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The BaSIC topology : a revolutionary power device control strategy / / B. Jayant Baliga, Ajit Kanale
The BaSIC topology : a revolutionary power device control strategy / / B. Jayant Baliga, Ajit Kanale
Autore Baliga B. Jayant
Pubbl/distr/stampa Cham : , : Springer, , [2025]
Descrizione fisica 1 online resource (xxii, 316 pages) : illustrations
Disciplina 621.381044
Soggetto topico Power semiconductors
Electric power production
Power electronics
Electronic circuits
Electronics
Power Electronics
Electronic Circuits and Systems
Electronics and Microelectronics, Instrumentation
Electrical Power Engineering
ISBN 9783031866302
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction -- Short-circuit withstand capability -- Conventional current sensing in devices -- The BaSIC topology concept -- Application of the BaSIC Topology to Si IGBTs -- Application of the BaSIC Topology to SiC Power MOSFETs -- Application of the BaSIC Topology to GaN HEMT devices -- Current Sensing using the BaSIC Topology -- Eliminating repetitive short-circuit failure using the BaSIC Topology -- Avalanche ruggedness of the BaSIC Topology to GaN HEMT devices -- Optimization of Silicon Depletion-Mode MOSFETs for the BaSIC Topology -- Selection Methodology for Silicon Enhancement-Mode MOSFETs for the BaSIC Topology -- Comparison of the BaSIC Topology to the conventional DESAT topology -- Synopsys.
Record Nr. UNINA-9911003588303321
Baliga B. Jayant  
Cham : , : Springer, , [2025]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Fundamentals of Power Semiconductor Devices / / by B. Jayant Baliga
Fundamentals of Power Semiconductor Devices / / by B. Jayant Baliga
Autore Baliga B. Jayant
Edizione [2nd ed. 2019.]
Pubbl/distr/stampa Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019
Descrizione fisica 1 online resource (XXXII, 1086 p. 838 illus., 559 illus. in color.)
Disciplina 621.38152
Soggetto topico Electronic circuits
Electronics
Microelectronics
Circuits and Systems
Electronic Circuits and Devices
Electronics and Microelectronics, Instrumentation
ISBN 3-319-93988-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction -- Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Insulated Gate Bipolar Thyristors -- Synopsis.
Record Nr. UNINA-9910337643603321
Baliga B. Jayant  
Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui