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| Autore: |
Baca A. G
|
| Titolo: |
Fabrication of GaAs devices / / by Albert G. Baca and Carol I.H. Ashby
|
| Pubblicazione: | London, : Institution of Electrical Engineers, c2005 |
| Descrizione fisica: | 1 online resource (370 p.) |
| Disciplina: | 620.1 |
| 620.1/93 | |
| 620.193 | |
| 621.38152 | |
| Soggetto topico: | Electronics |
| Gallium arsenide semiconductors | |
| Altri autori: |
AshbyCarol Iris Hill <1953->
|
| Note generali: | Description based upon print version of record. |
| Nota di bibliografia: | Includes bibliographical references and index. |
| Nota di contenuto: | CONTENTS; Acknowledgment; Abbreviations; 1. Introduction to GaAs devices; 2. Semiconductor properties, growth, characterisation and processing techniques; 3. Cleaning and passivation of GaAs and related alloys; 4. Wet etching and photolithography of GaAs and related alloys; 5. Dry etching of GaAs and related alloys; 6. Ohmic contacts; 7. Schottky contacts; 8. Field effect transistors; 9. Heterojunction bipolar transistors; 10. Wet oxidation for optoelectronic and MIS GaAs devices; Glossary; Index |
| Sommario/riassunto: | This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching. |
| Titolo autorizzato: | Fabrication of GaAs devices ![]() |
| ISBN: | 1-282-26334-X |
| 9786612263347 | |
| 1-61583-323-4 | |
| 1-84919-068-2 | |
| Formato: | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9911007374103321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |