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Fabrication of GaAs devices / / by Albert G. Baca and Carol I.H. Ashby



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Autore: Baca A. G Visualizza persona
Titolo: Fabrication of GaAs devices / / by Albert G. Baca and Carol I.H. Ashby Visualizza cluster
Pubblicazione: London, : Institution of Electrical Engineers, c2005
Descrizione fisica: 1 online resource (370 p.)
Disciplina: 620.1
620.1/93
620.193
621.38152
Soggetto topico: Electronics
Gallium arsenide semiconductors
Altri autori: AshbyCarol Iris Hill <1953->  
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliographical references and index.
Nota di contenuto: CONTENTS; Acknowledgment; Abbreviations; 1. Introduction to GaAs devices; 2. Semiconductor properties, growth, characterisation and processing techniques; 3. Cleaning and passivation of GaAs and related alloys; 4. Wet etching and photolithography of GaAs and related alloys; 5. Dry etching of GaAs and related alloys; 6. Ohmic contacts; 7. Schottky contacts; 8. Field effect transistors; 9. Heterojunction bipolar transistors; 10. Wet oxidation for optoelectronic and MIS GaAs devices; Glossary; Index
Sommario/riassunto: This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching.
Titolo autorizzato: Fabrication of GaAs devices  Visualizza cluster
ISBN: 1-282-26334-X
9786612263347
1-61583-323-4
1-84919-068-2
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9911007374103321
Lo trovi qui: Univ. Federico II
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Serie: SPE processing series ; ; no. 6.