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Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
| Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao |
| Autore | Gao Jianjun <1968-> |
| Pubbl/distr/stampa | Singapore : , : John Wiley and Sons, Incorporated, , 2015 |
| Descrizione fisica | 1 online resource (278 p.) |
| Disciplina | 621.3815/28 |
| Soggetto topico |
Bipolar transistors
Heterojunctions Electronic circuit design Microwave measurements |
| ISBN |
1-118-92153-4
1-118-92155-0 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept 3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction 4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance 5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model 6.4.3 Macromodeling Method |
| Record Nr. | UNINA-9910140452403321 |
Gao Jianjun <1968->
|
||
| Singapore : , : John Wiley and Sons, Incorporated, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
| Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao |
| Autore | Gao Jianjun <1968-> |
| Pubbl/distr/stampa | Singapore : , : John Wiley and Sons, Incorporated, , 2015 |
| Descrizione fisica | 1 online resource (278 p.) |
| Disciplina | 621.3815/28 |
| Soggetto topico |
Bipolar transistors
Heterojunctions Electronic circuit design Microwave measurements |
| ISBN |
1-118-92153-4
1-118-92155-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept 3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction 4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance 5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model 6.4.3 Macromodeling Method |
| Record Nr. | UNINA-9910822337003321 |
|
Gao Jianjun <1968->
|
||
| Singapore : , : John Wiley and Sons, Incorporated, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Optoelectronic integrated circuit design and device modeling [[electronic resource] /] / Jianjun Gao
| Optoelectronic integrated circuit design and device modeling [[electronic resource] /] / Jianjun Gao |
| Autore | Gao Jianjun <1968-> |
| Pubbl/distr/stampa | Singapore ; ; Hoboken, N.J., : Wiley, c2011 |
| Descrizione fisica | 1 online resource (310 p.) |
| Disciplina | 621.3815 |
| Soggetto topico |
Integrated optics
Optoelectronic devices |
| ISBN |
0-470-82736-X
1-280-76796-0 9786613678737 0-470-82838-2 0-470-82735-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Optoelectronic Integrated Circuit Design and Device Modeling; Contents; Preface; About the Author; Nomenclature; 1 Introduction; 1.1 Optical Communication System; 1.2 Optoelectronic Integrated Circuit Computer-Aided Design; 1.3 Organization of This Book; References; 2 Basic Concept of Semiconductor Laser Diodes; 2.1 Introduction; 2.2 Basic Concept; 2.2.1 Atom Energy; 2.2.2 Emission and Absorption; 2.2.3 Population Inversion; 2.3 Structures and Types; 2.3.1 Homojunction and Heterojunction; 2.3.2 Index Guiding and Gain Guiding; 2.3.3 Fabry-Perot Cavity Lasers; 2.3.4 Quantum-Well Lasers
2.3.5 Distributed Feedback Lasers2.3.6 Vertical-Cavity Surface-Emitting Lasers; 2.4 Laser Characteristics; 2.4.1 Single-Mode Rate Equations; 2.4.2 Multimode Rate Equations; 2.4.3 Small-Signal Intensity Modulation; 2.4.4 Small-Signal Frequency Modulation; 2.4.5 Large-Signal Transit Response; 2.4.6 Second Harmonic Distortion; 2.4.7 Relative Intensity Noise; 2.4.8 Measurement Technique; 2.5 Summary; References; 3 Modeling and Parameter Extraction Techniques of Lasers; 3.1 Introduction; 3.2 Standard Double Heterojunction Semiconductor Lasers; 3.2.1 Large-Signal Model; 3.2.2 Small-Signal Model 3.2.3 Noise Model3.3 Quantum-Well Lasers; 3.3.1 One-Level Equivalent Circuit Model; 3.3.2 Two-Level Equivalent Circuit Model; 3.3.3 Three-Level Equivalent Circuit Model; 3.4 Parameter Extraction Methods; 3.4.1 Direct-Extraction Method; 3.4.2 Semi-Analytical Method; 3.5 Summary; References; 4 Microwave Modeling Techniques of Photodiodes; 4.1 Introduction; 4.2 Physical Principles; 4.3 Figures of Merit; 4.3.1 Responsivity; 4.3.2 Quantum Efficiency; 4.3.3 Absorption Coefficient; 4.3.4 Dark Current; 4.3.5 Rise Time and Bandwidth; 4.3.6 Noise Currents; 4.4 Microwave Modeling Techniques 4.4.1 PIN PD4.4.2 APD; 4.5 Summary; References; 5 High-Speed Electronic Semiconductor Devices; 5.1 Overview of Microwave Transistors; 5.2 FET Modeling Technique; 5.2.1 FET Small-Signal Modeling; 5.2.2 FET Large-Signal Modeling; 5.2.3 FET Noise Modeling; 5.3 GaAs/InP HBT Modeling Technique; 5.3.1 GaAs/InP HBT Nonlinear Model; 5.3.2 GaAs/InP HBT Linear Model; 5.3.3 GaAs/InP HBT Noise Model; 5.3.4 Parameter Extraction Methods; 5.4 SiGe HBT Modeling Technique; 5.5 MOSFET Modeling Technique; 5.5.1 MOSFET Small-Signal Model; 5.5.2 MOSFET Noise Model; 5.5.3 Parameter Extraction Methods; 5.6 Summary References6 Semiconductor Laser and Modulator Driver Circuit Design; 6.1 Basic Concepts; 6.1.1 NRZ and RZ Data; 6.1.2 Optical Modulation; 6.1.3 Optical External Modulator; 6.2 Optoelectronic Integration Technology; 6.2.1 Monolithic Optoelectronic Integrated Circuits; 6.2.2 Hybrid Optoelectronic Integrated Circuits; 6.3 Laser Driver Circuit Design; 6.4 Modulator Driver Circuit Design; 6.4.1 FET-Based Driver Circuit; 6.4.2 Bipolar Transistor-Based Driver Integrated Circuit; 6.4.3 MOSFET-Based Driver Integrated Circuit; 6.5 Distributed Driver Circuit Design; 6.6 Passive Peaking Techniques 6.6.1 Capacitive Peaking Techniques |
| Record Nr. | UNINA-9910140875803321 |
|
Gao Jianjun <1968->
|
||
| Singapore ; ; Hoboken, N.J., : Wiley, c2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Optoelectronic integrated circuit design and device modeling [[electronic resource] /] / Jianjun Gao
| Optoelectronic integrated circuit design and device modeling [[electronic resource] /] / Jianjun Gao |
| Autore | Gao Jianjun <1968-> |
| Pubbl/distr/stampa | Singapore ; ; Hoboken, N.J., : Wiley, c2011 |
| Descrizione fisica | 1 online resource (310 p.) |
| Disciplina | 621.3815 |
| Soggetto topico |
Integrated optics
Optoelectronic devices |
| ISBN |
0-470-82736-X
1-280-76796-0 9786613678737 0-470-82838-2 0-470-82735-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Optoelectronic Integrated Circuit Design and Device Modeling; Contents; Preface; About the Author; Nomenclature; 1 Introduction; 1.1 Optical Communication System; 1.2 Optoelectronic Integrated Circuit Computer-Aided Design; 1.3 Organization of This Book; References; 2 Basic Concept of Semiconductor Laser Diodes; 2.1 Introduction; 2.2 Basic Concept; 2.2.1 Atom Energy; 2.2.2 Emission and Absorption; 2.2.3 Population Inversion; 2.3 Structures and Types; 2.3.1 Homojunction and Heterojunction; 2.3.2 Index Guiding and Gain Guiding; 2.3.3 Fabry-Perot Cavity Lasers; 2.3.4 Quantum-Well Lasers
2.3.5 Distributed Feedback Lasers2.3.6 Vertical-Cavity Surface-Emitting Lasers; 2.4 Laser Characteristics; 2.4.1 Single-Mode Rate Equations; 2.4.2 Multimode Rate Equations; 2.4.3 Small-Signal Intensity Modulation; 2.4.4 Small-Signal Frequency Modulation; 2.4.5 Large-Signal Transit Response; 2.4.6 Second Harmonic Distortion; 2.4.7 Relative Intensity Noise; 2.4.8 Measurement Technique; 2.5 Summary; References; 3 Modeling and Parameter Extraction Techniques of Lasers; 3.1 Introduction; 3.2 Standard Double Heterojunction Semiconductor Lasers; 3.2.1 Large-Signal Model; 3.2.2 Small-Signal Model 3.2.3 Noise Model3.3 Quantum-Well Lasers; 3.3.1 One-Level Equivalent Circuit Model; 3.3.2 Two-Level Equivalent Circuit Model; 3.3.3 Three-Level Equivalent Circuit Model; 3.4 Parameter Extraction Methods; 3.4.1 Direct-Extraction Method; 3.4.2 Semi-Analytical Method; 3.5 Summary; References; 4 Microwave Modeling Techniques of Photodiodes; 4.1 Introduction; 4.2 Physical Principles; 4.3 Figures of Merit; 4.3.1 Responsivity; 4.3.2 Quantum Efficiency; 4.3.3 Absorption Coefficient; 4.3.4 Dark Current; 4.3.5 Rise Time and Bandwidth; 4.3.6 Noise Currents; 4.4 Microwave Modeling Techniques 4.4.1 PIN PD4.4.2 APD; 4.5 Summary; References; 5 High-Speed Electronic Semiconductor Devices; 5.1 Overview of Microwave Transistors; 5.2 FET Modeling Technique; 5.2.1 FET Small-Signal Modeling; 5.2.2 FET Large-Signal Modeling; 5.2.3 FET Noise Modeling; 5.3 GaAs/InP HBT Modeling Technique; 5.3.1 GaAs/InP HBT Nonlinear Model; 5.3.2 GaAs/InP HBT Linear Model; 5.3.3 GaAs/InP HBT Noise Model; 5.3.4 Parameter Extraction Methods; 5.4 SiGe HBT Modeling Technique; 5.5 MOSFET Modeling Technique; 5.5.1 MOSFET Small-Signal Model; 5.5.2 MOSFET Noise Model; 5.5.3 Parameter Extraction Methods; 5.6 Summary References6 Semiconductor Laser and Modulator Driver Circuit Design; 6.1 Basic Concepts; 6.1.1 NRZ and RZ Data; 6.1.2 Optical Modulation; 6.1.3 Optical External Modulator; 6.2 Optoelectronic Integration Technology; 6.2.1 Monolithic Optoelectronic Integrated Circuits; 6.2.2 Hybrid Optoelectronic Integrated Circuits; 6.3 Laser Driver Circuit Design; 6.4 Modulator Driver Circuit Design; 6.4.1 FET-Based Driver Circuit; 6.4.2 Bipolar Transistor-Based Driver Integrated Circuit; 6.4.3 MOSFET-Based Driver Integrated Circuit; 6.5 Distributed Driver Circuit Design; 6.6 Passive Peaking Techniques 6.6.1 Capacitive Peaking Techniques |
| Record Nr. | UNINA-9910817674303321 |
|
Gao Jianjun <1968->
|
||
| Singapore ; ; Hoboken, N.J., : Wiley, c2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||