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2004 ROCS Workshop : proceedings : October 24, 2004, Monterey, California
| 2004 ROCS Workshop : proceedings : October 24, 2004, Monterey, California |
| Pubbl/distr/stampa | [Place of publication not identified], : JEDEC, 2004 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Gallium arsenide semiconductors - Reliability
Semiconductors - Materials Semiconductors Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996206260603316 |
| [Place of publication not identified], : JEDEC, 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
2004 ROCS Workshop : proceedings : October 24, 2004, Monterey, California
| 2004 ROCS Workshop : proceedings : October 24, 2004, Monterey, California |
| Pubbl/distr/stampa | [Place of publication not identified], : JEDEC, 2004 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Gallium arsenide semiconductors - Reliability
Semiconductors - Materials Semiconductors Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872450803321 |
| [Place of publication not identified], : JEDEC, 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
2005 ROCS Workshop : proceedings : October 30, 2005, Palm Springs, California
| 2005 ROCS Workshop : proceedings : October 30, 2005, Palm Springs, California |
| Pubbl/distr/stampa | [Place of publication not identified], : JEDEC, 2005 |
| Soggetto topico |
Gallium arsenide semiconductors - Reliability
Semiconductors - Materials Semiconductors Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996199542303316 |
| [Place of publication not identified], : JEDEC, 2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
2005 ROCS Workshop : proceedings : October 30, 2005, Palm Springs, California
| 2005 ROCS Workshop : proceedings : October 30, 2005, Palm Springs, California |
| Pubbl/distr/stampa | [Place of publication not identified], : JEDEC, 2005 |
| Soggetto topico |
Gallium arsenide semiconductors - Reliability
Semiconductors - Materials Semiconductors Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872551303321 |
| [Place of publication not identified], : JEDEC, 2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
2006 ROCS Workshop : proceedings : November 12, 2006, San Antonio Texas
| 2006 ROCS Workshop : proceedings : November 12, 2006, San Antonio Texas |
| Pubbl/distr/stampa | [Place of publication not identified], : JEDEC, 2006 |
| Soggetto topico |
Gallium arsenide semiconductors - Reliability
Semiconductors - Materials Semiconductors Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996216756303316 |
| [Place of publication not identified], : JEDEC, 2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
2006 ROCS Workshop : proceedings : November 12, 2006, San Antonio Texas
| 2006 ROCS Workshop : proceedings : November 12, 2006, San Antonio Texas |
| Pubbl/distr/stampa | [Place of publication not identified], : JEDEC, 2006 |
| Soggetto topico |
Gallium arsenide semiconductors - Reliability
Semiconductors - Materials Semiconductors Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872543003321 |
| [Place of publication not identified], : JEDEC, 2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] : 12 October 2008
| 2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] : 12 October 2008 |
| Pubbl/distr/stampa | New York : , : IEEE, , 2010 |
| Descrizione fisica | 1 online resource (196 pages) |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Reliability Gallium arsenide semiconductors - Reliability |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996207153203316 |
| New York : , : IEEE, , 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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2016 13th China International Forum on Solid State Lighting : International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) / / Institute of Electrical and Electronics Engineers (IEEE)
| 2016 13th China International Forum on Solid State Lighting : International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) / / Institute of Electrical and Electronics Engineers (IEEE) |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2016 |
| Descrizione fisica | 1 online resource (various pagings) : illustrations some color |
| Disciplina | 621.38152 |
| Soggetto topico |
Wide gap semiconductors
Semiconductors - Materials |
| ISBN | 1-5090-4613-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2016 13th China International Forum on Solid State Lighting |
| Record Nr. | UNINA-9910172653703321 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
