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Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi
| Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2015 |
| Descrizione fisica | 1 online resource (477 pages) : illustrations |
| Disciplina | 621.31/244 |
| Soggetto topico |
Solar cells - Materials
Semiconductors - Materials Chalcogenides |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-119-05278-5
1-119-05281-5 1-119-05283-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Structural properties -- Thermal properties -- Elastic, mechanical and lattice dynamic properties -- Electronic energy-band structure -- Optical properties -- Carrier transport properties. |
| Record Nr. | UNINA-9910131529903321 |
Adachi Sadao <1950->
|
||
| Chichester, England : , : Wiley, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi
| Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2015 |
| Descrizione fisica | 1 online resource (477 pages) : illustrations |
| Disciplina | 621.31/244 |
| Soggetto topico |
Solar cells - Materials
Semiconductors - Materials Chalcogenides |
| ISBN |
1-119-05278-5
1-119-05281-5 1-119-05283-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Structural properties -- Thermal properties -- Elastic, mechanical and lattice dynamic properties -- Electronic energy-band structure -- Optical properties -- Carrier transport properties. |
| Record Nr. | UNINA-9910830814903321 |
|
Adachi Sadao <1950->
|
||
| Chichester, England : , : Wiley, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The Handbook on optical constants of metals : in tables and figures / / Sadao Adachi
| The Handbook on optical constants of metals : in tables and figures / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Hackensack, NJ, : World Scientific Publishing Co Pte Ltd, 2012 |
| Descrizione fisica | 1 online resource (684 p.) |
| Disciplina | 620.11 |
| Soggetto topico |
Metal coating
Metallizing Polymers - Surfaces |
| ISBN |
1-62198-659-4
981-4405-95-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; 1 Introduction; 1.1 Electron Configuration in Atoms; 1.2 Crystal Structure; 1.2.1 Metal and Semimetal Elements; (a) Metallic bond; (b) Body-centered cubic structure; (c) Face-centered cubic structure; (d) Hexagonal close-packed structure; (e) Unusual crystal structure of metals and semimetals; 1.2.2 Transition-Metal Carbides and Nitrides; 1.2.3 Metallic Silicides; 1.2.4 High-Tc Superconductors; (a) YBa2Cu3O7-; (b) Bi2Sr2CaCu2O8; (c) MgB2; 1.3 Dielectric Function: Tensor Representation; 1.4 Optical Dispersion Relations; 1.5 Optical Sum Rules; 1.5.1 Inertial Sum Rule
1.5.2 dc-Conductivity Sum Rule1.5.3 f-Sum Rule; 1.6 Model Dielectric Function; 1.6.1 Intraband Transitions; (a) Lorentz-Drude model; (b) Optical constants and electrical conductivity; 1.6.2 Interband Transitions; References; 2 Metal and Semimetal Elements; 2.1 Ia Metals; 2.1.1 Lithium (Li); References; 2.1.2 Sodium (Na); References; 2.1.3 Potassium (K); References; 2.1.4 Rubidium (Rb); References; 2.1.5 Cesium (Cs); References; 2.2 Ib Metals; 2.2.1 Copper (Cu); References; 2.2.2 Silver (Ag); References; 2.2.3 Gold (Au); References; 2.3 IIa Metals; 2.3.1 Beryllium (Be); References 2.3.2 Magnesium (Mg)References; 2.3.3 Calcium (Ca); References; 2.3.4 Strontium (Sr); References; 2.3.5 Barium (Ba); References; 2.4 IIb Metals; 2.4.1 Zinc (Zn); References; 2.4.2 Cadmium (Cd); References; 2.4.3 Mercury (Hg); References; 2.5 IIIa Metals; 2.5.1 Scandium (Sc); References; 2.5.2 Yttrium (Y); References; 2.6 IIIb Metals; 2.6.1 Alminium (Al); Reference; 2.6.2 Gallium (Ga); References; 2.6.3 Indium (In); References; 2.6.4 Thallium (Tl); References; 2.7 IVa Metals; 2.7.1 Titanium (Ti); References; 2.7.2 Zirconium (Zr); References; 2.7.3 Hafnium (Hf); References 2.8 IVb Semimetal and Metal2.8.1 Graphite (C); References; 2.8.2 White Tin (b-Sn); References; 2.9 Va Metals; 2.9.1 Vanadium (V); References; 2.9.2 Niobium (Nb); References; 2.9.3 Tantalum (Ta); References; 2.10 Vb Semimetals; 2.10.1 Antimony (Sb); References; 2.10.2 Bismuth (Bi); References; 2.11 VIa Metals; 2.11.1 Chromium (Cr); References; 2.11.2 Molybdenum (Mo); References; 2.11.3 Tungsten (W); References; 2.12 VIIa Metals; 2.12.1 Manganese (Mn); References; 2.12.2 Rhenium (Re); References; 2.13 VIII Metals; 2.13.1 Iron (Fe); References; 2.13.2 Cobalt (Co); References; 2.13.3 Nickel (Ni) References2.13.4 Ruthenium (Ru); References; 2.13.5 Rhodium (Rh); References; 2.13.6 Palladium (Pd); References; 2.13.7 Osmium (Os); References; 2.13.8 Iridium (Ir); References; 2.13.9 Platinum (Pt); References; 2.14 Lanthanoids; 2.14.1 Lanthanum (La); References; 2.14.2 Cerium (Ce); References; 2.14.3 Praseodymium (Pr); References; 2.14.4 Neodymium (Nd); References; 2.14.5 Samarium (Sm); References; 2.14.6 Europium (Eu); References; 2.14.7 Gadolinium (Gd); References; 2.14.8 Terbium (Tb); References; 2.14.9 Dysprosium (Dy); References; 2.14.10 Holmium (Ho); References; 2.14.11 Erbium (Er) References |
| Record Nr. | UNINA-9911006684403321 |
|
Adachi Sadao <1950->
|
||
| Hackensack, NJ, : World Scientific Publishing Co Pte Ltd, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / / Sadao Adachi [[electronic resource]]
| Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / / Sadao Adachi [[electronic resource]] |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | New York, : Wiley, c1992 |
| Descrizione fisica | 1 online resource (xviii, 318 p. ) : ill. ; |
| Disciplina | 537.6/226 |
| Soggetto topico |
Gallium arsenide semiconductors
Indium alloys Indium phosphide Electricity & Magnetism Physics Physical Sciences & Mathematics |
| Soggetto genere / forma | Electronic books |
| ISBN |
1-280-56099-1
9786610560998 3-527-60281-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910146077403321 |
|
Adachi Sadao <1950->
|
||
| New York, : Wiley, c1992 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / / Sadao Adachi [[electronic resource]]
| Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / / Sadao Adachi [[electronic resource]] |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | New York, : Wiley, c1992 |
| Descrizione fisica | 1 online resource (xviii, 318 p. ) : ill. ; |
| Disciplina | 537.6/226 |
| Soggetto topico |
Gallium arsenide semiconductors
Indium alloys Indium phosphide Electricity & Magnetism Physics Physical Sciences & Mathematics |
| ISBN |
1-280-56099-1
9786610560998 3-527-60281-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910830874103321 |
|
Adachi Sadao <1950->
|
||
| New York, : Wiley, c1992 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / / Sadao Adachi [[electronic resource]]
| Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / / Sadao Adachi [[electronic resource]] |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | New York, : Wiley, c1992 |
| Descrizione fisica | 1 online resource (xviii, 318 p. ) : ill. ; |
| Disciplina | 537.6/226 |
| Soggetto topico |
Gallium arsenide semiconductors
Indium alloys Indium phosphide Electricity & Magnetism Physics Physical Sciences & Mathematics |
| ISBN |
1-280-56099-1
9786610560998 3-527-60281-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9911020240503321 |
|
Adachi Sadao <1950->
|
||
| New York, : Wiley, c1992 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi
| Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (407 p.) |
| Disciplina |
621.3815/2
621.38152 |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-26896-4
9786610268962 0-470-09034-0 0-470-09033-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group
1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity 2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness 3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References 5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian 6.2.2 Room-temperature Value |
| Record Nr. | UNINA-9910142692403321 |
|
Adachi Sadao <1950->
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi
| Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (407 p.) |
| Disciplina |
621.3815/2
621.38152 |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis |
| ISBN |
1-280-26896-4
9786610268962 0-470-09034-0 0-470-09033-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group
1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity 2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness 3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References 5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian 6.2.2 Room-temperature Value |
| Record Nr. | UNINA-9910830087103321 |
|
Adachi Sadao <1950->
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Properties of group-IV, III-V and II-VI semiconductors / / Sadao Adachi
| Properties of group-IV, III-V and II-VI semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (407 p.) |
| Disciplina |
621.3815/2
621.38152 |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis |
| ISBN |
9786610268962
9781280268960 1280268964 9780470090343 0470090340 9780470090336 0470090332 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group
1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity 2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness 3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References 5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian 6.2.2 Room-temperature Value |
| Record Nr. | UNINA-9911019423903321 |
|
Adachi Sadao <1950->
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
| Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 |
| Descrizione fisica | 1 online resource (424 p.) |
| Disciplina | 621.3815/2 |
| Collana | Wiley series in materials for electronic & optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis Silicon alloys |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-12352-1
9786612123528 0-470-74438-3 0-470-74439-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS
1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy (c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy (c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy 3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRÜNEISEN PARAMETER 4.3.1 Phonon Deformation Potential |
| Record Nr. | UNINA-9910146134903321 |
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Adachi Sadao <1950->
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| Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 | ||
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| Lo trovi qui: Univ. Federico II | ||
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