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RF and mm-wave power generation in silicon / / edited by Hua Wang, Kaushik Sengupta ; contributors, David J. Allstot [and thirty-five others]
RF and mm-wave power generation in silicon / / edited by Hua Wang, Kaushik Sengupta ; contributors, David J. Allstot [and thirty-five others]
Pubbl/distr/stampa Amsterdam, Netherlands : , : Academic Press, , 2016
Descrizione fisica 1 online resource (578 p.)
Disciplina 621.384
Soggetto topico Millimeter wave devices
Silicon - Electric properties
Millimeter wave communication systems
ISBN 0-12-409522-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; RF and mm-Wave Power Generation in Silicon; Copyright Page; Contents; List of Contributors; Biography; Acknowledgment; 1 Introduction; 1.1 What Are the Key PA Performance Metrics?; 1.1.1 PA Output Power; 1.1.2 PA Power Efficiency; 1.1.3 PA Linearity; 1.1.4 PA Robustness to Antenna Load Variations; 1.2 Unique Advantages of Silicon-Based PAs; 1.3 Silicon-Based mm-Wave and THz Signal Generation-A New Frontier; References; I. Power amplifier design methodologies; 2 Power amplifier fundamentals; 2.1 Power Generation and Power Matching; 2.1.1 I-V Curve and Power Generation Capability
2.5.1 Ideal Design Formula of Class E Amplifier2.5.2 Real Operation of Class-E Amplifier; 2.5.3 Operation of the Class E PA Beyond Maximum Operation Frequency; Reference; Further Reading; II. RF Power Amplifier Design Examples; 3 CMOS power amplifier design for wireless connectivity applications: a highly linear WLAN power amplifier in advanced SoC CMOS; 3.1 Introduction; 3.2 Design Considerations of Class-AB PA for WLAN; 3.3 Circuit Architecture and Layout Structure; 3.4 Shielded Concentric Transformers; 3.5 Circuit Implementations
5 Energy-efficiency enhancement and linear amplifications: a transformer-based Doherty approach5.1 Introduction; 5.2 Optimization of SCT Transformer-Based Doherty Power Amplifiers; 5.2.1 Optimization of 1:1 Transformers; 5.2.2 Optimization of Series-Combining Transformers (SCT) for Doherty Operation; 5.2.2.1 Analysis of SCTs at back-off; 5.2.2.2 Load modulation in SCT transformer-based Doherty PAs; 5.2.2.3 Optimization of SCT transformer-based Doherty PAs; 5.3 Implementation of SCT Transformer-Based Doherty Power Amplifier for WLAN Applications; 5.4 Measurement Results; 5.5 Conclusion
References
Record Nr. UNINA-9910797996803321
Amsterdam, Netherlands : , : Academic Press, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
RF and mm-wave power generation in silicon / / edited by Hua Wang, Kaushik Sengupta ; contributors, David J. Allstot [and thirty-five others]
RF and mm-wave power generation in silicon / / edited by Hua Wang, Kaushik Sengupta ; contributors, David J. Allstot [and thirty-five others]
Pubbl/distr/stampa Amsterdam, Netherlands : , : Academic Press, , 2016
Descrizione fisica 1 online resource (578 p.)
Disciplina 621.384
Soggetto topico Millimeter wave devices
Silicon - Electric properties
Millimeter wave communication systems
ISBN 0-12-409522-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; RF and mm-Wave Power Generation in Silicon; Copyright Page; Contents; List of Contributors; Biography; Acknowledgment; 1 Introduction; 1.1 What Are the Key PA Performance Metrics?; 1.1.1 PA Output Power; 1.1.2 PA Power Efficiency; 1.1.3 PA Linearity; 1.1.4 PA Robustness to Antenna Load Variations; 1.2 Unique Advantages of Silicon-Based PAs; 1.3 Silicon-Based mm-Wave and THz Signal Generation-A New Frontier; References; I. Power amplifier design methodologies; 2 Power amplifier fundamentals; 2.1 Power Generation and Power Matching; 2.1.1 I-V Curve and Power Generation Capability
2.5.1 Ideal Design Formula of Class E Amplifier2.5.2 Real Operation of Class-E Amplifier; 2.5.3 Operation of the Class E PA Beyond Maximum Operation Frequency; Reference; Further Reading; II. RF Power Amplifier Design Examples; 3 CMOS power amplifier design for wireless connectivity applications: a highly linear WLAN power amplifier in advanced SoC CMOS; 3.1 Introduction; 3.2 Design Considerations of Class-AB PA for WLAN; 3.3 Circuit Architecture and Layout Structure; 3.4 Shielded Concentric Transformers; 3.5 Circuit Implementations
5 Energy-efficiency enhancement and linear amplifications: a transformer-based Doherty approach5.1 Introduction; 5.2 Optimization of SCT Transformer-Based Doherty Power Amplifiers; 5.2.1 Optimization of 1:1 Transformers; 5.2.2 Optimization of Series-Combining Transformers (SCT) for Doherty Operation; 5.2.2.1 Analysis of SCTs at back-off; 5.2.2.2 Load modulation in SCT transformer-based Doherty PAs; 5.2.2.3 Optimization of SCT transformer-based Doherty PAs; 5.3 Implementation of SCT Transformer-Based Doherty Power Amplifier for WLAN Applications; 5.4 Measurement Results; 5.5 Conclusion
References
Record Nr. UNINA-9910807431203321
Amsterdam, Netherlands : , : Academic Press, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui