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Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
| Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (579 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | CapperPeter |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Crystal growth |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-24169-1
9786610241699 0-470-01208-0 0-470-01207-2 |
| Classificazione | 51.12 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical) 2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields 3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards 4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth 5.4.1 Challenges |
| Record Nr. | UNINA-9910143746003321 |
| Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
| Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (579 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | CapperPeter |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Crystal growth |
| ISBN |
1-280-24169-1
9786610241699 0-470-01208-0 0-470-01207-2 |
| Classificazione | 51.12 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical) 2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields 3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards 4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth 5.4.1 Challenges |
| Record Nr. | UNINA-9910829932303321 |
| Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph
| Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2010 |
| Descrizione fisica | 1 online resource (368 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
RudolphPeter, Dozent Dr. sc. nat. |
| Soggetto topico |
Crystal growth
Dielectrics Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
3-527-63289-1
1-283-86975-6 3-527-63288-3 3-527-63287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions
1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions 2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process 4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology 6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment 7.3.1 Pregrowth Processing |
| Record Nr. | UNINA-9910140165703321 |
| Weinheim, : Wiley-VCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph
| Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2010 |
| Descrizione fisica | 1 online resource (368 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
RudolphPeter, Dozent Dr. sc. nat. |
| Soggetto topico |
Crystal growth
Dielectrics Semiconductors - Materials |
| ISBN |
3-527-63289-1
1-283-86975-6 3-527-63288-3 3-527-63287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions
1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions 2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process 4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology 6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment 7.3.1 Pregrowth Processing |
| Record Nr. | UNINA-9910829932703321 |
| Weinheim, : Wiley-VCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
| Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2008 |
| Descrizione fisica | 1 online resource (523 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
ScheelHans J |
| Soggetto topico |
Crystal growth
Crystal growth - Industrial applications Crystal growth - Technological innovations |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-86964-0
3-527-62345-0 3-527-62344-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth
2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension 4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction 6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References Part III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References 11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT) |
| Record Nr. | UNINA-9910144685403321 |
| Weinheim, : Wiley-VCH, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
| Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2008 |
| Descrizione fisica | 1 online resource (523 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
ScheelHans J |
| Soggetto topico |
Crystal growth
Crystal growth - Industrial applications Crystal growth - Technological innovations |
| ISBN |
1-283-86964-0
3-527-62345-0 3-527-62344-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth
2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension 4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction 6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References Part III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References 11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT) |
| Record Nr. | UNINA-9910829889103321 |
| Weinheim, : Wiley-VCH, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk
| Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (465 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
CapperPeter
MaukMichael |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Electronics - Materials
Optical materials Optoelectronic devices - Materials Semiconductors Liquid phase epitaxy Crystal growth |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-03220-4
9786611032203 0-470-31950-X 0-470-31949-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE |
| Record Nr. | UNINA-9910144593503321 |
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk
| Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (465 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
CapperPeter
MaukMichael |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Electronics - Materials
Optical materials Optoelectronic devices - Materials Semiconductors Liquid phase epitaxy Crystal growth |
| ISBN |
1-281-03220-4
9786611032203 0-470-31950-X 0-470-31949-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE |
| Record Nr. | UNINA-9910830383003321 |
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland
| Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland |
| Autore | Capper Peter |
| Edizione | [11th ed.] |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2011 |
| Descrizione fisica | 1 online resource (600 p.) |
| Disciplina | 661/.0726 |
| Collana | Wiley Series in Materials for Electronic & Optoelectronic Applications |
| Soggetto topico |
Mercury cadmium tellurides
Semiconductors - Doping Infrared detectors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-119-95757-5
1-282-78266-5 9786612782664 0-470-66946-2 0-470-66945-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Mercury Cadmium Telluride; Contents; Series Preface; Preface; Foreword; List of Contributors; Part One - Growth; 1 Bulk Growth of Mercury Cadmium Telluride (MCT); 2 Bulk Growth of CdZnTe/CdTe Crystals; 3 Properties of Cd(Zn)Te Relevant to Use as Substrates; 4 Substrates for the Epitaxial Growth of MCT; 5 Liquid Phase Epitaxy of MCT; 6 Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth; 7 MBE Growth of Mercury Cadmium Telluride; Part Two - Properties; 8 Mechanical and Thermal Properties; 9 Optical Properties of MCT; 10 Diffusion in MCT; 11 Defects in HgCdTe ̈C Fundamental
12 Band Structure and Related Properties of HgCdTe13 Conductivity Type Conversion; 14 Extrinsic Doping; 15 Structure and Electrical Characteristics of Metal/MCT Interfaces; 16 MCT Superlattices for VLWIR Detectors and Focal Plane Arrays; 17 Dry Plasma Processing of Mercury Cadmium Telluride and Related II-VIs; 18 MCT Photoconductive Infrared Detectors; Part Three - Applications; 19 HgCdTe Photovoltaic Infrared Detectors; 20 Nonequilibrium, Dual-Band and Emission Devices; 21 HgCdTe Electron Avalanche Photodiodes (EAPDs); 22 Room Temperature IR Photodetectors; Index |
| Record Nr. | UNINA-9910140800603321 |
Capper Peter
|
||
| Chichester, England : , : Wiley, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland
| Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland |
| Autore | Capper Peter |
| Edizione | [11th ed.] |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2011 |
| Descrizione fisica | 1 online resource (600 p.) |
| Disciplina | 661/.0726 |
| Collana | Wiley Series in Materials for Electronic & Optoelectronic Applications |
| Soggetto topico |
Mercury cadmium tellurides
Semiconductors - Doping Infrared detectors - Materials |
| ISBN |
1-119-95757-5
1-282-78266-5 9786612782664 0-470-66946-2 0-470-66945-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Mercury Cadmium Telluride; Contents; Series Preface; Preface; Foreword; List of Contributors; Part One - Growth; 1 Bulk Growth of Mercury Cadmium Telluride (MCT); 2 Bulk Growth of CdZnTe/CdTe Crystals; 3 Properties of Cd(Zn)Te Relevant to Use as Substrates; 4 Substrates for the Epitaxial Growth of MCT; 5 Liquid Phase Epitaxy of MCT; 6 Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth; 7 MBE Growth of Mercury Cadmium Telluride; Part Two - Properties; 8 Mechanical and Thermal Properties; 9 Optical Properties of MCT; 10 Diffusion in MCT; 11 Defects in HgCdTe ̈C Fundamental
12 Band Structure and Related Properties of HgCdTe13 Conductivity Type Conversion; 14 Extrinsic Doping; 15 Structure and Electrical Characteristics of Metal/MCT Interfaces; 16 MCT Superlattices for VLWIR Detectors and Focal Plane Arrays; 17 Dry Plasma Processing of Mercury Cadmium Telluride and Related II-VIs; 18 MCT Photoconductive Infrared Detectors; Part Three - Applications; 19 HgCdTe Photovoltaic Infrared Detectors; 20 Nonequilibrium, Dual-Band and Emission Devices; 21 HgCdTe Electron Avalanche Photodiodes (EAPDs); 22 Room Temperature IR Photodetectors; Index |
| Record Nr. | UNINA-9910830146103321 |
|
Capper Peter
|
||
| Chichester, England : , : Wiley, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
