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CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
| CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert |
| Pubbl/distr/stampa | Singapore : , : Pan Stanford Pub., , 2013 |
| Descrizione fisica | 1 online resource (444 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) | CollaertNadine |
| Soggetto topico |
Molecular electronics
Nanotechnology |
| Soggetto genere / forma | Electronic books. |
| ISBN |
0-429-11283-1
981-4364-03-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools
8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs |
| Record Nr. | UNINA-9910461794303321 |
| Singapore : , : Pan Stanford Pub., , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
| CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert |
| Pubbl/distr/stampa | Singapore : , : Pan Stanford Pub., , 2013 |
| Descrizione fisica | 1 online resource (444 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) | CollaertNadine |
| Soggetto topico |
Molecular electronics
Nanotechnology |
| ISBN |
0-429-11283-1
981-4364-03-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools
8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs |
| Record Nr. | UNINA-9910785920503321 |
| Singapore : , : Pan Stanford Pub., , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
| CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert |
| Pubbl/distr/stampa | Singapore : , : Pan Stanford Pub., , 2013 |
| Descrizione fisica | 1 online resource (444 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) | CollaertNadine |
| Soggetto topico |
Molecular electronics
Nanotechnology |
| ISBN |
0-429-11283-1
981-4364-03-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools
8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs |
| Record Nr. | UNINA-9910818774003321 |
| Singapore : , : Pan Stanford Pub., , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
High mobility materials for CMOS applications / / edited by Nadine Collaert
| High mobility materials for CMOS applications / / edited by Nadine Collaert |
| Pubbl/distr/stampa | Cambridge, Massachusetts : , : Elsevier, , [2018] |
| Descrizione fisica | 1 online resource (390 pages) |
| Disciplina | 621.395 |
| Collana | Woodhead Publishing series in electronic and optical materials |
| Soggetto topico | Metal oxide semiconductors, Complementary |
| ISBN |
0-08-102062-7
0-08-102061-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | CMOS and Beyond CMOS : Scaling Challenges / Kelin Kuhn -- Opportunities and Challenges of Multiscale Heterogeneous Material Integration on Si Platforms for Enhanced Functionality and Performance / Aaron V.-Y. Thean -- Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices / Clement Merckling -- II-N Epitaxy on Si for Power Electronics / M. Charles, Y. Baines, E. Morvan and A. Torres -- Impact of Defects on the Performance of High-Mobility Semiconductor Devices / Eddy Simoen -- SiGe Devices / Pouya Hashemi and Takashi Ando -- III-V Devices and Technology for CMOS / Niamh Waldron -- Beyond CMOS : Steep-Slope Devices and Energy Efficient Nanoelectronics / Adrian Ionescu -- Optoelectronic Devices Integrated on Silicon / Bert Jan Offrein, Herwig Hahn and Marc Seifried -- Circuits / V. Deshpande, J. Fompeyrine and L. Czornomaz. |
| Record Nr. | UNINA-9910583487403321 |
| Cambridge, Massachusetts : , : Elsevier, , [2018] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||