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Silicon carbide power devices [[electronic resource] /] / B. Jayant Baliga
| Silicon carbide power devices [[electronic resource] /] / B. Jayant Baliga |
| Autore | Baliga B. Jayant <1948-> |
| Pubbl/distr/stampa | New Jersey, : World Scientific, c2005 |
| Descrizione fisica | 1 online resource (xxi, 503 p. ) : ill. (some col.) |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN | 981-277-452-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | ch. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis. |
| Record Nr. | UNINA-9910450985103321 |
Baliga B. Jayant <1948->
|
||
| New Jersey, : World Scientific, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon carbide power devices [[electronic resource] /] / B. Jayant Baliga
| Silicon carbide power devices [[electronic resource] /] / B. Jayant Baliga |
| Autore | Baliga B. Jayant <1948-> |
| Pubbl/distr/stampa | New Jersey, : World Scientific, c2005 |
| Descrizione fisica | 1 online resource (xxi, 503 p. ) : ill. (some col.) |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
| ISBN | 981-277-452-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | ch. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis. |
| Record Nr. | UNINA-9910785080703321 |
|
Baliga B. Jayant <1948->
|
||
| New Jersey, : World Scientific, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon RF power MOSFETS [[electronic resource] /] / B. Jayant Baliga
| Silicon RF power MOSFETS [[electronic resource] /] / B. Jayant Baliga |
| Autore | Baliga B. Jayant <1948-> |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2005 |
| Descrizione fisica | 1 online resource (320 p.) |
| Disciplina | 621.3815/284 |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Field-effect transistors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-88100-7
9786611881009 981-256-932-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Preface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; Index |
| Record Nr. | UNINA-9910450185403321 |
|
Baliga B. Jayant <1948->
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon RF power MOSFETS [[electronic resource] /] / B. Jayant Baliga
| Silicon RF power MOSFETS [[electronic resource] /] / B. Jayant Baliga |
| Autore | Baliga B. Jayant <1948-> |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2005 |
| Descrizione fisica | 1 online resource (320 p.) |
| Disciplina | 621.3815/284 |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Field-effect transistors |
| ISBN |
1-281-88100-7
9786611881009 981-256-932-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Preface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; Index |
| Record Nr. | UNINA-9910783641103321 |
|
Baliga B. Jayant <1948->
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||