Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Cryptography and Coding [[electronic resource] ] : 17th IMA International Conference, IMACC 2019, Oxford, UK, December 16–18, 2019, Proceedings / / edited by Martin Albrecht
| Cryptography and Coding [[electronic resource] ] : 17th IMA International Conference, IMACC 2019, Oxford, UK, December 16–18, 2019, Proceedings / / edited by Martin Albrecht |
| Edizione | [1st ed. 2019.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 |
| Descrizione fisica | 1 online resource (viii, 367 pages) : illustrations |
| Disciplina | 005.82 |
| Collana | Security and Cryptology |
| Soggetto topico |
Data encryption (Computer science)
Data protection Computer organization Application software Software engineering Cryptology Security Computer Systems Organization and Communication Networks Information Systems Applications (incl. Internet) Software Engineering/Programming and Operating Systems |
| ISBN | 3-030-35199-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | A Framework for UC-Secure Commitments from Publicly Computable Smooth Projective Hashing -- Decryption Algorithm Substitution Attacks -- Subversion-Resistant Simulation (Knowledge) Sound NIZKs -- Classification of self-dual codes of length 20 over nmathbb{Z}_4 and length at most 18 over nmathbb{F}_2 + unmathbb{F}_2 -- A Framework for Universally Composable Oblivious Transfer from One-Round Key-Exchange -- Efficient Fully Secure Leakage-Deterring Encryption -- Sharing the LUOV: Threshold Post-Quantum Signatures -- Commodity-Based 2PC for Arithmetic Circuits -- Improved Low-Memory Subset Sum and LPN Algorithms via Multiple Collisions -- Forgery Attacks on FlexAE and FlexAEAD -- Key Recovery Attacks on Some Rank Metric Code-based Signatures -- On the Security of Multikey Homomorphic Encryption -- RLWE-based Zero-Knowledge Proofs for linear and multiplicative relations -- Cryptanalysis of a Protocol for Efficient Sorting on SHE Encrypted Data -- Quantum-Secure (Non-)Sequential Aggregate Message Authentication Codes -- SO-CCA Secure PKE in the Quantum Random Oracle Model or the Quantum Ideal Cipher Model -- Distributing any Elliptic Curve Based Protocol. |
| Record Nr. | UNISA-996466193403316 |
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Cryptography and Coding : 17th IMA International Conference, IMACC 2019, Oxford, UK, December 16–18, 2019, Proceedings / / edited by Martin Albrecht
| Cryptography and Coding : 17th IMA International Conference, IMACC 2019, Oxford, UK, December 16–18, 2019, Proceedings / / edited by Martin Albrecht |
| Edizione | [1st ed. 2019.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 |
| Descrizione fisica | 1 online resource (viii, 367 pages) : illustrations |
| Disciplina |
005.82
005.824 |
| Collana | Security and Cryptology |
| Soggetto topico |
Data encryption (Computer science)
Data protection Computer organization Application software Software engineering Cryptology Security Computer Systems Organization and Communication Networks Information Systems Applications (incl. Internet) Software Engineering/Programming and Operating Systems |
| ISBN | 3-030-35199-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | A Framework for UC-Secure Commitments from Publicly Computable Smooth Projective Hashing -- Decryption Algorithm Substitution Attacks -- Subversion-Resistant Simulation (Knowledge) Sound NIZKs -- Classification of self-dual codes of length 20 over nmathbb{Z}_4 and length at most 18 over nmathbb{F}_2 + unmathbb{F}_2 -- A Framework for Universally Composable Oblivious Transfer from One-Round Key-Exchange -- Efficient Fully Secure Leakage-Deterring Encryption -- Sharing the LUOV: Threshold Post-Quantum Signatures -- Commodity-Based 2PC for Arithmetic Circuits -- Improved Low-Memory Subset Sum and LPN Algorithms via Multiple Collisions -- Forgery Attacks on FlexAE and FlexAEAD -- Key Recovery Attacks on Some Rank Metric Code-based Signatures -- On the Security of Multikey Homomorphic Encryption -- RLWE-based Zero-Knowledge Proofs for linear and multiplicative relations -- Cryptanalysis of a Protocol for Efficient Sorting on SHE Encrypted Data -- Quantum-Secure (Non-)Sequential Aggregate Message Authentication Codes -- SO-CCA Secure PKE in the Quantum Random Oracle Model or the Quantum Ideal Cipher Model -- Distributing any Elliptic Curve Based Protocol. |
| Record Nr. | UNINA-9910364955603321 |
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nitride semiconductors [[electronic resource] ] : handbook on materials and devices / / Pierre Ruterana, Martin Albrecht, Jörg Neugebauer
| Nitride semiconductors [[electronic resource] ] : handbook on materials and devices / / Pierre Ruterana, Martin Albrecht, Jörg Neugebauer |
| Autore | Ruterana Pierre |
| Pubbl/distr/stampa | Weinheim ; ; [Great Britain], : Wiley-VCH, c2003 |
| Descrizione fisica | 1 online resource (688 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
AlbrechtMartin
NeugebauerJörg |
| Soggetto topico |
Nitrides
Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-85437-5
9786610854370 3-527-60740-4 3-527-60764-1 1-60119-282-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nitride Semiconductors Handbook on Materials and Devices; Contents; Preface; List of Contributors; Part 1 Material; 1 High-Pressure Crystallization of GaN; 1.1 Introduction; 1.2 High-Pressure Crystallization of GaN; 1.2.1 Thermodynamics - Properties of GaN-Ga-N(2) System; 1.2.2 Dissolution Kinetics of N(2) and Crystal Growth Mechanism; 1.2.3 What Happens with GaN at High Temperature when the N(2) Pressure is too Low?; 1.2.4 Crystallization of GaN Using High Nitrogen Pressure Solution Growth (HNPSG) Method - Experimental; 1.2.5 Properties of GaN Single Crystals Obtained by HNPSG Method
1.2.5.1 Crystals Grown without Intentional Seeding1.2.5.2 Seeded Growth of GaN by HNPS Method; 1.2.6 Physical Properties of GaN Crystals, Grown by HNPS Method; 1.2.6.1 Point Defects; 1.2.6.2 Extended Defects; 1.3 Epitaxy on Bulk GaN; 1.3.1 Introduction; 1.3.2 Metalorganic Chemical Vapor Epitaxy on GaN Substrates in HPRC Unipress; 1.3.3 Molecular Beam Epitaxy; 1.4 Optoelectronic Devices; 1.4.1 Introduction; 1.4.2 Light Emitting Diodes Fabricated on Bulk GaN in HPRC; 1.4.3 Laser Diode Structures; 1.5 Conclusions; 1.6 Acknowledgment; 1.7 References; 2 Epitaxial Lateral Overgrowth of GaN 2.1 Heteroepitaxial GaN2.1.1 Introduction; 2.1.2 Growth