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Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / / Jon C. Freeman
| Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / / Jon C. Freeman |
| Autore | Freeman Jon C. |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2003 |
| Descrizione fisica | 1 online resource (65 pages) : illustrations |
| Collana | NASA/TM |
| Soggetto topico |
Gallium nitrides
Field effect transistors High electron mobility transistors |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Basic equations for the modeling of gallium nitride |
| Record Nr. | UNINA-9910705626303321 |
Freeman Jon C.
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Preliminary study of electron emission for use in the PIC portion of MAFIA / / Jon C. Freeman
| Preliminary study of electron emission for use in the PIC portion of MAFIA / / Jon C. Freeman |
| Autore | Freeman Jon C. |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , June 2001 |
| Descrizione fisica | 1 online resource (i, 67 pages) : illustrations |
| Collana | NASA/TM |
| Soggetto topico |
Computer programs
Beam currents Cathodes Charged particles Electron beams |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Preliminary study of electron emission for use in the particle-in-cell portion of MAFIA |
| Record Nr. | UNINA-9910691821403321 |
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Freeman Jon C.
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , June 2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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