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MARC Lista (tabellare)
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
Pubbl/distr/stampa Singapore : , : Pan Stanford Pub., , 2013
Descrizione fisica 1 online resource (444 p.)
Disciplina 621.3815
Altri autori (Persone) CollaertNadine
Soggetto topico Molecular electronics
Nanotechnology
Soggetto genere / forma Electronic books.
ISBN 0-429-11283-1
981-4364-03-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools
8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs
Record Nr. UNINA-9910461794303321
Singapore : , : Pan Stanford Pub., , 2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
Pubbl/distr/stampa Singapore : , : Pan Stanford Pub., , 2013
Descrizione fisica 1 online resource (444 p.)
Disciplina 621.3815
Altri autori (Persone) CollaertNadine
Soggetto topico Molecular electronics
Nanotechnology
ISBN 0-429-11283-1
981-4364-03-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools
8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs
Record Nr. UNINA-9910785920503321
Singapore : , : Pan Stanford Pub., , 2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert
Edizione [1st ed.]
Pubbl/distr/stampa Boca Raton, Fla., : Pan Standford Pub., 2012
Descrizione fisica 1 online resource (444 p.)
Disciplina 621.3815
Altri autori (Persone) CollaertNadine
Soggetto topico Molecular electronics
Nanotechnology
ISBN 1-04-022174-2
0-429-11283-1
981-4364-03-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools
8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs
Record Nr. UNINA-9910966527603321
Boca Raton, Fla., : Pan Standford Pub., 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
High mobility materials for CMOS applications / / edited by Nadine Collaert
High mobility materials for CMOS applications / / edited by Nadine Collaert
Pubbl/distr/stampa Cambridge, Massachusetts : , : Elsevier, , [2018]
Descrizione fisica 1 online resource (390 pages)
Disciplina 621.395
Collana Woodhead Publishing series in electronic and optical materials
Soggetto topico Metal oxide semiconductors, Complementary
ISBN 0-08-102062-7
0-08-102061-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CMOS and Beyond CMOS : Scaling Challenges / Kelin Kuhn -- Opportunities and Challenges of Multiscale Heterogeneous Material Integration on Si Platforms for Enhanced Functionality and Performance / Aaron V.-Y. Thean -- Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices / Clement Merckling -- II-N Epitaxy on Si for Power Electronics / M. Charles, Y. Baines, E. Morvan and A. Torres -- Impact of Defects on the Performance of High-Mobility Semiconductor Devices / Eddy Simoen -- SiGe Devices / Pouya Hashemi and Takashi Ando -- III-V Devices and Technology for CMOS / Niamh Waldron -- Beyond CMOS : Steep-Slope Devices and Energy Efficient Nanoelectronics / Adrian Ionescu -- Optoelectronic Devices Integrated on Silicon / Bert Jan Offrein, Herwig Hahn and Marc Seifried -- Circuits / V. Deshpande, J. Fompeyrine and L. Czornomaz.
Record Nr. UNINA-9910583487403321
Cambridge, Massachusetts : , : Elsevier, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui