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III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng
| III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng |
| Pubbl/distr/stampa | London, : Imperial College Press, c2006 |
| Descrizione fisica | 1 online resource (440 p.) |
| Disciplina |
541.377
541/.377 621.38152 |
| Altri autori (Persone) | FengZhe Chuan |
| Soggetto topico |
Semiconductors - Materials
Nitrides |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-86721-7
9786611867218 1-86094-903-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers
3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials 5.Applications of HVPE grown group III nitride materials 5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes 3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures 5.2. Growth in the 8x4 inch Configuration |
| Record Nr. | UNINA-9910458627603321 |
| London, : Imperial College Press, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng
| III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng |
| Pubbl/distr/stampa | London, : Imperial College Press, c2006 |
| Descrizione fisica | 1 online resource (440 p.) |
| Disciplina |
541.377
541/.377 621.38152 |
| Altri autori (Persone) | FengZhe Chuan |
| Soggetto topico |
Semiconductors - Materials
Nitrides |
| ISBN |
1-281-86721-7
9786611867218 1-86094-903-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers
3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials 5.Applications of HVPE grown group III nitride materials 5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes 3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures 5.2. Growth in the 8x4 inch Configuration |
| Record Nr. | UNINA-9910784745703321 |
| London, : Imperial College Press, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
III-nitride : semiconductor materials / / editor, Zhe Chuan Feng
| III-nitride : semiconductor materials / / editor, Zhe Chuan Feng |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | London, : Imperial College Press, c2006 |
| Descrizione fisica | 1 online resource (440 p.) |
| Disciplina |
541.377
541/.377 621.38152 |
| Altri autori (Persone) | FengZhe Chuan |
| Soggetto topico |
Semiconductors - Materials
Nitrides |
| ISBN |
1-281-86721-7
9786611867218 1-86094-903-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers
3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials 5.Applications of HVPE grown group III nitride materials 5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes 3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures 5.2. Growth in the 8x4 inch Configuration |
| Record Nr. | UNINA-9910821433903321 |
| London, : Imperial College Press, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||