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Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
| Conference proceedings. ... International Conference on Indium Phosphide and Related Materials |
| Pubbl/distr/stampa | New York, : Institute of Electrical and Electronic Engineers |
| Disciplina | 621.38152 |
| Soggetto topico |
Indium phosphide
Semiconductors - Materials Optoelectronic devices - Materials Indium compounds Electrooptical devices - Materials |
| Soggetto genere / forma | Conference papers and proceedings. |
| Formato | Materiale a stampa  |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Altri titoli varianti |
IPRM ... conference proceedings
Indium Phosphide and Related Materials Conference International Conference, Indium Phosphide and Related Materials International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week and ... International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (includes ... International Conference on Indium Phosphide & Related Materials (IPRM) & ... International Symposium on Compound Semiconductors (ISCS)) |
| Record Nr. | UNINA-9910626182403321 |
| New York, : Institute of Electrical and Electronic Engineers | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph
| Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2010 |
| Descrizione fisica | 1 online resource (368 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
RudolphPeter, Dozent Dr. sc. nat. |
| Soggetto topico |
Crystal growth
Dielectrics Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
3-527-63289-1
1-283-86975-6 3-527-63288-3 3-527-63287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions
1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions 2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process 4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology 6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment 7.3.1 Pregrowth Processing |
| Record Nr. | UNINA-9910140165703321 |
| Weinheim, : Wiley-VCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph
| Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2010 |
| Descrizione fisica | 1 online resource (368 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
RudolphPeter, Dozent Dr. sc. nat. |
| Soggetto topico |
Crystal growth
Dielectrics Semiconductors - Materials |
| ISBN |
3-527-63289-1
1-283-86975-6 3-527-63288-3 3-527-63287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions
1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions 2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process 4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology 6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment 7.3.1 Pregrowth Processing |
| Record Nr. | UNINA-9910829932703321 |
| Weinheim, : Wiley-VCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Defects in self-catalysed III-V nanowires / / James A. Gott
| Defects in self-catalysed III-V nanowires / / James A. Gott |
| Autore | Gott James A. |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (158 pages) |
| Disciplina | 621.3815 |
| Collana | Springer Theses |
| Soggetto topico |
Nanowires
Semiconductors - Materials Semiconductors - Defects |
| ISBN |
9783030940621
9783030940614 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- Acronyms -- 1 Introduction -- 1.1 Introduction -- 1.2 Nanowires -- 1.2.1 Introduction to Nanowires -- 1.2.2 Nanowire Growth -- 1.2.3 Physical Properties -- 1.2.4 Applications -- 1.3 Defects in the III-V System -- 1.3.1 Defects in Nanowires -- 1.3.2 Mechanisms of Defect Motion -- 1.4 Nanowire Heterostructures -- 1.4.1 Dubrovskii Kinetic Growth Model -- 1.4.2 Priante/Glas Model -- 1.4.3 Muraki Model -- 1.4.4 Empirical Sigmoidal Models -- 1.4.5 Measuring Heterostructure Features Using STEM -- 1.5 Thesis Outline -- References -- 2 Methods -- 2.1 Electron Microscopy -- 2.1.1 Illumination System -- 2.1.2 Aberrations -- 2.1.3 Sample Interaction -- 2.1.4 TEM -- 2.1.5 STEM -- 2.1.6 SEM -- 2.1.7 Microscopes -- 2.2 Sample Preparation -- 2.2.1 Sample Growth -- 2.2.2 Microtome -- 2.2.3 Conventional TEM and STEM Preparation -- 2.2.4 In-Situ Microscopy -- 2.3 Simulations -- 2.4 Measuring Strain Using GPA -- 2.5 Spectroscopy -- 2.5.1 Cathodoluminescence -- 2.5.2 Energy Dispersive X-Ray Spectroscopy -- References -- 3 Defects in Nanowires -- 3.1 Introduction -- 3.2 Types of Defects in GaAs(P) Nanowires -- 3.2.1 Analysing Burgers Vectors -- 3.2.2 Σ3 {112} Defect-The Three Monolayer Defect -- 3.2.3 Defects with Non-Zero Burgers Vector -- 3.3 Defect Origin -- 3.4 Cross-Sections of Defective Nanowires -- 3.5 Effect on Nanowire Properties -- 3.6 Chapter Summary -- References -- 4 Defect Dynamics in Nanowires -- 4.1 Introduction -- 4.2 Forces Behind Defect Motion in Nanowires -- 4.3 Motion of 3 Monolayer Defects -- 4.3.1 Complete Removal of Defect from the Nanowire -- 4.3.2 Movement Stopped by Interactions -- 4.3.3 No Movement: Stable Configurations -- 4.4 Velocity Analysis -- 4.5 Motion of More Complicated Defect Configurations -- 4.6 Chapter Summary -- References.
5 Interfaces in Nanowire Axial Heterostructures -- 5.1 Introduction -- 5.2 GaAsP-GaAs-GaAsP Quantum Dots in Self-Catalysed Nanowires -- 5.2.1 Converting ADF Intensity to Composition -- 5.3 Interface Models -- 5.3.1 Dubrovskii's Kinetic Model -- 5.3.2 Comparing Models -- 5.4 Interface Width -- 5.5 Size of Quantum Dots -- 5.6 Chapter Summary -- References -- 6 Conclusions and Future Work. |
| Record Nr. | UNINA-9910522952103321 |
Gott James A.
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| Cham, Switzerland : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi
| Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2015 |
| Descrizione fisica | 1 online resource (477 pages) : illustrations |
| Disciplina | 621.31/244 |
| Soggetto topico |
Solar cells - Materials
Semiconductors - Materials Chalcogenides |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-119-05278-5
1-119-05281-5 1-119-05283-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Structural properties -- Thermal properties -- Elastic, mechanical and lattice dynamic properties -- Electronic energy-band structure -- Optical properties -- Carrier transport properties. |
| Record Nr. | UNINA-9910131529903321 |
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Adachi Sadao <1950->
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| Chichester, England : , : Wiley, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi
| Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2015 |
| Descrizione fisica | 1 online resource (477 pages) : illustrations |
| Disciplina | 621.31/244 |
| Soggetto topico |
Solar cells - Materials
Semiconductors - Materials Chalcogenides |
| ISBN |
1-119-05278-5
1-119-05281-5 1-119-05283-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Structural properties -- Thermal properties -- Elastic, mechanical and lattice dynamic properties -- Electronic energy-band structure -- Optical properties -- Carrier transport properties. |
| Record Nr. | UNINA-9910830814903321 |
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Adachi Sadao <1950->
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| Chichester, England : , : Wiley, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Electrically conducting polyimide film containing tin complexes [[electronic resource] /] / inventors, Larry T. Taylor, Harold G. Boston
| Electrically conducting polyimide film containing tin complexes [[electronic resource] /] / inventors, Larry T. Taylor, Harold G. Boston |
| Edizione | [[Redacted ed.]] |
| Pubbl/distr/stampa | [Washington, DC] : , : [National Aeronautics and Space Administration], , [1994] |
| Descrizione fisica | 1 online resource : illustrations |
| Altri autori (Persone) |
TaylorLarry T
BostonHarold G |
| Collana | NASA case |
| Soggetto topico |
Conducting polymers
Polyimides Polymeric films Semiconductors (materials) Tin oxides Semiconductors - Materials |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910697270303321 |
| [Washington, DC] : , : [National Aeronautics and Space Administration], , [1994] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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An essential guide to electronic material surfaces and interfaces / / Leonard J. Brillson, Ohio State University
| An essential guide to electronic material surfaces and interfaces / / Leonard J. Brillson, Ohio State University |
| Autore | Brillson L. J. |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : John Wiley & Sons, Incorporated, , 2016 |
| Descrizione fisica | 1 online resource (379 p.) |
| Disciplina | 621.381 |
| Soggetto topico |
Electronics - Materials
Surfaces (Technology) - Analysis Spectrum analysis Semiconductors - Materials |
| ISBN |
1-119-02713-6
1-78785-141-9 1-119-02714-4 1-119-02712-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Why surfaces and interfaces of electronic materials -- Semiconductor electronic and optical properties -- Electrical measurements of surfaces and interfaces -- Localized states at surfaces and interfaces -- Ultrahigh vacuum technology -- Surface and interface analysis -- Surface and interface spectroscopies -- Dynamical depth-dependent analysis and imaging -- Electron beam diffraction and microscopy of atomic-scale geometrical structure -- Scanning probe techniques -- Optical spectroscopies -- Electronic material surfaces -- Surface electronic applications -- Semiconductor heterojunctions -- Metal-semiconductor interfaces -- Next generation surfaces and interfaces. |
| Record Nr. | UNINA-9910136943803321 |
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Brillson L. J.
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| Hoboken, New Jersey : , : John Wiley & Sons, Incorporated, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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An essential guide to electronic material surfaces and interfaces / / Leonard J. Brillson, Ohio State University
| An essential guide to electronic material surfaces and interfaces / / Leonard J. Brillson, Ohio State University |
| Autore | Brillson L. J. |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : John Wiley & Sons, Incorporated, , 2016 |
| Descrizione fisica | 1 online resource (379 p.) |
| Disciplina | 621.381 |
| Soggetto topico |
Electronics - Materials
Surfaces (Technology) - Analysis Spectrum analysis Semiconductors - Materials |
| ISBN |
1-119-02713-6
1-78785-141-9 1-119-02714-4 1-119-02712-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Why surfaces and interfaces of electronic materials -- Semiconductor electronic and optical properties -- Electrical measurements of surfaces and interfaces -- Localized states at surfaces and interfaces -- Ultrahigh vacuum technology -- Surface and interface analysis -- Surface and interface spectroscopies -- Dynamical depth-dependent analysis and imaging -- Electron beam diffraction and microscopy of atomic-scale geometrical structure -- Scanning probe techniques -- Optical spectroscopies -- Electronic material surfaces -- Surface electronic applications -- Semiconductor heterojunctions -- Metal-semiconductor interfaces -- Next generation surfaces and interfaces. |
| Record Nr. | UNINA-9910818236403321 |
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Brillson L. J.
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| Hoboken, New Jersey : , : John Wiley & Sons, Incorporated, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Functionalization of semiconductor surfaces [[electronic resource] /] / edited by Franklin (Feng) Tao, Steven L. Bernasek
| Functionalization of semiconductor surfaces [[electronic resource] /] / edited by Franklin (Feng) Tao, Steven L. Bernasek |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2012 |
| Descrizione fisica | 1 online resource (456 p.) |
| Disciplina | 541/.377 |
| Altri autori (Persone) |
TaoFeng <1971->
BernasekS. L (Steven L.) |
| Soggetto topico |
Semiconductors - Surfaces
Semiconductors - Materials |
| ISBN |
1-280-58968-X
9786613619518 1-118-19980-4 1-118-19977-4 1-118-19978-2 |
| Classificazione | TEC021000 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction / Franklin (Feng) Tao, Yuan Zhu, and Steven L. Bernasek -- Surface analytical techniques / Ying Wei Cai and Steven L. Bernasek -- Structures of semiconductor surfaces and origins of surface reactivity with organic molecules / Yongquan Qu and Keli Han -- Pericyclic reactions of organic molecules at semiconductor surfaces -- Keith T. Wong and Stacey F. Bent -- Chemical binding of five-membered and six-membered aromatic molecules / Franklin F. Tao and Steven L. Bernasek -- Influence of functional groups in substituted aromatic molecules on the selection of reaction channel in semiconductor surface functionalization / Andrew V. Teplyakov -- Covalent binding of polycyclic aromatic hydrocarbon systems / Dr. Yong Kian Soon and Professor Xu Guo-Qin -- / Young Hwan Min, Hangil lee, Do Hwan Kim, and Sehun Kim -- Ab initio molecular dynamics studies of conjugated dienes on semiconductor surfaces / Mark E. Tuckerman and Yanli Zhang -- Formation of organic nanostructures on semiconductor surfaces / Zakir Hossain and Maki Kawai -- Formation of organic monolayers through wet chemistry / Damien Aureau and Yves J. Chabal -- Chemical stability of organic monolayers formed in solution / Leslie E. O'Leary, Erik Johansson, and Nathan S. Lewis -- Immobilization of biomolecules at semiconductor interfaces / Robert J. Hamers -- Perspective and challenge / Franklin (Feng) Tao and Steven L. Bernasek. |
| Record Nr. | UNINA-9910141330603321 |
| Hoboken, N.J., : Wiley, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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