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Bias temperature instability for devices and circuits / / Tibor Grasser, editor
| Bias temperature instability for devices and circuits / / Tibor Grasser, editor |
| Edizione | [1st ed. 2014.] |
| Pubbl/distr/stampa | New York : , : Springer, , 2014 |
| Descrizione fisica | 1 online resource (xi, 810 pages) : illustrations (some color) |
| Disciplina | 621.3192 |
| Collana | Gale eBooks |
| Soggetto topico | Metal oxide semiconductor field-effect transistors |
| ISBN | 1-4614-7909-6 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits. |
| Record Nr. | UNINA-9910299747703321 |
| New York : , : Springer, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Hot Carrier Degradation in Semiconductor Devices / / edited by Tibor Grasser
| Hot Carrier Degradation in Semiconductor Devices / / edited by Tibor Grasser |
| Edizione | [1st ed. 2015.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2015 |
| Descrizione fisica | 1 online resource (518 p.) |
| Disciplina |
620
621.381 621.3815 |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Circuits and Systems Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation |
| ISBN | 3-319-08994-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Part I: Beyond Lucky Electrons -- From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation -- The Energy Driven Hot Carrier Model -- Hot-Carrier Degradation in Decananometer -- Physics-based Modeling of Hot-carrier Degradation -- The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation -- Recovery from Hot Carrier Induced Degradation Through Temperature Treatment -- Characterization of MOSFET Interface States Using the Charge Pumping Technique -- Part II: CMOS and Beyond -- Channel Hot Carriers in SiGe and Ge pMOSFETs -- Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs -- Characterization and Modeling of High-Voltage LDMOS Transistors -- Compact modelling of the Hot-carrier Degradation of Integrated HV MOSFETs -- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors. |
| Record Nr. | UNINA-9910299660903321 |
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (352 p.) |
| Soggetto topico |
Research & information: general
Mathematics & science |
| Soggetto non controllato |
FinFETs
CMOS device processing integrated circuits silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) solid state circuit breaker (SSCB) prototype circuit design GaN HEMT high gate multi-recessed buffer power density power-added efficiency 4H-SiC MESFET IMRD structure power added efficiency 1200 V SiC MOSFET body diode surge reliability silvaco simulation floating gate transistor control gate CMOS device active noise control vacuum channel mean free path vertical air-channel diode vertical transistor field emission particle trajectory model F-N plot space-charge-limited currents 4H-SiC MESFET simulation power added efficiency (PAE) new device three-input transistor T-channel compact circuit style CMOS compatible technology avalanche photodiode SPICE model bandwidth high responsivity silicon photodiode AlGaN/GaN HEMTs thermal simulation transient channel temperature pulse width gate structures band-to-band tunnelling (BTBT) tunnelling field-effect transistor (TFET) germanium-around-source gate-all-around TFET (GAS GAA TFET) average subthreshold swing direct source-to-drain tunneling transport effective mass confinement effective mass multi-subband ensemble Monte Carlo non-equilibrium Green's function DGSOI FinFET core-insulator gate-all-around field effect transistor GAA nanowire one-transistor dynamic random-access memory (1T-DRAM) polysilicon grain boundary electron trapping flexible transistors polymers metal oxides nanocomposites dielectrics active layers nanotransistor quantum transport Landauer-Büttiker formalism R-matrix method nanoscale mosfet quantum current surface transfer doping 2D hole gas (2DHG) diamond MoO3 V2O5 MOSFET reliability random telegraph noise oxide defects SiO2 split-gate trench power MOSFET multiple epitaxial layers specific on-resistance device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model time-dependent defect spectroscopy |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Noise in Nanoscale Semiconductor Devices / / edited by Tibor Grasser
| Noise in Nanoscale Semiconductor Devices / / edited by Tibor Grasser |
| Edizione | [1st ed. 2020.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (724 pages) |
| Disciplina | 621.38152 |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Circuits and Systems Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation |
| ISBN | 3-030-37500-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910392740003321 |
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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