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The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith
| The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith |
| Pubbl/distr/stampa | Weinheim, [Germany] : , : VCH, , 1994 |
| Descrizione fisica | 1 online resource (566 p.) |
| Disciplina |
546.3
621.3815 |
| Soggetto topico |
Electronic circuit design
Chemical vapor deposition Metallic films |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-84291-5
9786611842918 3-527-61585-7 3-527-61584-9 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
The Chemistry of Metal CVD; Contents; List of Contributors; Chemical Abbreviations; General Abbreviations; 1 Introduction; 1.1 Introduction; 1.2 Current Interconnect Schemes in Silicon Devices; 1.2.1 Metal-Silicon Contacts; 1.2.2 Diffusion Barrier Layers; 1.2.2.1 Sacrificial Diffusion Barriers; 1.2.2.2 Stuffed Diffusion Barriers; 1.2.2.3 Passive Diffusion Barriers; 1.2.2.4 Amorphous Diffusion Barriers; 1.2.3 Contact Layers; 1.2.3.1 Platinum Silicide (PtSi); 1.2.3.2 Titanium Silicide (TiSi2); 1.2.3.3 Cobalt Silicide (CoSi2); 1.2.3.4 Other Near Noble Silicides (Nisi, PdzSi, MoSi2)
1.2.4 Primary Interconnection1.2.4.1 Aluminum Metallization; 1.2.4.2 Tungsten Metallization; 1.2.4.3 Copper Metallization; 1.2.4.4 Gold Metallization; 1.3 Metallization Requirements for the Year 2001 in Silicon-Based Technologies; 1.3.1 Trends in Device and Process Architecture; 1.3.2 CVD of Titanium; 1.3.3 CVD of Metal Silicides; 1.3.4 CVD of Metal Nitrides; 1.3.5 CVD of Copper and Barrier Layers; 1.3.6 Other Metallizations; 1.4 Metal Deposition Techniques; 1.4.1 Physical Vapor Deposition by Evaporation; 1.4.2 Physical Vapor Deposition by Sputtering 1.4.2.1 Conventional Sputter Deposition Techniques1.4.2.2 Magnetron-Based Sputter Deposition; 1.4.3 Chemical Vapor Deposition; 1.5 Manufacturing Issues in CVD Processes; 1.6 Summary and Conclusions; Acknowledgments; References; 2 Chemical Vapor Deposition of Aluminum; 2.1 Applications of Aluminum Films; 2.1.1 Microelectronics; 2.1.2 Metallized Polymers; 2.1.2.1 Gas Diffusion Barriers; 2.1.2.2 Optical Properties; 2.1.3 Adhesion; 2.2 Comparison Between Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) of Aluminum; 2.3 Understanding the CVD Process; 2.3.1 Surface Diffusion 2.3.2 Transport Phenomena2.3.3 Gas-Phase Reactions; 2.3.4 Surface Reactivity; 2.3.5 Nucleation; 2.3.6 Summary of Aluminum Precursors; 2.4 CVD Using Triisobutylaluminum; 2.4.1 Early Developments; 2.4.2 Optimization of Aluminum CVD; 2.4.2.1 Morphology of Aluminum Deposits; 2.4.2.2 Alloys with Cu and Si; 2.4.2.3 Nucleation Promoters; 2.4.2.4 Aluminum Epitaxy on Si; 2.4.3 Surface Decomposition Mechanism of TIBA; 2.4.4 Patterning of Aluminum Films; 2.5 Deposition of Aluminum from Trimethylaluminum; 2.5.1 Thermal Activation of TMA; 2.5.2 Plasma-Assisted Aluminum Deposition Using TMA 2.5.3 Laser-Assisted Aluminum Deposition from TMA2.6 Deposition of Aluminum Films from Alane Precursors; 2.6.1 Surface Reaction Mechanism of TMAA; 2.6.2 Deposition in Cold-Wall Reactors Using TMAA; 2.6.3 Deposition in Hot-Wall Reactors Using TMAA; 2.6.4 Aluminum Deposition from TEAA; 2.6.5 Aluminum Deposition from DMEAA; 2.6.6 Selectivity of Deposition Using Alane Precursors; 2.6.7 Aluminum Deposition Using Aluminaborane Precursors; 2.6.8 Gas-Phase Aluminum Particle Formation From Amine Alanes; 2.7 Alternative Aluminum Alkyl Sources; 2.7.1 Triethylaluminum; 2.7.2 Dimethylaluminum Hydride 2.7.3 Diethylaluminum Chloride |
| Record Nr. | UNINA-9910144717903321 |
