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Porous silicon carbide and gallium nitride [[electronic resource] ] : epitaxy, catalysis, and biotechnology applications / / Randall M. Feenstra, Colin E.C. Wood
| Porous silicon carbide and gallium nitride [[electronic resource] ] : epitaxy, catalysis, and biotechnology applications / / Randall M. Feenstra, Colin E.C. Wood |
| Autore | Feenstra Randall M |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2008 |
| Descrizione fisica | 1 online resource (340 p.) |
| Disciplina |
621.3815/2
621.38152 |
| Altri autori (Persone) | WoodColin E. C |
| Soggetto topico |
Silicon carbide
Gallium nitride Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-32245-8
9786611322458 0-470-75181-9 0-470-75182-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Porous Silicon Carbide and Gallium Nitride; Contents; Preface; 1 Porous SiC Preparation, Characterization and Morphology; 1.1 Introduction; 1.2 Triangular Porous Morphology in n-type 4H-SiC; 1.2.1 Crystal Anodization; 1.2.2 Description of the Porous Structure; 1.2.3 Model of the Morphology; 1.3 Nano-columnar Pore Formation in 6H-SiC; 1.3.1 Experimental; 1.3.2 Results; 1.3.3 Discussion; 1.4 Summary; Acknowledgements; References; 2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation; 2.1 Introduction; 2.2 Formation of Porous Layer; 2.3 Diffusion in Porous SiC; 2.4 Oxidation
2.5 Contacts to Porous SiCAcknowledgements; References; 3 Growth of SiC on Porous SiC Buffer Layers; 3.1 Introduction; 3.2 SiC CVD Growth; 3.3 Growth of 3C-SiC on Porous Si via Cold-Wall Epitaxy; 3.3.1 Growth on Porous Si Substrates; 3.3.2 Growth on Stabilized Porous Si Substrates; 3.4 Growth of 3C-SiC on Porous 3C-SiC; 3.4.1 Growth in LPCVD Cold-wall Reactor; 3.5 Growth of 4H-SiC on Porous 4H-SiC; 3.6 Conclusion; Acknowledgements; References; 4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching; 4.1 Introduction 4.2 Creation of Porous GaN by Electroless Etching4.3 Morphology Characterization; 4.3.1 Porous GaN Derived from Unintentionally Doped Films; 4.3.2 Transmission Electron Microscopy (TEM) Characterization; 4.4 Luminescence of Porous GaN; 4.4.1 Cathodoluminescence (CL) of Porous GaN; 4.4.2 Photoluminescence (PL) of Porous GaN; 4.5 Raman Spectroscopy of Porous GaN; 4.5.1 Characteristics of Raman scattering in GaN; 4.5.2 Raman Spectra of Porous GaN Excited Below Band Gap; 4.6 Summary and Conclusions; Acknowledgements; References; 5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy 5.1 Introduction5.2 Morphology and Preparation of Porous SiC Substrates; 5.2.1 Porous Substrates; 5.2.2 Hydrogen Etching; 5.3 MBE Growth of GaN on Porous SiC Substrates; 5.3.1 Experimental Details; 5.3.2 Film Structure; 5.3.3 Film Strain; 5.4 Summary; Acknowledgements; References; 6 GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC; 6.1 Introduction; 6.2 Epitaxy of GaN on Porous SiNx Network; 6.2.1 Three-step Growth Method; 6.2.2 Structural and Optical Characterization; 6.2.3 Schottky Diodes (SDs) on Undoped GaN Templates; 6.2.4 Deep Level Transition Spectrum 6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN6.3.1 Formation of Porous TiN; 6.3.2 Growth of GaN on Porous TiN; 6.3.3 Characterization by XRD; 6.3.4 Characterization by TEM; 6.3.5 Characterization by PL; 6.4 Growth of GaN on Porous SiC; 6.4.1 Fabrication of Porous SiC; 6.4.2 GaN Growth on Hydrogen Polished Porous SiC; 6.4.3 GaN Growth on Chemical Mechanical Polished Porous SiC; Acknowledgements; References; 7 HVPE Growth of GaN on Porous SiC Substrates; 7.1 Introduction; 7.2 PSC Substrate Fabrication and Properties; 7.2.1 Formation of Various Types of SPSC Structure; 7.2.2 Dense Layer 7.2.3 Monitoring of Anodization Process |
| Record Nr. | UNINA-9910145695203321 |
