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MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910450680703321 |
Galup-Montoro Carlos
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910784046503321 |
|
Galup-Montoro Carlos
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
MOSFET modeling for circuit analysis and design / / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design / / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910809418503321 |
|
Galup-Montoro Carlos
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||