| Weinheim, [Germany] : , : VCH, , 1994 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith
| The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith |
| Pubbl/distr/stampa | Weinheim, [Germany] : , : VCH, , 1994 |
| Descrizione fisica | 1 online resource (566 p.) |
| Disciplina |
546.3
621.3815 |
| Soggetto topico |
Electronic circuit design
Chemical vapor deposition Metallic films |
| ISBN |
1-281-84291-5
9786611842918 3-527-61585-7 3-527-61584-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
The Chemistry of Metal CVD; Contents; List of Contributors; Chemical Abbreviations; General Abbreviations; 1 Introduction; 1.1 Introduction; 1.2 Current Interconnect Schemes in Silicon Devices; 1.2.1 Metal-Silicon Contacts; 1.2.2 Diffusion Barrier Layers; 1.2.2.1 Sacrificial Diffusion Barriers; 1.2.2.2 Stuffed Diffusion Barriers; 1.2.2.3 Passive Diffusion Barriers; 1.2.2.4 Amorphous Diffusion Barriers; 1.2.3 Contact Layers; 1.2.3.1 Platinum Silicide (PtSi); 1.2.3.2 Titanium Silicide (TiSi2); 1.2.3.3 Cobalt Silicide (CoSi2); 1.2.3.4 Other Near Noble Silicides (Nisi, PdzSi, MoSi2)
1.2.4 Primary Interconnection1.2.4.1 Aluminum Metallization; 1.2.4.2 Tungsten Metallization; 1.2.4.3 Copper Metallization; 1.2.4.4 Gold Metallization; 1.3 Metallization Requirements for the Year 2001 in Silicon-Based Technologies; 1.3.1 Trends in Device and Process Architecture; 1.3.2 CVD of Titanium; 1.3.3 CVD of Metal Silicides; 1.3.4 CVD of Metal Nitrides; 1.3.5 CVD of Copper and Barrier Layers; 1.3.6 Other Metallizations; 1.4 Metal Deposition Techniques; 1.4.1 Physical Vapor Deposition by Evaporation; 1.4.2 Physical Vapor Deposition by Sputtering 1.4.2.1 Conventional Sputter Deposition Techniques1.4.2.2 Magnetron-Based Sputter Deposition; 1.4.3 Chemical Vapor Deposition; 1.5 Manufacturing Issues in CVD Processes; 1.6 Summary and Conclusions; Acknowledgments; References; 2 Chemical Vapor Deposition of Aluminum; 2.1 Applications of Aluminum Films; 2.1.1 Microelectronics; 2.1.2 Metallized Polymers; 2.1.2.1 Gas Diffusion Barriers; 2.1.2.2 Optical Properties; 2.1.3 Adhesion; 2.2 Comparison Between Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) of Aluminum; 2.3 Understanding the CVD Process; 2.3.1 Surface Diffusion 2.3.2 Transport Phenomena2.3.3 Gas-Phase Reactions; 2.3.4 Surface Reactivity; 2.3.5 Nucleation; 2.3.6 Summary of Aluminum Precursors; 2.4 CVD Using Triisobutylaluminum; 2.4.1 Early Developments; 2.4.2 Optimization of Aluminum CVD; 2.4.2.1 Morphology of Aluminum Deposits; 2.4.2.2 Alloys with Cu and Si; 2.4.2.3 Nucleation Promoters; 2.4.2.4 Aluminum Epitaxy on Si; 2.4.3 Surface Decomposition Mechanism of TIBA; 2.4.4 Patterning of Aluminum Films; 2.5 Deposition of Aluminum from Trimethylaluminum; 2.5.1 Thermal Activation of TMA; 2.5.2 Plasma-Assisted Aluminum Deposition Using TMA 2.5.3 Laser-Assisted Aluminum Deposition from TMA2.6 Deposition of Aluminum Films from Alane Precursors; 2.6.1 Surface Reaction Mechanism of TMAA; 2.6.2 Deposition in Cold-Wall Reactors Using TMAA; 2.6.3 Deposition in Hot-Wall Reactors Using TMAA; 2.6.4 Aluminum Deposition from TEAA; 2.6.5 Aluminum Deposition from DMEAA; 2.6.6 Selectivity of Deposition Using Alane Precursors; 2.6.7 Aluminum Deposition Using Aluminaborane Precursors; 2.6.8 Gas-Phase Aluminum Particle Formation From Amine Alanes; 2.7 Alternative Aluminum Alkyl Sources; 2.7.1 Triethylaluminum; 2.7.2 Dimethylaluminum Hydride 2.7.3 Diethylaluminum Chloride |
| Record Nr. | UNISA-996199395603316 |
