COMPOUND SEMICONDUCTORS; 5.4 FORMATION OF CRYSTAL FACETS AT THE BOUNDARIES OF MICROSTRUCTURES; 5.5 AREA SELECTIVE GROWTH ON (001) GAAS SUBSTRATE BY MEE USING AS4 AND AS2; 5.6 AREA SELECTIVE GROWTH ON (111)B GAAS SUBSTRATE BY MEE; 5.7 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6 - MBE growth of high-mobility 2DEG; 6.1 INTRODUCTION; 6.2 HIGH-MOBILITY MBE SYSTEM Chapter 10 - Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy |
| Record Nr. | UNINA-9910785910603321 |
| Amsterdam, : Elsevier, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Molecular beam epitaxy : from research to mass production / / edited by Mohamed Henini
| Molecular beam epitaxy : from research to mass production / / edited by Mohamed Henini |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Amsterdam, : Elsevier, c2012 |
| Descrizione fisica | 1 online resource (745 p.) |
| Disciplina |
621.3815
621.38152 621.381 |
| Altri autori (Persone) | HeniniMohamed |
| Soggetto topico |
Molecular beam epitaxy
Optoelectronic devices - Materials Semiconductors - Materials |
| ISBN |
1-283-73426-5
0-12-391859-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Molecular Beam Epitaxy: From research to mass production; Copyright; Contents; Preface; Contributors; Chapter 1 - Molecular beam epitaxy: fundamentals, historical background and future prospects; 1.1 INTRODUCTION; 1.2 BASICS OF MBE; 1.3 THE TECHNOLOGY OF MBE; 1.4 DIAGNOSTIC TECHNIQUES AVAILABLE IN MBE SYSTEMS; 1.5 THE PHYSICS OF MBE; 1.6 HISTORICAL BACKGROUND; 1.7 FUTURE PROSPECTS; 1.8 CONCLUSIONS; REFERENCES; Chapter 2 - Molecular beam epitaxy in the ultra-vacuum of space: present and near future; 2.1 INTRODUCTION; 2.2 WAKE SHIELD FACILITY; 2.3 SHIELD; 2.4 CURRENT STATUS
2.5 CONCLUSIONSREFERENCES; Chapter 3 - Growth of semiconductor nanowires by molecular beam epitaxy; 3.1 INTRODUCTION; 3.2 NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY: AN OVERVIEW; 3.3 GROWTH DYNAMICS: MODELS AND EXPERIMENTAL STUDIES; 3.4 CHARACTERISATION AND STRUCTURAL COMPLEXITY; 3.5 OPTICAL PROPERTIES; 3.6 MBE-GROWN NANOWIRE DEVICES: FROM FUNDAMENTALS TO APPLICATIONS; 3.7 CONCLUSIONS; REFERENCES; Chapter 4 - Droplet epitaxy of nanostructures; 4.1 INTRODUCTION; 4.2 DROPLET EPITAXY; 4.3 DROPLET DEPOSITION; 4.4 NANOSTRUCTURE FORMATION; 4.5 CAPPING AND POST-GROWTH ANNEALING PROCEDURES 4.6 PULSED DROPLET EPITAXYACKNOWLEDGEMENTS; REFERENCES; Chapter 5 - Migration-enhanced epitaxy for low-dimensional structures; 5.1 INTRODUCTION; 5.2 AREA SELECTIVE EPITAXY BY MEE; 5.3 POLAR DIAGRAM OF THE GROWTH RATE OF III-V COMPOUND SEMICONDUCTORS; 5.4 FORMATION OF CRYSTAL FACETS AT THE BOUNDARIES OF MICROSTRUCTURES; 5.5 AREA SELECTIVE GROWTH ON (001) GAAS SUBSTRATE BY MEE USING AS4 AND AS2; 5.6 AREA SELECTIVE GROWTH ON (111)B GAAS SUBSTRATE BY MEE; 5.7 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6 - MBE growth of high-mobility 2DEG; 6.1 INTRODUCTION; 6.2 HIGH-MOBILITY MBE SYSTEM Chapter 10 - Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy |
| Record Nr. | UNINA-9910815297303321 |
| Amsterdam, : Elsevier, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||