Feenstra Randall M
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Porous silicon carbide and gallium nitride [[electronic resource] ] : epitaxy, catalysis, and biotechnology applications / / Randall M. Feenstra, Colin E.C. Wood
| Porous silicon carbide and gallium nitride [[electronic resource] ] : epitaxy, catalysis, and biotechnology applications / / Randall M. Feenstra, Colin E.C. Wood |
| Autore | Feenstra Randall M |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2008 |
| Descrizione fisica | 1 online resource (340 p.) |
| Disciplina |
621.3815/2
621.38152 |
| Altri autori (Persone) | WoodColin E. C |
| Soggetto topico |
Silicon carbide
Gallium nitride Semiconductors |
| ISBN |
1-281-32245-8
9786611322458 0-470-75181-9 0-470-75182-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Porous Silicon Carbide and Gallium Nitride; Contents; Preface; 1 Porous SiC Preparation, Characterization and Morphology; 1.1 Introduction; 1.2 Triangular Porous Morphology in n-type 4H-SiC; 1.2.1 Crystal Anodization; 1.2.2 Description of the Porous Structure; 1.2.3 Model of the Morphology; 1.3 Nano-columnar Pore Formation in 6H-SiC; 1.3.1 Experimental; 1.3.2 Results; 1.3.3 Discussion; 1.4 Summary; Acknowledgements; References; 2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation; 2.1 Introduction; 2.2 Formation of Porous Layer; 2.3 Diffusion in Porous SiC; 2.4 Oxidation
2.5 Contacts to Porous SiCAcknowledgements; References; 3 Growth of SiC on Porous SiC Buffer Layers; 3.1 Introduction; 3.2 SiC CVD Growth; 3.3 Growth of 3C-SiC on Porous Si via Cold-Wall Epitaxy; 3.3.1 Growth on Porous Si Substrates; 3.3.2 Growth on Stabilized Porous Si Substrates; 3.4 Growth of 3C-SiC on Porous 3C-SiC; 3.4.1 Growth in LPCVD Cold-wall Reactor; 3.5 Growth of 4H-SiC on Porous 4H-SiC; 3.6 Conclusion; Acknowledgements; References; 4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching; 4.1 Introduction 4.2 Creation of Porous GaN by Electroless Etching4.3 Morphology Characterization; 4.3.1 Porous GaN Derived from Unintentionally Doped Films; 4.3.2 Transmission Electron Microscopy (TEM) Characterization; 4.4 Luminescence of Porous GaN; 4.4.1 Cathodoluminescence (CL) of Porous GaN; 4.4.2 Photoluminescence (PL) of Porous GaN; 4.5 Raman Spectroscopy of Porous GaN; 4.5.1 Characteristics of Raman scattering in GaN; 4.5.2 Raman Spectra of Porous GaN Excited Below Band Gap; 4.6 Summary and Conclusions; Acknowledgements; References; 5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy 5.1 Introduction5.2 Morphology and Preparation of Porous SiC Substrates; 5.2.1 Porous Substrates; 5.2.2 Hydrogen Etching; 5.3 MBE Growth of GaN on Porous SiC Substrates; 5.3.1 Experimental Details; 5.3.2 Film Structure; 5.3.3 Film Strain; 5.4 Summary; Acknowledgements; References; 6 GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC; 6.1 Introduction; 6.2 Epitaxy of GaN on Porous SiNx Network; 6.2.1 Three-step Growth Method; 6.2.2 Structural and Optical Characterization; 6.2.3 Schottky Diodes (SDs) on Undoped GaN Templates; 6.2.4 Deep Level Transition Spectrum 6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN6.3.1 Formation of Porous TiN; 6.3.2 Growth of GaN on Porous TiN; 6.3.3 Characterization by XRD; 6.3.4 Characterization by TEM; 6.3.5 Characterization by PL; 6.4 Growth of GaN on Porous SiC; 6.4.1 Fabrication of Porous SiC; 6.4.2 GaN Growth on Hydrogen Polished Porous SiC; 6.4.3 GaN Growth on Chemical Mechanical Polished Porous SiC; Acknowledgements; References; 7 HVPE Growth of GaN on Porous SiC Substrates; 7.1 Introduction; 7.2 PSC Substrate Fabrication and Properties; 7.2.1 Formation of Various Types of SPSC Structure; 7.2.2 Dense Layer 7.2.3 Monitoring of Anodization Process |
| Record Nr. | UNINA-9910830901903321 |
|
Feenstra Randall M
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Porous silicon carbide and gallium nitride : epitaxy, catalysis, and biotechnology applications / / Randall M. Feenstra, Colin E.C. Wood
| Porous silicon carbide and gallium nitride : epitaxy, catalysis, and biotechnology applications / / Randall M. Feenstra, Colin E.C. Wood |
| Autore | Feenstra Randall M |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2008 |
| Descrizione fisica | 1 online resource (340 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) | WoodColin E. C |
| Soggetto topico |
Silicon carbide
Gallium nitride Semiconductors |
| ISBN |
1-281-32245-8
9786611322458 0-470-75181-9 0-470-75182-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Porous Silicon Carbide and Gallium Nitride; Contents; Preface; 1 Porous SiC Preparation, Characterization and Morphology; 1.1 Introduction; 1.2 Triangular Porous Morphology in n-type 4H-SiC; 1.2.1 Crystal Anodization; 1.2.2 Description of the Porous Structure; 1.2.3 Model of the Morphology; 1.3 Nano-columnar Pore Formation in 6H-SiC; 1.3.1 Experimental; 1.3.2 Results; 1.3.3 Discussion; 1.4 Summary; Acknowledgements; References; 2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation; 2.1 Introduction; 2.2 Formation of Porous Layer; 2.3 Diffusion in Porous SiC; 2.4 Oxidation
2.5 Contacts to Porous SiCAcknowledgements; References; 3 Growth of SiC on Porous SiC Buffer Layers; 3.1 Introduction; 3.2 SiC CVD Growth; 3.3 Growth of 3C-SiC on Porous Si via Cold-Wall Epitaxy; 3.3.1 Growth on Porous Si Substrates; 3.3.2 Growth on Stabilized Porous Si Substrates; 3.4 Growth of 3C-SiC on Porous 3C-SiC; 3.4.1 Growth in LPCVD Cold-wall Reactor; 3.5 Growth of 4H-SiC on Porous 4H-SiC; 3.6 Conclusion; Acknowledgements; References; 4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching; 4.1 Introduction 4.2 Creation of Porous GaN by Electroless Etching4.3 Morphology Characterization; 4.3.1 Porous GaN Derived from Unintentionally Doped Films; 4.3.2 Transmission Electron Microscopy (TEM) Characterization; 4.4 Luminescence of Porous GaN; 4.4.1 Cathodoluminescence (CL) of Porous GaN; 4.4.2 Photoluminescence (PL) of Porous GaN; 4.5 Raman Spectroscopy of Porous GaN; 4.5.1 Characteristics of Raman scattering in GaN; 4.5.2 Raman Spectra of Porous GaN Excited Below Band Gap; 4.6 Summary and Conclusions; Acknowledgements; References; 5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy 5.1 Introduction5.2 Morphology and Preparation of Porous SiC Substrates; 5.2.1 Porous Substrates; 5.2.2 Hydrogen Etching; 5.3 MBE Growth of GaN on Porous SiC Substrates; 5.3.1 Experimental Details; 5.3.2 Film Structure; 5.3.3 Film Strain; 5.4 Summary; Acknowledgements; References; 6 GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC; 6.1 Introduction; 6.2 Epitaxy of GaN on Porous SiNx Network; 6.2.1 Three-step Growth Method; 6.2.2 Structural and Optical Characterization; 6.2.3 Schottky Diodes (SDs) on Undoped GaN Templates; 6.2.4 Deep Level Transition Spectrum 6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN6.3.1 Formation of Porous TiN; 6.3.2 Growth of GaN on Porous TiN; 6.3.3 Characterization by XRD; 6.3.4 Characterization by TEM; 6.3.5 Characterization by PL; 6.4 Growth of GaN on Porous SiC; 6.4.1 Fabrication of Porous SiC; 6.4.2 GaN Growth on Hydrogen Polished Porous SiC; 6.4.3 GaN Growth on Chemical Mechanical Polished Porous SiC; Acknowledgements; References; 7 HVPE Growth of GaN on Porous SiC Substrates; 7.1 Introduction; 7.2 PSC Substrate Fabrication and Properties; 7.2.1 Formation of Various Types of SPSC Structure; 7.2.2 Dense Layer 7.2.3 Monitoring of Anodization Process |
| Record Nr. | UNINA-9910877833603321 |
|
Feenstra Randall M
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||