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Advances in surface acoustic wave technology, systems and applications . Voume 2 [[electronic resource] /] / editors, Clemens C.W. Ruppel, Tor A. Fjeldly
| Advances in surface acoustic wave technology, systems and applications . Voume 2 [[electronic resource] /] / editors, Clemens C.W. Ruppel, Tor A. Fjeldly |
| Pubbl/distr/stampa | Singapore ; ; Hong Kong, : World Scientific, 2001 |
| Descrizione fisica | 1 online resource (376 p.) |
| Disciplina | 621.3828 |
| Altri autori (Persone) |
RuppelClemens C. W. <1952->
FjeldlyTor A |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Acoustic surface wave devices
Nuclear engineering |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-96061-6
9786611960612 981-281-156-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; Special Issue EDITORS; CONTENTS; Coupling-of-modes Analysis of SAW Devices; 1. Introduction; 2. COM Model for Surface-Acoustic Waves; 3. Improvements and Modifications of the COM Model; 4. Extraction of COM Parameters; 5. Device Modeling and Design; 6. Conclusions and Future Challenges; Theory and Applications of Green's Functions; 1. Introduction; 2. On the Diagonalization of Piezoelectric Equations in Transversally Inhomogeneous Media; 3. A Discussion on Green's Functions; 4. Summary; New Piezoelectric Substrates for SAW Devices; 1. Introduction
2. Quartz Homeotypes - Gallium Orthophosphate3. Calcium Gallo-Germanates - Langasite Langanite and Langatate; 4. Lithium Compounds - Diomignite; Pseudo and High Velocity Pseudo SAWs; 1. Introduction; 2. Fundamentals of Pseudo SAWS; 3. Characteristics of PSAW and HVPSAW Solutions; 4. Layered Solutions; 5. Conclusions; SAW Devices Beyond 5 GHz; 1. Introduction; 2. Propagation Loss in the GHz-Range for SAW Devices; 3. Influence of Electrode Resistance in SAW Devices; 4. Fabrication Process; 5. SAW Filter Using Unidirectional Transducer Beyond 5 GHz; 6. Ladder Type Filter; 7. Prospective 8. ConclusionsWireless SAW Identification and Sensor Systems; 1. Introduction; 2. Passive Wireless SAW ID Tags and Sensors; 3. SAW Identification and Sensor Systems; 4. Event-Driven SAW Sensors; 5. Measurement Accuracy; Interaction of Surface Acoustic Waves Electrons and Light; 1. Introduction; 2. Electrical boundary conditions for SAW in two dimensions; 3. SAW probing the dynamic conductivity of low-dimensional electron systems; 4. Hybrid systems; 5. Interaction between SAW and light; 6. Summary and future prospects; 7. Acknowledgments |
| Record Nr. | UNINA-9910453801503321 |
| Singapore ; ; Hong Kong, : World Scientific, 2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in surface acoustic wave technology, systems and applications . Voume 2 [[electronic resource] /] / editors, Clemens C.W. Ruppel, Tor A. Fjeldly
| Advances in surface acoustic wave technology, systems and applications . Voume 2 [[electronic resource] /] / editors, Clemens C.W. Ruppel, Tor A. Fjeldly |
| Pubbl/distr/stampa | Singapore ; ; Hong Kong, : World Scientific, 2001 |
| Descrizione fisica | 1 online resource (376 p.) |
| Disciplina | 621.3828 |
| Altri autori (Persone) |
RuppelClemens C. W. <1952->
FjeldlyTor A |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Acoustic surface wave devices
Nuclear engineering |
| ISBN |
1-281-96061-6
9786611960612 981-281-156-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; Special Issue EDITORS; CONTENTS; Coupling-of-modes Analysis of SAW Devices; 1. Introduction; 2. COM Model for Surface-Acoustic Waves; 3. Improvements and Modifications of the COM Model; 4. Extraction of COM Parameters; 5. Device Modeling and Design; 6. Conclusions and Future Challenges; Theory and Applications of Green's Functions; 1. Introduction; 2. On the Diagonalization of Piezoelectric Equations in Transversally Inhomogeneous Media; 3. A Discussion on Green's Functions; 4. Summary; New Piezoelectric Substrates for SAW Devices; 1. Introduction
2. Quartz Homeotypes - Gallium Orthophosphate3. Calcium Gallo-Germanates - Langasite Langanite and Langatate; 4. Lithium Compounds - Diomignite; Pseudo and High Velocity Pseudo SAWs; 1. Introduction; 2. Fundamentals of Pseudo SAWS; 3. Characteristics of PSAW and HVPSAW Solutions; 4. Layered Solutions; 5. Conclusions; SAW Devices Beyond 5 GHz; 1. Introduction; 2. Propagation Loss in the GHz-Range for SAW Devices; 3. Influence of Electrode Resistance in SAW Devices; 4. Fabrication Process; 5. SAW Filter Using Unidirectional Transducer Beyond 5 GHz; 6. Ladder Type Filter; 7. Prospective 8. ConclusionsWireless SAW Identification and Sensor Systems; 1. Introduction; 2. Passive Wireless SAW ID Tags and Sensors; 3. SAW Identification and Sensor Systems; 4. Event-Driven SAW Sensors; 5. Measurement Accuracy; Interaction of Surface Acoustic Waves Electrons and Light; 1. Introduction; 2. Electrical boundary conditions for SAW in two dimensions; 3. SAW probing the dynamic conductivity of low-dimensional electron systems; 4. Hybrid systems; 5. Interaction between SAW and light; 6. Summary and future prospects; 7. Acknowledgments |
| Record Nr. | UNINA-9910782586403321 |
| Singapore ; ; Hong Kong, : World Scientific, 2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in surface acoustic wave technology, systems and applications . Voume 2 / / editors, Clemens C.W. Ruppel, Tor A. Fjeldly
| Advances in surface acoustic wave technology, systems and applications . Voume 2 / / editors, Clemens C.W. Ruppel, Tor A. Fjeldly |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Singapore ; ; Hong Kong, : World Scientific, 2001 |
| Descrizione fisica | 1 online resource (376 p.) |
| Disciplina | 621.3828 |
| Altri autori (Persone) |
RuppelClemens C. W. <1952->
FjeldlyTor A |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Acoustic surface wave devices
Nuclear engineering |
| ISBN |
1-281-96061-6
9786611960612 981-281-156-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; Special Issue EDITORS; CONTENTS; Coupling-of-modes Analysis of SAW Devices; 1. Introduction; 2. COM Model for Surface-Acoustic Waves; 3. Improvements and Modifications of the COM Model; 4. Extraction of COM Parameters; 5. Device Modeling and Design; 6. Conclusions and Future Challenges; Theory and Applications of Green's Functions; 1. Introduction; 2. On the Diagonalization of Piezoelectric Equations in Transversally Inhomogeneous Media; 3. A Discussion on Green's Functions; 4. Summary; New Piezoelectric Substrates for SAW Devices; 1. Introduction
2. Quartz Homeotypes - Gallium Orthophosphate3. Calcium Gallo-Germanates - Langasite Langanite and Langatate; 4. Lithium Compounds - Diomignite; Pseudo and High Velocity Pseudo SAWs; 1. Introduction; 2. Fundamentals of Pseudo SAWS; 3. Characteristics of PSAW and HVPSAW Solutions; 4. Layered Solutions; 5. Conclusions; SAW Devices Beyond 5 GHz; 1. Introduction; 2. Propagation Loss in the GHz-Range for SAW Devices; 3. Influence of Electrode Resistance in SAW Devices; 4. Fabrication Process; 5. SAW Filter Using Unidirectional Transducer Beyond 5 GHz; 6. Ladder Type Filter; 7. Prospective 8. ConclusionsWireless SAW Identification and Sensor Systems; 1. Introduction; 2. Passive Wireless SAW ID Tags and Sensors; 3. SAW Identification and Sensor Systems; 4. Event-Driven SAW Sensors; 5. Measurement Accuracy; Interaction of Surface Acoustic Waves Electrons and Light; 1. Introduction; 2. Electrical boundary conditions for SAW in two dimensions; 3. SAW probing the dynamic conductivity of low-dimensional electron systems; 4. Hybrid systems; 5. Interaction between SAW and light; 6. Summary and future prospects; 7. Acknowledgments |
| Record Nr. | UNINA-9910818633403321 |
| Singapore ; ; Hong Kong, : World Scientific, 2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
CMOS RF modeling, characterization and applications [[electronic resource] /] / editors, M. Jamal Deen, Tor A. Fjeldly
| CMOS RF modeling, characterization and applications [[electronic resource] /] / editors, M. Jamal Deen, Tor A. Fjeldly |
| Pubbl/distr/stampa | River Edge, N.J., : World Scientific, c2002 |
| Descrizione fisica | 1 online resource (422 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
DeenM. Jamal
FjeldlyTor A |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Metal oxide semiconductors, Complementary
Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN | 981-277-776-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; RF MOS Measurements ; 1 Characterizing Devices From DC To High Frequencies ; 2 DC Measurements As A Prerequisite For RF Setups ; 3 Capacitance Measurements At 1MHz ; 4 From Y-, Z-, And H-Parameters To S-Parameters; 5 Network Analyzer Measurements ; 6 Extending The Measurement Plane To The Transistor: De-embedding
7 Checking RF Measurement Data Consistency 8 Test Structures For MOS Transistors ; 9 Conclusions ; MOSFET Modeling and Parameter Extraction for RF IC's ; 1. Introduction ; 2. RF Modeling Approaches and Parameter Extraction Strategies for Two-Port Network 3. Three-Terminal RF MOSFET Modeling and Parameter Extraction Examples 4. Four-Terminal RF MOSFET Modeling and Parameter Extraction ; 5. Conclusions ; MOSFET Modeling for RF IC Design ; 1. Introduction ; 2. AC Small Signal Modeling ; 3 Noise Modeling ; 4. Summary RF CMOS Noise Characterization and Modeling 1. Introduction ; 2. Noise Parameters ; 3. Noise Parameter Calculation of MOSFETs ; 4. De-embedding of Noise Parameters and Required Dummy Structures ; 5. Extraction of Noise Sources in Deep Sub-micron MOSFETs 6. Design Consideration for Low Noise Circuits 7. Noise Source Modeling ; 8. Conclusions ; SOI CMOS Transistors for RF and Microwave Applications ; 1. Introduction ; 2. Overview of SOI Material, Devices and Circuits; 3. Properties of Fully-Depleted SOI MOSFET's 4. Microwave Characterization of Passive Elements on the SOI Substrate |
| Record Nr. | UNINA-9910451343103321 |
| River Edge, N.J., : World Scientific, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
CMOS RF modeling, characterization and applications [[electronic resource] /] / editors, M. Jamal Deen, Tor A. Fjeldly
| CMOS RF modeling, characterization and applications [[electronic resource] /] / editors, M. Jamal Deen, Tor A. Fjeldly |
| Pubbl/distr/stampa | River Edge, N.J., : World Scientific, c2002 |
| Descrizione fisica | 1 online resource (422 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
DeenM. Jamal
FjeldlyTor A |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Metal oxide semiconductors, Complementary
Semiconductors |
| ISBN | 981-277-776-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; RF MOS Measurements ; 1 Characterizing Devices From DC To High Frequencies ; 2 DC Measurements As A Prerequisite For RF Setups ; 3 Capacitance Measurements At 1MHz ; 4 From Y-, Z-, And H-Parameters To S-Parameters; 5 Network Analyzer Measurements ; 6 Extending The Measurement Plane To The Transistor: De-embedding
7 Checking RF Measurement Data Consistency 8 Test Structures For MOS Transistors ; 9 Conclusions ; MOSFET Modeling and Parameter Extraction for RF IC's ; 1. Introduction ; 2. RF Modeling Approaches and Parameter Extraction Strategies for Two-Port Network 3. Three-Terminal RF MOSFET Modeling and Parameter Extraction Examples 4. Four-Terminal RF MOSFET Modeling and Parameter Extraction ; 5. Conclusions ; MOSFET Modeling for RF IC Design ; 1. Introduction ; 2. AC Small Signal Modeling ; 3 Noise Modeling ; 4. Summary RF CMOS Noise Characterization and Modeling 1. Introduction ; 2. Noise Parameters ; 3. Noise Parameter Calculation of MOSFETs ; 4. De-embedding of Noise Parameters and Required Dummy Structures ; 5. Extraction of Noise Sources in Deep Sub-micron MOSFETs 6. Design Consideration for Low Noise Circuits 7. Noise Source Modeling ; 8. Conclusions ; SOI CMOS Transistors for RF and Microwave Applications ; 1. Introduction ; 2. Overview of SOI Material, Devices and Circuits; 3. Properties of Fully-Depleted SOI MOSFET's 4. Microwave Characterization of Passive Elements on the SOI Substrate |
| Record Nr. | UNINA-9910785000903321 |
| River Edge, N.J., : World Scientific, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
CMOS RF modeling, characterization and applications / / editors, M. Jamal Deen, Tor A. Fjeldly
| CMOS RF modeling, characterization and applications / / editors, M. Jamal Deen, Tor A. Fjeldly |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | River Edge, N.J., : World Scientific, c2002 |
| Descrizione fisica | 1 online resource (422 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
DeenM. Jamal
FjeldlyTor A |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Metal oxide semiconductors, Complementary
Semiconductors |
| ISBN | 981-277-776-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; RF MOS Measurements ; 1 Characterizing Devices From DC To High Frequencies ; 2 DC Measurements As A Prerequisite For RF Setups ; 3 Capacitance Measurements At 1MHz ; 4 From Y-, Z-, And H-Parameters To S-Parameters; 5 Network Analyzer Measurements ; 6 Extending The Measurement Plane To The Transistor: De-embedding
7 Checking RF Measurement Data Consistency 8 Test Structures For MOS Transistors ; 9 Conclusions ; MOSFET Modeling and Parameter Extraction for RF IC's ; 1. Introduction ; 2. RF Modeling Approaches and Parameter Extraction Strategies for Two-Port Network 3. Three-Terminal RF MOSFET Modeling and Parameter Extraction Examples 4. Four-Terminal RF MOSFET Modeling and Parameter Extraction ; 5. Conclusions ; MOSFET Modeling for RF IC Design ; 1. Introduction ; 2. AC Small Signal Modeling ; 3 Noise Modeling ; 4. Summary RF CMOS Noise Characterization and Modeling 1. Introduction ; 2. Noise Parameters ; 3. Noise Parameter Calculation of MOSFETs ; 4. De-embedding of Noise Parameters and Required Dummy Structures ; 5. Extraction of Noise Sources in Deep Sub-micron MOSFETs 6. Design Consideration for Low Noise Circuits 7. Noise Source Modeling ; 8. Conclusions ; SOI CMOS Transistors for RF and Microwave Applications ; 1. Introduction ; 2. Overview of SOI Material, Devices and Circuits; 3. Properties of Fully-Depleted SOI MOSFET's 4. Microwave Characterization of Passive Elements on the SOI Substrate |
| Record Nr. | UNINA-9910816381203321 |
| River Edge, N.J., : World Scientific, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Device modeling for analog and RF CMOS circuit design [[electronic resource] /] / Trond Ytterdal, Yuhua Cheng, Tor A. Fjeldly
| Device modeling for analog and RF CMOS circuit design [[electronic resource] /] / Trond Ytterdal, Yuhua Cheng, Tor A. Fjeldly |