| Weinheim, [Germany] : , : VCH, , 1994 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith
| The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith |
| Pubbl/distr/stampa | Weinheim, [Germany] : , : VCH, , 1994 |
| Descrizione fisica | 1 online resource (566 p.) |
| Disciplina |
546.3
621.3815 |
| Soggetto topico |
Electronic circuit design
Chemical vapor deposition Metallic films |
| ISBN |
1-281-84291-5
9786611842918 3-527-61585-7 3-527-61584-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
The Chemistry of Metal CVD; Contents; List of Contributors; Chemical Abbreviations; General Abbreviations; 1 Introduction; 1.1 Introduction; 1.2 Current Interconnect Schemes in Silicon Devices; 1.2.1 Metal-Silicon Contacts; 1.2.2 Diffusion Barrier Layers; 1.2.2.1 Sacrificial Diffusion Barriers; 1.2.2.2 Stuffed Diffusion Barriers; 1.2.2.3 Passive Diffusion Barriers; 1.2.2.4 Amorphous Diffusion Barriers; 1.2.3 Contact Layers; 1.2.3.1 Platinum Silicide (PtSi); 1.2.3.2 Titanium Silicide (TiSi2); 1.2.3.3 Cobalt Silicide (CoSi2); 1.2.3.4 Other Near Noble Silicides (Nisi, PdzSi, MoSi2)
1.2.4 Primary Interconnection1.2.4.1 Aluminum Metallization; 1.2.4.2 Tungsten Metallization; 1.2.4.3 Copper Metallization; 1.2.4.4 Gold Metallization; 1.3 Metallization Requirements for the Year 2001 in Silicon-Based Technologies; 1.3.1 Trends in Device and Process Architecture; 1.3.2 CVD of Titanium; 1.3.3 CVD of Metal Silicides; 1.3.4 CVD of Metal Nitrides; 1.3.5 CVD of Copper and Barrier Layers; 1.3.6 Other Metallizations; 1.4 Metal Deposition Techniques; 1.4.1 Physical Vapor Deposition by Evaporation; 1.4.2 Physical Vapor Deposition by Sputtering 1.4.2.1 Conventional Sputter Deposition Techniques1.4.2.2 Magnetron-Based Sputter Deposition; 1.4.3 Chemical Vapor Deposition; 1.5 Manufacturing Issues in CVD Processes; 1.6 Summary and Conclusions; Acknowledgments; References; 2 Chemical Vapor Deposition of Aluminum; 2.1 Applications of Aluminum Films; 2.1.1 Microelectronics; 2.1.2 Metallized Polymers; 2.1.2.1 Gas Diffusion Barriers; 2.1.2.2 Optical Properties; 2.1.3 Adhesion; 2.2 Comparison Between Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) of Aluminum; 2.3 Understanding the CVD Process; 2.3.1 Surface Diffusion 2.3.2 Transport Phenomena2.3.3 Gas-Phase Reactions; 2.3.4 Surface Reactivity; 2.3.5 Nucleation; 2.3.6 Summary of Aluminum Precursors; 2.4 CVD Using Triisobutylaluminum; 2.4.1 Early Developments; 2.4.2 Optimization of Aluminum CVD; 2.4.2.1 Morphology of Aluminum Deposits; 2.4.2.2 Alloys with Cu and Si; 2.4.2.3 Nucleation Promoters; 2.4.2.4 Aluminum Epitaxy on Si; 2.4.3 Surface Decomposition Mechanism of TIBA; 2.4.4 Patterning of Aluminum Films; 2.5 Deposition of Aluminum from Trimethylaluminum; 2.5.1 Thermal Activation of TMA; 2.5.2 Plasma-Assisted Aluminum Deposition Using TMA 2.5.3 Laser-Assisted Aluminum Deposition from TMA2.6 Deposition of Aluminum Films from Alane Precursors; 2.6.1 Surface Reaction Mechanism of TMAA; 2.6.2 Deposition in Cold-Wall Reactors Using TMAA; 2.6.3 Deposition in Hot-Wall Reactors Using TMAA; 2.6.4 Aluminum Deposition from TEAA; 2.6.5 Aluminum Deposition from DMEAA; 2.6.6 Selectivity of Deposition Using Alane Precursors; 2.6.7 Aluminum Deposition Using Aluminaborane Precursors; 2.6.8 Gas-Phase Aluminum Particle Formation From Amine Alanes; 2.7 Alternative Aluminum Alkyl Sources; 2.7.1 Triethylaluminum; 2.7.2 Dimethylaluminum Hydride 2.7.3 Diethylaluminum Chloride |
| Record Nr. | UNINA-9910830567303321 |
| Weinheim, [Germany] : , : VCH, , 1994 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||