of GaN/Sapphire and 6H-SiC Templates; 2.1.2.1 2D Growth Mode (GaN/Sapphire); 2.1.2.2 3D Growth Mode (GaN/Sapphire); 2.1.3 Defects in GaN/Sapphire and GaN/6H-SiC; 2.1.3.1 Extended Defects; 2.1.3.2 Native Defects; 2.1.3.3 Defect-Related Optical Properties; 2.1.3.4 Device Performance Limitations; 2.1.3.5 Electronic Properties of Defects; 2.2 Epitaxial Lateral Overgrowth (ELO); 2.2.1 Standard ELO; 2.2.2 Rationale; 2.2.3 Experimental; 2.3 One-Step Lateral Overgrowth (1S-ELO); 2.3.1 ELO in MOVPE; 2.3.1.1 Morphology and Defects 2.3.1.2 Structural Assessment2.3.1.3 Kinetics; 2.3.1.4 In-Depth Optical Assessment of MOVPE ELO GaN; 2.3.2 HVPE; 2.3.2.1 In-Depth Assessment of HVPE ELO GaN; 2.3.2.2 Stripe Openings along ; 2.3.2.3 Selective Area Epitaxy (SAE); 2.3.2.4 (C(2)H(5))(2)GaCl as Ga Source; 2.3.2.5 Stress Generation; 2.3.3 Sublimation; 2.3.4 New Developments; 2.3.4.1 ELO on Si; 2.3.4.2 Using W as Mask; 2.3.4.3 Maskless ELO; 2.3.5 Improvements of the Standard ELO Method; 2.3.6 Pendeo-Epitaxy; 2.3.7 ELO of Cubic GaN; 2.4 Two-Step ELO (2S-ELO); 2.4.1 Experimental (MOVPE); 2.4.2 In-Depth Assessment of 2S-ELO 2.4.2.1 Cathodoluminescence2.4.2.2 Luminescence of GaN by Epitaxial Lateral Overgrowth; 2.4.2.3 Time-resolved Photoluminescence; 2.4.2.4 Deep Level Transient Spectroscopy (DLTS); 2.4.2.5 Strain Distribution; 2.4.3 Assessment of HVPE; 2.4.4 ELO and Yellow Luminescence; 2.4.5 Conclusion; 2.5 New Trends; 2.5.1 3S-ELO; 2.5.2 Further Improvements; 2.6 Theoretical Analysis of ELO; 2.7 Acknowledgments; 2.8 References; 3 Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides; 3.1 Introduction; 3.2 The Nitrogen Plasma Source; 3.2.1 The Different Sources; 3.2.2 The Nitrogen Plasma 3.2.3 Characterization of the HD25 RF Source by Optical Emission Spectroscopy |
| Record Nr. | UNINA-9910142394403321 |
Ruterana Pierre
|
||
| Weinheim ; ; [Great Britain], : Wiley-VCH, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nitride semiconductors [[electronic resource] ] : handbook on materials and devices / / Pierre Ruterana, Martin Albrecht, Jörg Neugebauer
| Nitride semiconductors [[electronic resource] ] : handbook on materials and devices / / Pierre Ruterana, Martin Albrecht, Jörg Neugebauer |
| Autore | Ruterana Pierre |
| Pubbl/distr/stampa | Weinheim ; ; [Great Britain], : Wiley-VCH, c2003 |
| Descrizione fisica | 1 online resource (688 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
AlbrechtMartin
NeugebauerJörg |
| Soggetto topico |
Nitrides
Semiconductors - Materials |
| ISBN |
1-280-85437-5
9786610854370 3-527-60740-4 3-527-60764-1 1-60119-282-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nitride Semiconductors Handbook on Materials and Devices; Contents; Preface; List of Contributors; Part 1 Material; 1 High-Pressure Crystallization of GaN; 1.1 Introduction; 1.2 High-Pressure Crystallization of GaN; 1.2.1 Thermodynamics - Properties of GaN-Ga-N(2) System; 1.2.2 Dissolution Kinetics of N(2) and Crystal Growth Mechanism; 1.2.3 What Happens with GaN at High Temperature when the N(2) Pressure is too Low?; 1.2.4 Crystallization of GaN Using High Nitrogen Pressure Solution Growth (HNPSG) Method - Experimental; 1.2.5 Properties of GaN Single Crystals Obtained by HNPSG Method
