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Mosfet modeling for VLSI simulation [[electronic resource] ] : theory and practice / / Narain Arora
| Mosfet modeling for VLSI simulation [[electronic resource] ] : theory and practice / / Narain Arora |
| Autore | Arora N (Narain), <1943-> |
| Pubbl/distr/stampa | Singapore, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (633 p.) |
| Disciplina | 621.395 |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Integrated circuits - Very large scale integration Integrated circuits - Very large scale integration - Computer simulation |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-12088-X
9786611120887 981-270-758-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K
Appendix B. Some Important Physical Constants at 300 KAppendix C. Unit Conversion Factors; Appendix D. Magnitude Prefixes; Appendix E. Methods of Calculating s from the Implicit Eq. (6.23) or (6.30); Appendix F. Charge Based MOSFET Intrinsic Capacitances; Appendix G. Linear Regression; Appendix H. Basic Statistical and Probability Theory; Appendix I. List of Widely Used Statistical Package Programs; 862-X1-missing.pdf; Subject Index |
| Record Nr. | UNINA-9910450689003321 |
Arora N (Narain), <1943->
|
||
| Singapore, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Mosfet modeling for VLSI simulation [[electronic resource] ] : theory and practice / / Narain Arora
| Mosfet modeling for VLSI simulation [[electronic resource] ] : theory and practice / / Narain Arora |
| Autore | Arora N (Narain), <1943-> |
| Pubbl/distr/stampa | Singapore, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (633 p.) |
| Disciplina | 621.395 |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Integrated circuits - Very large scale integration Integrated circuits - Very large scale integration - Computer simulation |
| ISBN |
1-281-12088-X
9786611120887 981-270-758-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K
Appendix B. Some Important Physical Constants at 300 KAppendix C. Unit Conversion Factors; Appendix D. Magnitude Prefixes; Appendix E. Methods of Calculating s from the Implicit Eq. (6.23) or (6.30); Appendix F. Charge Based MOSFET Intrinsic Capacitances; Appendix G. Linear Regression; Appendix H. Basic Statistical and Probability Theory; Appendix I. List of Widely Used Statistical Package Programs; 862-X1-missing.pdf; Subject Index |
| Record Nr. | UNINA-9910784046703321 |
|
Arora N (Narain), <1943->
|
||
| Singapore, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Mosfet modeling for VLSI simulation : theory and practice / / Narain Arora
| Mosfet modeling for VLSI simulation : theory and practice / / Narain Arora |
| Autore | Arora N (Narain), <1943-> |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Singapore, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (633 p.) |
| Disciplina | 621.395 |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Integrated circuits - Very large scale integration Integrated circuits - Very large scale integration - Computer simulation |
| ISBN |
1-281-12088-X
9786611120887 981-270-758-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K
Appendix B. Some Important Physical Constants at 300 KAppendix C. Unit Conversion Factors; Appendix D. Magnitude Prefixes; Appendix E. Methods of Calculating s from the Implicit Eq. (6.23) or (6.30); Appendix F. Charge Based MOSFET Intrinsic Capacitances; Appendix G. Linear Regression; Appendix H. Basic Statistical and Probability Theory; Appendix I. List of Widely Used Statistical Package Programs; 862-X1-missing.pdf; Subject Index |
| Record Nr. | UNINA-9910814604803321 |
|
Arora N (Narain), <1943->
|
||
| Singapore, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||