| Autore | Ytterdal Trond |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley, c2003 |
| Descrizione fisica | 1 online resource (308 p.) |
| Disciplina |
621.3815
621.39/5 |
| Altri autori (Persone) |
ChengYuhua <1958->
FjeldlyTor A |
| Soggetto topico | Metal oxide semiconductors, Complementary - Computer-aided design |
| ISBN |
1-280-27187-6
9786610271870 0-470-35325-2 0-470-86434-6 0-470-86380-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Device Modeling for Analog and RF CMOS Circuit Design; Contents; Preface; 1 MOSFET Device Physics and Operation; 1.1 Introduction; 1.2 The MOS Capacitor; 1.2.1 Interface Charge; 1.2.2 Threshold Voltage; 1.2.3 MOS Capacitance; 1.2.4 MOS Charge Control Model; 1.3 Basic MOSFET Operation; 1.4 Basic MOSFET Modeling; 1.4.1 Simple Charge Control Model; 1.4.2 The Meyer Model; 1.4.3 Velocity Saturation Model; 1.4.4 Capacitance Models; 1.4.5 Comparison of Basic MOSFET Models; 1.4.6 Basic Small-signal Model; 1.5 Advanced MOSFET Modeling; 1.5.1 Modeling Approach; 1.5.2 Nonideal Effects
1.5.3 Unified MOSFET C-V ModelReferences; 2 MOSFET Fabrication; 2.1 Introduction; 2.2 Typical Planar Digital CMOS Process Flow; 2.3 RF CMOS Technology; References; 3 RF Modeling; 3.1 Introduction; 3.2 Equivalent Circuit Representation of MOS Transistors; 3.3 High-frequency Behavior of MOS Transistors and AC Small-signal Modeling; 3.3.1 Requirements for MOSFET Modeling for RF Applications; 3.3.2 Modeling of the Intrinsic Components; 3.3.3 HF Behavior and Modeling of the Extrinsic Components; 3.3.4 Non-quasi-static Behavior; 3.4 Model Parameter Extraction 3.4.1 RF Measurement and De-embedding Techniques3.4.2 Parameter Extraction; 3.5 NQS Model for RF Applications; References; 4 Noise Modeling; 4.1 Noise Sources in a MOSFET; 4.2 Flicker Noise Modeling; 4.2.1 The Physical Mechanisms of Flicker Noise; 4.2.2 Flicker Noise Models; 4.2.3 Future Work in Flicker Noise Modeling; 4.3 Thermal Noise Modeling; 4.3.1 Existing Thermal Noise Models; 4.3.2 HF Noise Parameters; 4.3.3 Analytical Calculation of the Noise Parameters; 4.3.4 Simulation and Discussions; 4.3.5 Induced Gate Noise Issue; References; 5 Proper Modeling for Accurate Distortion Analysis 5.1 Introduction5.2 Basic Terminology; 5.3 Nonlinearities in CMOS Devices and Their Modeling; 5.4 Calculation of Distortion in Analog CMOS Circuits; References; 6 The BSIM4 MOSFET Model; 6.1 An Introduction to BSIM4; 6.2 Gate Dielectric Model; 6.3 Enhanced Models for Effective DC and AC Channel Length and Width; 6.4 Threshold Voltage Model; 6.4.1 Enhanced Model for Nonuniform Lateral Doping due to Pocket (Halo) Implant; 6.4.2 Improved Models for Short-channel Effects; 6.4.3 Model for Narrow Width Effects; 6.4.4 Complete Threshold Voltage Model in BSIM4; 6.5 Channel Charge Model 6.6 Mobility Model6.7 Source/Drain Resistance Model; 6.8 I-V Model; 6.8.1 I-V Model When rdsMod = 0 (R(DS)(V) 0); 6.8.2 I-V Model When rdsMod = 1 (R(DS)(V) = 0); 6.9 Gate Tunneling Current Model; 6.9.1 Gate-to-substrate Tunneling Current I(GB); 6.9.2 Gate-to-channel and Gate-to-S/D Currents; 6.10 Substrate Current Models; 6.10.1 Model for Substrate Current due to Impact Ionization of Channel Current; 6.10.2 Models for Gate-induced Drain Leakage (GIDL) and Gate-induced Source Leakage (GISL) Currents; 6.11 Capacitance Models; 6.11.1 Intrinsic Capacitance Models 6.11.2 Fringing/Overlap Capacitance Models |
| Record Nr. | UNINA-9910143510003321 |
Ytterdal Trond
|
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| Hoboken, NJ, : Wiley, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||