1.2.5.1 Crystals Grown without Intentional Seeding1.2.5.2 Seeded Growth of GaN by HNPS Method; 1.2.6 Physical Properties of GaN Crystals, Grown by HNPS Method; 1.2.6.1 Point Defects; 1.2.6.2 Extended Defects; 1.3 Epitaxy on Bulk GaN; 1.3.1 Introduction; 1.3.2 Metalorganic Chemical Vapor Epitaxy on GaN Substrates in HPRC Unipress; 1.3.3 Molecular Beam Epitaxy; 1.4 Optoelectronic Devices; 1.4.1 Introduction; 1.4.2 Light Emitting Diodes Fabricated on Bulk GaN in HPRC; 1.4.3 Laser Diode Structures; 1.5 Conclusions; 1.6 Acknowledgment; 1.7 References; 2 Epitaxial Lateral Overgrowth of GaN 2.1 Heteroepitaxial GaN2.1.1 Introduction; 2.1.2 Growth of GaN/Sapphire and 6H-SiC Templates; 2.1.2.1 2D Growth Mode (GaN/Sapphire); 2.1.2.2 3D Growth Mode (GaN/Sapphire); 2.1.3 Defects in GaN/Sapphire and GaN/6H-SiC; 2.1.3.1 Extended Defects; 2.1.3.2 Native Defects; 2.1.3.3 Defect-Related Optical Properties; 2.1.3.4 Device Performance Limitations; 2.1.3.5 Electronic Properties of Defects; 2.2 Epitaxial Lateral Overgrowth (ELO); 2.2.1 Standard ELO; 2.2.2 Rationale; 2.2.3 Experimental; 2.3 One-Step Lateral Overgrowth (1S-ELO); 2.3.1 ELO in MOVPE; 2.3.1.1 Morphology and Defects 2.3.1.2 Structural Assessment2.3.1.3 Kinetics; 2.3.1.4 In-Depth Optical Assessment of MOVPE ELO GaN; 2.3.2 HVPE; 2.3.2.1 In-Depth Assessment of HVPE ELO GaN; 2.3.2.2 Stripe Openings along ; 2.3.2.3 Selective Area Epitaxy (SAE); 2.3.2.4 (C(2)H(5))(2)GaCl as Ga Source; 2.3.2.5 Stress Generation; 2.3.3 Sublimation; 2.3.4 New Developments; 2.3.4.1 ELO on Si; 2.3.4.2 Using W as Mask; 2.3.4.3 Maskless ELO; 2.3.5 Improvements of the Standard ELO Method; 2.3.6 Pendeo-Epitaxy; 2.3.7 ELO of Cubic GaN; 2.4 Two-Step ELO (2S-ELO); 2.4.1 Experimental (MOVPE); 2.4.2 In-Depth Assessment of 2S-ELO 2.4.2.1 Cathodoluminescence2.4.2.2 Luminescence of GaN by Epitaxial Lateral Overgrowth; 2.4.2.3 Time-resolved Photoluminescence; 2.4.2.4 Deep Level Transient Spectroscopy (DLTS); 2.4.2.5 Strain Distribution; 2.4.3 Assessment of HVPE; 2.4.4 ELO and Yellow Luminescence; 2.4.5 Conclusion; 2.5 New Trends; 2.5.1 3S-ELO; 2.5.2 Further Improvements; 2.6 Theoretical Analysis of ELO; 2.7 Acknowledgments; 2.8 References; 3 Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides; 3.1 Introduction; 3.2 The Nitrogen Plasma Source; 3.2.1 The Different Sources; 3.2.2 The Nitrogen Plasma 3.2.3 Characterization of the HD25 RF Source by Optical Emission Spectroscopy |
| Record Nr. | UNINA-9910829986603321 |
|
Ruterana Pierre
|
||
| Weinheim ; ; [Great Britain], : Wiley-VCH, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nitride semiconductors : handbook on materials and devices / / Pierre Ruterana, Martin Albrecht, Jorg Neugebauer
| Nitride semiconductors : handbook on materials and devices / / Pierre Ruterana, Martin Albrecht, Jorg Neugebauer |
| Autore | Ruterana Pierre |
| Pubbl/distr/stampa | Weinheim ; ; [Great Britain], : Wiley-VCH, c2003 |
| Descrizione fisica | 1 online resource (688 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
AlbrechtMartin
NeugebauerJorg |
| Soggetto topico |
Nitrides
Semiconductors - Materials |
| ISBN |
1-280-85437-5
9786610854370 3-527-60740-4 3-527-60764-1 1-60119-282-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nitride Semiconductors Handbook on Materials and Devices; Contents; Preface; List of Contributors; Part 1 Material; 1 High-Pressure Crystallization of GaN; 1.1 Introduction; 1.2 High-Pressure Crystallization of GaN; 1.2.1 Thermodynamics - Properties of GaN-Ga-N(2) System; 1.2.2 Dissolution Kinetics of N(2) and Crystal Growth Mechanism; 1.2.3 What Happens with GaN at High Temperature when the N(2) Pressure is too Low?; 1.2.4 Crystallization of GaN Using High Nitrogen Pressure Solution Growth (HNPSG) Method - Experimental; 1.2.5 Properties of GaN Single Crystals Obtained by HNPSG Method
1.2.5.1 Crystals Grown without Intentional Seeding1.2.5.2 Seeded Growth of GaN by HNPS Method; 1.2.6 Physical Properties of GaN Crystals, Grown by HNPS Method; 1.2.6.1 Point Defects; 1.2.6.2 Extended Defects; 1.3 Epitaxy on Bulk GaN; 1.3.1 Introduction; 1.3.2 Metalorganic Chemical Vapor Epitaxy on GaN Substrates in HPRC Unipress; 1.3.3 Molecular Beam Epitaxy; 1.4 Optoelectronic Devices; 1.4.1 Introduction; 1.4.2 Light Emitting Diodes Fabricated on Bulk GaN in HPRC; 1.4.3 Laser Diode Structures; 1.5 Conclusions; 1.6 Acknowledgment; 1.7 References; 2 Epitaxial Lateral Overgrowth of GaN 2.1 Heteroepitaxial GaN2.1.1 Introduction; 2.1.2 Growth of GaN/Sapphire and 6H-SiC Templates; 2.1.2.1 2D Growth Mode (GaN/Sapphire); 2.1.2.2 3D Growth Mode (GaN/Sapphire); 2.1.3 Defects in GaN/Sapphire and GaN/6H-SiC; 2.1.3.1 Extended Defects; 2.1.3.2 Native Defects; 2.1.3.3 Defect-Related Optical Properties; 2.1.3.4 Device Performance Limitations; 2.1.3.5 Electronic Properties of Defects; 2.2 Epitaxial Lateral Overgrowth (ELO); 2.2.1 Standard ELO; 2.2.2 Rationale; 2.2.3 Experimental; 2.3 One-Step Lateral Overgrowth (1S-ELO); 2.3.1 ELO in MOVPE; 2.3.1.1 Morphology and Defects 2.3.1.2 Structural Assessment2.3.1.3 Kinetics; 2.3.1.4 In-Depth Optical Assessment of MOVPE ELO GaN; 2.3.2 HVPE; 2.3.2.1 In-Depth Assessment of HVPE ELO GaN; 2.3.2.2 Stripe Openings along ; 2.3.2.3 Selective Area Epitaxy (SAE); 2.3.2.4 (C(2)H(5))(2)GaCl as Ga Source; 2.3.2.5 Stress Generation; 2.3.3 Sublimation; 2.3.4 New Developments; 2.3.4.1 ELO on Si; 2.3.4.2 Using W as Mask; 2.3.4.3 Maskless ELO; 2.3.5 Improvements of the Standard ELO Method; 2.3.6 Pendeo-Epitaxy; 2.3.7 ELO of Cubic GaN; 2.4 Two-Step ELO (2S-ELO); 2.4.1 Experimental (MOVPE); 2.4.2 In-Depth Assessment of 2S-ELO 2.4.2.1 Cathodoluminescence2.4.2.2 Luminescence of GaN by Epitaxial Lateral Overgrowth; 2.4.2.3 Time-resolved Photoluminescence; 2.4.2.4 Deep Level Transient Spectroscopy (DLTS); 2.4.2.5 Strain Distribution; 2.4.3 Assessment of HVPE; 2.4.4 ELO and Yellow Luminescence; 2.4.5 Conclusion; 2.5 New Trends; 2.5.1 3S-ELO; 2.5.2 Further Improvements; 2.6 Theoretical Analysis of ELO; 2.7 Acknowledgments; 2.8 References; 3 Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides; 3.1 Introduction; 3.2 The Nitrogen Plasma Source; 3.2.1 The Different Sources; 3.2.2 The Nitrogen Plasma 3.2.3 Characterization of the HD25 RF Source by Optical Emission Spectroscopy |
| Record Nr. | UNINA-9910876672603321 |
|
Ruterana Pierre
|
||
| Weinheim ; ; [Great Britain], : Wiley-VCH, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||