2016 13th China International Forum on Solid State Lighting : International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) / / Institute of Electrical and Electronics Engineers (IEEE)
| 2016 13th China International Forum on Solid State Lighting : International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) / / Institute of Electrical and Electronics Engineers (IEEE) |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2016 |
| Descrizione fisica | 1 online resource (various pagings) : illustrations some color |
| Disciplina | 621.38152 |
| Soggetto topico |
Wide gap semiconductors
Semiconductors - Materials |
| ISBN | 1-5090-4613-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2016 13th China International Forum on Solid State Lighting |
| Record Nr. | UNISA-996279840103316 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Advanced semiconductor heterostructures [[electronic resource] ] : novel devices, potential device applications and basic properties / / editors, Mitra Dutta, Michael A. Stroscio
| Advanced semiconductor heterostructures [[electronic resource] ] : novel devices, potential device applications and basic properties / / editors, Mitra Dutta, Michael A. Stroscio |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
| Descrizione fisica | 1 online resource (244 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
DuttaMitra
StroscioMichael A. <1949-> |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Heterostructures
Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-92823-2
9786611928230 981-277-554-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; PREFACE; ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES; 1. Introduction; 2. Dielectric Continuum Model for Polar Excitations in Layered Heterostructures; 2.1. LO-phonon confinement in layered heterostructures; 2.2. Examples of scattering rate tailoring; 3. Multiband Description of Electron Confinement; 3.1. Analytical representation for the eigenstates; 3.2. Phenomenological boundary conditions; 3.3. Electron energy spectrum of basic heterostructures; 4. Subband Depopulation in Type-II Laser Heterostructures
4.1. Interband tunneling in InAs/GaSb ""leaky"" heterostructure4.2. Phonon enhancement of the depopulation process; 5. Conclusions; Acknowledgments; References; QUANTUM DOT INFRARED DETECTORS AND SOURCES; 1. Introduction; 2. Historical Background; 3. Self-Organized Quantum Dots for Devices; 4. Electronic Spectra and Carrier Dynamics in Self-Organized Quantum Dots; 5. Quantum Dot Infrared Detectors and Focal Plane Arrays; 6. Quantum Dot Infrared Sources; 7. Future Prospects; Acknowledgments; References; Generation of Terahertz Emission Based on Intersubband Transitions; 1. Introduction 2. Electrically pumped intersubband THz emitters2.1 THz emitters using electron-LO-phonon scattering for depopulation; 2.2. Role of interface and confined phonon modes; 2.3. Intrawell THz emitters using resonant tunneling for depopulation; 2.4 Transport issues of electrically pumped THz intersubband emitters; 3. Optically pumped intersubband THz emitters; 3.1 Intersubband pumped THz optical parametric oscillators (OPOs); 3.2 Intersubband optically pumped THz lasers; 3.3 Interband optically pumped THz emitters; Acknowledgments; References MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES1. Introduction; 2. Progress in the Design of Type-I GaSb-based Diode Lasers; 3. High-power Room-temperature CW Diode Lasers Operating in the Wavelength Range of 2.3 - 2.6-μm; 4. Conclusion; Acknowledgement; References; ADVANCES IN QUANTUM-DOT RESEARCH AND TECHNOLOGY: THE PATH TO APPLICATION IN BIOLOGY; 1. Introduction; 2. Recent Developments in the Application of Quantum Dots to Biology; 3. Recent Developments in GaAs-Based Quantum Dots; 4. Recent Developments in InAs-Based Quantum Dots 5. Recent Developments in GaSb-, GaN-, PbS-, CdTe-, InP-, and PbSe-Based Quantum Dots6. Recent Developments in CdSe-Based Quantum Dots; 7. Implementing Quantum Dot Technology in Biological Applications; Acknowledgments; References; HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES; 1. Introduction; 2. The Basic Equations; 2.1. The Boltzmann equation; 2.2. New variables; 2.3. Boundary conditions; 3. Solutions of the Kinetic Equation; 3.1. General structure of solutions; 3.2. Relationships between f+, f- and F+, F-; 3.3. The zero energy stair s = 0 3.4- The first stair s = 1 |
| Record Nr. | UNINA-9910454090603321 |
| Singapore ; ; River Edge, N.J., : World Scientific, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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